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公开(公告)号：US09891177B2
公开(公告)日：2018-02-13
申请号：US14506321
申请日：2014-10-03
Applicant: KLA-Tencor Corporation
Inventor： Jijen Vazhaeparambil , Guoheng Zhao , Daniel Kavaldjiev , Anatoly Romanovsky , Ivan Maleev , Christian Wolters , Stephen Biellak , Bret Whiteside , Donald Pettibone , Yung-Ho Alex Chuang , David W. Shortt
IPC: G01N21/88 , G01N21/95 , G06T7/00 , G01N21/956
CPC classification number: G01N21/8851 , G01N21/9501 , G01N21/956 , G01N2021/8887 , G01N2021/8896 , G01N2201/06113 , G01N2201/103 , G01N2201/12 , G06T7/0004 , G06T2207/10004 , G06T2207/30148
Abstract: A wafer scanning system includes imaging collection optics to reduce the effective spot size. Smaller spot size decreases the number of photons scattered by the surface proportionally to the area of the spot. Air scatter is also reduced. TDI is used to produce a wafer image based on a plurality of image signals integrated over the direction of linear motion of the wafer. An illumination system floods the wafer with light, and the task of creating the spot is allocated to the imaging collection optics.
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公开(公告)号：US20160097727A1
公开(公告)日：2016-04-07
申请号：US14506321
申请日：2014-10-03
Applicant: KLA-Tencor Corporation
Inventor： Jijen Vazhaeparambil , Guoheng Zhao , Daniel Kavaldjiev , Anatoly Romanovsky , Ivan Maleev , Christian Wolters , Stephen Biellak , Bret Whiteside , Donald Pettibone , Yung-Ho Alex Chuang , David W. Shortt
CPC classification number: G01N21/8851 , G01N21/9501 , G01N21/956 , G01N2021/8887 , G01N2021/8896 , G01N2201/06113 , G01N2201/103 , G01N2201/12 , G06T7/0004 , G06T2207/10004 , G06T2207/30148
Abstract: A wafer scanning system includes imaging collection optics to reduce the effective spot size. Smaller spot size decreases the number of photons scattered by the surface proportionally to the area of the spot. Air scatter is also reduced. TDI is used to produce a wafer image based on a plurality of image signals integrated over the direction of linear motion of the wafer. An illumination system floods the wafer with light, and the task of creating the spot is allocated to the imaging collection optics.
Abstract translation: 晶片扫描系统包括成像采集光学器件以减少有效光斑尺寸。 较小的斑点尺寸使得表面散射的光子数量与斑点的面积成比例地减小。 空气散射也减少。 TDI用于基于在晶片的线性运动方向上积分的多个图像信号产生晶片图像。 照明系统用光淹没晶片，创建光斑的任务被分配给成像采集光学元件。
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公开(公告)号：US09297769B1
公开(公告)日：2016-03-29
申请号：US14611874
申请日：2015-02-02
Applicant: KLA-Tencor Corporation
Inventor： Andrew V. Hill , David W. Shortt
CPC classification number: G01N21/8851 , G01N21/8803 , G01N21/9501 , G01N2021/8887 , G06T7/0004 , G06T2207/30148 , H04N5/217 , H04N5/23296 , H04N5/357 , H04N5/37206
Abstract: The invention may be embodied in a time delay integration (TDI) based sensor wafer inspection system that introduces controlled blur into the sampled image to suppress high spectral frequencies and thereby mitigate the occurrence of aliasing in the sampled image. Image blur may be introduced in the scan direction by desynchronizing the image motion (scan rate) from the charge transfer rate within the TDI sensor (sample clock rate). The scan rate may be desynchronized from the TDI sample clock rate by altering the speed of wafer movement, the sample clock rate, or the magnification of the imaging optics. Image blur may be introduced in the cross-scan direction by imparting a small alignment difference between the direction of image motion (image scan direction) and the direction that charges transfer within the TDI sensor (sensor direction).
