Abstract:
An ion beam apparatus and a method for providing an energy-filtered primary ion beam are described. Therein, a primary ion beam having an asymmetric first energy distribution is generated by means of an ion source. The primary ion beam is energy filtered using, for example, a retarding lens.
Abstract:
An apparatus, method and products thereof provide an accelerated neutral beam derived from an accelerated gas cluster ion beam for processing materials.
Abstract:
There is proposed an apparatus for doping a material to be doped by generating plasma (ions) and accelerating it by a high voltage to form an ion current is proposed, which is particularly suitable for processing a substrate having a large area. The ion current is formed to have a linear sectional configuration, and doping is performed by moving a material to be doped in a direction substantially perpendicular to the longitudinal direction of a section of the ion current.
Abstract:
A particle optical apparatus has a particle source for generating at least one beam of charged particles, and a magnet arrangement having two pole plates, which are arranged spaced apart from one another, such that the at least one beam of charged particles in operation passes through the pole plates, wherein trenches are provided in the pole plates, in which trenches coil wires are arranged. The trenches, when viewed in a cross section transverse to an extension direction of the trenches, have a smaller width in a region of a surface of the pole plates, than in a region arranged at a distance from the surface.
Abstract:
An ion beam device is described. The ion beam device includes an ion beam source for generating an ion beam, the ion beam being emitted along a first axis, an aperture unit adapted to shape the ion beam, and an achromatic deflection unit adapted to deflect ions of the ion beam having a predetermined mass by a deflecting angle. The achromatic deflection unit includes: an electric field generating component for generating an electric field, and a magnetic field generating component for generating a magnetic field substantially perpendicular to the electric field. The device further includes a mass separation aperture adapted for blocking ions with a mass different from the predetermined mass and for allowing ions having the predetermined mass to trespass the mass separator, and an objective lens having a second optical axis, wherein the second optical axis is inclined with regard to the first axis.
Abstract:
An ion implantation apparatus of high energy is disclosed in this invention. The new and improved system can have a wide range of ion beam energy at high beam transmission rates and flexible operation modes for different ion species. This high energy implantation system can be converted into a medium current by removing RF linear ion acceleration unit.
Abstract:
In a spectral image formed by two orthogonal axes, one of which is an axis of the amount of energy loss and the other of which is an axis of positional information, by the use of an electron spectrometer and a transmission electron microscope, distortion in the spectral image of a sample to be analyzed is corrected with high efficiency and high accuracy by comparing electron beam positions calculated from a two-dimensional electron beam position image formed by the two orthogonal axes (the axis of the amount of energy loss and the axis of positional information) with reference electron beam positions, and calculating amounts of the distortion based on the differences of the electron beam positions. Method and apparatus are offered which correct distortion in a spectral image with high efficiency and high accuracy, the image being formed by the two orthogonal axes (the axis of the amount of energy loss and the axis of positional information).
Abstract:
A lens adjustment method and a lens adjustment system which adjust a plurality of multi-pole lenses of an electron spectrometer attached to a transmission electron microscope, optimum conditions of the multi-pole lenses are determined through simulation based on a parameter design method using exciting currents of the multi-pole lenses as parameters.
Abstract:
A plasma deposition apparatus includes a waveguide conduit having a plurality of slots therein. The waveguide conduit is coupled to a microwave source for transmitting microwaves from the microwave source through the plurality of slots. One or more pipes have an outlet end positioned at each of the plurality of slots for transporting material from one or more material sources to the plurality of slots. The apparatus also includes a plasma chamber in communication with the waveguide tube through the plurality of slots. The plasma chamber receives through said plurality of slots microwaves from the waveguide tube and material to be melted or evaporated from the one or more pipes. The plasma chamber includes a plurality of magnets disposed in an outer wall of the plasma chamber for forming a magnetic field in the plasma chamber. The plasma chamber further includes one or more outlet openings for discharging plasma containing material to be deposited on a substrate.
Abstract:
A multipurpose ion implanter beam line configuration comprising a mass analyzer magnet followed by a magnetic scanner and magnetic collimator combination that introduce bends to the beam path, the beam line constructed for enabling implantation of common monatomic dopant ion species cluster ions, the beam line configuration having a mass analyzer magnet defining a pole gap of substantial width between ferromagnetic poles of the magnet and a mass selection aperture, the analyzer magnet sized to accept an ion beam from a slot-form ion source extraction aperture of at least about 80 mm height and at least about 7 mm width, and to produce dispersion at the mass selection aperture in a plane corresponding to the width of the beam, the mass selection aperture capable of being set to a mass-selection width sized to select a beam of the cluster ions of the same dopant species but incrementally differing molecular weights, the mass selection aperture also capable of being set to a substantially narrower mass-selection width and the analyzer magnet having a resolution at the mass selection aperture sufficient to enable selection of a beam of monatomic dopant ions of substantially a single atomic or molecular weight, the magnetic scanner and magnetic collimator being constructed to successively bend the ion beam in the same sense, which is in the opposite sense to that of the bend introduced by the analyzer magnet of the beam line.