公开(公告)号：US20180261427A1

公开(公告)日：2018-09-13

申请号：US15914513

申请日：2018-03-07

Applicant: Hitachi, Ltd.

Inventor： Keiji WATANABE ,  Hiroyasu SHICHI ,  Daisuke RYUZAKI

IPC: H01J37/317 ,  H01J37/04

CPC classification number: H01J37/317 ,  H01J37/045 ,  H01J37/30 ,  H01J2237/006 ,  H01J2237/30472 ,  H01J2237/31713

Abstract: The present invention provides a technology for avoiding radiation of an ion beam at a position other than a desired processing position. A microstructure manufacturing method includes a step of radiating an ion beam to a sample; a step of supplying a gas to the sample; a step of stopping supplying the gas to the sample; and a step of stopping radiating the ion beam to the sample. The step of radiating the ion beam is performed earlier than the step of supplying the gas or the step of stopping supplying the gas is performed earlier than the step of stopping radiating the ion beam.

公开(公告)号：US10043635B2

公开(公告)日：2018-08-07

申请号：US15320104

申请日：2014-09-25

Applicant: Mitsubishi Electric Corporation

Inventor： Sunao Aya

IPC: H01J37/317 ,  H01J37/18 ,  H01J37/08

CPC classification number: H01J37/3171 ,  H01J27/08 ,  H01J37/08 ,  H01J37/18 ,  H01J2237/006 ,  H01J2237/08

Abstract: A vacuum is maintained inside a vacuum partition (1). The whole of the solid packed container (3) is disposed inside the vacuum partition (1). A heater (7) sublimates the aluminum chloride (8) packed in the solid packed container (3) to generate an aluminum chloride gas (9). An arc chamber (6) ionizes the aluminum chloride gas (9) and emits an ion beam (11) of the ionized aluminum chloride gas (9). A gas supply nozzle (10) leads the aluminum chloride gas (9) from the solid packed container (3) into the arc chamber (6). A supporting part (4) supports and fixes the solid packed container (3) on the vacuum partition (1). A thermal conductivity of the supporting part (4) is lower than thermal conductivities of the vacuum partition (1) and the solid packed container (3).

公开(公告)号：US20180211807A1

公开(公告)日：2018-07-26

申请号：US15874798

申请日：2018-01-18

Applicant: FEI Company

Inventor： Gregory A. Schwind ,  Aurelien Philippe Jean Maclou Botman ,  Sean Kellogg ,  Leon van Kouwen ,  Luigi Mele

IPC: H01J27/20 ,  H01J37/08 ,  H01J37/26

CPC classification number: H01J27/20 ,  H01J27/205 ,  H01J37/08 ,  H01J37/26 ,  H01J2237/006 ,  H01J2237/061 ,  H01J2237/082

Abstract: A collision ionization source is disclosed herein. An example source includes an ionization region arranged to receive a gas and a charged particle beam, the charged particle beam to ionize at least some of the gas, and a supply duct arranged to provide the gas to the ionization region, the supply duct having a non-uniform height decreasing from an input orifice to an output orifice, the output orifice arranged adjacent to the ionization region.

公开(公告)号：US20180068830A1

公开(公告)日：2018-03-08

申请号：US15809252

申请日：2017-11-10

Applicant: Varian Semiconductor Equipment Associates, Inc.

Inventor： Bon-Woong Koo ,  Vikram M. Bhosle ,  John A. Frontiero ,  Nicholas P.T. Bateman ,  Timothy J. Miller ,  Svetlana B. Radovanov ,  Min-Sung Jeon ,  Peter F. Kurunczi ,  Christopher J. Leavitt

IPC: H01J37/317 ,  C23C16/513 ,  H01J37/08 ,  C23C14/48

CPC classification number: H01J37/3171 ,  C23C14/48 ,  C23C16/513 ,  H01J37/08 ,  H01J2237/006 ,  H01J2237/0822

Abstract: An apparatus and methods of improving the ion beam quality of a halogen-based source gas are disclosed. Unexpectedly, the introduction of a noble gas, such as argon, to an ion source chamber may increase the percentage of desirable ion species, while decreasing the amount of contaminants and halogen-containing ions. This is especially beneficial in non-mass analyzed implanters, where all ions are implanted into the workpiece. In one embodiment, a first source gas, comprising a dopant and a halogen is introduced into an ion source chamber, a second source gas comprising a hydride, and a third source gas comprising a noble gas are also introduced. The combination of these three source gases produces an ion beam having a higher percentage of pure dopant ions than would occur if the third source gas were not used.

公开(公告)号：US09887067B2

公开(公告)日：2018-02-06

申请号：US14692159

申请日：2015-04-21

Applicant: Varian Semiconductor Equipment Associates, Inc.

Inventor： Bon-Woong Koo ,  Vikram M. Bhosle ,  John A. Frontiero

IPC: C23C18/48 ,  H01J37/317 ,  H01J37/08 ,  C23C16/513 ,  C23C14/48

CPC classification number: H01J37/3171 ,  C23C14/48 ,  C23C16/513 ,  H01J37/08 ,  H01J2237/006 ,  H01J2237/0822

Abstract: An apparatus and methods of improving the ion beam quality of a halogen-based source gas are disclosed. Unexpectedly, the introduction of a noble gas, such as argon or neon, to an ion source chamber may increase the percentage of desirable ion species, while decreasing the amount of contaminants and halogen-containing ions. This is especially beneficial in non-mass analyzed implanters, where all ions are implanted into the workpiece. In one embodiment, a first source gas, comprising a processing species and a halogen is introduced into a ion source chamber, a second source gas comprising a hydride, and a third source gas comprising a noble gas are also introduced. The combination of these three source gases produces an ion beam having a higher percentage of pure processing species ions than would occur if the third source gas were not used.

