公开(公告)号：US10923341B2

公开(公告)日：2021-02-16

申请号：US16292939

申请日：2019-03-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jin-wook Park ,  Tae-jin Yim ,  Youn-joung Cho ,  Hiroshi Morita ,  Yasuhisa Furihata

IPC: H01L21/02 ,  H01L21/762 ,  H01L27/108 ,  C09D183/00

Abstract: A method of forming an oxide layer, the method including forming a first material layer on a semiconductor substrate, the first material layer including a polysiloxane material, wherein, from among Si—H1, Si—H2, and Si—H3 bonds included in the polysiloxane material, a percentage of Si—H2 bonds ranges from about 40% to about 90%, performing a first annealing process on the first material layer in an inert atmosphere, and performing a second annealing process on the first material layer in an oxidative atmosphere.