公开(公告)号：US5513873A

公开(公告)日：1996-05-07

申请号：US343231

申请日：1994-10-18

Applicant: Shou-Mao Chen

Inventor： Shou-Mao Chen

IPC: B62B1/12

CPC classification number: B62B1/125 ,  Y10T16/451

Abstract: A handle of a push cart includes two rods slidably engaged in two tubes and each having a number of teeth. Two sleeves are secured on top of the tubes and each has a pair of lugs. Two pins are secured between the lugs. A resilient arm has two ends slidably engaged with the pins, the ends each includes a tooth for engaging with the teeth of the rods so as to secure the rods to the tubes. The teeth of the resilient arm are disengaged from the teeth of the rods when the resilient arm is depressed. A fence is secured to the sleeves for preventing the resilient arm from being depressed inadvertently.

Abstract translation: 推车的手柄包括两个可滑动地接合在两个管中的杆，每个具有多个齿。 两个袖子固定在管的顶部，每个都有一对凸耳。 两个销钉固定在凸耳之间。 弹性臂具有与销可滑动地接合的两端，端部各包括用于与杆的齿接合的齿，以将杆固定到管上。 当弹性臂被压下时，弹性臂的齿与杆的齿分离。 围栏固定在袖子上，以防止弹性臂被无意地压下。

公开(公告)号：US5459908A

公开(公告)日：1995-10-24

申请号：US329155

申请日：1994-10-24

Applicant: Shou-Mao Chen

Inventor： Shou-Mao Chen

IPC: B62B1/12 ,  B25G1/04

CPC classification number: B62B1/125 ,  B62B2202/24 ,  Y10T16/451

Abstract: A handle device includes two tubes slidably engaged in two pipes which has a number of teeth. A handle is secured on top of the tubes and has a hand grip slidably engaged in the lower portion. Two blocks are secured to the lower ends of the tubes. Two catches are slidably engaged in the blocks. Two bars are slidably engaged in the catches and the blocks and coupled to the hand grip. The catches are forced to engage with the teeth when the hand grip is not pulled and are disengaged from the teeth so as to release tubes from the pipes when the hand grip is released.

Abstract translation: 手柄装置包括可滑动地接合在具有多个齿的两个管中的两个管。 把手固定在管的顶部，并具有可滑动地接合在下部的手柄。 两个块固定在管的下端。 两个卡扣可滑动地嵌入块中。 两个杆可滑动地接合在卡扣和块中并且联接到手柄上。 当手柄不被拉动并且与手脱开时，卡扣被迫与齿接合，以便当手柄被释放时从管中释放管。

公开(公告)号：US08937389B2

公开(公告)日：2015-01-20

申请号：US13569017

申请日：2012-08-07

Applicant: Christianto Chih-Ching Liu ,  Shuo-Mao Chen ,  Der-Chyang Yeh ,  Shang-Yun Hou ,  Shin-Puu Jeng

Inventor： Christianto Chih-Ching Liu ,  Shuo-Mao Chen ,  Der-Chyang Yeh ,  Shang-Yun Hou ,  Shin-Puu Jeng

IPC: H01L23/48 ,  H01L21/4763 ,  H01L23/522 ,  H01L21/768 ,  H05K1/02

CPC classification number: H01L23/5226 ,  H01L21/76807 ,  H01L23/147 ,  H01L23/49827 ,  H01L23/5223 ,  H01L23/5227 ,  H01L2924/0002 ,  H05K1/0215 ,  H01L2924/00

Abstract: Semiconductor devices and methods of manufacture thereof are disclosed. In an embodiment, a method of manufacturing a semiconductor device includes forming a first conductive structure over a workpiece in a first metallization layer, the first conductive structure including a first portion having a first width and a second portion having a second width. The second width is different than the first width. The method includes forming a second conductive structure in a second metallization layer proximate the first metallization layer, and coupling a portion of the second conductive structure to the first portion of the first conductive structure.

