公开(公告)号：US5926741A

公开(公告)日：1999-07-20

申请号：US888470

申请日：1997-07-07

申请人： Toshimasa Matsuoka ,  Masayuki Nakano ,  Hiroshi Iwata ,  Seizo Kakimoto

发明人： Toshimasa Matsuoka ,  Masayuki Nakano ,  Hiroshi Iwata ,  Seizo Kakimoto

IPC分类号： H01L29/78 ,  H01L21/28 ,  H01L21/316 ,  H01L21/318 ,  H01L29/51 ,  H01L21/31

CPC分类号： H01L21/28202 ,  H01L21/0214 ,  H01L21/0217 ,  H01L21/022 ,  H01L21/02238 ,  H01L21/02247 ,  H01L21/02249 ,  H01L21/02255 ,  H01L21/02301 ,  H01L21/28211 ,  H01L21/31662 ,  H01L29/513 ,  H01L29/518

摘要： In a method of forming gate dielectric films, a surface of a Si wafer is first cleaned in an inert gas ambient into a clean state having no naturally oxidized films. Then, after replacing the inert gas ambient with an oxidizing gas containing no nitrogen without exposing the wafer to air, the wafer is heated in the replaced ambient to form a first silicon oxide film on the silicon surface. Then, the ambient is again replaced with an oxidizing gas containing nitrogen, and the wafer is heated in the replaced ambient to form a first oxynitride film between the first silicon oxide film and the silicon. Thereafter, re-oxidation of the wafer is performed in an ambient of oxidizing gas containing no nitrogen to form a second silicon oxide film between the first oxynitride film and the silicon.

摘要翻译： 在形成栅极电介质膜的方法中，首先将Si晶片的表面在惰性气体环境中清洁成没有天然氧化膜的清洁状态。 然后，在用不含氮的氧化气体代替惰性气体环境而不将晶片暴露于空气之后，在更换的环境中加热晶片，以在硅表面上形成第一氧化硅膜。 然后，再次用含有氮的氧化气体代替环境，并且在更换的环境中加热晶片，以在第一氧化硅膜和硅之间形成第一氮氧化物膜。 此后，在不含氮的氧化气体的环境中进行晶片的再氧化，以在第一氮氧化物膜和硅之间形成第二氧化硅膜。

公开(公告)号：US07851777B2

公开(公告)日：2010-12-14

申请号：US12271837

申请日：2008-11-14

申请人： Nobutoshi Arai ,  Hiroshi Iwata ,  Seizo Kakimoto

发明人： Nobutoshi Arai ,  Hiroshi Iwata ,  Seizo Kakimoto

IPC分类号： H01L29/02

CPC分类号： H01L29/8615 ,  G11C13/0004 ,  H01L27/2409 ,  H01L27/2436 ,  H01L27/2481 ,  H01L45/10 ,  H01L45/1206 ,  H01L45/1226 ,  H01L45/1233 ,  H01L45/14 ,  H01L45/1608 ,  Y10S438/90

摘要： A resistance-changing function body includes an object made of a first substance and interposed between a first electrode and a second electrode, and a plurality of particles made of a second substance and arranged within the object so that an electrical resistance between the first electrode and the second electrode is changed before and after application of a specified voltage to between the first electrode and the second electrode. The first substance makes an electrical barrier against the second substance. With this constitution, by applying a specified voltage to between the first electrode and the second electrode, the electrical resistance can be changed depending on a state of the particles made of the second substance. Also, by virtue of a simple structure, a resistance-changing function body of small size is provided with low cost.

