公开(公告)号：US09725616B2

公开(公告)日：2017-08-08

申请号：US14235312

申请日：2013-08-05

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Lu Liu ,  Jianshe Xue ,  Shi Shu

IPC: C08F2/46 ,  C08F2/50 ,  C08G61/04 ,  C09D163/10 ,  C08G59/17 ,  C08K3/30 ,  C08K3/34 ,  C08K3/36 ,  C09D163/00 ,  C08G59/16 ,  C08G59/14 ,  C08G59/30

CPC classification number: C09D163/10 ,  C08G59/1461 ,  C08G59/1466 ,  C08G59/1494 ,  C08G59/308 ,  C08K3/30 ,  C08K3/34 ,  C08K3/36 ,  C08K2003/3045 ,  C09D163/00

Abstract: The present invention discloses a fluorine-modified epoxy acrylic resin, an UV-curable varnish and a method for preparing the same, and a method for coating the varnish on a substrate. The fluorine-modified epoxy acrylic resin is prepared by a process including the following steps: generating an epoxy acrylic resin via a ring-opening esterification reaction between an unsaturated mono-carboxylic acid and at least one epoxy group in an epoxy resin; and generating an epoxy acrylic resin containing fluorinated side groups via an esterification reaction between a fluorocarboxylic acid or a fluorocarboxylic acid anhydride and at least one hydroxy group in the epoxy acrylic resin. The UV-curable varnish according to the invention is prepared based on the fluorine-modified epoxy acrylic resin. When the varnish is applied to the surface of a substrate, at least one performance of the material, thereby the service life of the material itself may be improved.

公开(公告)号：US09647013B2

公开(公告)日：2017-05-09

申请号：US13704156

申请日：2012-11-14

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Xiang Liu ,  Jianshe Xue

IPC: H01L29/786 ,  H01L27/12

CPC classification number: H01L27/1288 ,  H01L27/1225 ,  H01L29/7869

Abstract: Embodiments of the invention provide a manufacturing method of a TFT array substrate. The TFT array substrate is formed to comprise a plurality of scanning lines, a plurality of data lines and a plurality of pixel units defined by intersecting these scanning lines and these data lines with each other. Each of the pixel units comprises a TFT and a pixel electrode. The TFT is formed to comprise a gate electrode, a gate insulating layer, a metal oxide semiconductor layer used as an active layer, an etch stopping layer formed on a portion of the surface of the metal oxide semiconductor layer, a source electrode and a drain electrode. In this method, the metal oxide semiconductor layer, the source electrode and the drain electrode are formed by a same patterning process.

公开(公告)号：US09493671B2

公开(公告)日：2016-11-15

申请号：US14348655

申请日：2013-08-15

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Lu Liu ,  Jianshe Xue ,  Guanbao Hui

IPC: C09D133/14 ,  C09D4/06 ,  C09D7/12 ,  C09D163/10 ,  C09D175/14 ,  C08L75/04 ,  C08F220/22 ,  C08F230/08

CPC classification number: C09D133/14 ,  C08F220/22 ,  C08F230/08 ,  C08L75/04 ,  C09D4/06 ,  C09D7/40 ,  C09D163/10 ,  C09D175/14

Abstract: A UV cured varnish, and a process for preparing the same, said UV cured varnish including an epoxy acrylic resin, a polyurethane acrylic resin, a polymerizable monomer, a filler, a photoinitiator, and an adjuvant, wherein the polymerizable monomer comprises a fluorine containing polymerizable monomer and a silicon containing polymerizable monomer. The UV cured varnish can significantly improve the film forming performance. The formed film has a significantly improved performance including hardness, perspiration resistance. The UV cured varnish thus obtained is especially suitable for touch screen and can greatly extend the life of the touch screen.

Abstract translation: UV固化清漆及其制备方法，所述UV固化清漆包括环氧丙烯酸树脂，聚氨酯丙烯酸树脂，可聚合单体，填料，光引发剂和助剂，其中所述可聚合单体包含含氟 可聚合单体和含硅聚合单体。 紫外线固化清漆可显着提高成膜性能。 所形成的膜具有显着改善的性能，包括硬度，耐汗性。 这样获得的UV固化清漆特别适用于触摸屏，可以大大延长触摸屏的使用寿命。

公开(公告)号：US20160254296A1

公开(公告)日：2016-09-01

申请号：US14241345

申请日：2013-11-08

Applicant: BOE Technology Group Co., Ltd.

