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21.发明授权公开(公告)号：US08338953B2
公开(公告)日：2012-12-25
申请号：US13164180
申请日：2011-06-20
CPC分类号： H01L23/53238 , H01L21/2855 , H01L21/76805 , H01L21/76844 , H01L21/76846 , H01L21/76865 , H01L21/76873 , H01L23/5226 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： A method of manufacturing a semiconductor device has forming, in a dielectric film, a first opening and a second opening located in the first opening, forming a first metal film containing a first metal over a whole surface, etching the first metal film at a bottom of the second opening using a sputtering process and forming a second metal film containing a second metal over the whole surface, and burying a conductive material in the second opening and the first opening.
摘要翻译： 制造半导体器件的方法在电介质膜中形成位于第一开口中的第一开口和第二开口，在整个表面上形成含有第一金属的第一金属膜，在底部蚀刻第一金属膜 的第二开口，并且在整个表面上形成含有第二金属的第二金属膜，并且在第二开口和第一开口中埋入导电材料。
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公开(公告)号：US08148262B2
公开(公告)日：2012-04-03
申请号：US12793216
申请日：2010-06-03
IPC分类号： H01L21/44
CPC分类号： H01L29/665 , H01L21/2686 , H01L21/28052 , H01L21/28097 , H01L21/28518 , H01L21/76816 , H01L21/76834 , H01L21/76897 , H01L21/823814 , H01L21/823835 , H01L21/823842 , H01L21/823857 , H01L29/4975
摘要： A method of manufacturing a semiconductor device includes forming a gate electrode, a source region and a drain region, forming a first metal layer, forming silicide layers by first annealing, removing a remainder of the first metal layer after the first annealing, performing a second annealing, forming a second metal layer, performing a third annealing, and removing a remainder of the second metal layer.
摘要翻译： 一种制造半导体器件的方法包括：形成栅电极，源区和漏区，形成第一金属层，通过第一退火形成硅化物层，在第一退火之后除去第一金属层的剩余部分，执行第二金属层 退火，形成第二金属层，进行第三退火，以及除去第二金属层的剩余部分。
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公开(公告)号：US20100330812A1
公开(公告)日：2010-12-30
申请号：US12819708
申请日：2010-06-21
申请人： Shinichi Akiyama , Kazuya Okubo , Nobuyuki Ohtsuka
发明人： Shinichi Akiyama , Kazuya Okubo , Nobuyuki Ohtsuka
IPC分类号： H01L21/31
CPC分类号： H01L21/02109 , H01L21/02178 , H01L21/02181 , H01L21/02192 , H01L21/02194 , H01L21/022 , H01L21/02321 , H01L21/823857
摘要： A method for manufacturing a semiconductor device includes forming a first-conductivity-type well and a second-conductivity-type well in a silicon substrate; stacking a first high-dielectric-constant insulating film and a first cap dielectric film above the silicon substrate; removing at least the first cap dielectric film from above the second-conductivity-type well; conducting a first annealing at a first temperature to cause an element included in the first cap dielectric film to diffuse into the first high-dielectric-constant insulating film disposed above the first-conductivity-type well; after the first annealing, stacking a second high-dielectric-constant insulating film and a second cap dielectric film above the silicon substrate; removing the second cap dielectric film disposed above the first-conductivity-type well; and conducting a second annealing at a second temperature lower than the first temperature to cause an element included in the second cap dielectric film to diffuse into the second high-dielectric-constant insulating film disposed above the second-conductivity-type well.
摘要翻译： 一种制造半导体器件的方法包括在硅衬底中形成第一导电型阱和第二导电型阱; 在硅衬底之上堆叠第一高介电常数绝缘膜和第一帽电介质膜; 从所述第二导电型阱的上方至少去除所述第一盖电介质膜; 在第一温度下进行第一退火，使包含在第一盖电介质膜中的元素扩散到位于第一导电型阱之上的第一高介电常数绝缘膜; 在第一退火之后，在硅衬底上层叠第二高介电常数绝缘膜和第二帽电介质膜; 去除设置在第一导电型阱之上的第二盖电介质膜; 以及在比所述第一温度低的第二温度下进行第二退火，以使包含在所述第二盖电介质膜中的元素扩散到位于所述第二导电型阱之上的所述第二高介电常数绝缘膜中。
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24.发明授权Method of forming a laminated structure to enhance metal silicide adhesion on polycrystalline silicon 失效形成叠层结构以增强多晶硅上的金属硅化物附着力的方法公开(公告)号：US06489208B2
公开(公告)日：2002-12-03
申请号：US10042148
申请日：2002-01-11
IPC分类号： H01L2128
CPC分类号： H01L29/4933 , H01L21/28061 , H01L21/76889 , H01L2924/0002 , H01L2924/00
摘要： A method of forming a gate electrode of a multi-layer structure includes a step of supplying a processing gas for poly-crystal film formation and impurities of a P-type into a film formation device, to form a poly-crystal silicon layer doped with P-type impurities, on a surface of a gate film target, a step of maintaining the processing target in the film formation device to prevent formation of an oxide film on the poly-crystal silicon layer; and a step of supplying a processing gas for tungsten silicide film formation and impurities of a P-type into the film formation device, to form a tungsten silicide layer doped with impurities of P-type impurities, on the poly-crystal silicon layer on which no oxide film is formed.
