Compensation of magnetic fields
    22.
    发明授权
    Compensation of magnetic fields 有权
    磁场补偿

    公开(公告)号:US07436120B2

    公开(公告)日:2008-10-14

    申请号:US11070439

    申请日:2005-03-02

    CPC classification number: G05F7/00

    Abstract: For compensation of a magnetic field in an operating region a number of magnetic field sensors (S1, S2) and an arrangement of compensation coils (Hh) surrounding said operating region is used. The magnetic field is measured by at least two sensors (S1, S2) located at different positions outside the operating region, preferably at opposing positions with respect to a symmetry axis of the operating region, generating respective sensor signals (s1, s2), the sensor signals of said sensors are superposed to a feedback signal (ms, fs), which is converted by a controlling means to a driving signal (d1), and the driving signal is used to steer at least one compensation coil (Hh). To further enhance the compensation, the driving signal is also used to derive an additional input signal (cs) for the superposing step to generate the feedback signal (fs).

    Abstract translation: 为了补偿工作区域中的磁场,使用多个磁场传感器(S1,S2)和围绕所述操作区域的补偿线圈(Hh)的布置。 磁场由位于工作区域外部的不同位置的至少两个传感器(S1,S2)测量,优选地在相对于操作区域的对称轴线的相对位置处产生相应的传感器信号(s 1,s 2) 2),所述传感器的传感器信号被叠加到由控制装置转换为驱动信号(d 1)的反馈信号(ms,fs),并且驱动信号用于转向至少一个补偿线圈 (Hh)。 为了进一步增强补偿,驱动信号还用于导出叠加步骤的附加输入信号(cs)以产生反馈信号(fs)。

    Particle-optic electrostatic lens
    23.
    发明申请
    Particle-optic electrostatic lens 有权
    粒子静电透镜

    公开(公告)号:US20050072933A1

    公开(公告)日:2005-04-07

    申请号:US10951087

    申请日:2004-09-27

    Abstract: In a charged-particle beam exposure device, an electrostatic lens (ML) comprises several (at least three) electrodes with rotational symmetry (EFR, EM, EFN) surrounding a particle beam path; the electrodes are arranged coaxially on a common optical axis representing the center of said particle beam path and are fed different electrostatic potentials through electric supplies. At least a subset of the electrodes (EM) form an electrode column realized as a series of electrodes of substantially equal shape arranged in consecutive order along the optical axis, wherein outer portions of said electrodes (EM) of the electrode column have outer portions (OR) of corresponding opposing surfaces (f1, f2) facing toward the next and previous electrodes, respectively. Preferably, the length of the electrode column is at least 4.1 times (3 times) the inner radius (ri1) of said surfaces (f1, f2).

    Abstract translation: 在带电粒子束曝光装置中,静电透镜(ML)包括围绕粒子束路径的旋转对称(EFR,EM,EFN)的几个(至少三个)电极; 电极同轴地布置在表示所述粒子束路径的中心的公共光轴上,并且通过电源馈送不同的静电电位。 电极(EM)的至少一个子集形成电极柱,其实现为沿着光轴以连续顺序布置的基本相等形状的一系列电极,其中电极柱的所述电极(EM)的外部部分具有外部部分 OR)分别面向下一个和前一个电极的对应的相对表面(f1,f2)。 优选地,电极柱的长度为所述表面(f1,f2)的内半径(ri1)的至少4.1倍(3倍)。

    Ion beam lithography
    24.
    发明授权
    Ion beam lithography 失效
    离子束光刻

    公开(公告)号:US4985634A

    公开(公告)日:1991-01-15

    申请号:US226275

    申请日:1988-07-29

    Abstract: Apparatus and method for projection ion beam lithography are described which allow formation of low distortion, large field, reduced images of a mask pattern at a wafer plane using an optical column of practical size. The column shown is comprised of an accelerating Einzel lens followed by a gap lens, with numerous cooperating features. By coordinated selection of the parameters of the optical column, lens distortion and chromatic blurring are simultaneously minimized. Real time measurement of the position of the image field with respect to the existing pattern on the wafer is employed before and during the time of exposure of the new field and means are provided to match the new field to the existing pattern even when the latter has been distorted by processing. A metrology system enables convenient calibration and adjustment of the apparatus.

