Abstract:
A thin-film transistor, including a substrate; an active layer on the substrate; a gate electrode on the active layer; and a gate insulating layer between the active layer and the gate electrode, the active layer including a channel region; source and drain regions at opposite sides of the channel region; and lightly doped regions between the channel region and the source region and between the channel region and the drain region, the source and drain regions being doped with a first element, and the lightly doped regions being doped with a second element different from the first element.
Abstract:
A method of manufacturing a light-emitting display device, the method including forming a first electrode on a substrate for each pixel of a plurality of pixels; forming a pixel defining film on the first electrode such that the pixel defining film includes an opening exposing the first electrode; and forming an organic layer on the first electrode, wherein forming the organic layer includes providing an organic solution into the opening of the pixel defining film, and drying the organic solution by performing an exhaust process in a state where an air current is provided by using a drying gas such that the air current is sequentially composed of a position facing the organic solution, a position to which the organic solution is discharged, and a position facing the organic solution.
Abstract:
An oxide sputtering target includes at least one of indium (In), zinc (Zn), tin (Sn), and gallium (Ga), and tungsten (W) in an amount from 0.005 mol % to 1 mol %.
Abstract:
Disclosed is an apparatus for transferring substrates capable of stably transferring substrates by using magnetic levitation. The apparatus includes a substrate stage including a substrate loading unit, a first guide block disposed at a first end of the substrate stage and including a first magnet generator, a second guide block disposed at a second end of the substrate stage and including a second magnet generator, a first guide rail accommodating the first magnet generator and including a third magnet generator, and a second guide rail accommodating the second magnet generator and including a fourth magnet generator. The first magnet generator and the third magnet generator exert repulsive force on each other, and the second magnet generator and the fourth magnet generator exert repulsive force on each other.
Abstract:
A thin film transistor array panel includes a substrate and a gate line disposed on the substrate, The gate line includes a gate electrode. A gate insulating layer is disposed on the gate line. An oxide semiconductor layer is disposed on the gate insulating layer. The oxide semiconductor layer at least partially overlaps the gate electrode. A data line is disposed on the oxide semiconductor layer. The data line includes a source electrode and a drain electrode facing the source electrode. The oxide semiconductor layer includes tungsten, indium, zinc, or tin.
Abstract:
An organic light-emitting display apparatus includes: a first pixel electrode; a second pixel electrode spaced apart from the first pixel electrode and comprising a top surface that is flatter than a top surface of the first pixel electrode; a first color emission layer on the first pixel electrode; and a second color emission layer on the second pixel electrode and configured to emit light having a wavelength longer than a wavelength of light emitted by the first color emission layer.
Abstract:
An organic light-emitting device including an anode electrode, a hole injection layer on the anode electrode, a hole transport layer on the hole injection layer, an emissive layer on the hole transport layer, and a cathode electrode on the emissive layer. A material of the hole injection layer includes a nitrogen-containing compound having a quinoid structure and a nitrogen-containing compound having a benzenoid structure. A ratio of a peak intensity IB to a peak intensity IA (IB/IA) in a Fourier transform infrared spectroscopy (FTIR) spectrum of the material of the hole injection layer ranges from 1.5 to 2.5, the peak intensity IA and the peak intensity IB being further defined.
Abstract:
A method of manufacturing a film includes disposing a substrate under one side of a baffle plate in a film manufacturing space, the baffle plate having a plurality of through-holes, and spraying an inert gas toward the substrate through a plurality of nozzle tips branched from a gas distribution pipe that is disposed over an other side of the baffle plate such that the inert gas penetrates the baffle plate through the through-holes.
Abstract:
An oxide sputtering target includes at least one of indium (In), zinc (Zn), tin (Sn), and gallium (Ga), and tungsten (W) in an amount from 0.005 mol % to 1 mol %.