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14.发明授权Detecting defects on a wafer using defect-specific and multi-channel information 有权使用缺陷特定和多通道信息检测晶片上的缺陷公开(公告)号：US09092846B2
公开(公告)日：2015-07-28
申请号：US14169161
申请日：2014-01-31
Applicant: KLA-Tencor Corporation
Inventor： Kenong Wu , Lisheng Gao , Grace Hsiu-Ling Chen , David W. Shortt
CPC classification number: G06T7/0008 , G01N21/8806 , G01N21/8851 , G01N21/9501 , G01N21/956 , G01N2021/8822 , G01N2021/8848 , G06T7/001 , G06T2207/30148 , H01L22/12 , H01L22/34
Abstract: Methods and systems for detecting defects on a wafer using defect-specific and multi-channel information are provided. One method includes acquiring information for a target on a wafer. The target includes a pattern of interest (POI) formed on the wafer and a known defect of interest (DOI) occurring proximate to or in the POI. The method also includes detecting the known DOI in target candidates by identifying potential DOI locations based on images of the target candidates acquired by a first channel of an inspection system and applying one or more detection parameters to images of the potential DOI locations acquired by a second channel of the inspection system. Therefore, the image(s) used for locating potential DOI locations and the image(s) used for detecting defects can be different.
Abstract translation: 提供了使用缺陷特定和多信道信息检测晶片上的缺陷的方法和系统。 一种方法包括获取晶片上目标的信息。 目标包括形成在晶片上的感兴趣模式（POI）和在POI附近或在POI中出现的已知感兴趣缺陷（DOI）。 该方法还包括通过基于由检查系统的第一通道获取的目标候选者的图像来识别潜在的DOI位置来检测目标候选中的已知DOI，并将一个或多个检测参数应用于由第二个所获取的潜在DOI位置的图像 检查系统通道。 因此，用于定位潜在DOI位置的图像和用于检测缺陷的图像可以不同。
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公开(公告)号：US10317347B2
公开(公告)日：2019-06-11
申请号：US14511067
申请日：2014-10-09
Applicant: KLA-Tencor Corporation
Inventor： Stefano Palomba , Pavel Kolchin , Mikhail Haurylau , Robert M. Danen , David W. Shortt
Abstract: Systems and methods for determining information for defects on a wafer are provided. One system includes an illumination subsystem configured to direct light having one or more illumination wavelengths to a wafer. The one or more illumination wavelengths are selected to cause fluorescence from one or more materials on the wafer without causing fluorescence from one or more other materials on the wafer. The system also includes a detection subsystem configured to detect only the fluorescence from the one or more materials or to detect non-fluorescent light from the wafer without detecting the fluorescence from the one or more materials. In addition, the system includes a computer subsystem configured to determine information for defects on the wafer using output generated by the detection subsystem responsive to the detected fluorescence or the detected non-fluorescent light.
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Patent Agency Ranking
16.发明授权System and method for imaging a sample with a laser sustained plasma illumination output 有权用激光持续等离子体照明输出成像样品的系统和方法公开(公告)号：US09558858B2
公开(公告)日：2017-01-31
申请号：US14459155
申请日：2014-08-13
Applicant: KLA-Tencor Corporation
Inventor： David W. Shortt , Steven R. Lange , Matthew Derstine , Kenneth P. Gross , Wei Zhao , Ilya Bezel , Anatoly Shchemelinin
CPC classification number: G21K5/00
Abstract: The inspection of a sample with VUV light from a laser sustained plasma includes generating pumping illumination including a first selected wavelength, or range of wavelength, containing a volume of gas suitable for plasma generation, generating broadband radiation including a second selected wavelength, or range of wavelengths, by forming a plasma within the volume of gas by focusing the pumping illumination into the volume of gas, illuminating a surface of a sample with the broadband radiation emitted from the plasma via an illumination pathway, collecting illumination from a surface of the sample, focusing the collected illumination onto a detector via a collection pathway to form an image of at least a portion of the surface of the sample and purging the illumination pathway and/or the collection pathway with a selected purge gas.
