公开(公告)号：US08309937B2

公开(公告)日：2012-11-13

申请号：US12898351

申请日：2010-10-05

Applicant: Ikuya Kameyama

Inventor： Ikuya Kameyama

IPC: H01J37/147 ,  B23P17/04

CPC classification number: H01J37/147 ,  H01J37/09 ,  H01J2237/036 ,  H01J2237/0453 ,  Y10T29/49

Abstract: A grid assembly coupled to a discharge chamber of an ion beam source is configured for steering ion beamlets emitted from the discharge chamber at circularly asymmetrically determined steering angles. The grid assembly includes at least first and a second grid with a substantially circular pattern of holes, wherein each grid comprises holes positioned adjacent to one another. A plurality of the holes of the second grid is positioned with offsets relative to corresponding holes in the first grid. Due to the offsets in the holes in the second grid, ions passing through the offset holes are electrostatically attracted towards the closest circumferential portion of the downstream offset holes. Thus, the trajectories of ions passing through the offset holes are altered. The beamlet is steered by predetermined asymmetric angles. The predetermined steering angles are dependent upon the hole offsets, voltage applied to the grids, and the distance between the grids.

Abstract translation: 耦合到离子束源的放电室的电网组件被配置用于以圆形不对称地确定的转向角度控制从放电室发射的离子束。 栅格组件包括至少第一栅格和第二栅格，其具有基本圆形的孔图案，其中每个栅格包括彼此相邻定位的孔。 第二格栅的多个孔相对于第一格栅中的对应的孔定位成偏移。 由于第二栅格中的孔中的偏移，穿过偏移孔的离子被静电吸引到下游偏移孔的最近的周向部分。 因此，通过偏移孔的离子的轨迹被改变。 小梁通过预定的不对称角度转向。 预定的转向角取决于孔偏移，施加到网格的电压以及网格之间的距离。

公开(公告)号：US08298432B2

公开(公告)日：2012-10-30

申请号：US11864489

申请日：2007-09-28

Applicant: Ruairidh MacCrimmon ,  Nicolaus J. Hofmeester ,  Steven P. Caliendo

Inventor： Ruairidh MacCrimmon ,  Nicolaus J. Hofmeester ,  Steven P. Caliendo

IPC: G01L21/30

CPC classification number: C23C14/545 ,  C23C14/221 ,  C23C16/513 ,  C23C16/52 ,  H01J37/09 ,  H01J37/304 ,  H01J37/3056 ,  H01J2237/0453 ,  H01J2237/0455 ,  H01J2237/0812

Abstract: A method and system of location specific processing on a substrate is described. The method comprises establishing a gas cluster ion beam (GCIB) according to a set of beam properties and measuring metrology data for a substrate. Thereafter, the method comprises determining at least one spatial gradient of the metrology data at one or more locations on the substrate and adjusting at least one beam property in the set of beam properties for the GCIB according to the determined at least one spatial gradient. Using the metrology data and the adjusted set of beam properties, correction data for the substrate is computed. Following the computing, the adjusted GCIB is applied to the substrate according to the correction data.

Abstract translation: 描述了在衬底上的位置特定处理的方法和系统。 该方法包括根据一组光束特性建立气体簇离子束（GCIB），并测量衬底的测量数据。 此后，该方法包括在衬底上的一个或多个位置处确定测量数据的至少一个空间梯度，并根据确定的至少一个空间梯度调整GCIB的一组光束属性中的至少一个光束特性。 使用测量数据和调整的束特性组合，计算衬底的校正数据。 在计算之后，根据校正数据将调整后的GCIB应用于衬底。

公开(公告)号：US20120217391A1

公开(公告)日：2012-08-30

申请号：US13508040

申请日：2010-11-01

Applicant: Hiroyasu Shichi ,  Shinichi Matsubara ,  Noriaki Arai ,  Tohru Ishitani ,  Yoichi Ose ,  Yoshimi Kawanami