摘要翻译： 电阻变化功能体包括由第一物质制成的物体，介于第一电极和第二电极之间，以及多个由第二物质制成的颗粒并且布置在物体内，使得第一电极和第二电极之间的电阻 在第一电极和第二电极之间施加指定电压之前和之后改变第二电极。 第一物质对第二物质产生电阻。 利用这种结构，通过在第一电极和第二电极之间施加规定的电压，可以根据由第二物质制成的粒子的状态来改变电阻。 另外，由于结构简单，所以以低成本提供小尺寸的电阻变化功能体。

公开(公告)号：US20090085025A1

公开(公告)日：2009-04-02

申请号：US12271837

申请日：2008-11-14

申请人： Nobutoshi ARAI ,  Hiroshi Iwata ,  Seizo Kakimoto

发明人： Nobutoshi ARAI ,  Hiroshi Iwata ,  Seizo Kakimoto

IPC分类号： H01L45/00 ,  H01L21/265

CPC分类号： H01L29/8615 ,  G11C13/0004 ,  H01L27/2409 ,  H01L27/2436 ,  H01L27/2481 ,  H01L45/10 ,  H01L45/1206 ,  H01L45/1226 ,  H01L45/1233 ,  H01L45/14 ,  H01L45/1608 ,  Y10S438/90

摘要： A resistance-changing function body includes an object made of a first substance and interposed between a first electrode and a second electrode, and a plurality of particles made of a second substance and arranged within the object so that an electrical resistance between the first electrode and the second electrode is changed before and after application of a specified voltage to between the first electrode and the second electrode. The first substance makes an electrical barrier against the second substance. With this constitution, by applying a specified voltage to between the first electrode and the second electrode, the electrical resistance can be changed depending on a state of the particles made of the second substance. Also, by virtue of a simple structure, a resistance-changing function body of small size is provided with low cost.

摘要翻译： 电阻变化功能体包括由第一物质制成的物体，介于第一电极和第二电极之间，以及多个由第二物质制成的颗粒并且布置在物体内，使得第一电极和第二电极之间的电阻 在第一电极和第二电极之间施加指定电压之前和之后改变第二电极。 第一物质对第二物质产生电阻。 利用这种结构，通过在第一电极和第二电极之间施加规定的电压，可以根据由第二物质制成的粒子的状态来改变电阻。 另外，由于结构简单，所以以低成本提供小尺寸的电阻变化功能体。

公开(公告)号：US06682966B2

公开(公告)日：2004-01-27

申请号：US10171540

申请日：2002-06-17

申请人： Hiroshi Iwata ,  Seizo Kakimoto ,  Masayuki Nakano ,  Kouichiro Adachi

发明人： Hiroshi Iwata ,  Seizo Kakimoto ,  Masayuki Nakano ,  Kouichiro Adachi

IPC分类号： A01L2100

CPC分类号： H01L29/783 ,  H01L21/84 ,  H01L29/66628 ,  H01L29/66772 ,  H01L29/78615 ,  H01L29/78618 ,  H01L29/78654

摘要： A semiconductor device according to the present invention includes a semiconductor substrate; device isolation regions provided in the semiconductor substrate; a first conductivity type semiconductor layer provided between the device isolation regions; a gate insulating layer provided on an active region of the first conductivity type semiconductor layer; a gate electrode provided on the gate insulating layer; gate electrode side wall insulating layers provided on side walls of the gate electrode; and second conductivity type semiconductor layers provided adjacent to the gate electrode side wall insulating layers so as to cover a portion of the corresponding device isolation region, the second conductivity type semiconductor layers acting as a source region and/or a drain region. The gate electrode and the first conductivity type semiconductor layer are electrically connected to each other. The second conductivity type semiconductor layers are provided above the first conductivity type semiconductor layer and have a thickness which gradually increases from the device isolation region toward the gate electrode.

摘要翻译： 根据本发明的半导体器件包括半导体衬底; 设置在半导体衬底中的器件隔离区; 设置在所述器件隔离区之间的第一导电型半导体层; 设置在所述第一导电型半导体层的有源区上的栅极绝缘层; 设置在所述栅极绝缘层上的栅电极; 设置在栅电极的侧壁上的栅电极侧壁绝缘层; 以及与栅电极侧壁绝缘层相邻设置以覆盖对应的器件隔离区的一部分的第二导电类型半导体层，作为源区和/或漏区的第二导电类型半导体层。 栅电极和第一导电类型半导体层彼此电连接。 第二导电类型半导体层设置在第一导电类型半导体层之上，并且具有从器件隔离区朝向栅极电极逐渐增加的厚度。