Inventor： Xiang Liu ,  Gang Wang ,  Jianshe Xue

IPC: H01L27/12 ,  H01L29/49 ,  H01L29/45 ,  G02F1/1362 ,  H01L29/423 ,  H01L29/786 ,  G02F1/1343 ,  H01L21/027 ,  H01L21/4763

CPC classification number: H01L27/1288 ,  G02F1/13439 ,  G02F1/136286 ,  G02F2001/136295 ,  H01L21/0274 ,  H01L21/47635 ,  H01L27/1225 ,  H01L27/124 ,  H01L29/42356 ,  H01L29/42384 ,  H01L29/45 ,  H01L29/4908 ,  H01L29/495 ,  H01L29/66765 ,  H01L29/7869

Abstract: The present invention provides a method for manufacturing an array substrate comprising: sequentially forming an adhesion enhancement layer, a copper-bearing metal layer and a photoresist layer on a substrate, and respectively forming a reserved region and a removal region by performing exposure and development on the photoresist layer using a mask plate, simultaneously processing the adhesion enhancement layer, the copper-bearing metal layer and the photoresist layer in the removal region by a single wet etching process, to form an adhesion enhancement intermediate layer corresponding to the adhesion enhancement layer, a copper-bearing metal intermediate layer corresponding to the copper-bearing metal layer and the photoresist layer thereon in the reserved region; simultaneously processing the adhesion enhancement intermediate layer, the copper-bearing metal intermediate layer and the photoresist layer by a dry etching process, then stripping off the photoresist layer, to form a patterned adhesion enhancement layer and a patterned copper-bearing metal layer respectively.

Abstract translation: 本发明提供一种阵列基板的制造方法，包括：在基板上依次形成粘合增强层，含铜金属层和光致抗蚀剂层，分别通过曝光和显影来形成保留区域和去除区域 使用掩模板的光致抗蚀剂层，通过单次湿法蚀刻工艺同时处理去除区域中的粘附增强层，含铜金属层和光致抗蚀剂层，以形成对应于粘合增强层的粘附增强中间层， 对应于所述保留区域中的含铜金属层和其上的光致抗蚀剂层的含铜金属中间层; 通过干法蚀刻工艺同时处理粘合增强中间层，含铜金属中间层和光致抗蚀剂层，然后剥离光致抗蚀剂层，分别形成图案化的附着增强层和图案化的含铜金属层。

公开(公告)号：US09305942B2

公开(公告)日：2016-04-05

申请号：US13703499

申请日：2012-09-21

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Xiang Liu ,  Jianshe Xue

IPC: G02F1/1362 ,  H01L27/112 ,  H01L29/417 ,  H01L21/02 ,  H01L29/66 ,  H01L27/12 ,  H01L21/04 ,  H01L21/48 ,  H01L27/115 ,  H01L29/45 ,  H01L21/44 ,  H01L27/15

CPC classification number: H01L27/124 ,  G02F1/1362 ,  G02F1/136286 ,  G02F2001/136218 ,  G02F2001/136236 ,  H01L21/44 ,  H01L21/4885 ,  H01L27/1259 ,  H01L27/1288 ,  H01L27/156 ,  H01L29/41733 ,  H01L29/458 ,  H01L29/66765

Abstract: Embodiments of the present invention provide a TFT array substrate and a method for manufacturing the same and a display device. The TFT array substrate comprises: a base substrate; gate lines, gate electrodes, a gate insulating layer and a semiconductor active layer formed on the base substrate; a metal barrier layer formed on the semiconductor active layer, the metal barrier layer covering the semiconductor active layer; source electrodes and drain electrodes formed on the metal barrier layer, with a metal oxide part being formed between the source electrode and the drain electrode to insulate the source electrode and the drain electrode from each other; and a protection layer formed on the gate insulating layer and the source and drain electrodes, wherein the metal oxide part is formed by oxidizing a part of the metal barrier layer located between the source electrode and the drain electrode.

Abstract translation: 本发明的实施例提供一种TFT阵列基板及其制造方法以及显示装置。 TFT阵列基板包括：基底基板; 栅极线，栅电极，栅绝缘层和形成在基底基板上的半导体有源层; 形成在所述半导体有源层上的金属阻挡层，所述金属阻挡层覆盖所述半导体有源层; 源电极和漏电极，形成在金属阻挡层上，金属氧化物部分形成在源电极和漏电极之间，以使源电极和漏极彼此绝缘; 以及形成在所述栅极绝缘层和所述源极和漏极上的保护层，其中所述金属氧化物部分通过氧化位于所述源电极和所述漏极之间的所述金属阻挡层的一部分而形成。

公开(公告)号：US09202892B2

公开(公告)日：2015-12-01

申请号：US13980202

申请日：2012-12-10

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Xiang Liu ,  Jianshe Xue

IPC: H01L29/66 ,  H01L29/786 ,  H01L27/12

CPC classification number: H01L29/66742 ,  H01L27/1225 ,  H01L27/1288 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78693 ,  H01L2029/42388

Abstract: A manufacturing method of a TFT array substrate is provided. The method includes the following steps: respectively forming a metal oxide semiconductor layer, an etching barrier layer, a source electrode, a data line, a drain electrode, a pixel electrode, a gate insulating layer, a contact hole, a gate electrode and a gate scanning line on a substrate by patterning processes, wherein the metal oxide semiconductor layer and the etching barrier layer are formed by a same patterning process, and the source electrode, the drain electrode, the pixel electrode and the data line are formed by another same patterning process.