    Abstract translation: 描述了用于投影离子束光刻的装置和方法,其允许使用实际尺寸的光学柱在晶片平面处形成掩模图案的低失真,大场,缩小图像。 所示的列包括加速的Einzel透镜,随后是间隙透镜,具有许多合作特征。 通过协调选择光学柱的参数,同时最小化透镜失真和色彩模糊。 在新场景的曝光之前和期间都采用相对于晶片上的现有图案的图像场的位置的实时测量,并且提供了将新场与现有图案相匹配的装置,即使后者具有 被处理扭曲了。 计量系统使仪器方便校准和调整。

    Apparatus for demagnification or full-size ion projection lithography
    25.
    发明授权
    Apparatus for demagnification or full-size ion projection lithography 失效
    用于缩小或全尺寸离子投影光刻的设备

    公开(公告)号:US4894549A

    公开(公告)日:1990-01-16

    申请号:US164106

    申请日:1988-03-04

    Applicant: Gerhard Stengl

    Inventor: Gerhard Stengl

    CPC classification number: H01J37/3007

    Abstract: An ion projection lithography system provides an immersion lens between the mask and the substrate, a mask between the immersion lens and the ion source and ExB fiter between the mask and the source but cooperating with a diaphragm located close to the crossing point or focal point of the immersion lens so that ions of undesired mass are rejected from the beam by impingement upon the diaphragm while utilizing low magnetic and electrical field strengths of the ExB filter.

    Abstract translation: 离子投影光刻系统在掩模和基板之间提供浸没透镜,浸没透镜和离子源之间的掩模和掩模和源之间的ExB薄膜,但是与位于接近透光点和焦点的交叉点或焦点 浸没透镜,使得不需要的质量的离子通过冲击到隔膜而从光束中被排斥,同时利用ExB滤光器的低磁场强度和电场强度。

    Particle or radiation beam mask and process for making same
    26.
    发明授权
    Particle or radiation beam mask and process for making same 失效
    粒子或辐射束掩模及其制造方法

    公开(公告)号:US4891547A

    公开(公告)日:1990-01-02

    申请号:US205535

    申请日:1988-06-10

    CPC classification number: G03F1/20 G03F1/22

    Abstract: The mask of our invention can be used in image forming units, for example in ion projection microlithography. The mask comprises a mask foil clamped into a retaining frame. The mask foil has a larger thermal expansion coefficient than the retaining frame. To make this mask the mask foil and retaining frame are heatead to a higher temperature than room temperature and clamped in position at this temperature.

    Abstract translation: 本发明的掩模可用于图像形成单元,例如在离子投影微光刻中。 掩模包括夹在保持框架中的掩模箔。 掩模箔具有比保持框架更大的热膨胀系数。 为了使这个掩模,掩模箔和固定框架在比室温高的温度下被捕获并在该温度下被夹紧就位。

    Method of stabilizing a mask
    27.
    发明授权
    Method of stabilizing a mask 失效
    稳定面膜的方法

    公开(公告)号:US4775797A

    公开(公告)日:1988-10-04

    申请号:US930805

    申请日:1986-11-13

    Abstract: Our invention is a process for stabilizing a projection mask which is put in operation at an elevated temperature. The frame containing the mask foil is heated to a temperature which is higher than the temperature of the mask foil. The mask foil is thus kept under tension by controlling the temperature of the frame it is held in and distortions like the distortions which would otherwise occur in long time operation and as conditioned by the mask foil hanging through it are avoided. The effect of the expansion of the mask foil can be compensated in the image forming unit by correction of the image formation scale.

