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公开(公告)号：US11804495B2
公开(公告)日：2023-10-31
申请号：US17886489
申请日：2022-08-12
Applicant: Samsung Display Co., Ltd.
Inventor： Young-Wook Lee , Woo-Geun Lee , Ki-Won Kim , Hyun-Jung Lee , Ji-Soo Oh
IPC: H01L27/12 , H01L29/786 , H01L21/768
CPC classification number: H01L27/124 , H01L21/76834 , H01L27/127 , H01L27/1218 , H01L27/1225 , H01L27/1255 , H01L27/1262 , H01L27/1288 , H01L29/78693 , H01L29/7869
Abstract: A substrate including a first signal line and a first electrode disposed on the substrate, an oxide semiconductor layer pattern overlapping the first electrode, an insulating layer disposed between the first electrode and the oxide semiconductor layer pattern, a second signal line intersecting the first signal line, a second electrode electrically connected to the oxide semiconductor layer pattern, a third electrode electrically connected to the oxide semiconductor layer pattern and spaced apart from the second electrode, and an insulator comprising a first portion disposed between the first signal line and the second signal line, and at least partially overlapping with both of the first signal line and the second signal line.
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公开(公告)号：US11437412B2
公开(公告)日：2022-09-06
申请号：US17124497
申请日：2020-12-17
Applicant: Samsung Display Co., Ltd.
Inventor： Young-Wook Lee , Woo-Geun Lee , Ki-Won Kim , Hyun-Jung Lee , Ji-Soo Oh
IPC: H01L27/12 , H01L29/786 , H01L21/768
Abstract: A substrate including a gate line and a first electrode disposed on the substrate, an oxide semiconductor layer pattern overlapping the first electrode, an insulating layer disposed between the first electrode and the oxide semiconductor layer pattern, a data line intersecting the gate line, a second electrode electrically connected to the oxide semiconductor layer pattern, a third electrode electrically connected to the oxide semiconductor layer, the third electrode spaced apart from the second electrode, and an insulating pattern including a first portion which is disposed between the gate line and the data line and at least partially overlaps with both of the gate line and the data line.
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公开(公告)号：US20150318312A1
公开(公告)日：2015-11-05
申请号：US14799060
申请日：2015-07-14
Applicant: Samsung Display Co.,Ltd
Inventor： Pil-Sang Yun , Ki-Won Kim , Hye-Young Ryu , Woo-Geun Lee , Seung-Ha Choi , Jae-Hyoung Youn , Kyoung-Jae Chung , Young-Wook Lee , Je-Hun Lee , Kap-Soo Yoon , Do-Hyun Kim , Dong-Ju Yang , Young-Joo Choi
IPC: H01L27/12 , H01L29/786
CPC classification number: H01L29/41733 , H01L21/44 , H01L21/441 , H01L21/465 , H01L21/475 , H01L21/47573 , H01L21/47635 , H01L27/1214 , H01L27/1225 , H01L27/127 , H01L27/1288 , H01L29/66969 , H01L29/78606 , H01L29/7869 , H01L29/78696
Abstract: A thin film transistor panel includes an insulating substrate, a gate insulating layer disposed on the insulating substrate, an oxide semiconductor layer disposed on the gate insulating layer, an etch stopper disposed on the oxide semiconductor layer, and a source electrode and a drain electrode disposed on the etch stopper.
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14.发明申请THIN FILM TRANSISTOR, THIN FILM TRANSISTOR PANEL, AND METHOD FOR MANUFACTURING THE SAME 审中-公开薄膜晶体管，薄膜晶体管板及其制造方法公开(公告)号：US20150287836A1
公开(公告)日：2015-10-08
申请号：US14743387
申请日：2015-06-18
Applicant: SAMSUNG DISPLAY CO., LTD.
Inventor： Hyun-Jung Lee , Sung-Haeng Cho , Woo-Geun Lee , Jang-Hoon Ha , Hee-Jun Byeon , Ji-Yun Hong , Ji-Soo Oh
IPC: H01L29/786 , H01L29/417 , H01L27/12
CPC classification number: H01L29/78693 , H01L27/1225 , H01L29/41733 , H01L29/78606 , H01L29/7869
Abstract: A Thin Film Transistor (TFT) includes a substrate, a semiconductor layer disposed on the substrate a first source electrode and a first drain electrode spaced apart from each other on the semiconductor layer, a channel area disposed in the semiconductor layer between the first source electrode and the first drain electrode, an etching prevention layer disposed on the channel area, the first source electrode, and the first drain electrode and a second source electrode in contact with the first source electrode, and a second drain electrode in contact with the first drain electrode.