Inventor： Hiroyasu Shichi ,  Shinichi Matsubara ,  Noriaki Arai ,  Tohru Ishitani ,  Yoichi Ose ,  Yoshimi Kawanami

IPC: H01J37/28

CPC classification number: H01J37/08 ,  H01J27/26 ,  H01J37/09 ,  H01J37/28 ,  H01J2237/062 ,  H01J2237/0807

Abstract: The charged particle beam microscope is configured of: a gas field ionization ion source (1); a focusing lens (5) which accelerates and focuses ions that have been discharged from the ion source; a movable first aperture (6) which limits the ion beam that has passed through the focusing lens; a first deflector (35) which scans or aligns the ion beam that has passed through the first aperture; a second deflector (7) which deflects the ion beam that has passed through the first aperture; a second aperture (36) which limits the ion beam that has passed through the first aperture; an objective lens (8) which focuses, on a sample, the ion beam that has passed through the first aperture; and a means for measuring the signal, which is substantially proportional to the current of the ion beam that has passed through the second aperture.

Abstract translation: 带电粒子束显微镜由气体离子源（1）构成; 聚焦透镜（5），其加速并聚焦已经从离子源放出的离子; 限制已经通过聚焦透镜的离子束的可移动的第一孔（6）; 第一偏转器（35），其扫描或对准已经穿过第一孔的离子束; 第二偏转器（7），其使已经穿过第一孔的离子束偏转; 限制已经通过第一孔的离子束的第二孔（36）; 物镜（8），其在样品上聚焦已经穿过第一孔的离子束; 以及用于测量与已经通过第二孔的离子束的电流基本成比例的信号的装置。

公开(公告)号：US08253100B2

公开(公告)日：2012-08-28

申请号：US12818509

申请日：2010-06-18

Applicant: Shigemasa Ohta

Inventor： Shigemasa Ohta

IPC: H01J37/26 ,  H01J37/00

CPC classification number: H01J37/265 ,  H01J37/09 ,  H01J37/18 ,  H01J2237/182 ,  H01J2237/188 ,  H01J2237/206 ,  H01J2237/2605

Abstract: An electron microscope has an electron beam source generating an accelerated electron beam, electromagnetic lenses for converging the electron beam, alignment coils for adjusting the optical axis of the beam transmitted through the lenses, a control unit for controlling the ambient around a specimen, at least one vacuum pump mounted in a given location of the electron optical column, a gas inlet device mounted near the specimen, an imager for creating an image based on a signal arising from the region of the specimen illuminated with the beam, an image output device for recording and displaying the image, and a computer for controlling these components. The computer finds the orifices to be used and diameters of orifices at which the pressure is maintained without electrical discharge in an electron beam source from the selected gas species and the pressure around the specimen.

Abstract translation: 电子显微镜具有产生加速电子束的电子束源，用于会聚电子束的电磁透镜，用于调整透过透镜的光束的光轴的取向线圈，用于控制样本周围环境的控制单元，至少 安装在电子光学柱的给定位置的一个真空泵，安装在样品附近的气体入口装置，用于基于从用该光束照射的样本的区域产生的信号产生图像的成像器;图像输出装置， 记录和显示图像，以及用于控制这些组件的计算机。 计算机发现要使用的孔和在选定气体种类的电子束源中保持压力而没有放电的孔的直径以及样品周围的压力。

公开(公告)号：US20120196428A1

公开(公告)日：2012-08-02

申请号：US13053624

申请日：2011-03-22

Applicant: Hirofumi ASAI ,  Yoshikazu HASHINO

Inventor： Hirofumi ASAI ,  Yoshikazu HASHINO

IPC: H01L21/265 ,  G21K5/10

CPC classification number: H01L21/265 ,  H01J37/09 ,  H01J37/3171 ,  H01J2237/31711

Abstract: In an ion implantation method, ion implantation into a substrate is performed while changing a relative positional relation between an ion beam and the substrate. A first ion implantation process in which a uniform dose amount distribution is formed within the substrate and a second ion implantation process in which a non-uniform dose amount distribution is formed within the substrate are performed in a predetermined order. Moreover, a cross-sectional size of an ion beam irradiated on the substrate during the second ion implantation process is set smaller than a cross-sectional size of an ion beam irradiated on the substrate during the first ion implantation process.