Abstract translation: 公开了半导体器件及其制造方法。 在一个实施例中，制造半导体器件的方法包括在第一金属化层中在工件上形成第一导电结构，第一导电结构包括具有第一宽度的第一部分和具有第二宽度的第二部分。 第二宽度与第一宽度不同。 该方法包括在靠近第一金属化层的第二金属化层中形成第二导电结构，以及将第二导电结构的一部分耦合到第一导电结构的第一部分。

公开(公告)号：US08680647B2

公开(公告)日：2014-03-25

申请号：US13464081

申请日：2012-05-04

Applicant: Chen-Hua Yu ,  Shang-Yun Hou ,  Der-Chyang Yeh ,  Shuo-Mao Chen ,  Chiung-Han Yeh ,  Yi-Jou Lin

Inventor： Chen-Hua Yu ,  Shang-Yun Hou ,  Der-Chyang Yeh ,  Shuo-Mao Chen ,  Chiung-Han Yeh ,  Yi-Jou Lin

IPC: H01L23/31 ,  H01L23/498 ,  H01L23/538 ,  H01L23/64

CPC classification number: H01L21/56 ,  H01L23/3192 ,  H01L23/49816 ,  H01L23/49822 ,  H01L23/49894 ,  H01L23/5389 ,  H01L23/64 ,  H01L24/19 ,  H01L27/016 ,  H01L28/00 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/92125 ,  H01L2924/181 ,  H01L2924/18162 ,  H01L2924/19011 ,  H01L2924/1903 ,  H01L2924/19031 ,  H01L2924/19033 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/19104 ,  H01L2924/00012 ,  H01L2924/00

Abstract: A device includes a substrate, a metal pad over the substrate, and a passivation layer having a portion over the metal pad. A Post-Passivation Interconnect (PPI) line is disposed over the passivation layer and electrically coupled to the metal pad. An Under-Bump Metallurgy (UBM) is disposed over and electrically coupled to the PPI line. A passive device includes a portion at a same level as the UBM. The portion of the passive device is formed of a same material as the UBM.

Abstract translation: 一种器件包括衬底，衬底上的金属焊盘以及具有在金属焊盘上的部分的钝化层。 后钝化互连（PPI）线设置在钝化层上并电耦合到金属焊盘。 爆炸性冶金（UBM）被布置在电气耦合到PPI线路上。 无源设备包括与UBM处于相同水平的部分。 无源器件的部分由与UBM相同的材料形成。

公开(公告)号：US20110303984A1

公开(公告)日：2011-12-15

申请号：US12813379

申请日：2010-06-10

Applicant: Shuo-Mao Chen ,  Chin-Chou Liu

Inventor： Shuo-Mao Chen ,  Chin-Chou Liu

IPC: H01L27/088

CPC classification number: H01L23/4824 ,  H01L21/823456 ,  H01L21/82385 ,  H01L27/0207 ,  H01L27/088 ,  H01L27/092 ,  H01L29/1037 ,  H01L29/41758 ,  H01L29/4238 ,  H01L29/66659 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A quadrangle transistor unit includes four transistor units. Each of the four transistor units includes a gate electrode. The gate electrodes of the four transistor units are aligned to four sides of a square. At least two of the four transistor units are connected in parallel.

Abstract translation: 四边形晶体管单元包括四个晶体管单元。 四个晶体管单元中的每一个包括栅电极。 四个晶体管单元的栅电极与正方形的四个边对齐。 四个晶体管单元中的至少两个并联连接。

公开(公告)号：US07960031B2

公开(公告)日：2011-06-14

申请号：US10882530

申请日：2004-06-30

Applicant: James Edward Pickett ,  James Norman Cawse ,  Gert Boven ,  Gregory Ronald Gillette ,  Paul Sigston ,  Mao Chen ,  Gautam Ambalal Patel

Inventor： James Edward Pickett ,  James Norman Cawse ,  Gert Boven ,  Gregory Ronald Gillette ,  Paul Sigston ,  Mao Chen ,  Gautam Ambalal Patel

