公开(公告)号：US10153292B2

公开(公告)日：2018-12-11

申请号：US15907667

申请日：2018-02-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jong Won Kim ,  Seung Hyun Lim ,  Chang Seok Kang ,  Young Woo Park ,  Dae Hoon Bae ,  Dong Seog Eun ,  Woo Sung Lee ,  Jae Duk Lee ,  Jae Woo Lim ,  Hanmei Choi

IPC: H01L27/11556 ,  H01L27/11565 ,  H01L27/11582 ,  H01L27/11521 ,  H01L27/11568 ,  H01L27/11519 ,  H01L27/11524 ,  H01L27/11529 ,  H01L27/1157 ,  H01L27/11573 ,  H01L29/04 ,  H01L49/02

Abstract: A memory device includes a plurality of channel regions that each extend in a direction perpendicular to an upper surface of a substrate, a plurality of gate electrode layers and a plurality of insulating layers stacked on the substrate adjacent the channel regions, each of the gate electrodes extending different lengths, and a plurality of dummy channel regions adjacent first ends of the plurality of gate electrode layers, wherein the substrate includes a substrate insulating layer formed below the plurality of dummy channel regions.

公开(公告)号：US09800843B2

公开(公告)日：2017-10-24

申请号：US14973700

申请日：2015-12-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seung Hyun Lim ,  Jae Hong Kim ,  Han Kook Cho ,  Dong Hun Lee ,  Jin Uk Jeon ,  Seog Heon Ham

IPC: H04N5/345 ,  H04N5/232 ,  H04N5/335 ,  H04N9/04 ,  H04N5/365 ,  H04N5/378

CPC classification number: H04N9/045 ,  H04N5/3456 ,  H04N5/3651 ,  H04N5/378

Abstract: An image sensor for reducing channel variation and an image processing system including the same. The image sensor includes first to mth pixels (m≧2), each of which is connected to a corresponding column line from among first to mth column lines and is configured to output a respective pixel signal.’ The image sensor further includes first to mth bias circuits, each of which is connected to a corresponding column line from among the first to mth column lines and is configured to fix a voltage of the corresponding column line to a bias voltage when a column line-specific pixel is not selected to output the respective pixel signal. An analog-to-digital converter in the image sensor is configured to convert the pixel signals into digital signals.

公开(公告)号：US09407849B2

公开(公告)日：2016-08-02

申请号：US14084705

申请日：2013-11-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung Ho Suh ,  Yu Jin Park ,  Jin Ho Seo ,  Kwi Sung Yoo ,  Seung Hyun Lim ,  Seog Heon Ham ,  Kyoung Min Koh ,  Han Yang ,  Jae Cheol Yun ,  Yong Lim ,  Jae Jin Jung

IPC: H01J40/14 ,  H04N5/378 ,  H04N5/374

CPC classification number: H04N5/378 ,  H04N5/3742

Abstract: An image sensor includes a first column pair and a second column pair among a plurality of columns of a pixel array, an analog-to-digital converter pair, and a switch arrangement circuit configured to connect the first column pair with the analog-to-digital converter pair in response to first switch control signals such that two rows among a plurality of rows in the pixel array are read during a single access time.

Abstract translation: 图像传感器包括像素阵列的多列之中的第一列对和第二列对，模数转换器对以及被配置为将第一列对与模拟 - 数字转换器对连接的开关布置电路， 数字转换器对响应于第一开关控制信号，使得在单个访问时间期间读取像素阵列中的多行中的两行。

公开(公告)号：US11509850B2

公开(公告)日：2022-11-22

申请号：US16658599

申请日：2019-10-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sang Hyun Cho ,  Ji Yong Park ,  Dae Hwa Paik ,  Kyoung Min Koh ,  Min Ho Kwon ,  Seung Hyun Lim

IPC: H04N5/378 ,  H03M1/08 ,  H03M1/18 ,  H03M5/02 ,  H04N5/369 ,  H03M1/12 ,  H03M7/30 ,  H04N5/374 ,  H03M1/56

Abstract: An image sensor chip includes an internal voltage generator for generating internal voltages using an external voltage received at a first terminal of the image sensor chip, a temperature sensor for generating a temperature voltage, a selection circuit for outputting one of the external voltage, the internal voltages, and the temperature voltage, a digital code generation circuit for generating a digital code using an output voltage of the selection circuit, and a second terminal for outputting the digital code from the image sensor chip.

公开(公告)号：US11152407B2

公开(公告)日：2021-10-19

申请号：US16354593

申请日：2019-03-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jae Hong Kim ,  Dae Hwa Paik ,  Seung Hyun Lim ,  Sin Hwan Lim

IPC: H01L27/146 ,  H04N5/378

Abstract: An image sensor includes a first column line and a second column line configured to extend in a first direction, a plurality of pixel groups configured to connect to the first column line or the second column line and to comprise a plurality of pixels in each of the plurality of pixel groups, a bias circuit configured to comprise a first current circuit and a second current circuit configured to output different bias currents in a first operational mode, and a switching circuit configured to connect the first column line to the first current circuit and connect the second column line to the second current circuit during a first time period, and to connect the first column line to the second current circuit and connect the second column line to the first current circuit during a second time period subsequent to the first time period in the first operational mode.

