公开(公告)号：US20170198001A1

公开(公告)日：2017-07-13

申请号：US15468276

申请日：2017-03-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang-chul Youn ,  Gyu-hee Park ,  Youn-joung Cho ,  Haruyoshi Sato ,  Takanori Koide ,  Naoki Yamada ,  Akio Saito ,  Akihiro Nishida

IPC: C07F15/04 ,  H01L21/285 ,  C23C16/455 ,  C09D1/00 ,  C23C16/06

CPC classification number: C07F15/045 ,  C09D1/00 ,  C23C16/06 ,  C23C16/45553 ,  C23C16/56 ,  H01L21/28518 ,  H01L21/28556

Abstract: Provided are a heterostructured nickel compound including a nickel amidinate ligand and an aliphatic alkoxy group and a method of forming a thin film including the heterostructured nickel compound. The method includes forming a nickel-containing layer on a substrate by using the heterostructured nickel compound including the nickel amidinate ligand and the aliphatic alkoxy group.

公开(公告)号：US20150228663A1

公开(公告)日：2015-08-13

申请号：US14598659

申请日：2015-01-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang-chul Youn ,  Gyu-hee Park ,  Youn-joung Cho ,  Seung-min Ryu

IPC: H01L27/115 ,  H01L21/285 ,  H01L29/49 ,  H01L21/768

CPC classification number: H01L27/11582 ,  C23C16/045 ,  C23C16/18 ,  C23C16/56 ,  H01L21/28518 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/28568 ,  H01L21/76843 ,  H01L21/76855 ,  H01L21/76856 ,  H01L21/76877 ,  H01L21/76879 ,  H01L27/11556 ,  H01L29/4916 ,  H01L29/66825 ,  H01L29/66833 ,  H01L29/7889 ,  H01L29/7926

Abstract: A method of manufacturing a semiconductor device is provided. A substrate including a structure in which a hole is formed is prepared. Precursors including a nickel alkoxide compound are vaporized. A nickel-containing layer is formed in the hole by providing the vaporized precursors including the nickel alkoxide compound onto the substrate.

Abstract translation: 提供一种制造半导体器件的方法。 制备包括形成孔的结构的基板。 包含镍醇盐化合物的前体气化。 通过在基材上提供包含镍醇盐化合物的蒸发前体，在孔中形成含镍层。

公开(公告)号：US11929389B2

公开(公告)日：2024-03-12

申请号：US17324492

申请日：2021-05-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Youn-soo Kim ,  Seung-min Ryu ,  Chang-su Woo ,  Hyung-suk Jung ,  Kyu-ho Cho ,  Youn-joung Cho

IPC: H01L21/28 ,  H01L49/02 ,  H10B12/00

CPC classification number: H01L28/40 ,  H10B12/315

Abstract: An integrated circuit device includes a lower electrode, an upper electrode, and a dielectric layer structure between the lower electrode and the upper electrode, the dielectric layer structure including a first surface facing the lower electrode and a second surface facing the upper electrode. The dielectric layer structure includes a first dielectric layer including a first dielectric material and a plurality of grains extending from the first surface to the second surface and a second dielectric layer including a second dielectric material and surrounding a portion of a sidewall of each of the plurality of grains of the first dielectric layer in a level lower than the second surface. The second dielectric material includes a material having bandgap energy which is higher than bandgap energy of the first dielectric material.

公开(公告)号：US10923341B2

公开(公告)日：2021-02-16

申请号：US16292939

申请日：2019-03-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jin-wook Park ,  Tae-jin Yim ,  Youn-joung Cho ,  Hiroshi Morita ,  Yasuhisa Furihata

IPC: H01L21/02 ,  H01L21/762 ,  H01L27/108 ,  C09D183/00

Abstract: A method of forming an oxide layer, the method including forming a first material layer on a semiconductor substrate, the first material layer including a polysiloxane material, wherein, from among Si—H1, Si—H2, and Si—H3 bonds included in the polysiloxane material, a percentage of Si—H2 bonds ranges from about 40% to about 90%, performing a first annealing process on the first material layer in an inert atmosphere, and performing a second annealing process on the first material layer in an oxidative atmosphere.

公开(公告)号：US10882873B2

公开(公告)日：2021-01-05

申请号：US16249067

申请日：2019-01-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seung-min Ryu ,  Youn-soo Kim ,  Jae-soon Lim ,  Youn-joung Cho ,  Myong-woon Kim ,  Kang-yong Lee ,  Sang-ick Lee ,  Sang-yong Jeon

IPC: C07F7/22 ,  C23C16/455 ,  C23C16/40

Abstract: A tin compound, tin precursor compound for atomic layer deposition (ALD), a method of forming a tin-containing material film, and a method of synthesizing a tin compound, the tin compound being represented by Chemical Formula (I): wherein R1, R2, Q1, Q2, Q3, and Q4 are each independently a C1 to C4 linear or branched alkyl group.

