SEMICONDUCTOR TEST DEVICE WITH HEATING CIRCUIT
    12.
    发明申请
    SEMICONDUCTOR TEST DEVICE WITH HEATING CIRCUIT 有权
    具有加热电路的半导体测试装置

    公开(公告)号:US20070168818A1

    公开(公告)日:2007-07-19

    申请号:US11673714

    申请日:2007-02-12

    CPC classification number: G01R31/2877 G01R31/2856

    Abstract: A semiconductor test device includes a test circuit having contacts for applying an electrical signal and measuring electrical parameters of the test circuit. The semiconductor test device also includes an integrally formed heating circuit comprising at least one circuit meander positioned adjacent the test circuit for raising a temperature within a portion of the test circuit.

    Abstract translation: 半导体测试装置包括具有用于施加电信号和测量测试电路的电参数的触点的测试电路。 半导体测试装置还包括整体形成的加热电路,其包括邻近测试电路定位的至少一个电路弯道,用于升高测试电路的一部分内的温度。

    Power learning security in wireless routers
    15.
    发明授权
    Power learning security in wireless routers 有权
    无线路由器的电力学习安全

    公开(公告)号:US07948914B2

    公开(公告)日:2011-05-24

    申请号:US12322028

    申请日:2009-01-28

    CPC classification number: H04W48/04 H04W12/06 H04W64/00

    Abstract: In described embodiments, elements of a wireless home network employ learned power security for the network. An access point, router, or other wireless base station emits and receives signals having corresponding signal strengths. Wireless devices coupled to the base station through a radio link are moved through the home network at boundary points of the home and the signal strength is measured at each device and communicated to the base station. Based on the signal strength information from the emitted signals measured at the boundary points and/or from measured signal strength information of signals received from the boundary points, the base station determines a network secure area. The base station declines permission of devices attempting to use or join the home network that exhibit signal strength characteristics less than boundary values for the network secure area.

    Abstract translation: 在所描述的实施例中,无线家庭网络的元件采用学习的网络安全性。 接入点,路由器或其他无线基站发射和接收具有相应信号强度的信号。 通过无线电链路耦合到基站的无线设备在家庭的边界点移动通过家庭网络,并且在每个设备处测量信号强度并将其传送到基站。 基于从边界点测量的发射信号的信号强度信息和/或从边界点接收的信号的测量信号强度信息,基站确定网络安全区域。 基站拒绝尝试使用或加入家庭网络的设备的权限,这些设备的信号强度特性小于网络安全区域的边界值。

    Receipt Translation for Vouchering
    16.
    发明申请
    Receipt Translation for Vouchering 审中-公开
    收据翻译

    公开(公告)号:US20100250234A1

    公开(公告)日:2010-09-30

    申请号:US12413958

    申请日:2009-03-30

    CPC classification number: G06F17/289

    Abstract: In described embodiments, a point of sale system, such as a cash register, provides for translation from standard language to desired native language on a receipt. Translation might be initiated through user (e.g., purchaser) input, manually or from a credit card, for example, and translation is accomplished through a database accessed by the point of sale system. Consequently, the point of sale system provides at least one receipt to the purchaser that identifies purchases as line item descriptions, and, in some cases, the price paid for each line item, in the purchaser's native language that might be used, for example, to accurately prepare vouchers.

    Abstract translation: 在所描述的实施例中,诸如收银机的销售点系统在收据上提供从标准语言到期望母语的翻译。 可以例如通过用户(例如,购买者)手动地或从信用卡输入翻译,并且通过由销售点系统访问的数据库来实现翻译。 因此,销售点系统向购买者提供至少一个识别订单项目描述的收货单,并且在某些情况下,以可能使用的购买者本地语言为每个行项目支付的价格,例如, 准确准备优惠券。

    Interconnect structure including tungsten nitride and a method of manufacture therefor
    19.
    发明申请
    Interconnect structure including tungsten nitride and a method of manufacture therefor 审中-公开
    包括氮化钨的互连结构及其制造方法

    公开(公告)号:US20050269709A1

    公开(公告)日:2005-12-08

    申请号:US10860621

    申请日:2004-06-03

    Abstract: The present invention provides an interconnect structure, a method of manufacture therefor, and an integrated circuit including the same. The interconnect structure, among other elements, may include a tungsten nitride layer located within an opening in a dielectric layer, and a conductive plug located over the tungsten nitride layer and within the opening. Thus, in certain embodiments the present invention is free of a titanium/titanium nitride layer, and any defects associated with those layers.

    Abstract translation: 本发明提供一种互连结构,其制造方法以及包括该互连结构的集成电路。 互连结构以及其它元件可以包括位于电介质层中的开口内的氮化钨层和位于氮化钨层上方和开口内的导电插塞。 因此,在某些实施方案中,本发明不含钛/氮化钛层,以及与这些层相关的任何缺陷。

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