摘要翻译： 形成多层结构的栅电极的方法包括：向成膜器件提供多晶硅膜形成处理气体和P型杂质的步骤，以形成掺杂有多晶硅层的多晶硅层 P型杂质，在栅极膜靶的表面上，保持成膜装置中的处理对象以防止在多晶硅层上形成氧化膜的步骤; 以及向所述成膜装置供给硅化钨成膜用处理气体和P型杂质的工序，在所述多晶硅层上形成掺杂有P型杂质的杂质的硅化钨层， 不形成氧化膜。
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公开(公告)号：US06251188B1
公开(公告)日：2001-06-26
申请号：US09473682
申请日：1999-12-29
IPC分类号： C23C1600
CPC分类号： C23C16/45565 , C23C16/4404 , C23C16/4405 , C23C16/45561
摘要： Pre-coating films are formed in a pretreatment by supplying first film-forming gases into a process chamber of a process vessel while heating the process chamber so as to form a first pre-coating film on the inner surface of the process vessel exposed to the process chamber, followed by supplying second film-forming gases into the process chamber to form a second pre-coating film on the first pre-coating film. A semiconductor wafer is loaded into the process chamber. Then, the first gases are supplied into the process chamber while heating the process chamber so as to form a first layer on the wafer, followed by supplying the second gases into the process chamber so as to form a second layer on the first layer. A silane gas is supplied into the process chamber to permit silicon material to be deposited on the surface of the second layer stacked on the first layer. Finally, the wafer having the first and second multi-film is unloaded out of the process vessel.
摘要翻译： 在预处理中，通过将第一成膜气体提供到处理容器的处理室中，同时加热处理室以在暴露于该处理容器的处理容器的内表面上形成第一预涂膜，从而在预处理中形成预涂膜 处理室，然后将第二成膜气体供应到处理室中，以在第一预涂膜上形成第二预涂膜。 将半导体晶片装载到处理室中。 然后，在加热处理室的同时，将第一气体供给到处理室中，以在晶片上形成第一层，然后将第二气体供应到处理室中，以在第一层上形成第二层。 将硅烷气体供应到处理室中以允许硅材料沉积在堆叠在第一层上的第二层的表面上。 最后，将具有第一和第二多层膜的晶片从处理容器中卸载出来。
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公开(公告)号：US06245673B1
公开(公告)日：2001-06-12
申请号：US09385848
申请日：1999-08-30
IPC分类号： H01L213205
CPC分类号： C23C16/42 , H01L21/28518
摘要： A first tungsten silicide layer relatively rich in silicon is formed on an object by using a process gas having a phosphorus atom-containing gas added thereto, and a second tungsten silicide layer relatively rich in tungsten is formed on the first tungsten silicide layer, so that a tungsten silicide film is formed. The addition amount of the phosphorus atom-containing gas to the process gas is 0.02 to 0.2% by volume “in terms of a phosphine gas”.
摘要翻译： 通过使用添加了含有磷原子的气体的处理气体，在物体上形成比较富硅的第一硅化钨层，在第一硅化钨层上形成比较富含钨的第二硅化钨层， 形成硅化钨膜。 含磷原子的气体相对于处理气体的添加量为“以磷化氢气体计算”为0.02体积％〜0.2体积％。
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公开(公告)号：US5300520A
公开(公告)日：1994-04-05
申请号：US690668
申请日：1991-04-24
申请人： Akira Igarashi , Koh Ogura , Masayuki Asai , Kazuya Okubo , Yosei Kuwazuru
发明人： Akira Igarashi , Koh Ogura , Masayuki Asai , Kazuya Okubo , Yosei Kuwazuru
摘要： A wood preservative composition which comprises a wood preservative in an amount of 0.01-10% by weight and a diphenylalkane compound represented by the general formula ##STR1## wherein R.sup.1, R.sup.2, R.sup.3, R.sup.4 and R.sup.5 are independently hydrogen or an alkyl, in an amount of not less than 1% by weight and in an amount of 1-1000 parts by weight in relation to one part by weight of the wood preservative.