Abstract translation: 薄膜晶体管（TFT）包括衬底，在衬底上设置有在半导体层上彼此间隔开的第一源电极和第一漏电极的半导体层，设置在第一源极之间的半导体层中的沟道区 所述第一漏电极，设置在所述沟道区上的防蚀层，所述第一源电极和所述第一漏电极以及与所述第一源极接触的第二源电极，以及与所述第一漏极接触的第二漏极 电极。
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公开(公告)号：US08969131B2
公开(公告)日：2015-03-03
申请号：US14094001
申请日：2013-12-02
Applicant: Samsung Display Co., Ltd.
Inventor： Hye-Young Ryu , Jin-Won Lee , Woo-Geun Lee , Hee-Jun Byeon , Xun Zhu
CPC classification number: H01L27/1288 , H01L27/1214 , H01L27/1225 , H01L27/1248 , H01L27/3272 , H01L51/5253 , H01L2227/323
Abstract: A thin film transistor panel includes a substrate, a light blocking layer on the substrate, a first protective film on the light blocking layer, a first electrode and a second electrode on the first protective film, an oxide semiconductor layer on a portion of the first protective film exposed between the first electrode and the second electrode, an insulating layer, a third electrode overlapping with the oxide semiconductor layer and on the insulating layer, and a fourth electrode on the insulating layer. The light blocking layer includes first sidewalls, and the first protective film includes second sidewalls. The first and the second sidewalls are disposed along substantially the same line.
Abstract translation: 薄膜晶体管面板包括基板，基板上的阻光层，遮光层上的第一保护膜，第一保护膜上的第一电极和第二电极，第一保护膜的一部分上的氧化物半导体层 在第一电极和第二电极之间暴露的保护膜，绝缘层，与氧化物半导体层重叠的绝缘层和绝缘层上的第四电极。 遮光层包括第一侧壁，并且第一保护膜包括第二侧壁。 第一和第二侧壁沿着基本相同的线设置。
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Patent Agency Ranking
16.发明授权Thin-film transistor, method of fabricating the thin-film transistor, and display substrate using the thin-film transistor 有权薄膜晶体管，制造薄膜晶体管的方法以及使用该薄膜晶体管的显示基板公开(公告)号：US08835216B2
公开(公告)日：2014-09-16
申请号：US13932425
申请日：2013-07-01
Applicant: Samsung Display Co., Ltd.
Inventor： Pil-Sang Yun , Young-Wook Lee , Woo-Geun Lee
IPC: H01L21/34 , H01L27/12 , H01L21/467 , H01L29/786 , H01L29/417
CPC classification number: H01L21/467 , H01L27/1214 , H01L27/1225 , H01L27/124 , H01L29/41733 , H01L29/7869
Abstract: An oxide thin-film transistor (TFT) substrate that includes: a substrate, a gate line, a data line, an oxide TFT, and a pixel electrode. An oxide layer of the oxide TFT includes a first region that has semiconductor characteristics and a channel, and a second region that is conductive and surrounds the first region. A portion of the first region is electrically connected to the pixel electrode, and the second region is electrically connected to the data line.
Abstract translation: 一种氧化物薄膜晶体管（TFT）基板，包括：基板，栅极线，数据线，氧化物TFT和像素电极。 氧化物TFT的氧化物层包括具有半导体特性的第一区域和沟道，以及导电并围绕第一区域的第二区域。 第一区域的一部分电连接到像素电极，并且第二区域电连接到数据线。
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公开(公告)号：US08785934B2
公开(公告)日：2014-07-22
申请号：US13677176
申请日：2012-11-14
Applicant: Samsung Display Co., Ltd.
Inventor： Sang-Woo Whangbo , Shi-Yul Kim , Sung-Hoon Yang , Woo-Geun Lee
CPC classification number: H01L29/4908 , H01L27/124 , H01L27/1288
Abstract: A thin film transistor substrate includes a base substrate, a gate electrode, a gate insulating layer, a surface treating layer, an active layer, a source electrode and a drain electrode. The gate electrode is formed on the base substrate. The gate insulating layer is formed on the base substrate to cover the gate electrode. The surface treating layer is formed on the gate insulating layer by treating the gate insulating layer with a nitrogen-containing gas to prevent leakage current. The active layer is formed on the surface treating layer to cover the gate electrode. The source electrode and the gate electrode that are spaced apart from each other by a predetermined distance are formed on the active layer.