Abstract translation: 在离子注入方法中，在改变离子束和衬底之间的相对位置关系的同时进行离子注入衬底。 在基板内形成均匀剂量分布的第一离子注入工艺和在基板内形成不均匀剂量分布的第二离子注入工艺以预定顺序进行。 此外，在第二离子注入工艺期间照射在衬底上的离子束的横截面尺寸设定为小于在第一离子注入工艺期间照射在衬底上的离子束的横截面尺寸。

公开(公告)号：US08217350B2

公开(公告)日：2012-07-10

申请号：US12448229

申请日：2007-11-23

Applicant: Dirk Preikszas

Inventor： Dirk Preikszas

IPC: H01J37/26 ,  H01J37/00

CPC classification number: H01J37/09 ,  H01J37/145 ,  H01J37/3056 ,  H01J2237/31745 ,  H01J2237/31749

Abstract: A particle optical arrangement providing an electron microscopy system 3 and an ion beam processing system 7 comprises an objective lens 43 of the electron microscopy system having an annular electrode 59 being a component of the electron microscopy system arranged closest to a position 11 of an object to be examined. Between the annular electrode and a principal axis 9 of the ion beam processing system 7 a shielding electrode 81 is arranged.

Abstract translation: 提供电子显微镜系统3和离子束处理系统7的粒子光学装置包括电子显微镜系统的物镜43，其具有环形电极59，该环形电极是最靠近物体的位置11布置的电子显微镜系统的部件， 被检查。 在环形电极和离子束处理系统7的主轴9之间设置有屏蔽电极81。

公开(公告)号：US08196067B2

公开(公告)日：2012-06-05

申请号：US12583319

申请日：2009-08-18

Applicant: Akio Yamada ,  Takayuki Yabe ,  Hitoshi Tanaka

Inventor： Akio Yamada ,  Takayuki Yabe ,  Hitoshi Tanaka

IPC: G06F17/50

CPC classification number: H01J37/3177 ,  B82Y10/00 ,  B82Y40/00 ,  G03F1/20 ,  H01J37/09 ,  H01J2237/31776 ,  H01J2237/31794

Abstract: A mask for exposure, which is used in a multi-column electron beam exposure apparatus having multiple column cells, includes a stencil pattern group constituted by multiple stencil patterns for each of the multiple column cells. The stencil pattern groups are arranged at intervals corresponding to arrangement intervals of the multiple column cells, and all of the stencil pattern groups are formed on a single mask substrate. The stencil pattern groups include: a first stencil pattern group formed within a deflectable range of an electron beam of each of the multiple column cells; and a second stencil pattern group having two or more of the first stencil patterns.

Abstract translation: 用于具有多个列单元的多列电子束曝光装置中的用于曝光的掩模包括由多个列单元中的每一个的多个模板图案构成的模板图案组。 模板图案组以对应于多列单元格的排列间隔的间隔排列，并且所有模板图案组形成在单个掩模基板上。 模板图案组包括：形成在多个柱单元中的每一个的电子束的可偏转范围内的第一模板图案组; 以及具有两个或更多个第一模板图案的第二模板图案组。

公开(公告)号：US20120126146A1

公开(公告)日：2012-05-24

申请号：US13386980

申请日：2010-07-14

Applicant: Asako Kaneko ,  Hirobumi Muto ,  Atsushi Kamino

Inventor： Asako Kaneko ,  Hirobumi Muto ,  Atsushi Kamino

IPC: G21K5/00 ,  G21F3/00

CPC classification number: H01J37/09 ,  G01N1/286 ,  H01J37/20 ,  H01J37/305 ,  H01J37/31

Abstract: Disclosed is a shield (8, 10) disposed between an ion source (1) of an ion milling device and a sample (7) so as to be in contact with the sample. The shield is characterized by having a circular shape having an opening at the center, and by being capable of rotating about an axis (11) extending through the opening. Further, a groove is provided in the ion source-side surface of an end portion of the shield, and an inclined surface is provided on an end portion of the shield. Thus, an ion milling device having a shield, wherein the maximum number of machining operations can be increased, and the position of the shield can be accurately adjusted.

