公开(公告)号：US11320395B2

公开(公告)日：2022-05-03

申请号：US16900989

申请日：2020-06-14

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ching-Hui Lin ,  Chun-Ren Cheng ,  Jui-Cheng Huang ,  Shih-Fen Huang ,  Tung-Tsun Chen ,  Yu-Jie Huang ,  Fu-Chun Huang

IPC: G01N27/414 ,  H01L23/31 ,  H01L23/522 ,  H01L23/64 ,  H01L29/786 ,  H01L21/8234 ,  H01L23/29

Abstract: An integrated circuit device includes a device layer, an interconnect structure, a conductive layer, a passivation layer and a bioFET. The device layer has a first side and a second side and include source/drain regions and a channel region between the source/drain regions. The interconnect structure is disposed at the first side of the device layer. The conductive layer is disposed at the second side of the device layer. The passivation layer is continuously disposed on the conductive layer and the channel region and exposes a portion of the conductive layer. The bioFET includes the source/drain regions, the channel region and a portion of the passivation layer on the channel region.

公开(公告)号：US20210389273A1

公开(公告)日：2021-12-16

申请号：US16900989

申请日：2020-06-14

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ching-Hui Lin ,  Chun-Ren Cheng ,  Jui-Cheng Huang ,  Shih-Fen Huang ,  Tung-Tsun Chen ,  Yu-Jie Huang ,  Fu-Chun Huang

IPC: G01N27/414 ,  H01L23/31 ,  H01L23/522 ,  H01L23/29 ,  H01L23/64 ,  H01L29/786 ,  H01L21/8234

Abstract: An integrated circuit device includes a device layer, an interconnect structure, a conductive layer, a passivation layer and a bioFET. The device layer has a first side and a second side and include source/drain regions and a channel region between the source/drain regions. The interconnect structure is disposed at the first side of the device layer. The conductive layer is disposed at the second side of the device layer. The passivation layer is continuously disposed on the conductive layer and the channel region and exposes a portion of the conductive layer. The bioFET includes the source/drain regions, the channel region and a portion of the passivation layer on the channel region.

公开(公告)号：US20210109059A1

公开(公告)日：2021-04-15

申请号：US17107420

申请日：2020-11-30

Applicant: Taiwan Semiconductor manufacturing Co., Ltd.

Inventor： Tung-Tsun CHEN ,  Jui-Cheng Huang ,  Kun-Lung Chen ,  Cheng-Hsiang Hsieh

IPC: G01N27/414 ,  H01L27/12

Abstract: An on-chip heater in a concentric rings configuration having non-uniform spacing between heating elements provides improved radial temperature uniformity and low power consumption compared to circular or square heating elements. On-chip heaters are suitable for integration and use with on-chip sensors that require tight temperature control.

公开(公告)号：US10852271B2

公开(公告)日：2020-12-01

申请号：US15378794

申请日：2016-12-14

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Tung-Tsun Chen ,  Jui-Cheng Huang ,  Kun-Lung Chen ,  Cheng-Hsiang Hsieh

IPC: G01N27/414 ,  H01L27/12

Abstract: An on-chip heater in a concentric rings configuration having non-uniform spacing between heating elements provides improved radial temperature uniformity and low power consumption compared to circular or square heating elements. On-chip heaters are suitable for integration and use with on-chip sensors that require tight temperature control.

公开(公告)号：US10739295B2

公开(公告)日：2020-08-11

申请号：US15725776

申请日：2017-10-05

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chin-Hua Wen ,  Jui-Cheng Huang

IPC: G01N27/30 ,  G01N27/414 ,  C12Q1/6825 ,  G01N33/543 ,  B01L3/02 ,  B01L3/00

Abstract: An apparatus including an integrated reference electrode and a fluid dispenser is described. The reference electrode includes a body and a tip. The fluid dispenser at least partially surrounds the tip of the reference electrode and includes an inlet, a chamber, and an outlet. The fluid dispenser is configured to receive a fluid sample from the inlet to the chamber and form a droplet of the fluid sample through the outlet so that the droplet is in fluidic contact with the tip of the reference electrode and associated with a known potential determined by the reference electrode.

