公开(公告)号：US10573841B2

公开(公告)日：2020-02-25

申请号：US15441717

申请日：2017-02-24

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Katsushi Kishimoto ,  Yoon Ho Kang ,  Dong Hoon Kwak

IPC: H01L51/00 ,  H01L51/50 ,  H01L51/52 ,  H01L51/56

Abstract: An organic light-emitting device including an anode electrode, a hole injection layer on the anode electrode, a hole transport layer on the hole injection layer, an emissive layer on the hole transport layer, and a cathode electrode on the emissive layer. A material of the hole injection layer includes a nitrogen-containing compound having a quinoid structure and a nitrogen-containing compound having a benzenoid structure. A ratio of a peak intensity IB to a peak intensity IA (IB/IA) in a Fourier transform infrared spectroscopy (FTIR) spectrum of the material of the hole injection layer ranges from 1.5 to 2.5, the peak intensity IA and the peak intensity IB being further defined.

公开(公告)号：US09644270B2

公开(公告)日：2017-05-09

申请号：US14513463

申请日：2014-10-14

Applicant: Samsung Display Co., Ltd.

Inventor： Katsushi Kishimoto ,  Yeon-Keon Moon ,  Sang-Woo Sohn ,  Takayuki Fukasawa ,  Sang-Won Shin

IPC: C23C16/50 ,  H01L29/786 ,  H01L29/66 ,  H01L21/67 ,  C23C16/40 ,  C23C16/509 ,  H01L21/677 ,  H01L21/3105 ,  C23C16/46 ,  H01L21/02

CPC classification number: C23C16/50 ,  C23C16/40 ,  C23C16/46 ,  C23C16/509 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/3105 ,  H01L21/67109 ,  H01L21/67207 ,  H01L21/67745 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78693

Abstract: An oxide semiconductor depositing apparatus includes a heating chamber which is configured to heat and plasma-treat a first substrate including an insulation layer, and includes a chamber body, a heater disposed in the chamber body which is configured to heat the first substrate, and a cathode plate spaced apart from the heater, a high frequency voltage applied to the cathode plate, and a first process chamber which is configured to provide an oxide semiconductor layer on the insulation layer of the first substrate.

公开(公告)号：US09530622B2

公开(公告)日：2016-12-27

申请号：US14536317

申请日：2014-11-07

Applicant: Samsung Display Co., Ltd.

Inventor： Takayuki Fukasawa ,  Yeon-Keon Moon ,  Sang-Woo Sohn ,  Katsushi Kishimoto ,  Sang-Won Shin

IPC: H01J37/34 ,  H01J37/32

CPC classification number: H01J37/3244 ,  H01J37/34 ,  H01J37/3405

Abstract: A sputtering device and a gas supply pipe for a sputter device are disclosed. In one aspect, the sputtering device includes a chamber, a stage located in the chamber and configured to receive a substrate thereon, and a plurality of gas supply pipes arranged substantially parallel to each other. The gas supply pipes have a plurality of gas supply holes and the gas supply pipes are configured to supply gas into the chamber. The sputtering device further includes at least one exhaust pump placed at a side of the chamber, wherein the exhaust pump is substantially symmetrically arranged with respect to a center axis of the side of the chamber.

Abstract translation: 公开了用于溅射装置的溅射装置和气体供应管。 在一个方面中，溅射装置包括一个室，一个位于室内并被构造成在其上容纳衬底的台阶，以及基本上彼此平行布置的多个气体供应管。 气体供给管具有多个气体供给孔，气体供给管构成为向室供给气体。 溅射装置还包括放置在腔室一侧的至少一个排气泵，其中排气泵相对于腔室侧面的中心轴线基本对称地布置。

公开(公告)号：US11264571B2

公开(公告)日：2022-03-01

申请号：US16656462

申请日：2019-10-17

Applicant: Samsung Display Co., Ltd.

Inventor： Katsushi Kishimoto

IPC: H01L51/00 ,  H01L51/56

Abstract: A bake system may include a chamber having an internal space, a stage disposed in the internal space of the chamber and on which a target substrate is disposed, a gas ejection structure providing a process gas in the chamber, an exhaust structure, an atmosphere analyzer monitoring moisture and oxygen in the chamber, and a gas supplier controlling a flow rate of the process gas based on information provided from the atmosphere analyzer. The exhaust structure may include a suction part disposed in the internal space, and an exhaust part connected to the suction part and is disposed outside the chamber.

