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公开(公告)号：US20100026198A1
公开(公告)日：2010-02-04
申请号：US12510470
申请日：2009-07-28
CPC分类号： H01L21/26506
摘要： The light emitting device of the invention includes a first electrode, a second electrode, and a carrier formed between the first electrode and the second electrode and containing germanium light emitters, wherein the germanium light emitters contain germanium oxide in which at least part of the germanium oxide has oxygen deficiency and have a wavelength peak of emission in both or either the range of 250 to 350 nm and/or the range of 350 to 500 nm when a potential difference is applied to the first electrode and the second electrode.
摘要翻译： 本发明的发光器件包括第一电极，第二电极和形成在第一电极和第二电极之间并且包含锗发光体的载体，其中锗发光体包含锗氧化物，其中至少部分锗 当向第一电极和第二电极施加电位差时，氧化物具有缺氧并且在250至350nm的范围内和/或350至500nm的范围内都具有发射的波长峰值。
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公开(公告)号：US20050157529A1
公开(公告)日：2005-07-21
申请号：US10513959
申请日：2003-05-29
IPC分类号： G06K19/077 , G06K19/07 , H01L21/28 , H01L21/336 , H01L21/77 , H01L21/8244 , H01L21/8246 , H01L21/8247 , H01L21/84 , H01L27/105 , H01L27/11 , H01L27/115 , H01L27/12 , H01L29/788 , H01L29/792 , G11C11/22
CPC分类号： H01L27/11568 , H01L27/105 , H01L27/11 , H01L27/1116 , H01L27/115 , H01L27/11526 , H01L27/11531 , H01L27/1203 , H01L29/40117 , H01L29/66833 , H01L29/7923
摘要： An IC card includes a data memory portion (503) having a plurality of storage devices. The data storage devices each has: a semiconductor substrate, a well region provided in a semiconductor substrate, or a semiconductor film disposed on an insulator; a gate insulating film formed on the semiconductor substrate, the well region provided in the semiconductor substrate, or the semiconductor film disposed on the insulator; a single gate electrode formed on the gate insulating film; two memory function parts formed on opposite sides of the single gate electrode; a channel region disposed under the single gate electrode; and diffusion layer regions disposed on both sides of the channel region. Incorporating a memory using the storage devices, which allow further miniaturization, provides an IC card at low cost.
摘要翻译： IC卡包括具有多个存储装置的数据存储部分（503）。 数据存储装置各具有：半导体衬底，设置在半导体衬底中的阱区或设置在绝缘体上的半导体膜; 形成在半导体衬底上的栅极绝缘膜，设置在半导体衬底中的阱区或设置在绝缘体上的半导体膜; 形成在栅极绝缘膜上的单个栅电极; 形成在单个栅电极的相对侧上的两个记忆功能部件; 设置在所述单栅电极下方的沟道区域; 以及设置在沟道区两侧的扩散层区域。 结合使用存储装置的存储器，其允许进一步的小型化，以低成本提供IC卡。
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公开(公告)号：US08698193B2
公开(公告)日：2014-04-15
申请号：US12510470
申请日：2009-07-28
IPC分类号： H01L29/80
CPC分类号： H01L21/26506
摘要： The light emitting device of the invention includes a first electrode, a second electrode, and a carrier formed between the first electrode and the second electrode and containing germanium light emitters, wherein the germanium light emitters contain germanium oxide in which at least part of the germanium oxide has oxygen deficiency and have a wavelength peak of emission in both or either the range of 250 to 350 nm and/or the range of 350 to 500 nm when a potential difference is applied to the first electrode and the second electrode.
摘要翻译： 本发明的发光器件包括第一电极，第二电极和形成在第一电极和第二电极之间并且包含锗发光体的载体，其中锗发光体包含锗氧化物，其中至少部分锗 当向第一电极和第二电极施加电位差时，氧化物具有缺氧并且在250至350nm的范围内和/或350至500nm的范围内都具有发射的波长峰值。
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4.发明授权Semiconductor storage device and manufacturing method therefor, semiconductor device, portable electronic equipment and IC card 有权半导体存储器件及其制造方法，半导体器件，便携式电子设备和IC卡公开(公告)号：US07312499B2
公开(公告)日：2007-12-25
申请号：US11414226
申请日：2006-05-01
IPC分类号： H01L29/792
CPC分类号： H01L27/11568 , G11C16/0491 , H01L21/28282 , H01L21/28291 , H01L21/76831 , H01L21/76897 , H01L27/115 , H01L29/42332 , H01L29/6656 , H01L29/66833 , H01L29/7887 , H01L29/7923 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor storage device includes a field effect transistor which has a gate insulator, a gate electrode and a pair of source/drain diffusion regions on a semiconductor substrate. The device also includes a coating film made of a dielectric having a function of storing electric charge and formed on the substrate in such a manner as to cover an upper surface and side surfaces of the gate electrode. The device further includes an interlayer insulator formed on and in contact with the coating film. The device still further includes contact members which extend vertically through the interlayer insulator and the coating film on the source/drain diffusion regions and which are electrically connected to the source/drain diffusion regions, respectively. The coating film and the interlayer insulator are made of materials which are selectively etchable to each other. Thus, the issues of overerase and read failures due to the overerase can be solved, and the device reliability can be enhanced.