IPC: B32B27/08 ,  B32B27/34

CPC classification number: C09D161/28 ,  C08J7/047 ,  C08J2369/00 ,  C08J2461/00 ,  C08K5/3492 ,  C08L21/00 ,  C08L61/28 ,  C08L67/00 ,  C08L67/02 ,  C08L69/00 ,  C08L69/005 ,  C09D175/04 ,  Y10T428/24512 ,  Y10T428/31504 ,  Y10T428/31507 ,  Y10T428/31786 ,  Y10T428/31859 ,  Y10T428/31862 ,  Y10T428/31942 ,  C08L2666/02 ,  C08L2666/16

Abstract: A sheet material includes a polycarbonate substrate and a protective coating containing the reaction products of an aminoplast resin, a polyol compound, and a UV-absorbing amount of a triazine compound. The sheet material exhibits an improved balance of abrasion resistance, solvent resistance, weatherability, and formability.

Abstract translation: 片材包括聚碳酸酯基材和含有氨基塑料树脂，多元醇化合物和UV吸收量的三嗪化合物的反应产物的保护涂层。 片材具有改善的耐磨性，耐溶剂性，耐候性和成形性的平衡。

公开(公告)号：US20110118462A1

公开(公告)日：2011-05-19

申请号：US12621237

申请日：2009-11-18

Applicant: Mao CHEN ,  Shaoxuan Zhu ,  Xuebin Liu ,  Lizhen Zheng ,  Liwei Lin ,  Shuwen Xu ,  Yuping Wang ,  Wei Yang ,  Yunfeng Li ,  Fang Ye ,  Xiaona Zhang

Inventor： Mao CHEN ,  Shaoxuan Zhu ,  Xuebin Liu ,  Lizhen Zheng ,  Liwei Lin ,  Shuwen Xu ,  Yuping Wang ,  Wei Yang ,  Yunfeng Li ,  Fang Ye ,  Xiaona Zhang

IPC: C07D501/16

CPC classification number: C07D501/36

Abstract: The invention relates to N-heterocyclic substituent-containing antibiotics, their preparation, and their use. Disclosed are sodium and potassium salts of 7-(α-((N,N′-diisopropylamidino)thio)acetylamino)-3-(((1,2,5,6-tetrahydro-2-methyl-5,6-dioxo-1,2,4-triazin-3-yl)thio)methyl) cephalosporanic acid as presented by the general structure (I), their preparation, and their use. The antibiotics of the invention can be used to treat diseases caused by Gram-positive or Gram-negative bacteria such as septicaemia, gastrointestinal tract infection, and urinary tract infection. They have increased half-life in blood and lowered toxicity. They can reduce the frequency of drug use and lower medical treatment costs. They have improved stability and can be stored at ambient temperatures. The method of the invention is simple, and it produces high purity products which can meet the requirements of clinical use.

Abstract translation: 本发明涉及含有N-杂环取代基的抗生素，其制备及其应用。 公开了7-（α - （（N，N'-二异丙基脒基）硫基）乙酰氨基）-3 - （（（1,2,5,6-四氢-2-甲基-5,6-二氧代 -1,2,4-三嗪-3-基）硫基）甲基）头孢烷酸，其总体结构（I），它们的制备及其用途。 本发明的抗生素可用于治疗由革兰氏阳性或革兰氏阴性菌引起的疾病，例如败血症，胃肠道感染和尿路感染。 它们增加了血液中的半衰期，降低了毒性。 它们可以减少使用药物的频率，降低医疗费用。 它们具有改善的稳定性并且可以在环境温度下储存。 本发明的方法简单，产生可满足临床用途要求的高纯度产品。

