公开(公告)号：US11772191B2

公开(公告)日：2023-10-03

申请号：US17036701

申请日：2020-09-29

Applicant: Samsung Display Co., LTD.

Inventor： Takayuki Fukasawa

IPC: B23K26/06 ,  B23K26/14 ,  B23K26/362 ,  B23K101/36

CPC classification number: B23K26/0661 ,  B23K26/14 ,  B23K26/362 ,  B23K2101/36

Abstract: A method of processing a substrate includes placing a mask on a top surface of a processing substrate, the mask including openings, placing a cover substrate on the mask, the cover substrate overlapping the openings of the mask, placing the processing substrate on a vessel that accommodates an etching solution, and irradiating a beam onto the top surface of the processing substrate to form processing holes in the processing substrate, where a bottom surface of the processing substrate contacts the etching solution.

公开(公告)号：US10539821B2

公开(公告)日：2020-01-21

申请号：US15867891

申请日：2018-01-11

Applicant: Samsung Display Co., LTD.

Inventor： Takayuki Fukasawa

IPC: G02F1/1333 ,  G02B5/20 ,  G02B7/00 ,  G02F1/1335 ,  G09G3/36 ,  G02F1/133

Abstract: A display apparatus includes a display panel, an optical film and a radiation element. The display panel displays an image with light. The optical film surrounds the display panel and is movable around the display device. The radiation element makes contact with the optical film to absorb heat from the optical film movable around the display panel.

公开(公告)号：US09644270B2

公开(公告)日：2017-05-09

申请号：US14513463

申请日：2014-10-14

Applicant: Samsung Display Co., Ltd.

Inventor： Katsushi Kishimoto ,  Yeon-Keon Moon ,  Sang-Woo Sohn ,  Takayuki Fukasawa ,  Sang-Won Shin

IPC: C23C16/50 ,  H01L29/786 ,  H01L29/66 ,  H01L21/67 ,  C23C16/40 ,  C23C16/509 ,  H01L21/677 ,  H01L21/3105 ,  C23C16/46 ,  H01L21/02

CPC classification number: C23C16/50 ,  C23C16/40 ,  C23C16/46 ,  C23C16/509 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/3105 ,  H01L21/67109 ,  H01L21/67207 ,  H01L21/67745 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78693

Abstract: An oxide semiconductor depositing apparatus includes a heating chamber which is configured to heat and plasma-treat a first substrate including an insulation layer, and includes a chamber body, a heater disposed in the chamber body which is configured to heat the first substrate, and a cathode plate spaced apart from the heater, a high frequency voltage applied to the cathode plate, and a first process chamber which is configured to provide an oxide semiconductor layer on the insulation layer of the first substrate.

公开(公告)号：US09530622B2

公开(公告)日：2016-12-27

申请号：US14536317

申请日：2014-11-07

Applicant: Samsung Display Co., Ltd.

Inventor： Takayuki Fukasawa ,  Yeon-Keon Moon ,  Sang-Woo Sohn ,  Katsushi Kishimoto ,  Sang-Won Shin

IPC: H01J37/34 ,  H01J37/32

CPC classification number: H01J37/3244 ,  H01J37/34 ,  H01J37/3405

Abstract: A sputtering device and a gas supply pipe for a sputter device are disclosed. In one aspect, the sputtering device includes a chamber, a stage located in the chamber and configured to receive a substrate thereon, and a plurality of gas supply pipes arranged substantially parallel to each other. The gas supply pipes have a plurality of gas supply holes and the gas supply pipes are configured to supply gas into the chamber. The sputtering device further includes at least one exhaust pump placed at a side of the chamber, wherein the exhaust pump is substantially symmetrically arranged with respect to a center axis of the side of the chamber.

Abstract translation: 公开了用于溅射装置的溅射装置和气体供应管。 在一个方面中，溅射装置包括一个室，一个位于室内并被构造成在其上容纳衬底的台阶，以及基本上彼此平行布置的多个气体供应管。 气体供给管具有多个气体供给孔，气体供给管构成为向室供给气体。 溅射装置还包括放置在腔室一侧的至少一个排气泵，其中排气泵相对于腔室侧面的中心轴线基本对称地布置。

公开(公告)号：US10032927B2

公开(公告)日：2018-07-24

申请号：US15374189

申请日：2016-12-09

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Katsushi Kishimoto ,  Yoshinori Tanaka ,  Yeon Keon Moon ,  Sang Woo Sohn ,  Sang Won Shin ,  Takayuki Fukasawa

IPC: H01L29/786 ,  H01L29/26 ,  H01J37/34 ,  H01L29/66 ,  C23C14/34 ,  H01L29/417

Abstract: An oxide sputtering target includes at least one of indium (In), zinc (Zn), tin (Sn), and gallium (Ga), and tungsten (W) in an amount from 0.005 mol % to 1 mol %.

公开(公告)号：US11386843B2

公开(公告)日：2022-07-12

申请号：US16928458

申请日：2020-07-14

Applicant: Samsung Display Co., LTD.