摘要翻译： 一种木材防腐剂组合物，其包含0.01-10重量％的木材防腐剂和由通式（* CHEMICAL STRUCTURE *）表示的二苯基烷烃化合物，其中R 1，R 2，R 3，R 4和R 5独立地是氢或烷基 ，相对于木材防腐剂的1重量份，其量为不小于1重量％，量为1-1000重量份。
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28.发明申请POLYPHENYLENE SULFIDE RESIN COMPOSITION AND MOLDING COMPRISING SAME (AS AMENDED) 有权聚苯乙烯树脂组合物和模塑（包括）公开(公告)号：US20140100306A1
公开(公告)日：2014-04-10
申请号：US14114360
申请日：2012-06-22
申请人： Kazuya Okubo , Atsushi Ishio , Yuki Ota
发明人： Kazuya Okubo , Atsushi Ishio , Yuki Ota
IPC分类号： C08L81/04
摘要： The invention provides a polyphenylene sulfide resin composition including: 1 to 100 parts by weight of an olefin elastomer (B); and 0.01 to 10 parts by weight of a carboxylic acid amide wax mixture (C), relative to 100 parts by weight of a polyphenylene sulfide resin (A), wherein the carboxylic acid amide wax mixture (C) is obtained by adding 0.01 to 5 parts by weight of an antioxidant to 100 parts by weight of a carboxylic acid amide wax produced by reaction of a higher aliphatic monocarboxylic acid, a polybasic acid and a diamine.
摘要翻译： 本发明提供一种聚苯硫醚树脂组合物，其包含：1〜100重量份的烯烃弹性体（B）; 和相对于100重量份聚苯硫醚树脂（A）的羧酸酰胺蜡混合物（C）为0.01〜10重量份，其中，羧酸酰胺蜡混合物（C）通过添加0.01〜5 通过高级脂族一元羧酸，多元酸和二胺反应制得的羧酸酰胺蜡100重量份，将抗氧化剂重量份。
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29.发明申请公开(公告)号：US20110241211A1
公开(公告)日：2011-10-06
申请号：US13164180
申请日：2011-06-20
IPC分类号： H01L23/532
CPC分类号： H01L23/53238 , H01L21/2855 , H01L21/76805 , H01L21/76844 , H01L21/76846 , H01L21/76865 , H01L21/76873 , H01L23/5226 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： A method of manufacturing a semiconductor device has forming, in a dielectric film, a first opening and a second opening located in the first opening, forming a first metal film containing a first metal over a whole surface, etching the first metal film at a bottom of the second opening using a sputtering process and forming a second metal film containing a second metal over the whole surface, and burying a conductive material in the second opening and the first opening.
摘要翻译： 制造半导体器件的方法在电介质膜中形成位于第一开口中的第一开口和第二开口，在整个表面上形成含有第一金属的第一金属膜，在底部蚀刻第一金属膜 的第二开口，并且在整个表面上形成含有第二金属的第二金属膜，并且在第二开口和第一开口中埋入导电材料。
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30.发明授权公开(公告)号：US08030207B2
公开(公告)日：2011-10-04
申请号：US12110662
申请日：2008-04-28
IPC分类号： H01L21/4763 , H01L21/302
CPC分类号： H01L23/53238 , H01L21/2855 , H01L21/76805 , H01L21/76844 , H01L21/76846 , H01L21/76865 , H01L21/76873 , H01L23/5226 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： A method of manufacturing a semiconductor device has forming, in a dielectric film, a first opening and a second opening located in the first opening, forming a first metal film containing a first metal over a whole surface, etching the first metal film at a bottom of the second opening using a sputtering process and forming a second metal film containing a second metal over the whole surface, and burying a conductive material in the second opening and the first opening.
摘要翻译： 制造半导体器件的方法在电介质膜中形成位于第一开口中的第一开口和第二开口，在整个表面上形成含有第一金属的第一金属膜，在底部蚀刻第一金属膜 的第二开口，并且在整个表面上形成含有第二金属的第二金属膜，并且在第二开口和第一开口中埋入导电材料。
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