公开(公告)号：US09805912B2

公开(公告)日：2017-10-31

申请号：US12948369

申请日：2010-11-17

Applicant: Neil K. Colvin ,  Tseh-Jen Hsieh

Inventor： Neil K. Colvin ,  Tseh-Jen Hsieh

IPC: H01J37/317 ,  H01J47/08 ,  H01J27/02 ,  H01J37/08

CPC classification number: H01J37/3171 ,  H01J27/022 ,  H01J37/08 ,  H01J2237/006 ,  H01J2237/08

Abstract: A system, apparatus and method for increasing ion source lifetime in an ion implanter are provided. Oxidation of the ion source and ion source chamber poisoning resulting from a carbon and oxygen-containing source gas is controlled by utilizing a hydrogen co-gas, which reacts with free oxygen atoms to form hydroxide and water.

公开(公告)号：US09799490B2

公开(公告)日：2017-10-24

申请号：US14674558

申请日：2015-03-31

Applicant: FEI Company

Inventor： Aiden Martin ,  Geoff McCredie ,  Milos Toth

IPC: A61N5/00 ,  H01J37/32 ,  H01J37/18 ,  H01J37/305 ,  H01J37/317 ,  H01J37/30

CPC classification number: H01J37/32 ,  H01J37/18 ,  H01J37/3002 ,  H01J37/3056 ,  H01J37/3178 ,  H01J2237/002 ,  H01J2237/006 ,  H01J2237/022 ,  H01J2237/2003 ,  H01J2237/24445 ,  H01J2237/30472 ,  H01J2237/317

Abstract: A cold trap is provided to reduce contamination gases that react with the beam during operations that use a process gas. The cold trap is set to a temperature that condenses the contamination gas but does not condense the process gas. Cold traps may be used in the sample chamber and in the gas line.

公开(公告)号：US20170294314A1

公开(公告)日：2017-10-12

申请号：US15483448

申请日：2017-04-10

Applicant: Aaron Reinicker ,  Ashwini K. Sinha

Inventor： Aaron Reinicker ,  Ashwini K. Sinha

IPC: H01L21/265 ,  C23C14/48

CPC classification number: H01L21/265 ,  C23C14/48 ,  H01J37/08 ,  H01J37/3171 ,  H01J2237/006 ,  H01J2237/31701

Abstract: The present invention relates to an improved composition for ion implantation. A dopant source comprising GeF4 and an assistant species comprising CH3F is provided, wherein the assistant species in combination with the dopant gas can produces a Ge-containing ion beam current. The criteria for selecting the assistant species is based on the combination of the following properties: ionization energy, total ionization cross sections, bond dissociation energy to ionization energy ratio, and a certain composition.

公开(公告)号：US09773634B2

公开(公告)日：2017-09-26

申请号：US15416686

申请日：2017-01-26

Applicant: Hitachi High-Tech Science Corporation

Inventor： Tomokazu Kozakai ,  Osamu Matsuda ,  Yasuhiko Sugiyama ,  Kazuo Aita ,  Fumio Aramaki ,  Anto Yasaka ,  Hiroshi Oba

IPC: H01J37/304 ,  G01Q60/10 ,  H01J37/08 ,  H01J1/304 ,  H01J37/073 ,  H01J37/21 ,  H01J37/28 ,  G01Q60/16 ,  G01Q70/08 ,  H01J37/30

CPC classification number: H01J1/3044 ,  G01Q60/10 ,  G01Q60/16 ,  G01Q60/24 ,  G01Q70/08 ,  G01Q70/16 ,  H01J1/3048 ,  H01J37/073 ,  H01J37/08 ,  H01J37/21 ,  H01J37/28 ,  H01J37/3002 ,  H01J2201/30415 ,  H01J2201/30496 ,  H01J2237/002 ,  H01J2237/006

Abstract: There is provided an iridium tip including a pyramid structure having one {100} crystal plane as one of a plurality of pyramid surfaces in a sharpened apex portion of a single crystal with orientation. The iridium tip is applied to a gas field ion source or an electron source. The gas field ion source and/or the electron source is applied to a focused ion beam apparatus, an electron microscope, an electron beam applied analysis apparatus, an ion-electron multi-beam apparatus, a scanning probe microscope or a mask repair apparatus.

公开(公告)号：US09761407B2

公开(公告)日：2017-09-12

申请号：US15021350

申请日：2014-10-08

Applicant: Hitachi High-Technologies Corporation

Inventor： Hiroyuki Muto ,  Yoshimi Kawanami ,  Hiroyasu Shichi ,  Shinichi Matsubara

IPC: H01J37/26 ,  H01J1/304 ,  H01J37/08 ,  B23K9/00 ,  H01J27/26 ,  H01J37/147 ,  H01J37/18 ,  H01J37/285 ,  H01J37/30

CPC classification number: H01J37/08 ,  H01J27/26 ,  H01J37/1474 ,  H01J37/18 ,  H01J37/285 ,  H01J37/3005 ,  H01J2237/002 ,  H01J2237/006 ,  H01J2237/0807 ,  H01J2237/28

Abstract: The objective of the present invention is to provide an ion beam device capable of forming a nanopyramid stably having one atom at the front end of an emitter tip even when the cooling temperature is lowered in order to observe a sample with a high signal-to-noise ratio. In the present invention, the ion beam device, wherein an ion beam generated from an electric field-ionized gas ion source is irradiated onto the sample to observe or process the sample, holds the temperature of the emitter tip at a second temperature higher than a first temperature for generating the ion beam and lower than room temperature, sets the extraction voltage to a second voltage higher than the first voltage used when generating the ion beam, and causes field evaporation of atoms at the front end of the emitter tip, when forming the nanopyramid having one atom at the front end of the emitter tip.