摘要翻译： 半导体存储装置包括在半导体衬底上具有栅极绝缘体，栅极电极和一对源极/漏极扩散区域的场效应晶体管。 该装置还包括由电介质构成的涂膜，其具有存储电荷的功能，并以覆盖栅电极的上表面和侧表面的方式形成在基板上。 该装置还包括形成在涂膜上并与涂膜接触的层间绝缘体。 该装置还包括分别垂直延伸通过层间绝缘体和源极/漏极扩散区上的涂膜并且分别与源/漏扩散区电连接的接触构件。 涂膜和层间绝缘体由可相互选择性地蚀刻的材料制成。 因此，可以解决由于过度过热导致的过度读取和读取故障的问题，并且可以提高器件的可靠性。
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5.发明授权Memory film, method of manufacturing the memory film, memory element, semiconductor storage device, semiconductor integrated circuit, and portable electronic equipment 失效存储膜，制造存储膜的方法，存储元件，半导体存储器件，半导体集成电路和便携式电子设备公开(公告)号：US07074676B2
公开(公告)日：2006-07-11
申请号：US10468738
申请日：2002-02-13
申请人： Hiroshi Iwata , Akihide Shibata , Nobutoshi Arai , Takayuki Ogura , Kouichirou Adachi , Seizo Kakimoto , Yukio Yasuda , Shigeaki Zaima , Akira Sakai
发明人： Hiroshi Iwata , Akihide Shibata , Nobutoshi Arai , Takayuki Ogura , Kouichirou Adachi , Seizo Kakimoto , Yukio Yasuda , Shigeaki Zaima , Akira Sakai
IPC分类号： H01L21/8247 , H01L29/788
CPC分类号： B82Y10/00 , H01L21/28273 , H01L27/115 , H01L29/42332 , Y10S438/962
摘要： A memory film operable at a low voltage and a method of manufacturing the memory film; the method, comprising the steps of forming a first insulation film (112) on a semiconductor substrate (111) forming a first electrode, forming a first conductor film (113) on the first insulation film (112), forming a second insulation film (112B) on the surface of the first conductor film (113), forming a third insulation film containing conductor particulates (114, 115) on the second insulation film (112B), and forming a second conductor film forming a second electrode on the third insulation film.
摘要翻译： 以低电压工作的记忆膜和制造该记忆膜的方法; 该方法包括以下步骤：在形成第一电极的半导体衬底（111）上形成第一绝缘膜（112），在第一绝缘膜（112）上形成第一导体膜（113），形成第二绝缘膜（ 112B），在第二绝缘膜（112B）上形成包含导体微粒（114,115）的第三绝缘膜，并在第二绝缘膜（112B）上形成第二导电膜，形成第二电极 第三绝缘膜。
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公开(公告)号：US07129539B2
公开(公告)日：2006-10-31
申请号：US10844474
申请日：2004-05-13
IPC分类号： H01L29/792
CPC分类号： H01L27/11568 , G11C16/0491 , H01L21/28282 , H01L21/28291 , H01L21/76831 , H01L21/76897 , H01L27/115 , H01L29/42332 , H01L29/6656 , H01L29/66833 , H01L29/7887 , H01L29/7923 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor storage device includes a field effect transistor which has a gate insulator, a gate electrode and a pair of source/drain diffusion regions on a semiconductor substrate. The device also includes a coating film made of a dielectric having a function of storing electric charge and formed on the substrate in such a manner as to cover an upper surface and side surfaces of the gate electrode. The device further includes an interlayer insulator formed on and in contact with the coating film. The device still further includes contact members which extend vertically through the interlayer insulator and the coating film on the source/drain diffusion regions and which are electrically connected to the source/drain diffusion regions, respectively. The coating film and the interlayer insulator are made of materials which are selectively etchable to each other. Thus, the issues of overerase and read failures due to the overerase can be solved, and the device reliability can be enhanced.
