公开(公告)号：US09568907B2

公开(公告)日：2017-02-14

申请号：US14845197

申请日：2015-09-03

Applicant: IMS Nanofabrication AG

Inventor： Elmar Platzgummer ,  Christoph Spengler ,  Markus Wagner ,  Samuel Kvasnica

IPC: G21K5/04 ,  G05B19/402 ,  H01J37/304 ,  H01J37/317

CPC classification number: G05B19/402 ,  H01J37/3045 ,  H01J37/3177 ,  H01J2237/31764

Abstract: Method for computing an exposure pattern for exposing a desired pattern on a target in a charged-particle lithography apparatus, in which a particle beam is directed to and illuminates a pattern definition device comprising an aperture array composed of a plurality of blanking apertures through which said particle beam penetrates for writing said desired pattern by exposing a multitude of pixels within an exposure area on the target, said method taking into account a spatially dependent distortion of the target within the exposure area, with respect to dislocations transversal to the direction of the particle beam.

Abstract translation: 一种用于计算曝光图案的方法，用于在带电粒子光刻设备中的目标上曝光所需图案，其中，粒子束被引导并照射包括由多个消隐孔组成的孔径阵列的图案定义装置， 通过在目标的曝光区域内暴露许多像素，粒子束穿透以写入所需的图案，所述方法考虑到在曝光区域内的目标的空间依赖的变形，相对于沿粒子方向横向的位错 光束。

公开(公告)号：US20160071684A1

公开(公告)日：2016-03-10

申请号：US14845197

申请日：2015-09-03

Applicant: IMS Nanofabrication AG

Inventor： Elmar Platzgummer ,  Christoph Spengler ,  Markus Wagner ,  Samuel Kvasnica

IPC: H01J37/153 ,  G05B19/402 ,  H01J37/317

CPC classification number: G05B19/402 ,  H01J37/3045 ,  H01J37/3177 ,  H01J2237/31764

Abstract: Method for computing an exposure pattern for exposing a desired pattern on a target in a charged-particle lithography apparatus, in which a particle beam is directed to and illuminates a pattern definition device comprising an aperture array composed of a plurality of blanking apertures through which said particle beam penetrates for writing said desired pattern by exposing a multitude of pixels within an exposure area on the target, said method taking into account a spatially dependent distortion of the target within the exposure area, with respect to dislocations transversal to the direction of the particle beam.

Abstract translation: 一种用于计算曝光图案的方法，用于在带电粒子光刻设备中的目标上曝光所需图案，其中，粒子束被引导并照射包括由多个消隐孔组成的孔径阵列的图案定义装置， 通过在目标的曝光区域内暴露许多像素，粒子束穿透以写入所需的图案，所述方法考虑到在曝光区域内的目标的空间依赖的变形，相对于沿粒子方向横向的位错 光束。