发明申请
- 专利标题： METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE
- 专利标题（中）： 制造半导体器件和半导体器件的方法
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申请号： US13164180申请日： 2011-06-20
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公开(公告)号： US20110241211A1公开(公告)日： 2011-10-06
- 发明人: Shinichi AKIYAMA , Kazuo KAWAMURA , Hisaya SAKAI , Hirofumi WATATANI , Kazuya OKUBO
- 申请人： Shinichi AKIYAMA , Kazuo KAWAMURA , Hisaya SAKAI , Hirofumi WATATANI , Kazuya OKUBO
- 申请人地址： JP Yokohama-shi
- 专利权人： FUJITSU SEMICONDUCTOR LIMITED
- 当前专利权人： FUJITSU SEMICONDUCTOR LIMITED
- 当前专利权人地址： JP Yokohama-shi
- 优先权： JP2007-119144 20070427
- 主分类号： H01L23/532
- IPC分类号： H01L23/532
摘要：
A method of manufacturing a semiconductor device has forming, in a dielectric film, a first opening and a second opening located in the first opening, forming a first metal film containing a first metal over a whole surface, etching the first metal film at a bottom of the second opening using a sputtering process and forming a second metal film containing a second metal over the whole surface, and burying a conductive material in the second opening and the first opening.
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