公开(公告)号：US06297114B1

公开(公告)日：2001-10-02

申请号：US09205754

申请日：1998-12-04

申请人： Hiroshi Iwata ,  Masayuki Nakano ,  Seizo Kakimoto ,  Kouichirou Adachi ,  Satoshi Morishita

发明人： Hiroshi Iwata ,  Masayuki Nakano ,  Seizo Kakimoto ,  Kouichirou Adachi ,  Satoshi Morishita

IPC分类号： H01L21336

CPC分类号： H01L29/6659 ,  H01L21/0332 ,  H01L21/26586 ,  H01L21/28017 ,  H01L21/823807 ,  H01L27/0928 ,  H01L29/1083 ,  H01L29/665 ,  H01L29/7833

摘要： A semiconductor device having a gate electrode on a Si-substrate through a gate oxide film; a first impurity diffusion region having a conductivity type reversed to a well which will form a part of source and drain regions in the two opposing sides of the gate electrode through gate electrode sidewall dielectric films; a second impurity diffusion region having the same conductivity type as the first impurity diffusion region beneath the gate electrode sidewall dielectric film, touching a channel region directly below the gate electrode and being shallower than the first impurity diffusion region; a titanium silicide film on the gate electrode and the surface of the Si-substrate of the first impurity diffusion region in the two opposing sides of the gate electrode sidewall dielectric film; and a third impurity diffusion region, formed in the first impurity diffusion region, having a higher concentration than the first impurity diffusion region and the same conductivity type as the first and second impurity diffusion region. The above semiconductor device is able to suppress the short-channel effects, and reduce the source-drain parasitic resistance and the source-drain junction leakage current while maintaining a small source-drain capacity.

摘要翻译： 一种通过栅极氧化膜在Si衬底上具有栅电极的半导体器件; 具有与阱相反的导电类型的第一杂质扩散区，其将通过栅电极侧壁电介质膜在栅电极的两个相对侧中形成源区和漏区的一部分; 第二杂质扩散区，与栅电极侧壁电介质膜下方的第一杂质扩散区具有相同的导电类型，与栅电极正下方的沟道区相比，比第一杂质扩散区浅; 所述栅极电极上的钛硅化物膜和所述栅电极侧壁电介质膜的两个相对侧中的所述第一杂质扩散区域的所述Si衬底的表面; 和形成在第一杂质扩散区中的第三杂质扩散区，其具有比第一杂质扩散区高的浓度和与第一和第二杂质扩散区相同的导电类型。 上述半导体器件能够抑制短沟道效应，并且在保持较小的源极 - 漏极容量的同时降低源极 - 漏极寄生电阻和源极 - 漏极结漏电流。

公开(公告)号：US5976918A

公开(公告)日：1999-11-02

申请号：US985633

申请日：1997-12-04

申请人： Toshimasa Matsuoka ,  Masayuki Nakano ,  Satoshi Morishita ,  Hiroshi Iwata ,  Seizo Kakimoto ,  Takashi Fukushima

发明人： Toshimasa Matsuoka ,  Masayuki Nakano ,  Satoshi Morishita ,  Hiroshi Iwata ,  Seizo Kakimoto ,  Takashi Fukushima

IPC分类号： H01L29/78 ,  H01L21/314 ,  H01L21/318 ,  H01L21/324 ,  H01L21/00 ,  H01L21/20

CPC分类号： H01L21/3145

摘要： In accordance with the development of the fineness of MOSFETs, a gate insulating film and a capacitor insulating film are required to have a smaller thickness and a higher film quality. Accordingly, the present invention is intended to provide a method for forming a high-quality insulating film while preventing hydrogen atoms which cause a leak current and an electron trap from entering the insulating film. The present method uses a gas of molecules containing at least nitrogen, the gas is a compound which includes no oxygen atom and has no bond of a nitrogen atom and a hydrogen atom (N--H) and generates monoatomic nitrogen when the gas dissociates.