Inventor： Takayuki Fukasawa

IPC: G09G3/36 ,  G09G3/3258 ,  H01L51/56

Abstract: A display device and a method of manufacturing the display device are provided. The display device includes a first display layer disposed on a surface of a display substrate and including a display element, a power supply unit that supplies a power signal to the display element, and a signal controller that supplies an image signal to the display element. The display element includes a base member, a pixel disposed on a surface of the base member, a driving circuit that provides a pixel driving signal to the pixel, a first transreceiver that receives the power signal and transmits the power signal to the driving circuit, and a second transreceiver that receives the image signal and transmits the image signal to the driving circuit.

公开(公告)号：US11195880B2

公开(公告)日：2021-12-07

申请号：US16744106

申请日：2020-01-15

Applicant: Samsung Display Co., Ltd.

Inventor： Takayuki Fukasawa

IPC: H01L27/32 ,  H01L25/04 ,  H01L25/16 ,  H01L51/56 ,  H01L51/00

Abstract: A display apparatus includes a substrate comprising a first pixel region and a second pixel region adjacent to the first pixel region; a circuit device layer on the substrate; a first light-emitting device module on the circuit device layer, the first light-emitting device module comprising a first light-emitting device overlapping the first pixel region to display a first color; and a second light-emitting device module on the first light-emitting device module, the second light-emitting device module having a first pixel penetration hole overlapping the first pixel region, the second light-emitting device module further comprising a second light-emitting device overlapping the second pixel region to display a second color different from the first color.

公开(公告)号：US09722089B2

公开(公告)日：2017-08-01

申请号：US14482413

申请日：2014-09-10

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Yeon Keon Moon ,  Sang Woo Sohn ,  Katsushi Kishimoto ,  Takayuki Fukasawa ,  Sang Won Shin

IPC: H01L29/786 ,  H01L29/66 ,  H01L21/02 ,  C23C14/08 ,  C23C14/34

CPC classification number: H01L29/7869 ,  C23C14/083 ,  C23C14/086 ,  C23C14/3464 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02581 ,  H01L21/02631 ,  H01L29/66969

Abstract: A thin film transistor array panel includes a substrate and a gate line disposed on the substrate. The gate line includes a gate electrode. A gate insulating layer is disposed on the gate line. An oxide semiconductor layer is disposed on the gate insulating layer. The oxide semiconductor layer at least partially overlaps the gate electrode. A data line is disposed on the oxide semiconductor layer. The data line includes a source electrode and a drain electrode facing the source electrode. The oxide semiconductor layer includes tungsten, indium, zinc, or tin.

公开(公告)号：US09484200B2

公开(公告)日：2016-11-01

申请号：US14049422

申请日：2013-10-09

Applicant: Samsung Display Co., Ltd.

Inventor： Katsushi Kishimoto ,  Takayuki Fukasawa

IPC: H01L21/00 ,  H01L29/78 ,  H01L21/02 ,  H01L29/786 ,  H01L29/66 ,  C23C14/34

CPC classification number: H01L21/02631 ,  C23C14/3414 ,  H01L21/02565 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78693

Abstract: A thin film transistor includes a gate electrode, a source electrode, a drain electrode disposed on the same layer as the source electrode and facing the source electrode, an oxide semiconductor layer disposed between the gate electrode and the source electrode or the drain electrode, and a gate insulating layer disposed between the gate electrode and the source electrode or the drain electrode, in which the oxide semiconductor layer includes thallium and at least one of indium, zinc, tin, and gallium. Also an oxide sputtering target including: an oxide including thallium (Tl); and at least one of indium, zinc, tin, and gallium.

Abstract translation: 薄膜晶体管包括栅电极，源电极，设置在与源电极相同的层上并面对源电极的漏电极，设置在栅电极和源电极或漏电极之间的氧化物半导体层，以及 栅极绝缘层，其设置在栅电极和源电极或漏电极之间，其中氧化物半导体层包括铊和铟，锌，锡和镓中的至少一种。 还有一种氧化物溅射靶，包括：包括铊（Tl）的氧化物; 以及铟，锌，锡和镓中的至少一种。

公开(公告)号：US09266186B2

公开(公告)日：2016-02-23

申请号：US13714738

申请日：2012-12-14

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Takayuki Fukasawa ,  Klhyuk Kim ,  Ji Hun Kim

IPC: B23K10/00 ,  H01J37/32

CPC classification number: B23K10/00 ,  H01J37/32091 ,  H01J37/32137 ,  H01J37/32532

Abstract: A substrate-treating apparatus includes a process chamber including a space therein, a lower electrode which is in the space of the process chamber and supports the substrate, an upper electrode which faces the lower electrode in the process chamber, a high frequency supply line which includes a feed point which applies a high frequency power to the lower electrode, and a modulator which asymmetrically supplies a dielectric substance to a lower portion of the lower electrode with reference to a center portion of the lower electrode.

Abstract translation: 基板处理装置包括其中包括空间的处理室，位于处理室的空间中并支撑基板的下电极，与处理室中的下电极相对的上电极，高频电源线， 包括向下部电极施加高频电力的馈电点，以及相对于下部电极的中心部分将介电物质非对称地供给到下部电极的下部的调制器。