公开(公告)号：US11076118B2

公开(公告)日：2021-07-27

申请号：US16740545

申请日：2020-01-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Minji Hwang ,  Hyosang Kim ,  Haesick Sul ,  Seung Hyun Lim

IPC: H04N5/378 ,  H04N9/04 ,  H04N5/345 ,  H04N5/347 ,  H04N5/3745 ,  H04N5/369 ,  H01L27/146

Abstract: Disclosed is an image sensor. The image sensor includes an active pixel sensor array including first to fourth pixel units sequentially arranged in a column direction, and each of the first to fourth pixel units is composed of a plurality of pixels. A first pixel group including the first and second pixel units is connected to a first column line, and a second pixel group including the third pixel unit and the fourth pixel unit is connected to a second column line. The image sensor includes a correlated double sampling circuit including first and second correlated double samplers and configured to convert a first sense voltage sensed from a selected pixel of the first pixel group and a second sense voltage sensed from a selected pixel of the second pixel group into a first correlated double sampling signal and a second correlated double sampling signal, respectively.

公开(公告)号：US10368023B2

公开(公告)日：2019-07-30

申请号：US15252596

申请日：2016-08-31

Applicant: Samsung Electronics Co., Ltd.

Inventor： Minji Hwang ,  Hyosang Kim ,  Haesick Sul ,  Seung Hyun Lim

IPC: H04N5/378 ,  H01L27/146 ,  H04N5/345 ,  H04N5/347 ,  H04N5/3745 ,  H04N9/04

Abstract: Disclosed is an image sensor. The image sensor includes an active pixel sensor array including first to fourth pixel units sequentially arranged in a column direction, and each of the first to fourth pixel units is composed of a plurality of pixels. A first pixel group including the first and second pixel units is connected to a first column line, and a second pixel group including the third pixel unit and the fourth pixel unit is connected to a second column line. The image sensor includes a correlated double sampling circuit including first and second correlated double samplers and configured to convert a first sense voltage sensed from a selected pixel of the first pixel group and a second sense voltage sensed from a selected pixel of the second pixel group into a first correlated double sampling signal and a second correlated double sampling signal, respectively.

公开(公告)号：US10056491B2

公开(公告)日：2018-08-21

申请号：US15420512

申请日：2017-01-31

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seong Hoon Jeong ,  Hong Bum Park ,  HanMei Choi ,  Jae Young Park ,  Seung Hyun Lim

IPC: H01L29/78 ,  H01L29/06 ,  H01L29/40 ,  H01L29/51 ,  H01L29/66 ,  H01L29/41 ,  H01L27/08 ,  H01L27/10 ,  H01L21/28 ,  H01L21/8234 ,  H01L27/088 ,  H01L29/423

CPC classification number: H01L29/7854 ,  H01L21/28158 ,  H01L21/823431 ,  H01L21/823462 ,  H01L27/0886 ,  H01L29/0657 ,  H01L29/408 ,  H01L29/42364 ,  H01L29/513 ,  H01L29/66818 ,  H01L29/7851 ,  H01L29/7853

Abstract: A semiconductor device is provided including a fin active region on a substrate. The fin active region includes a lower region, a middle region, and an upper region. The middle region has lateral surfaces with a slope less steep than the lateral surfaces of the upper region. An isolation region is on a lateral surface of the lower region of the fin active region. A gate electrode structure is provided. A gate dielectric structure having an oxidation oxide layer and a deposition oxide layer, while having a thickness greater than half a width of the upper region of the fin active region is provided. The deposition oxide layer is between the gate electrode structure and the fin active region and the gate electrode structure and the isolation region, and the oxidation oxide layer is between the fin active region and the deposition oxide layer.

公开(公告)号：US20140146210A1

公开(公告)日：2014-05-29

申请号：US14067293

申请日：2013-10-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyeokjong Lee ,  Byung-Jo Kim ,  Jaejung Park ,  Yunjung Kim ,  Jinho Seo ,  Seung Hyun Lim ,  Seogheon Ham

IPC: H04N5/361

CPC classification number: H04N5/361 ,  H04N5/378

Abstract: A solid state imaging device includes a pixel array comprising a plurality of photoelectric conversion devices and an analog to digital conversion (ADC) circuit configured to convert an image signal received from the pixel array to a digital signal responsive to a ramp signal and a gain setting. The solid state imaging device further includes a ramp signal generator circuit configured to generate the ramp signal with a slope that varies responsive to a control signal and a dark level offset compensation circuit configured to generate the control signal responsive to the gain setting and a dark level measurement.

Abstract translation: 固态成像装置包括像素阵列，其包括多个光电转换装置和模数转换（ADC）电路，模拟数字转换（ADC）电路被配置为响应于斜坡信号和增益设置将从像素阵列接收的图像信号转换为数字信号 。 固态成像装置还包括斜坡信号发生器电路，该斜坡信号发生器电路被配置为产生具有响应于控制信号变化的斜率的斜坡信号和配置成响应于增益设置产生控制信号的暗电平偏移补偿电路和暗电平 测量。

公开(公告)号：US12199115B2

公开(公告)日：2025-01-14

申请号：US18599687

申请日：2024-03-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jae Hong Kim ,  Dae Hwa Paik ,  Seung Hyun Lim ,  Sin Hwan Lim

IPC: H01L27/146 ,  H04N25/75 ,  H04N25/767 ,  H04N25/778 ,  H04N25/78

Abstract: An image sensor includes a first column line and a second column line configured to extend in a first direction, a plurality of pixel groups configured to connect to the first column line or the second column line and to comprise a plurality of pixels in each of the plurality of pixel groups, a bias circuit configured to comprise a first current circuit and a second current circuit configured to output different bias currents in a first operational mode, and a switching circuit configured to connect the first column line to the first current circuit and connect the second column line to the second current circuit during a first time period, and to connect the first column line to the second current circuit and connect the second column line to the first current circuit during a second time period subsequent to the first time period in the first operational mode.