摘要翻译： 根据MOSFET的细度的发展，需要栅极绝缘膜和电容器绝缘膜具有更小的厚度和更高的膜质量。 因此，本发明旨在提供一种形成高品质绝缘膜的方法，同时防止引起漏电流的氢原子和电子陷阱进入绝缘膜。 本方法使用至少含有氮的分子气体，气体是不含氧原子的化合物，并且当气体解离时，不产生氮原子和氢原子（N-H）的键并产生单原子氮。

公开(公告)号：US20130221385A1

公开(公告)日：2013-08-29

申请号：US13820081

申请日：2011-06-22

申请人： Akihide Shibata ,  Tetsu Negishi ,  Kenji Komiya ,  Yoshifumi Yaoi ,  Takeshi Shiomi ,  Hiroshi Iwata ,  Akira Takahashi

发明人： Akihide Shibata ,  Tetsu Negishi ,  Kenji Komiya ,  Yoshifumi Yaoi ,  Takeshi Shiomi ,  Hiroshi Iwata ,  Akira Takahashi

IPC分类号： H01L33/64 ,  H01L33/58 ,  H01L33/08 ,  H01L33/42

CPC分类号： H01L33/64 ,  G02F1/133603 ,  H01L25/0753 ,  H01L31/035227 ,  H01L31/03529 ,  H01L31/052 ,  H01L31/054 ,  H01L31/0547 ,  H01L33/0079 ,  H01L33/08 ,  H01L33/14 ,  H01L33/18 ,  H01L33/20 ,  H01L33/24 ,  H01L33/26 ,  H01L33/32 ,  H01L33/42 ,  H01L33/58 ,  H01L2924/0002 ,  Y02E10/52 ,  H01L2924/00

摘要： A light-emitting element includes a first conductivity type semiconductor base, a plurality of first conductivity type protrusion-shaped semiconductors formed on the semiconductor base, and a second conductivity type semiconductor layer that covers the protrusion-shaped semiconductors.

摘要翻译： 发光元件包括第一导电型半导体基底，形成在半导体基底上的多个第一导电型突起状半导体，以及覆盖突起状半导体的第二导电型半导体层。

公开(公告)号：US20130027623A1

公开(公告)日：2013-01-31

申请号：US13634030

申请日：2011-02-22

申请人： Tetsu Negishi ,  Akihide Shibata ,  Kenji Komiya ,  Fumiyoshi Yoshioka ,  Hiroshi Iwata ,  Akira Takahashi

发明人： Tetsu Negishi ,  Akihide Shibata ,  Kenji Komiya ,  Fumiyoshi Yoshioka ,  Hiroshi Iwata ,  Akira Takahashi

IPC分类号： H01L33/08 ,  G02F1/136 ,  G02F1/13357 ,  H01L33/50 ,  H05B37/00

CPC分类号： G02F1/133603 ,  F21K9/00 ,  G02F1/133605 ,  G02F2001/133612 ,  G02F2001/133614 ,  G02F2001/133628 ,  H01L24/95 ,  H01L25/0753 ,  H01L33/06 ,  H01L33/18 ,  H01L33/20 ,  H01L33/38 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/00013 ,  H01L2924/09701 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/15787 ,  H01L2924/15788 ,  H01L2924/3025 ,  H01L2933/0041 ,  H01L2924/00 ,  H01L2924/00015 ,  H01L2924/00014 ,  H01L2224/13099 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/05099 ,  H01L2224/29099 ,  H01L2224/29599

摘要： A metal line 731 is formed in a linear area S of an insulative substrate 720, and moreover a metal line 732 is formed generally parallel to the metal line 731 with a specified distance thereto. The metal line 731 is connected to an n-type semiconductor core 701 of bar-like structure light-emitting elements 710A to 710D, and the metal line 732 is connected to a p-type semiconductor layer 702. By dividing the insulative substrate 720 into a plurality of divisional substrates, a plurality of light-emitting devices in each of which a plurality of bar-like structure light-emitting elements 710 are placed on the divisional substrates are formed.

