Methods for fabricating resistive random-access memory stacks

    公开(公告)号:US11985911B2

    公开(公告)日:2024-05-14

    申请号:US17651790

    申请日:2022-02-19

    申请人: TetraMem Inc.

    发明人: Minxian Zhang Ning Ge

    IPC分类号: H01L29/06 H10B63/00 H10N70/00

    摘要: Technologies relating to RRAM crossbar array circuits with specialized interface layers for the low current operations are disclosed. An example apparatus includes: a substrate; a bottom electrode formed on the substrate; a first layer formed on the bottom electrode; an RRAM oxide layer formed on the first layer and the bottom electrode; and a top electrode formed on the RRAM oxide layer. The first layer may be a continuous layer or a discontinuous layer. The apparatus may further comprise a second layer formed between the RRAM oxide layer and the top electrode. The second layer may be a continuous layer or a discontinuous layer.

    Unloading device
    22.
    发明授权

    公开(公告)号:US11978566B2

    公开(公告)日:2024-05-07

    申请号:US17045076

    申请日:2019-07-31

    IPC分类号: G21C19/02 B65G65/48 G21C19/20

    摘要: The present application relates to the field of mechanical engineering technologies, and particularly to an unloading device. The unloading device includes a power mechanism, a transmission mechanism, and an execution mechanism that are connected in sequence from top to bottom; wherein the execution mechanism includes a shafting assembly and a turntable assembly that are connected in sequence from top to bottom; wherein the turntable assembly includes an upper auxiliary fence, a middle main disturbance disk, and a lower reclaiming portion that are arranged in sequence from top to bottom. The unloading device provided by the present application is easy to control, and ensures the reclaiming reliability of the spherical materials and the stability of the sphere flow unloading, which can meet the requirements of long life and reliable operation of the unloading device under light load and low speed working conditions and achieve the convenient maintenance.

    Edge enhancement with compensation mechanism

    公开(公告)号:US11956403B1

    公开(公告)日:2024-04-09

    申请号:US18181614

    申请日:2023-03-10

    IPC分类号: H04N1/00 H04N1/405 H04N1/52

    CPC分类号: H04N1/4052 H04N1/52

    摘要: A system is disclosed. The system includes at least one physical memory device to store edge enhancement logic and one or more processors coupled with the at least one physical memory device to execute the edge enhancement logic to receive a plurality of pels in a continuous tone image (CTI), receive compensation data for pel forming elements associated with each of the plurality of pels, receive edge enhancement transfer functions, determine whether each of the plurality of pels is an edge pel, perform edge enhancement processing for each of the determined edge pels, including generating a final pel value for the pel based on the pel value for the pel, the edge enhancement transfer function associated with the pel, and the compensation data associated with the pel and perform compensation processing for each of the determined not edge pels, including generating a final pel value for the pel based on the pel value for the pel, and the compensation data associated with the pel.