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    Method of protecting surfaces on diamond, diamondlike carbon or carbon
    5.
    发明授权
    Method of protecting surfaces on diamond, diamondlike carbon or carbon 失效
    保护金刚石，类金刚石碳或碳的表面的方法

    公开(公告)号：US5855967A

    公开(公告)日：1999-01-05

    申请号：US959114

    申请日：1997-10-23

    Applicant: Allen R. Kirkpatrick

    Inventor： Allen R. Kirkpatrick

    IPC: C04B41/00 ,  C04B41/52 ,  C04B41/80 ,  C04B41/89 ,  C23C14/06 ,  C23C14/48 ,  C23C14/58 ,  C23C16/26 ,  C23C16/56 ,  C23C14/14

    CPC classification number: C23C14/0605 ,  C04B41/0027 ,  C04B41/52 ,  C04B41/80 ,  C04B41/89 ,  C23C14/0611 ,  C23C14/48 ,  C23C14/5833 ,  C23C16/26 ,  C23C16/56

    Abstract: This invention concerns a method for protecting surfaces of diamond, diamondlike carbon and of other forms of carbon, from the effects of oxidation which can occur at high temperatures in an oxidizing environment. The method involves exposing the surface of the diamond or other carbon material to energetic ions of, or containing, an element or elements which can be caused to react with the carbon to form a thin layer containing a carbide compound that is itself more oxidation resistant than the diamond or other carbon material and which is able to serve as a barrier to prevent or delay penetration of oxygen to the thereby protected diamond or other carbon material.

    Abstract translation: 本发明涉及一种用于保护金刚石，类金刚石碳和其他形式的碳的表面的方法，所述方法不受氧化环境中高温下氧化的影响。 该方法包括将金刚石或其他碳材料的表面暴露于能够离子的元素或元素的能量离子，所述元素或元素可被引起与碳反应以形成含有碳化物化合物的薄层，该碳化物本身比 金刚石或其他碳材料，并且其能够用作屏障以防止或延迟氧气渗透到由此被保护的金刚石或其它碳材料。

    Apparatus involving pulsed electron beam processing of semiconductor devices
    6.
    发明授权
    Apparatus involving pulsed electron beam processing of semiconductor devices 失效
    涉及半导体器件的脉冲电子束处理的装置

    公开(公告)号：US4082958A

    公开(公告)日：1978-04-04

    申请号：US791499

    申请日：1977-04-27

    Applicant: Allen R. Kirkpatrick

    Inventor： Allen R. Kirkpatrick

    IPC: H01J37/305 ,  H01L21/263 ,  H01J37/30

    CPC classification number: H01L21/2636 ,  H01J37/305 ,  Y10S148/046 ,  Y10S438/907

    Abstract: A pulsed electron beam generator produces a short duration pulse of electrons in the form of a directed beam for thermal processing of a semiconductor device, which is positioned in a pulsed electron beam chamber so that the propagating electron beam impacts upon the device surface in selected regions of the device that are to be processed. Energy deposited by the impacting electron pulse momentarily elevates the temperature of the selected regions above threshold processing temperatures for rapid, effective annealing, sintering or other thermal processing. The characteristics of the electron beam pulse are such that only those surface vicinity regions to be processed are elevated to a high temperature, the remaining mass of the semiconductor device not being subjected to unnecessary or undesirable high temperature exposure.

    Abstract translation: 脉冲激光或闪光灯产生用于半导体器件的选定区域的热处理的短持续时间脉冲。 光脉冲被引向半导体器件并照射待处理器件的选定表面区域。 通过光脉冲沉积的能量将选定区域的温度暂时升高到高于阈值处理温度以进行快速，有效的退火，烧结或其他热处理。 光脉冲的特性使得只有待处理的那些表面附近区域升高到高温，并且半导体器件的剩余质量不会受到不必要或不期望的高温暴露。

    DIAGNOSTIC METHOD AND APPARATUS FOR CHARACTERIZATION OF A NEUTRAL BEAM AND FOR PROCESS CONTROL THEREWITH
    8.
    发明申请
    DIAGNOSTIC METHOD AND APPARATUS FOR CHARACTERIZATION OF A NEUTRAL BEAM AND FOR PROCESS CONTROL THEREWITH 有权
    诊断方法和装置，用于表征中性束及其过程控制

