Abstract:
A semiconductor package includes a substrate, a first electronic component, a first conductive layer, a first pillar layer and a first package body. The first electronic component is disposed on the substrate. The first pillar layer connects the first conductive layer and the substrate. The first package body encapsulates the first conductive layer, the first pillar layer and the first electronic component. The first conductive layer is embedded in the first package body.
Abstract:
A semiconductor package includes a package substrate, a first electronic component and a second package body. The package substrate includes a first conductive layer, a first pillar layer, a first package body and a second conductive layer, wherein the first pillar layer is formed on the first conductive layer, the first package body encapsulates the first conductive layer and the first pillar layer, and the second conductive layer electrically connects to the first pillar layer. The first electronic component is disposed above the second conductive layer of the package substrate. The second package body encapsulates the first electronic component and the second conductive layer.
Abstract:
A graphics processing unit (GPU) renders graphical objects into a group of pixels and stores the pixels in an on-chip buffer on the same chip as the GPU. Each pixel has an alpha value that indicates transparency of the pixel. The GPU reads the alpha value of each pixel from the on-chip buffer. According to alpha values of the group of pixels, the GPU generates an alpha hint in the system memory for the group of pixels. The alpha hint represents an aggregate of the alpha values of the group of pixels. The GPU then stores the group of pixels into a frame buffer in the system memory.
Abstract:
A semiconductor package includes a substrate, a first electronic component, a first conductive layer, a first pillar layer and a first package body. The first electronic component is disposed on the substrate. The first pillar layer connects the first conductive layer and the substrate. The first package body encapsulates the first conductive layer, the first pillar layer and the first electronic component. The first conductive layer is embedded in the first package body.
Abstract:
A graphic processing circuit with binning rendering and associated pre-depth processing method is provided. Firstly, a first depth data of a first primitive corresponding to a specified tile is received. Then, the pre-depth data corresponding to the specified tile is read from a pre-Z buffer. If the first depth data is not larger than the pre-depth data and the first primitive is an opaque primitive, the pre-depth data is updated with the first depth data. If the first depth data is not larger than the pre-depth data and the first primitive is a translucent primitive, an uncertainty ordering range is defined according to the first depth data and the pre-depth data, and the pre-depth data is updated with the uncertainty ordering range.
Abstract:
A semiconductor package with reduced warpage problem is provided, including: a circuit board, having opposing first and second surfaces; a semiconductor chip, formed over a center portion of the first surface of the circuit board; a spacer, formed over a center portion of the semiconductor chip, having a second cross sectional dimension less than that of the first cross sectional dimension; a non-planar shaped heat spreading layer, formed over the spacer; an encapsulant layer, formed, over the circuit board, filling spaces between the non-planar shaped heat spreading layer and the circuit board; and a plurality of solder balls, formed over the second surface of the circuit board.
Abstract:
A package on package (POP) structure includes at least a first package and a second package. The first package has a plurality of pillar bump pins. The second package has a plurality of pads connected to the pillar bump pins, respectively. A method of forming a package on package (POP) structure includes at least the following steps: providing a first package with a plurality of pillar bump pins; providing a second package with a plurality of pads; and forming the POP structure by connecting the pillar bump pins to the pads.
Abstract:
A semiconductor package with reduced warpage problem is provided, including: a circuit board, having opposing first and second surfaces; a semiconductor chip, formed over a center portion of the first surface of the circuit board, having a first cross sectional dimension; a spacer, formed over a center portion of the semiconductor chip, having a second cross sectional dimension less than that of the first cross sectional dimension; an encapsulant layer, formed over the circuit board, covering the semiconductor chip and surrounding the spacer; a heat spreading layer, formed over the encapsulant layer and the spacer; and a plurality of solder balls, formed over the second surface of the circuit board.
Abstract:
A method for performing automatic activation control regarding VRS and associated apparatus are provided. The method applicable to a processing circuit may include: utilizing a rendering classifier to intercept at least one set of original graphic commands on a command path to obtain at least one rendering property, for classifying rendering corresponding to the at least one set of original graphic commands; utilizing the rendering classifier to classify the rendering into at least one predetermined rendering type among multiple predetermined rendering types according to the at least one rendering property, in order to determine at least one shading rate corresponding to the at least one predetermined rendering type for the rendering; and utilizing a shading rate controller to control the processing circuit to selectively activate a VRS function of the processing circuit, for rendering at the at least one shading rate corresponding to the at least one predetermined rendering type.
Abstract:
A semiconductor package structure includes a semiconductor die, a redistribution layer (RDL) structure, a protective insulating layer, and a conductive structure. The semiconductor die has a first surface, a second surface opposite the first surface, and a third surface adjoined between the first surface and the second surface. The RDL structure is on the first surface of the semiconductor die and is electrically coupled to the semiconductor die. The protective insulating layer covers the RDL structure, the second surface and the third surface of the semiconductor die. The conductive structure passes through the protective insulating layer and is electrically coupled to the RDL structure.