公开(公告)号：US20150200077A1

公开(公告)日：2015-07-16

申请号：US14536317

申请日：2014-11-07

Applicant: Samsung Display Co., Ltd.

Inventor： Takayuki FUKASAWA ,  Yeon-Keon Moon ,  Sang-Woo Sohn ,  Katsushi Kishimoto ,  Sang-Won Shin

IPC: H01J37/32

CPC classification number: H01J37/3244 ,  H01J37/34 ,  H01J37/3405

Abstract: A sputtering device and a gas supply pipe for a sputter device are disclosed. In one aspect, the sputtering device includes a chamber, a stage located in the chamber and configured to receive a substrate thereon, and a plurality of gas supply pipes arranged substantially parallel to each other. The gas supply pipes have a plurality of gas supply holes and the gas supply pipes are configured to supply gas into the chamber. The sputtering device further includes at least one exhaust pump placed at a side of the chamber, wherein the exhaust pump is substantially symmetrically arranged with respect to a center axis of the side of the chamber.

Abstract translation: 公开了用于溅射装置的溅射装置和气体供应管。 在一个方面中，溅射装置包括一个室，一个位于室内并被构造成在其上容纳衬底的台阶，以及基本上彼此平行布置的多个气体供应管。 气体供给管具有多个气体供给孔，气体供给管构成为向室供给气体。 溅射装置还包括放置在腔室一侧的至少一个排气泵，其中排气泵相对于腔室侧面的中心轴线基本对称地布置。

公开(公告)号：US09722089B2

公开(公告)日：2017-08-01

申请号：US14482413

申请日：2014-09-10

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Yeon Keon Moon ,  Sang Woo Sohn ,  Katsushi Kishimoto ,  Takayuki Fukasawa ,  Sang Won Shin

IPC: H01L29/786 ,  H01L29/66 ,  H01L21/02 ,  C23C14/08 ,  C23C14/34

CPC classification number: H01L29/7869 ,  C23C14/083 ,  C23C14/086 ,  C23C14/3464 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02581 ,  H01L21/02631 ,  H01L29/66969

Abstract: A thin film transistor array panel includes a substrate and a gate line disposed on the substrate. The gate line includes a gate electrode. A gate insulating layer is disposed on the gate line. An oxide semiconductor layer is disposed on the gate insulating layer. The oxide semiconductor layer at least partially overlaps the gate electrode. A data line is disposed on the oxide semiconductor layer. The data line includes a source electrode and a drain electrode facing the source electrode. The oxide semiconductor layer includes tungsten, indium, zinc, or tin.

公开(公告)号：US09484200B2

公开(公告)日：2016-11-01

申请号：US14049422

申请日：2013-10-09

Applicant: Samsung Display Co., Ltd.

Inventor： Katsushi Kishimoto ,  Takayuki Fukasawa

IPC: H01L21/00 ,  H01L29/78 ,  H01L21/02 ,  H01L29/786 ,  H01L29/66 ,  C23C14/34

CPC classification number: H01L21/02631 ,  C23C14/3414 ,  H01L21/02565 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78693

Abstract: A thin film transistor includes a gate electrode, a source electrode, a drain electrode disposed on the same layer as the source electrode and facing the source electrode, an oxide semiconductor layer disposed between the gate electrode and the source electrode or the drain electrode, and a gate insulating layer disposed between the gate electrode and the source electrode or the drain electrode, in which the oxide semiconductor layer includes thallium and at least one of indium, zinc, tin, and gallium. Also an oxide sputtering target including: an oxide including thallium (Tl); and at least one of indium, zinc, tin, and gallium.

