公开(公告)号：US10964508B2

公开(公告)日：2021-03-30

申请号：US16620065

申请日：2017-07-28

Applicant: Hitachi High-Tech Corporation

Inventor： Yuzuru Mizuhara ,  Kouichi Kurosawa

IPC: H01J37/05 ,  H01J37/244

Abstract: The purpose of the present invention is to provide a charged-particle beam device capable of stable performance of processes such as a measurement or test, independent of fluctuations in sample electric electric potential or the like. To this end, this charged-particle beam device comprises an energy filter for filtering the energy of charged particles released from the sample and a deflector for deflecting the charged particles released from the sample toward the energy filter. A control device generates a first image on the basis of the output of a detector, adjusts the voltage applied to the energy filter so that the first image reaches a prescribed state, and calculates deflection conditions for the deflector on the basis of the post-adjustment voltage applied to the energy filter.

公开(公告)号：US10861667B2

公开(公告)日：2020-12-08

申请号：US16686994

申请日：2019-11-18

Applicant: Peter F. Vandermeulen

Inventor： Peter F. Vandermeulen

IPC: H01J37/14 ,  H01J37/05 ,  H05H1/46 ,  H01J37/08 ,  H01J37/317

Abstract: An ion beam treatment or implantation system includes an ion source emitting ion beams. The ion source includes a microwave source and a curved waveguide conduit having openings therein. The waveguide conduit is coupled to the microwave source for transmitting microwaves from the microwave source through the plurality of openings. The ion source also includes a curved plasma chamber in communication with the waveguide conduit through the openings. The plasma chamber receives through the openings microwaves from the waveguide conduit. The plasma chamber includes magnets disposed in an outer wall of the plasma chamber for forming a magnetic field in the plasma chamber. The plasma chamber further includes a charged cover at a side of the chamber opposite the side containing the openings. The cover includes extraction holes through which the ion beams are extracted.

公开(公告)号：US10763073B2

公开(公告)日：2020-09-01

申请号：US16256124

申请日：2019-01-24

Applicant: NISSIN ION EQUIPMENT CO., LTD.

Inventor： Tetsuro Yamamoto

IPC: H01J37/08 ,  H01J37/05

Abstract: An ion source is provided. The ion source includes a plasma generation container, an electron supply, an electromagnet and a shift means. The plasma generation container generates an ion beam to be extracted therefrom in an ion beam extraction direction. The electron supply supplies electrons into the plasma generation container. The electromagnet generates a magnetic field for capturing the electrons from the electron supply. The shift means shifts a center of the magnetic field in the ion beam extraction direction to change a rate of a desired type of ion to be contained in the ion beam.

公开(公告)号：US10763072B1

公开(公告)日：2020-09-01

申请号：US16354638

申请日：2019-03-15

Applicant: APPLIED Materials, Inc.

Inventor： Frank Sinclair ,  Costel Biloiu ,  Joseph C. Olson ,  Alexandre Likhanskii

IPC: H01J37/05 ,  H01J37/317 ,  H01J37/147

Abstract: An apparatus may include a housing including an entrance aperture, to receive an ion beam. The apparatus may include an exit aperture, disposed in the housing, downstream to the entrance aperture, the entrance aperture and the exit aperture defining a beam axis, extending therebetween. The apparatus may include an electrodynamic mass analysis assembly disposed in the housing and comprising an upper electrode assembly, disposed above the beam axis, and a lower electrode assembly, disposed below the beam axis. The apparatus may include an AC voltage assembly, electrically coupled to the upper electrode assembly and the lower electrode assembly, wherein the upper electrode assembly is arranged to receive an AC signal from the AC voltage assembly at a first phase angle, and wherein the lower electrode assembly is arranged to receive the AC signal at a second phase angle, the second phase angle 180 degrees shifted from the first phase angle.

公开(公告)号：US20200273665A1

公开(公告)日：2020-08-27

申请号：US16646501

申请日：2017-09-29

Applicant: Hitachi High-Technologies Corporation

Inventor： Hideo MORISHITA ,  Toshihide AGEMURA

IPC: H01J37/28 ,  H01J37/244 ,  H01J37/05 ,  H01J37/14 ,  H01J37/147 ,  H01J37/32

Abstract: Provided is a scanning electron microscope provided with an energy selection and detection function for a SE1 generated on a sample while suppressing the detection amount of a SE3 excited due to a BSE in the scanning electron microscope that does not apply a deceleration method. Provided are: an electron optical system that includes an electron source 21 generating an irradiation electron beam and an objective lens 12 focusing the irradiation electron beam on a sample; a detector 13 that is arranged outside an optical axis of the electron optical system and detects a signal electron generated when the sample is irradiated with the irradiation electron beam; a deflection electrode that forms a deflection field 26 to guide the signal electron to the detector; a disk-shaped electrode 23 that is arranged to be closer to the electron source than the deflection field and has an opening through which the irradiation electron beam passes; and a control electrode arranged along the optical axis to be closer to the sample than the deflection field. The sample and the objective lens are set to a reference potential. A potential lower than the reference potential is applied to the disk-shaped electrode, and a potential higher than the reference potential is applied to the control electrode.

