DEVICES WITH FIELD EFFECT TRANSISTORS
    22.
    发明公开

    公开(公告)号:US20230184711A1

    公开(公告)日:2023-06-15

    申请号:US18003493

    申请日:2021-06-18

    申请人: Illumina, Inc.

    IPC分类号: G01N27/414

    CPC分类号: G01N27/4146

    摘要: Devices and methods of using the devices are disclosed which can provide scalability, improved sensitivity and reduced noise for sequencing polynucleotide. Examples of the devices include a biological or solid-state nanopore, a field effect transistor (FET) sensor with improved gate controllability over the channel, and a porous structure.

    Field effect sensors
    27.
    发明授权

    公开(公告)号:US10551342B2

    公开(公告)日:2020-02-04

    申请号:US16024299

    申请日:2018-06-29

    申请人: ILLUMINA, INC.

    发明人: Boyan Boyanov

    摘要: Apparatus and methods are disclosed for single molecule field effect sensors having conductive channels functionalized with a single active moiety. A region of a nanostructure (e.g., such as a silicon nanowire or a carbon nanotube) provide the conductive channel. Trapped state density of the nanostructure is modified for a portion of the nanostructure in proximity with a location where the active moiety is linked to the nanostructure. In one example, the semiconductor device includes a source, a drain, a channel including a nanostructure having a modified portion with an increased trap state density, the modified portion being further functionalized with an active moiety. A gate terminal is in electrical communication with the nanostructure. As a varying electrical signal is applied to an ionic solution in contact with the nanostructure channel, changes in current observed from the semiconductor device can be used to identify composition of the analyte.

    DEVICE FOR SEQUENCING
    30.
    发明申请

    公开(公告)号:US20220299469A1

    公开(公告)日:2022-09-22

    申请号:US17828991

    申请日:2022-05-31

    申请人: Illumina, Inc.

    摘要: Example devices include a cis well associated with a cis electrode, a trans well associated with a trans electrode, and a field effect transistor (FET) positioned between the cis well and the trans well. Examples of the field effect transistor (FET) include a fluidic system defined therein. The fluidic system includes a first cavity facing the cis well, a second cavity fluidically connected to the trans well, and a through via extending through the field effect transistor from the first cavity. A first nanoscale opening fluidically connects the cis well and the first cavity, the first nanoscale opening having an inner diameter. A second nanoscale opening fluidically connects the through via and the second cavity, the second nanoscale opening having an inner diameter. The second nanoscale opening inner diameter is larger than the first nanoscale opening inner diameter.