Abstract translation: 提供了TFT阵列基板的制造方法。 该方法包括以下步骤：分别形成金属氧化物半导体层，蚀刻阻挡层，源极，数据线，漏电极，像素电极，栅极绝缘层，接触孔，栅电极和 通过图案化工艺在衬底上的栅极扫描线，其中通过相同的图案化工艺形成金属氧化物半导体层和蚀刻阻挡层，并且源电极，漏电极，像素电极和数据线由另一个形成 图案化过程。

公开(公告)号：US20150291835A1

公开(公告)日：2015-10-15

申请号：US14235312

申请日：2013-08-05

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Lu Liu ,  Jianshe Xue ,  Shi Shu

IPC: C09D163/10 ,  C08K3/34 ,  C08K3/30 ,  C08K3/36 ,  C08G59/17 ,  C09D163/00

CPC classification number: C09D163/10 ,  C08G59/1461 ,  C08G59/1466 ,  C08G59/1494 ,  C08G59/308 ,  C08K3/30 ,  C08K3/34 ,  C08K3/36 ,  C08K2003/3045 ,  C09D163/00

Abstract: The present invention discloses a fluorine-modified epoxy acrylic resin, an UV-curable varnish and a method for preparing the same, and a method for coating the varnish on a substrate. The fluorine-modified epoxy acrylic resin is prepared by a process including the following steps: generating an epoxy acrylic resin via a ring-opening esterification reaction between an unsaturated mono-carboxylic acid and at least one epoxy group in an epoxy resin; and generating an epoxy acrylic resin containing fluorinated side groups via an esterification reaction between a fluorocarboxylic acid or a fluorocarboxylic acid anhydride and at least one hydroxy group in the epoxy acrylic resin. The UV-curable varnish according to the invention is prepared based on the fluorine-modified epoxy acrylic resin. When the varnish is applied to the surface of a substrate, at least one performance of the material, thereby the service life of the material itself may be improved.

Abstract translation: 本发明公开了氟改性环氧丙烯酸树脂，可UV固化清漆及其制备方法，以及在基材上涂布清漆的方法。 氟改性环氧丙烯酸树脂通过包括以下步骤的方法制备：通过环氧树脂中的不饱和单羧酸和至少一个环氧基之间的开环酯化反应产生环氧丙烯酸树脂; 以及通过氟代羧酸或氟代羧酸酐与环氧丙烯酸树脂中的至少一个羟基之间的酯化反应产生含有氟化侧基的环氧丙烯酸树脂。 根据本发明的可UV固化清漆是基于氟改性环氧丙烯酸树脂制备的。 当清漆施加到基材的表面时，材料的至少一种性能，从而可以提高材料本身的使用寿命。

公开(公告)号：US09159805B2

公开(公告)日：2015-10-13

申请号：US13704704

申请日：2012-09-28

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Tianming Dai ,  Jianshe Xue ,  Qi Yao ,  Feng Zhang

IPC: H01L29/04 ,  H01L29/10 ,  H01L29/66 ,  H01L27/32 ,  H01L29/16 ,  H01L29/786 ,  H01L27/12 ,  G02F1/1368

CPC classification number: H01L29/66742 ,  G02F1/1368 ,  H01L27/124 ,  H01L27/3262 ,  H01L29/1606 ,  H01L29/78684

Abstract: Embodiments of the present invention provide a thin film transistor (TFT) array substrate and a method for manufacturing the same and a display device. The TFT array substrate improves a structure of a TFT array substrate and has a small thickness, and process flow is simplified. The method for manufacturing a thin film transistor (TFT) array substrate comprises: obtaining a gate line and a gate electrode through a first patterning process on a glass substrate; forming a gate insulating layer on the gate line and the gate electrode; forming a graphene layer on the gate insulating layer, and obtaining a semiconductor active layer over the gate electrode by a second patterning process and a hydrogenation treatment; obtaining a data line, a source electrode, a drain electrode and a pixel electrode which are located on the same layer by a third patterning process; and forming a protection layer on the data line, the source electrode, the semiconductor active layer, the drain electrode and the pixel electrode.