Abstract translation: 公开了设置在离子铣削装置的离子源（1）和样品（7）之间以与样品接触的屏蔽（8,10）。 该屏蔽的特征在于具有在中心具有开口的圆形形状，并且能够绕延伸穿过开口的轴线（11）旋转。 此外，在屏蔽的端部的离子源侧表面设置有槽，并且在屏蔽的端部设置有倾斜面。 因此，具有屏蔽件的离子铣削装置，其中可以增加最大数量的加工操作，并且可以精确地调节护罩的位置。

公开(公告)号：US20120091359A1

公开(公告)日：2012-04-19

申请号：US12910240

申请日：2010-10-22

Applicant: Stefan LANIO ,  Jürgen FROSIEN

Inventor： Stefan LANIO ,  Jürgen FROSIEN

IPC: H01J3/14

CPC classification number: H01J37/063 ,  H01J37/06 ,  H01J37/08 ,  H01J37/09 ,  H01J37/16 ,  H01J2237/06375

Abstract: An emitter assembly for emitting a charged particle beam along an optical axis is described. The emitter assembly being housed in a gun chamber and includes an emitter having an emitter tip, wherein the emitter tip is positioned at a first plane perpendicular to the optical axis and wherein the emitter is configured to be biased to a first potential, an extractor having an opening, wherein the opening is positioned at a second plane perpendicular to the optical axis and wherein the extractor is configured to be biased to a second potential, wherein the second plane has a first distance from the first plane of 2.25 mm and above.

Abstract translation: 描述了用于沿光轴发射带电粒子束的发射器组件。 发射器组件被容纳在枪室中并且包括具有发射极尖端的发射器，其中发射极尖端位于垂直于光轴的第一平面处，并且其中发射器被配置为偏置到第一电位，提取器具有 开口，其中所述开口定位在垂直于所述光轴的第二平面处，并且其中所述提取器构造成被偏置到第二电位，其中所述第二平面具有距离所述第一平面2.25mm及以上的第一距离。

公开(公告)号：US20110315876A1

公开(公告)日：2011-12-29

申请号：US13168415

申请日：2011-06-24

Applicant: Bart Buijsse ,  Peter Christiaan Tiemeijer

Inventor： Bart Buijsse ,  Peter Christiaan Tiemeijer

IPC: H01J37/295

CPC classification number: H01J37/263 ,  H01J37/09 ,  H01J2237/043 ,  H01J2237/223 ,  H01J2237/2614 ,  H01J2237/2802

Abstract: The invention relates to a blocking member to be placed in the diffraction plane of a TEM. It resembles the knife edge used for single sideband imaging, but blocks only electrons deflected over a small angle. As a result the Contrast Transfer Function of the TEM according to this invention will equal that of a single sideband microscope at low frequencies and that of a normal microscope for high frequencies. Preferable the highest frequency blocked by the blocking member is such that a microscope without the blocking member would show a CTF of 0.5.

Abstract translation: 本发明涉及一种放置在TEM衍射平面中的阻挡构件。 它类似于用于单边带成像的刀刃，但仅阻挡在小角度偏转的电子。 结果，根据本发明的TEM的对比度传递函数将等于低频下的单边带显微镜的对比度传递函数，而与正常显微镜在低频下相同。 优选地，阻挡构件阻挡的最高频率使得没有阻挡构件的显微镜将显示为0.5的CTF。