公开(公告)号：US20140021343A1

公开(公告)日：2014-01-23

申请号：US13834484

申请日：2013-03-15

Applicant: Sean R. Kirkpatrick ,  Allen R. Kirkpatrick

Inventor： Sean R. Kirkpatrick ,  Allen R. Kirkpatrick

IPC: H01J37/147

CPC classification number: G03F1/80 ,  B24B37/04 ,  G03F1/82 ,  H01J37/05 ,  H01J37/147 ,  H01J37/317 ,  H01J37/3171 ,  H01J2237/0041 ,  H01J2237/0812 ,  H01J2237/15 ,  H01L21/02115 ,  H01L21/02274 ,  H01L21/26506 ,  H01L21/26513 ,  H01L21/26566 ,  H01L21/31105 ,  H01L21/31111 ,  H01L29/36 ,  H05H3/02 ,  Y10T428/24355 ,  Y10T428/24479 ,  Y10T428/30

Abstract: An apparatus, method and products thereof provide an accelerated neutral beam derived from an accelerated gas cluster ion beam for processing materials.

Abstract translation: 其装置，方法和产品提供从用于加工材料的加速气体簇离子束衍生的加速中性束。

公开(公告)号：US06613240B2

公开(公告)日：2003-09-02

申请号：US09727881

申请日：2000-12-01

Applicant: Wesley J. Skinner ,  Allen R. Kirkpatrick

Inventor： Wesley J. Skinner ,  Allen R. Kirkpatrick

IPC: B44C122

CPC classification number: B82Y25/00 ,  B82Y40/00 ,  C23C14/221 ,  G11B5/84 ,  H01F41/308 ,  H01J2237/0812 ,  H01L21/32115

Abstract: A method and apparatus is disclosed that provided for the successful and precise smoothing of conductive films on insulating films or substrates. The smoothing technique provides a smooth surface that is substantially free of scratches. By supplying a source of electrons, harmful charging of the films and damage to the films are avoided.

Abstract translation: 公开了一种方法和装置，其用于在绝缘膜或衬底上成功且精确地平滑导电膜。 平滑技术提供了基本上没有刮痕的光滑表面。 通过提供电子源，避免了膜的有害充电和膜的损坏。

公开(公告)号：US5855967A

公开(公告)日：1999-01-05

申请号：US959114

申请日：1997-10-23

Applicant: Allen R. Kirkpatrick

Inventor： Allen R. Kirkpatrick

IPC: C04B41/00 ,  C04B41/52 ,  C04B41/80 ,  C04B41/89 ,  C23C14/06 ,  C23C14/48 ,  C23C14/58 ,  C23C16/26 ,  C23C16/56 ,  C23C14/14

CPC classification number: C23C14/0605 ,  C04B41/0027 ,  C04B41/52 ,  C04B41/80 ,  C04B41/89 ,  C23C14/0611 ,  C23C14/48 ,  C23C14/5833 ,  C23C16/26 ,  C23C16/56

Abstract: This invention concerns a method for protecting surfaces of diamond, diamondlike carbon and of other forms of carbon, from the effects of oxidation which can occur at high temperatures in an oxidizing environment. The method involves exposing the surface of the diamond or other carbon material to energetic ions of, or containing, an element or elements which can be caused to react with the carbon to form a thin layer containing a carbide compound that is itself more oxidation resistant than the diamond or other carbon material and which is able to serve as a barrier to prevent or delay penetration of oxygen to the thereby protected diamond or other carbon material.

Abstract translation: 本发明涉及一种用于保护金刚石，类金刚石碳和其他形式的碳的表面的方法，所述方法不受氧化环境中高温下氧化的影响。 该方法包括将金刚石或其他碳材料的表面暴露于能够离子的元素或元素的能量离子，所述元素或元素可被引起与碳反应以形成含有碳化物化合物的薄层，该碳化物本身比 金刚石或其他碳材料，并且其能够用作屏障以防止或延迟氧气渗透到由此被保护的金刚石或其它碳材料。

公开(公告)号：US4082958A

公开(公告)日：1978-04-04

申请号：US791499

申请日：1977-04-27

Applicant: Allen R. Kirkpatrick

Inventor： Allen R. Kirkpatrick

IPC: H01J37/305 ,  H01L21/263 ,  H01J37/30

CPC classification number: H01L21/2636 ,  H01J37/305 ,  Y10S148/046 ,  Y10S438/907

Abstract: A pulsed electron beam generator produces a short duration pulse of electrons in the form of a directed beam for thermal processing of a semiconductor device, which is positioned in a pulsed electron beam chamber so that the propagating electron beam impacts upon the device surface in selected regions of the device that are to be processed. Energy deposited by the impacting electron pulse momentarily elevates the temperature of the selected regions above threshold processing temperatures for rapid, effective annealing, sintering or other thermal processing. The characteristics of the electron beam pulse are such that only those surface vicinity regions to be processed are elevated to a high temperature, the remaining mass of the semiconductor device not being subjected to unnecessary or undesirable high temperature exposure.

