公开(公告)号：US11979119B2

公开(公告)日：2024-05-07

申请号：US17250748

申请日：2019-08-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyunchul Park ,  Byungjoon Park ,  Daehyun Kang ,  Juho Son ,  Sunggi Yang ,  Jeongho Lee ,  Yunsung Cho

IPC: H03F1/22 ,  H03F1/08 ,  H03F1/32 ,  H03F1/56 ,  H03F3/193 ,  H03F3/21 ,  H03F3/24

CPC classification number: H03F3/245 ,  H03F1/086 ,  H03F1/3205 ,  H03F1/565 ,  H03F3/193 ,  H03F3/21

Abstract: Disclosed is a 5G (5th generation) or pre-5G communication system for supporting a data transmission rate higher than that of a 4G (4th generation) communication system such as long-term evolution (LTE). A transmission device comprises: a first amplification unit having a common source structure, including cross coupled capacitors, and amplifying an input signal; a second amplification unit, having a common gate structure, for amplifying a signal output from the first amplification unit; and a first removal unit which is connected to output terminals of the first amplification unit and input terminals of the second amplification unit and which removes at least one portion of second harmonics. The first removal unit can offset, with respect to a fundamental frequency, at least some of parasitic capacitance generated from the output terminals of the first amplification unit and the input terminals of the second amplification unit, and can ground a signal having a secondary harmonic frequency with respect to the secondary harmonic frequency.

公开(公告)号：US11362690B2

公开(公告)日：2022-06-14

申请号：US17262961

申请日：2019-07-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Byungjoon Park ,  Daehyun Kang ,  Jihoon Kim ,  Hyunchul Park ,  Juho Son

IPC: H04B1/04 ,  H03F3/24 ,  H03F1/02 ,  H03F3/19

Abstract: The present disclosure relates to a 5th generation (5G) or pre-5G communication system for supporting a data transmission rate higher than that of a 4th generation (4G) communication system such as long term evolution (LTE). The present disclosure is to amplify transmission signals in a wireless communication system, and a transmitting device may include an antenna array including a plurality of antenna elements, a plurality of amplification chains for amplifying signals transmitted through the plurality of the antenna elements, and a power supply line for supplying powers to the plurality of the amplification chains. Herein, the powers used by power amplifiers included in at least one amplification chain of the plurality of the amplification chains may be divided by filtering or by independent pads and branch-lines.

公开(公告)号：US09672915B2

公开(公告)日：2017-06-06

申请号：US14995627

申请日：2016-01-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyunchul Park ,  Se-Wook Na ,  Young-Jae Jung ,  Durina Park

IPC: G06F12/00 ,  G11C16/04 ,  G11C16/30 ,  G11C5/14 ,  G11C29/02 ,  G06F13/16 ,  G06F11/14 ,  G11C29/04

CPC classification number: G11C16/0466 ,  G06F11/1456 ,  G06F13/1668 ,  G11C5/147 ,  G11C16/30 ,  G11C29/021 ,  G11C2029/0409

Abstract: A storage device includes a nonvolatile memory device and a memory controller configured to control the nonvolatile memory device in response to a request from a host. The memory controller is configured to employ state information related to the confidence level of a power supply to determine a reliability level with respect to an access operation of the memory device and to perform a reliability guarantee operation corresponding to the determined reliability level.

公开(公告)号：US20160259577A1

公开(公告)日：2016-09-08

申请号：US14995627

申请日：2016-01-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyunchul Park ,  Se-Wook Na ,  Young-Jae Jung ,  Durina Park

IPC: G06F3/06 ,  G11C16/04

CPC classification number: G11C16/0466 ,  G06F11/1456 ,  G06F13/1668 ,  G11C5/147 ,  G11C16/30 ,  G11C29/021 ,  G11C2029/0409

Abstract: A storage device includes a nonvolatile memory device and a memory controller configured to control the nonvolatile memory device in response to a request from a host. The memory controller is configured to employ state information related to the confidence level of a power supply to determine a reliability level with respect to an access operation of the memory device and to perform a reliability guarantee operation corresponding to the determined reliability level.

Abstract translation: 存储设备包括非易失性存储器设备和被配置为响应于来自主机的请求来控制非易失性存储器件的存储器控​​制器。 存储器控制器被配置为使用与电源的置信水平相关的状态信息来确定关于存储器件的访问操作的可靠性水平，并且执行与所确定的可靠性水平相对应的可靠性保证操作。

公开(公告)号：US20130179647A1

公开(公告)日：2013-07-11

申请号：US13734244

申请日：2013-01-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyunchul Park ,  Sangmok Kim ,  Kyung Ho Kim ,  Otae Bae ,  Donggi Lee

IPC: G06F12/02

CPC classification number: G06F12/02 ,  G06F12/0238 ,  G06F12/0246 ,  G06F2212/7202 ,  G06F2212/7203

Abstract: Disclosed is a data managing method of a storage device which includes at least one nonvolatile memory device and a controller controlling the nonvolatile memory device. The data managing method includes receiving an input/output request and generating a section directing logical addresses based on the input/output request. The section is managed using section information, and the section information includes a start logical address corresponding to the input/output request, spatial locality information having the number of the directed logical addresses, and historical request information.

Abstract translation: 公开了一种存储装置的数据管理方法，其包括至少一个非易失性存储装置和控制非易失性存储装置的控制器。 数据管理方法包括接收输入/输出请求并根据输入/输出请求生成指向逻辑地址的部分。 该部分使用部分信息进行管理，部分信息包括与输入/输出请求对应的起始逻辑地址，具有定向逻辑地址数量的空间位置信息和历史请求信息。