公开(公告)号：US20200266032A1

公开(公告)日：2020-08-20

申请号：US16791308

申请日：2020-02-14

Applicant: Axcelis Technologies, Inc.

Inventor： James DeLuca ,  Andy Ray ,  Neil Demario ,  Rosario Mollica

IPC: H01J37/317 ,  H01J37/05

Abstract: An ion implantation has an ion source and a mass analyzer configured to form and mass analyze an ion beam. A bending element is positioned downstream of the mass analyzer, and respective first and second measurement apparatuses are positioned downstream and upstream of the bending element and configured to determine a respective first and second ion beam current of the ion beam. A workpiece scanning apparatus scans the workpiece through the ion beam. A controller is configured to determine an implant current of the ion beam at the workpiece and to control the workpiece scanning apparatus to control a scan velocity of the workpiece based on the implant current. The determination of the implant current of the ion beam is based, at least in part, on the first ion beam current and second ion beam current.

公开(公告)号：US20200249565A1

公开(公告)日：2020-08-06

申请号：US16564743

申请日：2019-09-09

Applicant: Exogenesis Corporation

Inventor： Sean R. Kirkpatrick ,  Allen R. Kirkpatrick

IPC: G03F1/80 ,  H05H3/02 ,  H01J37/317 ,  H01L21/02 ,  H01L21/265 ,  H01L21/311 ,  H01J37/05 ,  H01J37/147 ,  G03F1/82

Abstract: An apparatus, method and products thereof provide an accelerated neutral beam derived from an accelerated gas cluster ion beam for processing materials.

公开(公告)号：US10734189B2

公开(公告)日：2020-08-04

申请号：US16323418

申请日：2018-03-28

Applicant: CHENGDU BOE OPTOELECTRONICS TECHNOLOGY CO., LTD. ,  BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Hao Jing ,  Dongwoo Kang ,  Yongyi Fu ,  Chenliang Liu ,  Rujian Li ,  Kang Luo

IPC: H01J37/02 ,  H01J37/244 ,  H01J37/317 ,  H01J37/05

Abstract: The present disclosure relates to an ion implantation amount adjustment device that includes: an adjuster configured to turn on or off an ion outlet of the ion implantation apparatus; and an actuator configured to control movement of the adjuster to adjust an opening degree of the ion outlet.

公开(公告)号：US20200161077A1

公开(公告)日：2020-05-21

申请号：US16197251

申请日：2018-11-20

Applicant: APPLIED Materials, Inc.

Inventor： Alexandre Likhanskii ,  Frank Sinclair ,  Shengwu Chang ,  Eric D. Hermanson ,  Nevin H. Clay

IPC: H01J37/05 ,  H01J37/12 ,  H01J37/08 ,  H01J37/317 ,  H01J37/147

Abstract: An apparatus may include a main chamber, an entrance tunnel, having an entrance axis extending into the main chamber, and an exit tunnel, connected to the main chamber and defining an exit axis, wherein the entrance tunnel and the exit tunnel define a beam bend of less than 25 degrees therebetween. The apparatus may include an electrode assembly, disposed in the main chamber, on a lower side of the exit tunnel; and a catch assembly, disposed within the main chamber, in a line of sight from an exterior aperture of the exit tunnel.

公开(公告)号：US20200043698A1

公开(公告)日：2020-02-06

申请号：US16525792

申请日：2019-07-30

Applicant: NuFlare Technology, Inc. ,  NuFlare Technology America, Inc.

Inventor： John HARTLEY

IPC: H01J37/22 ,  G06T7/00 ,  H01L21/67 ,  H01J37/09 ,  H01J37/141 ,  H01J37/05 ,  H01J37/244 ,  H01J37/04 ,  G01N21/95 ,  G01N21/956

Abstract: An electron optical system includes an electromagnetic lens configured to include a yoke, and refract an electron beam passing through the yoke by generating a magnetic field, and a shield coil disposed along the inner wall of the yoke, and configured to reduce a leakage magnetic field generated by the electromagnetic lens.