Abstract translation: 脉冲激光或闪光灯产生用于半导体器件的选定区域的热处理的短持续时间脉冲。 光脉冲被引向半导体器件并照射待处理器件的选定表面区域。 通过光脉冲沉积的能量将选定区域的温度暂时升高到高于阈值处理温度以进行快速，有效的退火，烧结或其他热处理。 光脉冲的特性使得只有待处理的那些表面附近区域升高到高温，并且半导体器件的剩余质量不会受到不必要或不期望的高温暴露。

公开(公告)号：US4285714A

公开(公告)日：1981-08-25

申请号：US131560

申请日：1980-03-18

Applicant: Allen R. Kirkpatrick

Inventor： Allen R. Kirkpatrick

IPC: B32B17/10 ,  C03C27/00 ,  H01L21/20 ,  C03B23/20 ,  C03C29/00

CPC classification number: H01L21/2007 ,  B32B17/10174 ,  B32B17/10816 ,  C03C27/00

Abstract: A method and apparatus for electrostatic bonding of a layered structure having at least one glass stratum by heating the layered structure to a temperature above the annealing point of the glass stratum, by applying a predetermined pressure and voltage potential across the layered structure while the layered structure is maintained at an elevated temperature. Application of pressure across the heated layered structure permits electrostatic bonding of non-complemental surfaces to form a laminated structure.

Abstract translation: 一种用于通过在层叠结构之间施加预定的压力和电压而将具有至少一个玻璃层的层状结构静电接合的方法和装置，通过将层叠结构加热至高于玻璃层的退火点的温度，同时层叠结构 保持在高温下。 在加热的层状结构上施加压力允许非互补表面的静电结合形成层压结构。

公开(公告)号：US3950187A

公开(公告)日：1976-04-13

申请号：US524062

申请日：1974-11-15

Applicant: Allen R. Kirkpatrick

Inventor： Allen R. Kirkpatrick

IPC: H01L21/00 ,  H01L21/263

CPC classification number: H01L21/2636 ,  H01L21/00

Abstract: A pulsed electron beam generator produces a short duration pulse of electrons in the form of a directed beam for thermal processing of a semiconductor device, which is positioned in a pulsed electron beam chamber so that the propagating electron beam impacts upon the device surface in selected regions of the device that are to be processed. Energy deposited by the impacting electron pulse momentarily elevates the temperature of the selected regions above threshold processing temperatures for rapid, effective annealing, sintering or other thermal processing. The characteristics of the electron beam pulse are such that only those surface vicinity regions to be processed are elevated to a high temperature, the remaining mass of the semiconductor device not being subjected to unnecessary or undesirable high temperature exposure.

公开(公告)号：US07410890B2

公开(公告)日：2008-08-12

申请号：US11150698

申请日：2005-06-11

Applicant: Allen R. Kirkpatrick ,  Sean Kirkpatrick ,  Martin D. Tabat ,  Thomas G. Tetreault ,  John O. Borland ,  John J. Hautala ,  Wesley J. Skinner

Inventor： Allen R. Kirkpatrick ,  Sean Kirkpatrick ,  Martin D. Tabat ,  Thomas G. Tetreault ,  John O. Borland ,  John J. Hautala ,  Wesley J. Skinner

IPC: H01L21/34

CPC classification number: H01L21/265 ,  H01J37/08 ,  H01J37/3171 ,  H01J2237/0812 ,  H01L21/223 ,  H01L21/26513 ,  H01L21/2656 ,  H01L21/26566 ,  H01L21/324

Abstract: Method of forming one or more doped regions in a semiconductor substrate and semiconductor junctions formed thereby, using gas cluster ion beams.

Abstract translation: 使用气体簇离子束在半导体衬底中形成一个或多个掺杂区域和由此形成的半导体结的方法。

公开(公告)号：US06624081B2

公开(公告)日：2003-09-23

申请号：US09969559

申请日：2001-10-02

Applicant: Jerald P. Dykstra ,  David J. Mount, Sr. ,  Wesley J. Skinner ,  Allen R. Kirkpatrick

Inventor： Jerald P. Dykstra ,  David J. Mount, Sr. ,  Wesley J. Skinner ,  Allen R. Kirkpatrick

IPC: H01L2120

CPC classification number: H01J37/147 ,  H01J2237/0044 ,  H01J2237/0203 ,  H01J2237/0812 ,  H01J2237/3151 ,  H01L21/31138

Abstract: A gas cluster ion beam (GCIB) etching process having a system for producing a gas cluster ion beam utilized to controllably etch a substrate. The gas cluster ion beam is initially directed along a preselected longitudinal axis. A portion of the GCIB etching apparatus is operably connected to the beam producing system and contains the substrate to be etched when impacted by said gas cluster ion beam. The portion of the GCIB etching apparatus includes a system for directing the gas cluster ion beam in a direction offset from the preselected longitudinal axis while permitting unwanted ionizing radiation to remain directed along the longitudinal axis. A substrate holder is located within a portion of the GCIB etching apparatus for positioning the substrate in line with the offset gas cluster ion beam during the etching process, and the unwanted ionizing radiation being substantially prevented from impinging upon the substrate during the etching process.