Abstract translation: 薄膜晶体管基板包括基底基板，栅极电极，栅极绝缘层，表面处理层，有源层，源电极和漏电极。 栅电极形成在基底基板上。 栅极绝缘层形成在基底基板上以覆盖栅电极。 通过用含氮气体处理栅极绝缘层，在栅极绝缘层上形成表面处理层，以防止漏电流。 在表面处理层上形成有源层以覆盖栅电极。 在有源层上形成彼此隔开预定距离的源电极和栅电极。
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18.发明申请THIN-FILM TRANSISTOR, METHOD OF FABRICATING THE THIN-FILM TRANSISTOR, AND DISPLAY SUBSTRATE USING THE THIN-FILM TRANSISTOR 有权薄膜晶体管，薄膜晶体管的制造方法和使用薄膜晶体管显示衬底公开(公告)号：US20130295718A1
公开(公告)日：2013-11-07
申请号：US13932425
申请日：2013-07-01
Applicant: Samsung Display Co., Ltd.
Inventor： Pil-Sang YUN , Young-Wook Lee , Woo-Geun Lee
IPC: H01L21/467
CPC classification number: H01L21/467 , H01L27/1214 , H01L27/1225 , H01L27/124 , H01L29/41733 , H01L29/7869
Abstract: An oxide thin-film transistor (TFT) substrate that includes: a substrate, a gate line, a data line, an oxide TFT, and a pixel electrode. An oxide layer of the oxide TFT includes a first region that has semiconductor characteristics and a channel, and a second region that is conductive and surrounds the first region. A portion of the first region is electrically connected to the pixel electrode, and the second region is electrically connected to the data line.
Abstract translation: 一种氧化物薄膜晶体管（TFT）基板，包括：基板，栅极线，数据线，氧化物TFT和像素电极。 氧化物TFT的氧化物层包括具有半导体特性的第一区域和沟道，以及导电并围绕第一区域的第二区域。 第一区域的一部分电连接到像素电极，并且第二区域电连接到数据线。
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公开(公告)号：US08563368B2
公开(公告)日：2013-10-22
申请号：US13758716
申请日：2013-02-04
Applicant: Samsung Display Co., Ltd
Inventor： Young-Wook Lee , Hong-Suk Yoo , Jean-Ho Song , Jae-Hyoung Youn , Woo-Geun Lee , Ki-Won Kim , Jong-In Kim
IPC: H01L21/00
CPC classification number: H01L29/66742 , H01L27/1225 , H01L27/124 , H01L27/1248
Abstract: A thin film transistor substrate according to an embodiment of the present invention includes: an insulation substrate; a gate line formed on the insulation substrate; a first interlayer insulating layer formed on the gate line; a data line and a gate electrode formed on the first interlayer insulating layer; a gate insulating layer formed on the data line and gate electrode; a semiconductor formed on the gate insulating layer and overlapping the gate electrode; a second interlayer insulating layer formed on the semiconductor; a first connection formed on the second interlayer insulating layer and electrically connecting the gate line and the gate electrode to each other; a drain electrode connected to the semiconductor; a pixel electrode connected to the drain electrode; and a second connection connecting the data line and the semiconductor to each other.
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公开(公告)号：US20130248866A1
公开(公告)日：2013-09-26
申请号：US13897879
申请日：2013-05-20
Applicant: Samsung Display Co., Ltd.
Inventor： Young-Wook LEE , Woo-Geun Lee , Ki-Won Kim , Hyun-Jung Lee , Ji-Soo Oh
IPC: H01L29/786
CPC classification number: H01L27/124 , H01L21/76834 , H01L27/1225 , H01L27/1255 , H01L27/1262 , H01L27/127 , H01L27/1288 , H01L29/7869 , H01L29/78693
Abstract: A thin film transistor (TFT) array substrate and a manufacturing method thereof are provided. The TFT array substrate may include a gate line disposed on a substrate and including a gate line and a gate electrode, an oxide semiconductor layer pattern disposed on the gate electrode, a data line disposed on the oxide semiconductor layer pattern and including a source electrode and a drain electrode of a thin film transistor (TFT) together with the gate electrode, and a data line extending in a direction intersecting the gate line, and etch stop patterns disposed at an area where the TFT is formed between the source/drain electrodes and the oxide semiconductor layer pattern and at an area where the gate line and the data line overlap each other between the gate line and the data line.
Abstract translation: 提供薄膜晶体管（TFT）阵列基板及其制造方法。 TFT阵列基板可以包括设置在基板上的栅极线，包括栅极线和栅电极，设置在栅电极上的氧化物半导体层图案，设置在氧化物半导体层图案上的数据线，并且包括源电极和 薄膜晶体管（TFT）的漏电极和栅电极以及沿着与栅极线交叉的方向延伸的数据线，以及蚀刻停止图案，设置在源极/漏极之间形成TFT的区域，以及 氧化物半导体层图案和栅极线与数据线在栅极线与数据线之间重叠的区域。
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