摘要翻译： 金属线731形成在绝缘基板720的线性区域S中，此外，金属线732与金属线731大致平行地形成有规定的距离。 金属线731连接到棒状结构发光元件710A至710D的n型半导体芯701，并且金属线732连接到p型半导体层702.通过将绝缘衬底720分成 形成多个分割基板，在分割基板上形成多个棒状结构发光元件710的多个发光元件。

公开(公告)号：US07405974B2

公开(公告)日：2008-07-29

申请号：US10848324

申请日：2004-05-19

申请人： Yoshifumi Yaoi ,  Yasuaki Iwase ,  Hiroshi Iwata ,  Akihide Shibata ,  Yoshinao Morikawa ,  Masaru Nawaki

发明人： Yoshifumi Yaoi ,  Yasuaki Iwase ,  Hiroshi Iwata ,  Akihide Shibata ,  Yoshinao Morikawa ,  Masaru Nawaki

IPC分类号： G11C16/00

CPC分类号： G11C16/10 ,  G11C7/10 ,  G11C7/1039 ,  G11C2207/2245

摘要： A semiconductor memory device includes a page buffer circuit and an arrangement of memory elements each including: a gate electrode provided on a semiconductor layer with an intervening gate insulating film; a channel region provided beneath the gate electrode; a diffusion area provided on both sides of the channel region, having an opposite polarity to the channel region; and a memory functioning member provided on both sides of the gate electrodes, having a function of storing electric charge. The page buffer circuit provides a common resource shared between a memory array controller and a user. The page buffer circuit has two planes containing random access memory arrays. The page buffer circuit also includes a mode control section to facilitate access to the planes over a main bus in user mode and access to the planes by the memory array controller in memory control mode.

摘要翻译： 半导体存储器件包括页缓冲电路和存储元件的布置，每个存储元件包括：设置在具有中间栅极绝缘膜的半导体层上的栅电极; 设置在栅电极下方的沟道区; 扩散区，设置在沟道区的两侧，具有与沟道区相反的极性; 以及设置在栅电极两侧的具有存储电荷功能的记忆功能部件。 页面缓冲电路提供了在存储器阵列控制器和用户之间共享的公共资源。 页面缓冲电路具有包含随机存取存储器阵列的两个平面。 页面缓冲电路还包括模式控制部分，以便以用户模式访问主总线上的平面并且以存储器控制模式通过存储器阵列控制器访问平面。

公开(公告)号：US07312499B2

公开(公告)日：2007-12-25

申请号：US11414226

申请日：2006-05-01

申请人： Hiroshi Iwata ,  Takayuki Ogura ,  Akihide Shibata ,  Kouichirou Adachi

发明人： Hiroshi Iwata ,  Takayuki Ogura ,  Akihide Shibata ,  Kouichirou Adachi

IPC分类号： H01L29/792

CPC分类号： H01L27/11568 ,  G11C16/0491 ,  H01L21/28282 ,  H01L21/28291 ,  H01L21/76831 ,  H01L21/76897 ,  H01L27/115 ,  H01L29/42332 ,  H01L29/6656 ,  H01L29/66833 ,  H01L29/7887 ,  H01L29/7923 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor storage device includes a field effect transistor which has a gate insulator, a gate electrode and a pair of source/drain diffusion regions on a semiconductor substrate. The device also includes a coating film made of a dielectric having a function of storing electric charge and formed on the substrate in such a manner as to cover an upper surface and side surfaces of the gate electrode. The device further includes an interlayer insulator formed on and in contact with the coating film. The device still further includes contact members which extend vertically through the interlayer insulator and the coating film on the source/drain diffusion regions and which are electrically connected to the source/drain diffusion regions, respectively. The coating film and the interlayer insulator are made of materials which are selectively etchable to each other. Thus, the issues of overerase and read failures due to the overerase can be solved, and the device reliability can be enhanced.

摘要翻译： 半导体存储装置包括在半导体衬底上具有栅极绝缘体，栅极电极和一对源极/漏极扩散区域的场效应晶体管。 该装置还包括由电介质构成的涂膜，其具有存储电荷的功能，并以覆盖栅电极的上表面和侧表面的方式形成在基板上。 该装置还包括形成在涂膜上并与涂膜接触的层间绝缘体。 该装置还包括分别垂直延伸通过层间绝缘体和源极/漏极扩散区上的涂膜并且分别与源/漏扩散区电连接的接触构件。 涂膜和层间绝缘体由可相互选择性地蚀刻的材料制成。 因此，可以解决由于过度过热导致的过度读取和读取故障的问题，并且可以提高器件的可靠性。