Abstract translation: 本发明的实施例提供一种薄膜晶体管（TFT）阵列基板及其制造方法和显示装置。 TFT阵列基板改善了TFT阵列基板的结构，并且具有小的厚度，并且工艺流程被简化。 制造薄膜晶体管（TFT）阵列基板的方法包括：通过玻璃基板上的第一图案化工艺获得栅极线和栅电极; 在栅极线和栅电极上形成栅极绝缘层; 在所述栅极绝缘层上形成石墨烯层，并通过第二图案化工艺和氢化处理获得所述栅电极上的半导体活性层; 通过第三图案化工艺获得位于同一层上的数据线，源电极，漏电极和像素电极; 在数据线，源电极，半导体有源层，漏电极和像素电极上形成保护层。

公开(公告)号：US20150179809A1

公开(公告)日：2015-06-25

申请号：US14352182

申请日：2013-07-02

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Xiang Liu ,  Gang Wang ,  Jianshe Xue

IPC: H01L29/786 ,  H01L21/441 ,  H01L29/45 ,  H01L27/12 ,  H01L29/66 ,  H01L29/49

CPC classification number: H01L29/78606 ,  H01L21/441 ,  H01L27/1225 ,  H01L27/1259 ,  H01L29/45 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/78618 ,  H01L29/7869 ,  H01L29/78693

Abstract: A thin film transistor and method for manufacturing the same, an array substrate and a display device are disclosed. The thin film transistor comprises a substrate; a gate electrode, a source electrode, a drain electrode and a semiconductor layer formed on the substrate; a gate insulating layer between the gate electrode and the semiconductor layer or between the gate electrode and the source and drain electrodes; an etching stop layer between the semiconductor layer and the source and drain electrodes having a source contact hole and a drain contact hole therein; and a source buffer layer between the source electrode and the semiconductor layer and a drain buffer layer between the drain electrode and the semiconductor layer. The source and drain electrodes are metal Cu electrodes, and the source and drain buffer layers are Cu alloy layer. The formation of the source and drain buffer layer improves the adhesion of the source and drain electrodes thereon to the semiconductor layer therebeneath, and thus improves the performance of the TFT and image quality.

Abstract translation: 公开了一种薄膜晶体管及其制造方法，阵列基板和显示装置。 薄膜晶体管包括基板; 栅电极，源电极，漏电极和形成在基板上的半导体层; 栅电极和半导体层之间或栅电极与源电极和漏电极之间的栅极绝缘层; 半导体层与源漏漏电极之间的蚀刻停止层，其中具有源极接触孔和漏极接触孔; 以及源极和半导体层之间的源极缓冲层以及漏极和半导体层之间的漏极缓冲层。 源极和漏极是金属Cu电极，源极和漏极缓冲层是Cu合金层。 源极和漏极缓冲层的形成提高了源极和漏极电极到其上的半导体层的粘附性，从而提高了TFT的性能和图像质量。

公开(公告)号：US20140212659A1

公开(公告)日：2014-07-31

申请号：US13995463

申请日：2012-09-24

Applicant: BOE Technology Group Co., Ltd.

Inventor： Tianming Dai ,  Jianshe Xue

IPC: H01B1/04 ,  B32B9/04

CPC classification number: H01B1/04 ,  B32B9/007 ,  B32B9/041 ,  B32B9/045 ,  B32B27/281 ,  B32B27/304 ,  B32B27/32 ,  B32B27/36 ,  B32B27/365 ,  B32B27/38 ,  B32B37/025 ,  B32B2307/21 ,  B32B2307/412 ,  B32B2307/536 ,  B32B2307/584 ,  B32B2457/20 ,  C09K3/16 ,  H01L51/524 ,  Y10T428/265 ,  Y10T428/266 ,  Y10T428/30

Abstract: Embodiments of the present invention provide an antistatic protective film, a display device, and a preparation method of an antistatic protective film. The antistatic protective film comprises: a layer of substrate and a layer of graphene; the substrate and the graphene layer are adhered together. The antistatic protective film in accordance with the embodiment of the present invention, utilizes graphene to protect a component from being scratched by a foreign object or damaged by rubbing, and at the same time allows static electricity on an electronic component to be discharged in time, thus avoids the electronic component from being damaged by static electricity and prolongs the service life of the electronic component; meanwhile, the antistatic protective film has high light-transmittance, which greatly reduces the influence of the antistatic protective film on the output light of the electronic component.

Abstract translation: 本发明的实施例提供一种抗静电保护膜，显示装置和抗静电保护膜的制备方法。 抗静电保护膜包括：一层基底和一层石墨烯; 基板和石墨烯层粘合在一起。 根据本发明的实施方案的抗静电保护膜利用石墨烯来保护组分不被异物刮伤或被摩擦损坏，并且同时允许电子部件上的静电及时排出， 从而避免电子部件受到静电损伤，延长电子部件的使用寿命; 同时，抗静电保护膜具有高透光率，大大降低了抗静电保护膜对电子部件的输出光的影响。