Abstract translation: 薄膜晶体管包括栅电极，源电极，设置在与源电极相同的层上并面对源电极的漏电极，设置在栅电极和源电极或漏电极之间的氧化物半导体层，以及 栅极绝缘层，其设置在栅电极和源电极或漏电极之间，其中氧化物半导体层包括铊和铟，锌，锡和镓中的至少一种。 还有一种氧化物溅射靶，包括：包括铊（Tl）的氧化物; 以及铟，锌，锡和镓中的至少一种。

公开(公告)号：US20160149053A1

公开(公告)日：2016-05-26

申请号：US14834581

申请日：2015-08-25

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Katsushi Kishimoto

IPC: H01L29/786 ,  H01L27/32 ,  H01L21/02 ,  H01L21/225 ,  H01L29/45 ,  H01L29/66

CPC classification number: H01L29/78675 ,  H01L29/66757 ,  H01L29/78621

Abstract: A thin-film transistor, including a substrate; an active layer on the substrate; a gate electrode on the active layer; and a gate insulating layer between the active layer and the gate electrode, the active layer including a channel region; source and drain regions at opposite sides of the channel region; and lightly doped regions between the channel region and the source region and between the channel region and the drain region, the source and drain regions being doped with a first element, and the lightly doped regions being doped with a second element different from the first element.

Abstract translation: 一种薄膜晶体管，包括基板; 衬底上的有源层; 有源层上的栅电极; 以及在所述有源层和所述栅电极之间的栅绝缘层，所述有源层包括沟道区; 沟道区域的相对侧的源极和漏极区域; 以及在所述沟道区域和所述源极区域之间以及所述沟道区域和所述漏极区域之间的轻掺杂区域，所述源极和漏极区域掺杂有第一元素，并且所述轻掺杂区域掺杂有不同于所述第一元素的第二元素 。

公开(公告)号：US20150188399A1

公开(公告)日：2015-07-02

申请号：US14505712

申请日：2014-10-03

Applicant: Samsung Display Co., Ltd.

Inventor： Takayuki Fukasawa ,  Yeon-Keon Moon ,  Sang-woo Sohn ,  Katsushi Kishimoto ,  Sang-Won Shin

IPC: H02K41/02 ,  H02K7/09

CPC classification number: H02K41/031 ,  H01L21/677 ,  H01L21/67709 ,  H01L21/67712 ,  H01L21/6776 ,  H02K7/09

Abstract: Disclosed is an apparatus for transferring substrates capable of stably transferring substrates by using magnetic levitation. The apparatus includes a substrate stage including a substrate loading unit, a first guide block disposed at a first end of the substrate stage and including a first magnet generator, a second guide block disposed at a second end of the substrate stage and including a second magnet generator, a first guide rail accommodating the first magnet generator and including a third magnet generator, and a second guide rail accommodating the second magnet generator and including a fourth magnet generator. The first magnet generator and the third magnet generator exert repulsive force on each other, and the second magnet generator and the fourth magnet generator exert repulsive force on each other.

Abstract translation: 公开了一种通过磁悬浮转移能够稳定地转移衬底的衬底的装置。 该装置包括：衬底台，包括衬底装载单元，设置在衬底台的第一端处的第一引导块，并且包括第一磁体发生器，设置在衬底台的第二端处的第二引导块，并且包括第二磁体 发电机，容纳所述第一磁体发生器并包括第三磁体发生器的第一导轨和容纳所述第二磁体发生器并包括第四磁体发生器的第二导轨。 第一磁体发生器和第三磁体发生器相互施加排斥力，第二磁体发生器和第四磁体发生器相互施加排斥力。

公开(公告)号：US20230403919A1

公开(公告)日：2023-12-14

申请号：US17839384

申请日：2022-06-13

Applicant: Samsung Display Co., Ltd.

Inventor： Hyunsuk PARK ,  Katsushi Kishimoto

IPC: H01L51/00 ,  H01L51/50 ,  B82Y30/00 ,  H01L51/44

CPC classification number: H01L51/0005 ,  H01L51/504 ,  B82Y30/00 ,  H01L51/442 ,  H01L2251/558

Abstract: An organic light-emitting display apparatus capable of a high-quality image includings a substrate, a first pixel electrode over the substrate, and a first color emission layer disposed over the first pixel electrode and has an upper surface on which a distance in a direction perpendicular to a surface of the substrate between a highest point and a lowest point is about 400 Å to about 900 Å.