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7.发明授权公开(公告)号：US06297114B1
公开(公告)日：2001-10-02
申请号：US09205754
申请日：1998-12-04
IPC分类号： H01L21336
CPC分类号： H01L29/6659 , H01L21/0332 , H01L21/26586 , H01L21/28017 , H01L21/823807 , H01L27/0928 , H01L29/1083 , H01L29/665 , H01L29/7833
摘要： A semiconductor device having a gate electrode on a Si-substrate through a gate oxide film; a first impurity diffusion region having a conductivity type reversed to a well which will form a part of source and drain regions in the two opposing sides of the gate electrode through gate electrode sidewall dielectric films; a second impurity diffusion region having the same conductivity type as the first impurity diffusion region beneath the gate electrode sidewall dielectric film, touching a channel region directly below the gate electrode and being shallower than the first impurity diffusion region; a titanium silicide film on the gate electrode and the surface of the Si-substrate of the first impurity diffusion region in the two opposing sides of the gate electrode sidewall dielectric film; and a third impurity diffusion region, formed in the first impurity diffusion region, having a higher concentration than the first impurity diffusion region and the same conductivity type as the first and second impurity diffusion region. The above semiconductor device is able to suppress the short-channel effects, and reduce the source-drain parasitic resistance and the source-drain junction leakage current while maintaining a small source-drain capacity.
摘要翻译： 一种通过栅极氧化膜在Si衬底上具有栅电极的半导体器件; 具有与阱相反的导电类型的第一杂质扩散区，其将通过栅电极侧壁电介质膜在栅电极的两个相对侧中形成源区和漏区的一部分; 第二杂质扩散区，与栅电极侧壁电介质膜下方的第一杂质扩散区具有相同的导电类型，与栅电极正下方的沟道区相比，比第一杂质扩散区浅; 所述栅极电极上的钛硅化物膜和所述栅电极侧壁电介质膜的两个相对侧中的所述第一杂质扩散区域的所述Si衬底的表面; 和形成在第一杂质扩散区中的第三杂质扩散区，其具有比第一杂质扩散区高的浓度和与第一和第二杂质扩散区相同的导电类型。 上述半导体器件能够抑制短沟道效应，并且在保持较小的源极 - 漏极容量的同时降低源极 - 漏极寄生电阻和源极 - 漏极结漏电流。
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8.发明申请Semiconductor storage device and manufacturing method therefor, semiconductor device, portable electronic equipment and IC card 有权半导体存储器件及其制造方法，半导体器件，便携式电子设备和IC卡公开(公告)号：US20060208312A1
公开(公告)日：2006-09-21
申请号：US11414226
申请日：2006-05-01
IPC分类号： H01L29/792
CPC分类号： H01L27/11568 , G11C16/0491 , H01L21/28282 , H01L21/28291 , H01L21/76831 , H01L21/76897 , H01L27/115 , H01L29/42332 , H01L29/6656 , H01L29/66833 , H01L29/7887 , H01L29/7923 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor storage device includes a field effect transistor which has a gate insulator, a gate electrode and a pair of source/drain diffusion regions on a semiconductor substrate. The device also includes a coating film made of a dielectric having a function of storing electric charge and formed on the substrate in such a manner as to cover an upper surface and side surfaces of the gate electrode. The device further includes an interlayer insulator formed on and in contact with the coating film. The device still further includes contact members which extend vertically through the interlayer insulator and the coating film on the source/drain diffusion regions and which are electrically connected to the source/drain diffusion regions, respectively. The coating film and the interlayer insulator are made of materials which are selectively etchable to each other. Thus, the issues of overerase and read failures due to the overerase can be solved, and the device reliability can be enhanced.
摘要翻译： 半导体存储装置包括在半导体衬底上具有栅极绝缘体，栅极电极和一对源极/漏极扩散区域的场效应晶体管。 该装置还包括由电介质构成的涂膜，其具有存储电荷的功能，并以覆盖栅电极的上表面和侧表面的方式形成在基板上。 该装置还包括形成在涂膜上并与涂膜接触的层间绝缘体。 该装置还包括分别垂直延伸通过层间绝缘体和源极/漏极扩散区上的涂膜并且分别与源/漏扩散区电连接的接触构件。 涂膜和层间绝缘体由可相互选择性地蚀刻的材料制成。 因此，可以解决由于过度过热导致的过度读取和读取故障的问题，并且可以提高器件的可靠性。
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