公开(公告)号：US10161901B2

公开(公告)日：2018-12-25

申请号：US14961588

申请日：2015-12-07

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Yu-Jie Huang ,  Jui-Cheng Huang ,  Cheng-Hsiang Hsieh

IPC: G01N27/414

Abstract: A biologically sensitive field effect transistor includes a substrate, a first control gate and a second control gate. The substrate has a first side and a second side opposite to the first side, a source region and a drain region. The first control gate is disposed on the first side of the substrate. The second control gate is disposed on the second side of the substrate. The second control gate includes a sensing film disposed on the second side of the substrate. A voltage biasing between the source region and the second control gate is smaller than a threshold voltage of the second control gate.

公开(公告)号：US20140097902A1

公开(公告)日：2014-04-10

申请号：US13647468

申请日：2012-10-09

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Tung-Tsun Chen ,  Jui-Cheng Huang

IPC: H03G3/00

CPC classification number: H03B5/30 ,  H03F2200/36 ,  H03G3/3036

Abstract: An amplifier and oscillator system includes a MEMS resonator and a two stage amplifier topology. The MEMS resonator is configured to generate a resonator signal. The two-stage amplifier topology is configured to amplify the resonator signal with a selected trans-impedance gain. Additionally, the two stage amplifier topology yields a feedback resistance that provides the selected trans-impedance gain.

Abstract translation: 放大器和振荡器系统包括MEMS谐振器和两级放大器拓扑。 MEMS谐振器被配置为产生谐振器信号。 两级放大器拓扑被配置为以选定的跨阻增益放大谐振器信号。 另外，两级放大器拓扑产生提供所选择的跨阻抗增益的反馈电阻。

公开(公告)号：US20130285190A1

公开(公告)日：2013-10-31

申请号：US13744532

申请日：2013-01-18

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Yung-Chow Peng ,  Wen-Shen Chou ,  Jui-Cheng Huang

IPC: G06F17/50 ,  H01L27/04

CPC classification number: G06F17/5072 ,  H01L27/0207 ,  H01L27/04

Abstract: A multi-step density gradient smoothing layout style is disclosed in which a plurality of unit cells are arranged into an array with a feature density. One or more edges of the array is bordered by a first edge sub-array which has a feature density that is less than the feature density of the array. The first edge sub-array is bordered by second edge sub-array which has a feature density that is less than the feature density of the first edge sub-array, and is approaching that of the background circuitry.

Abstract translation: 公开了一种多步密度梯度平滑布局样式，其中多个单位单元被布置成具有特征密度的阵列。 阵列的一个或多个边缘由第一边缘子阵列界定，该第一边缘子阵列的特征密度小于阵列的特征密度。 第一边缘子阵列由第二边缘子阵列邻接，第二边缘子阵列的特征密度小于第一边缘子阵列的特征密度，并且接近背景电路的特征密度。

公开(公告)号：US11828722B2

公开(公告)日：2023-11-28

申请号：US16716196

申请日：2019-12-16

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ta-Chuan Liao ,  Chien-Kuo Yang ,  Yi-Shao Liu ,  Tung-Tsun Chen ,  Chan-Ching Lin ,  Jui-Cheng Huang ,  Felix Ying-Kit Tsui ,  Jing-Hwang Yang

IPC: G01N27/414

CPC classification number: G01N27/4145

Abstract: A biological device includes a substrate, a gate electrode, and a sensing well. The substrate includes a source region, a drain region, a channel region, a body region, and a sensing region. The channel region is disposed between the source region and the drain region. The sensing region is at least disposed between the channel region and the body region. The gate electrode is at least disposed on or above the channel region of the substrate. The sensing well is at least disposed adjacent to the sensing region.

公开(公告)号：US11747299B2

公开(公告)日：2023-09-05

申请号：US17826882

申请日：2022-05-27

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Tsung-Tsun Chen ,  Allen Timothy Chang ,  Jui-Cheng Huang

IPC: G01N27/414 ,  B01L3/00

CPC classification number: G01N27/4145 ,  B01L3/502715 ,  B01L2200/06 ,  B01L2300/0645 ,  B01L2400/0415

Abstract: In an embodiment, a device includes: an electrode configured to change a contact angle of a liquid droplet above the electrode when a first voltage is applied to the electrode; a sensing film overlaying the electrode, wherein the electrode is configured for assessment of a state of the liquid droplet based on a second voltage sensed at the electrode; a reference electrode above the electrode, the reference electrode configured to provide a reference voltage; and a microfluidic channel between the electrode and the reference electrode, wherein the microfluidic channel is configured to manipulate the liquid droplet using the electrode.