    Abstract translation: 我们的发明是一种在升高的温度下投入使用的投影掩模的稳定化方法。 将包含掩模箔的框架加热到高于掩模箔的温度的温度。 因此,掩模箔通过控制其保持的框架的温度而保持在张力下,并且避免了像在长时间操作中会发生的失真以及通过悬挂在其上的掩模箔调节的扭曲。 可以通过图像形成标度的校正在图像形成单元中补偿掩模箔的膨胀效果。

    Pattern lock system
    28.
    发明授权

    公开(公告)号:US06661015B2

    公开(公告)日:2003-12-09

    申请号:US09950140

    申请日:2001-09-10

    CPC classification number: H01J37/3045 H01J2237/31755

    Abstract: In a particle projection lithography system, an alignment system is used to determine alignment parameters to measure the position and shape of an optical image of a pattern of structures formed in a mask and imaged onto a target by means of a broad particle beam, by means of an apparatus with a plurality of alignment marks adapted to produce secondary radiation upon irradiation with radiation of said particle beam. In order to allow for a variation of the alignment parameters along the optical axis, the alignment marks are positioned outside the aperture of the alignment system for the part of the beam that generates said optical image, arranged at positions to coincide with particle reference beams projected through reference beam forming structures provided on the mask while said optical image is projected onto the target, and situated on at least two different levels over the target as seen along the directions of the respective reference beams.

    Field composable electrostatic lens system
    29.
    发明授权
    Field composable electrostatic lens system 失效
    现场可组合静电透镜系统

    公开(公告)号:US5869838A

    公开(公告)日:1999-02-09

    申请号:US712417

    申请日:1996-09-11

    Applicant: Gerhard Stengl

    Inventor: Gerhard Stengl

    CPC classification number: H01J37/12 H01J2237/3175

    Abstract: An electrostatic lens system consisting of several electrodes and a novel method of making same. The invention relates to a lithography apparatus that includes a field composable lens where at least one lens electrode has a novel structure, said structure comprising an outer support structure, an insulating intermediate part and a conductive inner part composed of a number of segment-like subelectrodes that can be individually powered, if necessary, slightly differently to produce desired individual electrostatic subfields to be superimposed to the lens field. With the field composable lens design, it has been successfully demonstrated that a number of shape and alignment errors of lens components can be corrected by supplying slightly different voltages to individual subelectrodes, thus optimizing the overall lens performance (in view of its optical properties). The lens components may be manufactured on less expensive and readily available conventional precision machinery rather than expensive and rarely available high precision equipment.

    Abstract translation: 由多个电极构成的静电透镜系统及其制造方法。 本发明涉及一种光刻设备,其包括场可组合透镜,其中至少一个透镜电极具有新颖的结构,所述结构包括外支撑结构,绝缘中间部分和由许多片状子电极组成的导电内部部分 如果需要,可以单独地供电,稍微不同以产生要叠加到透镜场的期望的各个静电子场。 通过现场可组合的透镜设计,已经成功地证明了可以通过向各个子电极提供稍微不同的电压来校正透镜部件的多个形状和对准误差,从而优化整体透镜性能(鉴于其光学性质)。 透镜部件可以以不那么昂贵且易于获得的常规精密机械制造,而不是昂贵且很少可用的高精度设备。

    Pattern Lock System for Particle-Beam Exposure Apparatus
    30.
    发明申请
    Pattern Lock System for Particle-Beam Exposure Apparatus 有权
    用于粒子束曝光装置的图案锁定系统

    公开(公告)号:US20090146082A1

    公开(公告)日:2009-06-11

    申请号:US11719320

    申请日:2005-11-15

    CPC classification number: B82Y10/00 B82Y40/00 H01J37/3045 H01J37/3177

    Abstract: In a pattern-lock system of particle-beam apparatus wherein the imaging of the pattern is done by means of at least two consecutive projector stages of the projecting system, reference marks are imaged upon registering means to determine the position of the particle-beam, at the location of an intermediary image of the reference marks produced by a non-final projector stage, with the registering means being positioned at locations of nominal positions of an intermediary imaging plane. Furthermore, to produce a scanning movement over the registering means the reference beamlets are shifted laterally by means of deflector means provided in the pattern defining means in dependence of a time-dependent electric voltage.

    Abstract translation: 在粒子束装置的图案锁定系统中,其中通过投影系统的至少两个连续的投影台进行图案的成像,参考标记在登记装置上成像以确定粒子束的位置, 在由非最终投影仪舞台产生的参考标记的中间图像的位置处,其中登记装置位于中间成像平面的标称位置的位置。 此外,为了在登记装置上产生扫描运动,根据时间相关的电压,通过设置在图案定义装置中的偏转装置横向移动参考子束。

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