公开(公告)号：US10752645B2

公开(公告)日：2020-08-25

申请号：US16439369

申请日：2019-06-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Gyu-hee Park ,  Youn-soo Kim ,  Jae-soon Lim ,  Youn-joung Cho ,  Haruyoshi Sato ,  Naoki Yamada ,  Hiroyuki Uchiuzou

IPC: C07F7/10 ,  C23C16/40 ,  C23C16/455

Abstract: A silicon-containing intermediate is synthesized by reacting a lanthanum tris[bis(trialkylsilyl)amide] complex with an alkylcyclopentadiene. A lanthanum compound is synthesized by reacting the silicon-containing intermediate with a dialkylamidine-based compound.

公开(公告)号：US20200091275A1

公开(公告)日：2020-03-19

申请号：US16520912

申请日：2019-07-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Youn-soo Kim ,  Seung-min Ryu ,  Chang-su Woo ,  Hyung-suk Jung ,  Kyu-ho Cho ,  Youn-joung Cho

IPC: H01L49/02 ,  H01L27/108

Abstract: An integrated circuit device includes a lower electrode, an upper electrode, and a dielectric layer structure between the lower electrode and the upper electrode, the dielectric layer structure including a first surface facing the lower electrode and a second surface facing the upper electrode. The dielectric layer structure includes a first dielectric layer including a first dielectric material and a plurality of grains extending from the first surface to the second surface and a second dielectric layer including a second dielectric material and surrounding a portion of a sidewall of each of the plurality of grains of the first dielectric layer in a level lower than the second surface. The second dielectric material includes a material having bandgap energy which is higher than bandgap energy of the first dielectric material.

公开(公告)号：US10329312B2

公开(公告)日：2019-06-25

申请号：US15092953

申请日：2016-04-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Gyu-hee Park ,  Youn-soo Kim ,  Jae-soon Lim ,  Youn-joung Cho ,  Haruyoshi Sato ,  Naoki Yamada ,  Hiroyuki Uchiuzou

IPC: C07F7/10

Abstract: A silicon-containing intermediate is synthesized by reacting a lanthanum tris[bis(trialkylsilyl)amide] complex with an alkylcyclopentadiene. A lanthanum compound is synthesized by reacting the silicon-containing intermediate with a dialkylamidine-based compound.

公开(公告)号：US09790246B2

公开(公告)日：2017-10-17

申请号：US15468276

申请日：2017-03-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang-chul Youn ,  Gyu-hee Park ,  Youn-joung Cho ,  Haruyoshi Sato ,  Takanori Koide ,  Naoki Yamada ,  Akio Saito ,  Akihiro Nishida

IPC: C07F15/00 ,  C07F15/04 ,  C09D1/00 ,  C23C16/06 ,  C23C16/455 ,  H01L21/285

CPC classification number: C07F15/045 ,  C09D1/00 ,  C23C16/06 ,  C23C16/45553 ,  C23C16/56 ,  H01L21/28518 ,  H01L21/28556

Abstract: Provided are a heterostructured nickel compound including a nickel amidinate ligand and an aliphatic alkoxy group and a method of forming a thin film including the heterostructured nickel compound. The method includes forming a nickel-containing layer on a substrate by using the heterostructured nickel compound including the nickel amidinate ligand and the aliphatic alkoxy group.

公开(公告)号：US09391089B2

公开(公告)日：2016-07-12

申请号：US14598659

申请日：2015-01-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang-chul Youn ,  Gyu-hee Park ,  Youn-joung Cho ,  Seung-min Ryu

IPC: H01L27/115 ,  H01L21/768 ,  H01L21/285 ,  H01L29/49 ,  H01L29/66 ,  H01L29/788 ,  H01L29/792

CPC classification number: H01L27/11582 ,  C23C16/045 ,  C23C16/18 ,  C23C16/56 ,  H01L21/28518 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/28568 ,  H01L21/76843 ,  H01L21/76855 ,  H01L21/76856 ,  H01L21/76877 ,  H01L21/76879 ,  H01L27/11556 ,  H01L29/4916 ,  H01L29/66825 ,  H01L29/66833 ,  H01L29/7889 ,  H01L29/7926

Abstract: A method of manufacturing a semiconductor device is provided. A substrate including a structure in which a hole is formed is prepared. Precursors including a nickel alkoxide compound are vaporized. A nickel-containing layer is formed in the hole by providing the vaporized precursors including the nickel alkoxide compound onto the substrate.

Abstract translation: 提供一种制造半导体器件的方法。 制备包括形成孔的结构的基板。 包含镍醇盐化合物的前体气化。 通过在基材上提供包含镍醇盐化合物的蒸发前体，在孔中形成含镍层。