公开(公告)号：US07649237B2

公开(公告)日：2010-01-19

申请号：US12121207

申请日：2008-05-15

Applicant: Shou-Mao Chen

Inventor： Shou-Mao Chen

IPC: H01L29/47

CPC classification number: H01L29/7391 ,  H01L27/0814 ,  H01L27/095 ,  H01L29/1604 ,  H01L29/161 ,  H01L29/20 ,  H01L29/47 ,  H01L29/4916 ,  H01L29/4925 ,  H01L29/517 ,  H01L29/518 ,  H01L29/66143 ,  H01L29/66356 ,  H01L29/872

Abstract: A semiconductor diode that eliminates leakage current and reduces parasitic resistance is disclosed. The semiconductor diode comprises a semiconductor substrate; a semiconductor layer disposed on the semiconductor substrate, wherein the semiconductor layer includes a first dopant and a first well with a Schottky region; and a polysilicon device positioned above the semiconductor layer and adjacent to the first well with the Schottky region.

Abstract translation: 公开了一种消除泄漏电流并降低寄生电阻的半导体二极管。 半导体二极管包括半导体衬底; 设置在所述半导体衬底上的半导体层，其中所述半导体层包括第一掺杂剂和具有肖特基区域的第一阱; 以及位于半导体层上方并与肖特基区域相邻的第一阱的多晶硅器件。

公开(公告)号：US20090283851A1

公开(公告)日：2009-11-19

申请号：US12121207

申请日：2008-05-15

Applicant: Shou-Mao Chen

Inventor： Shou-Mao Chen

IPC: H01L29/47

CPC classification number: H01L29/7391 ,  H01L27/0814 ,  H01L27/095 ,  H01L29/1604 ,  H01L29/161 ,  H01L29/20 ,  H01L29/47 ,  H01L29/4916 ,  H01L29/4925 ,  H01L29/517 ,  H01L29/518 ,  H01L29/66143 ,  H01L29/66356 ,  H01L29/872

Abstract: A semiconductor diode that eliminates leakage current and reduces parasitic resistance is disclosed. The semiconductor diode comprises a semiconductor substrate; a semiconductor layer disposed on the semiconductor substrate, wherein the semiconductor layer includes a first dopant and a first well with a Schottky region; and a polysilicon device positioned above the semiconductor layer and adjacent to the first well with the Schottky region.

Abstract translation: 公开了一种消除泄漏电流并降低寄生电阻的半导体二极管。 半导体二极管包括半导体衬底; 设置在所述半导体衬底上的半导体层，其中所述半导体层包括第一掺杂剂和具有肖特基区域的第一阱; 以及位于半导体层上方并与肖特基区域相邻的第一阱的多晶硅器件。

公开(公告)号：US07516131B2

公开(公告)日：2009-04-07

申请号：US11437222

申请日：2006-05-19

Applicant: Mao Chen ,  Mitchell A. Cohen ,  Rakesh Mohan ,  Ram Rajagopal ,  Jakka Sairamesh ,  Stephen V. Stibler

Inventor： Mao Chen ,  Mitchell A. Cohen ,  Rakesh Mohan ,  Ram Rajagopal ,  Jakka Sairamesh ,  Stephen V. Stibler

IPC: G06F17/30

CPC classification number: G06F17/3053 ,  G06F17/30528 ,  G06F17/30598 ,  Y10S707/99935 ,  Y10S707/99937

Abstract: Techniques are provided for ranking-based information processing. Method steps can include integrating information from at least one source (a plurality of heterogeneous sources can also be handled), to obtain integrated information; mapping the integrated information to at least one application; ranking the integrated information based on the mapping and on ranking criteria from a knowledge base; and processing the integrated information, based on the ranking, to obtain processed integrated information. Optionally, the processing step includes formatting the processed integrated information for a plurality of applications.

Abstract translation: 为基于排名的信息处理提供技术。 方法步骤可以包括集成来自至少一个源的信息（也可以处理多个异构源），以获得综合信息; 将集成信息映射到至少一个应用程序; 根据知识库的映射和排名标准对综合信息进行排名; 并根据排名处理综合信息，获得处理后的综合信息。 可选地，处理步骤包括格式化用于多个应用的​​经处理的综合信息。