公开(公告)号：US06491800B2

公开(公告)日：2002-12-10

申请号：US09901203

申请日：2001-07-09

Applicant: Allen R. Kirkpatrick ,  Vincent DiFilippo

Inventor： Allen R. Kirkpatrick ,  Vincent DiFilippo

IPC: C23C1434

CPC classification number: C23F4/00 ,  A61F2/30767 ,  A61F2/3094 ,  A61F2/34 ,  A61F2002/30685 ,  A61F2002/30934 ,  A61F2002/3611 ,  A61F2310/00029 ,  C23C14/48 ,  C23C14/505 ,  H01J37/317 ,  H01J2237/0812 ,  H01J2237/336

Abstract: The application of gas cluster ion beam (GCIB) technology in order to modify the surface of a surgical implant such as the components of an artificial hip joint, thereby substantially reducing wear debris and osteolysis complications is disclosed. The approach of the surface modification comprises an atomic level surface smoothing utilizing GCIB to super smooth the femoral heads and/or the surfaces of the acetabular cups to reduce frictional wear at the interface of the bearing surfaces. A reduction in polyethylene debris and metal debris by GCIB smoothing on one or both bearing surfaces of a surgical implant reduces osteolysis, results in a substantial cost savings to the healthcare system, and reduces patient pain and suffering.

Abstract translation: 公开了采用气体簇离子束（GCIB）技术来改变手术植入物的表面，例如人造髋关节的组分，从而显着减少磨损碎屑和骨质溶解并发症。 表面改性的方法包括使用GCIB的原子水平表面平滑以使股骨头和/或髋臼杯的表面超平滑以减少在支承表面的界面处的摩擦磨损。 在手术植入物的一个或两个支承表面上通过GCIB平滑化减少聚乙烯碎屑和金属碎屑减少了骨质溶解，导致了医疗保健系统的显着成本节省，并且减少了患者的疼痛和痛苦。

公开(公告)号：US06331227B1

公开(公告)日：2001-12-18

申请号：US09461148

申请日：1999-12-14

Applicant: Jerald P. Dykstra ,  David J. Mount, Sr. ,  Wesley J. Skinner ,  Allen R. Kirkpatrick

Inventor： Jerald P. Dykstra ,  David J. Mount, Sr. ,  Wesley J. Skinner ,  Allen R. Kirkpatrick

IPC: H01J3700

CPC classification number: H01J37/147 ,  H01J2237/0044 ,  H01J2237/0203 ,  H01J2237/0812 ,  H01J2237/3151 ,  H01L21/31138

Abstract: A gas cluster ion beam (GCIB) etching apparatus having a system for producing a gas cluster ion beam utilized to controllably etch a substrate. The gas cluster ion beam is initially directed along a preselected longitudinal axis. A portion of the GCIB etching apparatus is operably connected to the beam producing system and contains the substrate to be etched when impacted by said gas cluster ion beam. The portion of the GCIB etching apparatus includes a system for directing the gas cluster ion beam in a direction offset from the preselected longitudinal axis while permitting unwanted ionizing radiation to remain directed along the longitudinal axis. A substrtate holder is located within a portion of the GCIB etching apparatus for positioning the substrate in line with the offset gas cluster ion beam during the etching process, and the unwanted ionizing radiation being substantially prevented from impinging upon the substrate during the etching process.

Abstract translation: 一种具有用于可控制地蚀刻衬底的用于产生气体簇离子束的系统的气体簇离子束（GCIB）蚀刻装置。 气体簇离子束最初沿着预选的纵向轴线引导。 GCIB蚀刻装置的一部分可操作地连接到光束产生系统，并且当被所述气体簇离子束撞击时包含待蚀刻的衬底。 GCIB蚀刻装置的一部分包括一个系统，用于将气体簇离子束沿预定的纵向轴线偏移的方向引导，同时允许不需要的电离辐射沿着纵向轴线保持定向。 衬底保持器位于GCIB蚀刻设备的一部分内，用于在蚀刻过程期间将衬底与偏移气体簇离子束对准，并且在蚀刻过程中基本上防止不需要的电离辐射撞击到衬底上。