ULTRAFAST ELECTRON DIFFRACTION APPARATUS

    公开(公告)号:US20210193429A1

    公开(公告)日:2021-06-24

    申请号:US17126904

    申请日:2020-12-18

    IPC分类号: H01J37/14 H01J37/073

    摘要: There is provided an ultrafast electron diffraction apparatus including: a photoelectron gun configured to emit an electron beam; a bending portion for emitting the electron beam emitted from the photoelectron gun by changing a travel direction of the electron beam by a predetermined angle; and a sample portion including a sample to be analyzed by the electron beam emitted from the bending portion. The electron beam reaches the sample portion in a state that a pulse of the electron beam is compressed and the timing jitter between the pumping light and probe electron pulse is completely reduced as the travel direction of the electron beam is changed by the predetermined angle through the bending portion.

    ADJUSTMENT METHOD AND ELECTRON BEAM DEVICE

    公开(公告)号:US20210012997A1

    公开(公告)日:2021-01-14

    申请号:US16879151

    申请日:2020-05-20

    申请人: EBARA CORPORATION

    摘要: An adjustment method for adjusting a path of an electron beam passing through an electron beam device including at least one unit having at least one lens and at least one aligner electrode, and a detector configured to detect the electron beam, the method including: a step of measuring, by a coordinate measuring machine, an assembly tolerance for each of a plurality of the units constituting the electron beam device; a step of determining a shift amount of the electron beam at a position of the at least one of the lenses; a step of determining an electrode condition for each of a plurality of the aligner electrodes included in the units in a manner such that a shift amount of the electron beam is to be the determined shift amount; and a step of setting each of the aligner electrodes to the corresponding determined electrode condition.

    Methods and systems for plasma deposition and treatment

    公开(公告)号:US10861669B2

    公开(公告)日:2020-12-08

    申请号:US16665826

    申请日:2019-10-28

    摘要: An ion beam treatment or implantation system includes an ion source emitting a plurality of parallel ion beams having a given spacing. A first lens magnet having a non-uniform magnetic field receives the plurality of ion beams from the ion source and focuses the plurality of ion beams toward a common point. The system may optionally include a second lens magnet having a non-uniform magnetic field receiving the ion beams focused by the first lens magnet and redirecting the ion beams such that they have a parallel arrangement having a closer spacing than said given spacing in a direction toward a target substrate.

    Apparatus of plural charged-particle beams

    公开(公告)号:US10811222B2

    公开(公告)日:2020-10-20

    申请号:US16200421

    申请日:2018-11-26

    摘要: A secondary projection imaging system in a multi-beam apparatus is proposed, which makes the secondary electron detection with high collection efficiency and low cross-talk. The system employs one zoom lens, one projection lens and one anti-scanning deflection unit. The zoom lens and the projection lens respectively perform the zoom function and the anti-rotating function to remain the total imaging magnification and the total image rotation with respect to the landing energies and/or the currents of the plural primary beamlets. The anti-scanning deflection unit performs the anti-scanning function to eliminate the dynamic image displacement due to the deflection scanning of the plural primary beamlets.

    Charged particle beam system
    16.
    发明授权

    公开(公告)号:US10811215B2

    公开(公告)日:2020-10-20

    申请号:US16416447

    申请日:2019-05-20

    摘要: A charged particle beam system includes a charged particle source that generates a first charged particle beam and a multi beam generator that generates a plurality of charged particle beamlets from an incoming first charged particle beam. Each individual beamlet is spatially separated from other beamlets. The charged particle beam system also includes an objective lens that focuses incoming charged particle beamlets in a first plane so that a first region in which a first individual beamlet impinges in the first plane is spatially separated from a second region in which a second individual beamlet impinges in the first plane. The charged particle beam system also includes a projection system and a detector system including a plurality of individual detectors. The projection system images interaction products leaving the first region within the first plane due to impinging charged particles onto a first detector and images interaction products leaving the second region in the first plane onto a second detector.

    Laser induced plasma micromachining (LIPMM)

    公开(公告)号:US10692700B2

    公开(公告)日:2020-06-23

    申请号:US15244172

    申请日:2016-08-23

    摘要: A system for laser-induced plasma micromachining of a work-piece includes a dielectric fluid, a dielectric fluid supply device, a laser, a processor, and a memory. The dielectric fluid supply device is arranged to hold a work-piece in the dielectric fluid or to direct the dielectric fluid onto the work-piece. The laser is arranged to emit a pulsed laser-beam. The processor is in electronic communication with the laser. The memory is in electronic communication with the processor. The memory includes programming code for execution by the processor. The programming code is programmed to direct the laser to deliver the pulsed laser-beam into the dielectric fluid to create a plasma generated at a focal point of the pulsed laser-beam in the dielectric fluid to micromachine, using the plasma, the work-piece disposed adjacent to the focal point.

    Post column filter with enhanced energy range

    公开(公告)号:US10431420B2

    公开(公告)日:2019-10-01

    申请号:US15971896

    申请日:2018-05-04

    申请人: FEI Company

    摘要: A method of operating a Post Column Filter (PCF) in a Scanning/Transmission Electron Microscope, and a Post Column Filter configured to operate according to the method. In an embodiment, the method includes receiving, at an entrance plane, an incoming beam of electrons; dispersing, by an energy dispersive element, the incoming beam of electrons into an energy dispersed beam of electrons; disposing a first plurality of quadrupoles between the entrance plane and a slit plane; operating the PCF in an EELS mode; and operating the PCF in an EFTEM mode. Operating the PCF in an EELS mode includes exciting one or more quadrupoles of the first plurality of quadrupoles at a first excitation level, wherein the first excitation level does not enlarge the energy dispersion of the energy dispersed beam of electrons; and forming an image of the energy dispersed beam of electrons on the image plane, the image being an EELS spectrum. Operating the PCF in the EFTEM mode includes including a slit at the slit plane in an optical path; exciting one or more quadrupoles of the first plurality of quadrupoles at a second excitation level, the second excitation level different from the first excitation level; forming an energy dispersed focus of the energy dispersed beam of electrons on the slit at the slit plane; and enlarging the energy dispersion of the energy dispersed beam of electrons caused by the energy dispersive element based on the one or more first plurality quadrupoles excited at the second excitation level.

    CHARGED PARTICLE BEAM APPARATUS
    19.
    发明申请

    公开(公告)号:US20190066969A1

    公开(公告)日:2019-02-28

    申请号:US16115103

    申请日:2018-08-28

    摘要: There is provided a charged particle beam apparatus including: a charged particle source; a condenser lens and an object lens for converging a charged particle beam from the charged particle source and irradiating the converged charged particle beam to a specimen; and plural image shift deflectors for deflecting the charged particle beam. In the charged particle beam apparatus, the deflection of the charged particle beam is controlled using first control parameters that set the optical axis of a charged particle beam to a first optical axis that passes through the center of the object lens and enters a predefined position of the specimen, and second control parameters that transform the first control parameters so that the first control parameters set the optical axis of the charged particle beam to a second optical axis having a predefined incident angle different from the incident angle of the first optical axis.