    公开(公告)号：US20130105710A1

    公开(公告)日：2013-05-02

    申请号：US13660295

    申请日：2012-10-25

    Applicant: Sean R. Kirkpatrick ,  Allen R. Kirkpatrick

    Inventor： Sean R. Kirkpatrick ,  Allen R. Kirkpatrick

    IPC: G01T7/00

    CPC classification number: H01J37/244 ,  H01J37/304 ,  H01J37/317 ,  H01J2237/0812 ,  H01J2237/24514 ,  H01L21/26566

    Abstract: An apparatus and method for characterizing a particle beam provides receiving a particle beam in a central region of a reduced pressure enclosure; impacting the received beam against a beam strike that is thermally isolated from the enclosure; measuring a temperature change of the beam strike due to the impacting beam; measuring a pressure change in the enclosure due to receiving the beam; and processing the measured temperature change and the measured pressure change to determine beam characteristics.

    Abstract translation: 用于表征粒子束的装置和方法提供了在减压外壳的中心区域中接收粒子束; 撞击接收的梁抵抗与外壳热隔离的梁撞击; 测量由于冲击梁造成的射束的温度变化; 测量由于接收光束而导致的外壳中的压力变化; 并处理测量的温度变化和测量的压力变化以确定光束特性。

    Electrostatic bonding using externally applied pressure
    9.
    发明授权
    Electrostatic bonding using externally applied pressure 失效
    使用外部施加压力的静电粘合

    公开(公告)号：US4285714A

    公开(公告)日：1981-08-25

    申请号：US131560

    申请日：1980-03-18

    Applicant: Allen R. Kirkpatrick

    Inventor： Allen R. Kirkpatrick

    IPC: B32B17/10 ,  C03C27/00 ,  H01L21/20 ,  C03B23/20 ,  C03C29/00

    CPC classification number: H01L21/2007 ,  B32B17/10174 ,  B32B17/10816 ,  C03C27/00

    Abstract: A method and apparatus for electrostatic bonding of a layered structure having at least one glass stratum by heating the layered structure to a temperature above the annealing point of the glass stratum, by applying a predetermined pressure and voltage potential across the layered structure while the layered structure is maintained at an elevated temperature. Application of pressure across the heated layered structure permits electrostatic bonding of non-complemental surfaces to form a laminated structure.

    Abstract translation: 一种用于通过在层叠结构之间施加预定的压力和电压而将具有至少一个玻璃层的层状结构静电接合的方法和装置，通过将层叠结构加热至高于玻璃层的退火点的温度，同时层叠结构 保持在高温下。 在加热的层状结构上施加压力允许非互补表面的静电结合形成层压结构。

    Method and apparatus involving pulsed electron beam processing of semiconductor devices
    10.
    发明授权
    Method and apparatus involving pulsed electron beam processing of semiconductor devices 失效
    涉及半导体器件的脉冲电子束处理的方法和装置

    公开(公告)号：US3950187A

    公开(公告)日：1976-04-13

    申请号：US524062

    申请日：1974-11-15

    Applicant: Allen R. Kirkpatrick

    Inventor： Allen R. Kirkpatrick

    IPC: H01L21/00 ,  H01L21/263

    CPC classification number: H01L21/2636 ,  H01L21/00

    Abstract: A pulsed electron beam generator produces a short duration pulse of electrons in the form of a directed beam for thermal processing of a semiconductor device, which is positioned in a pulsed electron beam chamber so that the propagating electron beam impacts upon the device surface in selected regions of the device that are to be processed. Energy deposited by the impacting electron pulse momentarily elevates the temperature of the selected regions above threshold processing temperatures for rapid, effective annealing, sintering or other thermal processing. The characteristics of the electron beam pulse are such that only those surface vicinity regions to be processed are elevated to a high temperature, the remaining mass of the semiconductor device not being subjected to unnecessary or undesirable high temperature exposure.

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