Abstract translation: 使用来自激光持续等离子体的VUV光检测样品包括产生包括第一选定波长或波长范围的泵浦照明，其包含适于等离子体产生的气体体积，产生包括第二选定波长的宽度辐射或范围 通过将泵浦照明聚焦到气体体积中，通过将等离子体聚焦在气体体积中，利用从等离子体经由照明路径发射的宽带辐射来照射样品的表面，从样品的表面收集照明， 通过收集路径将收集的照明聚焦到检测器上，以形成样品表面的至少一部分的图像，并用所选择的吹扫气体吹扫照明路径和/或收集路径。
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17.发明授权Method and system for controlling convective flow in a light-sustained plasma 有权用于控制光持久等离子体中对流的方法和系统公开(公告)号：US09390902B2
公开(公告)日：2016-07-12
申请号：US14224945
申请日：2014-03-25
Applicant: KLA-Tencor Corporation
Inventor： Ilya Bezel , Anatoly Shchemelinin , Matthew Derstine , Kenneth P. Gross , David W. Shortt , Wei Zhao , Anant Chimmalgi , Jincheng Wang
IPC: H01J65/00
CPC classification number: H01J65/042 , H01J61/28 , H01J61/523 , H01J65/00 , H05H1/24
Abstract: A system for controlling convective flow in a light-sustained plasma includes an illumination source configured to generate illumination, a plasma cell including a bulb for containing a volume of gas, a collector element arranged to focus illumination from the illumination source into the volume of gas in order to generate a plasma within the volume of gas contained within the bulb. Further, the plasma cell is disposed within a concave region of the collector element, where the collector element includes an opening for propagating a portion of a plume of the plasma to a region external to the concave region of the collect element.
Abstract translation: 用于控制光持久等离子体中的对流的系统包括被配置为产生照明的照明源，包括用于容纳一定体积的气体的灯泡的等离子体单元，被布置成将来自照明源的照明聚焦到气体体积中的集电器元件 以便在容纳在灯泡内的气体的体积内产生等离子体。 此外，等离子体单元设置在集电器元件的凹入区域内，其中集电器元件包括用于将等离子体的一部分羽流传播到收集元件的凹部区域外部的区域的开口。
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公开(公告)号：US20150123014A1
公开(公告)日：2015-05-07
申请号：US14511067
申请日：2014-10-09
Applicant: KLA-Tencor Corporation
Inventor： Stefano Palomba , Pavel Kolchin , Mikhail Haurylau , Robert M. Danen , David W. Shortt
CPC classification number: G01N21/9501 , G01N21/64 , G01N21/6489 , G01N21/94 , G01N2201/0612 , G01N2201/12
Abstract: Systems and methods for determining information for defects on a wafer are provided. One system includes an illumination subsystem configured to direct light having one or more illumination wavelengths to a wafer. The one or more illumination wavelengths are selected to cause fluorescence from one or more materials on the wafer without causing fluorescence from one or more other materials on the wafer. The system also includes a detection subsystem configured to detect only the fluorescence from the one or more materials or to detect non-fluorescent light from the wafer without detecting the fluorescence from the one or more materials. In addition, the system includes a computer subsystem configured to determine information for defects on the wafer using output generated by the detection subsystem responsive to the detected fluorescence or the detected non-fluorescent light.
Abstract translation: 提供了用于确定晶片上缺陷信息的系统和方法。 一个系统包括被配置为将具有一个或多个照明波长的光引导到晶片的照明子系统。 选择一个或多个照明波长以在晶片上产生来自一个或多个材料的荧光，而不引起来自晶片上的一种或多种其它材料的荧光。 该系统还包括检测子系统，该检测子系统被配置为仅检测来自该一种或多种材料的荧光，或者检测来自晶片的非荧光，而不检测来自该一种或多种材料的荧光。 另外，该系统包括计算机子系统，该计算机子系统被配置为使用响应于检测到的荧光或检测到的非荧光灯的检测子系统产生的输出来确定晶片上缺陷的信息。
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19.发明申请System and Method for Imaging a Sample with a Laser Sustained Plasma Illumination Output 有权用激光持续等离子体照明输出成像样品的系统和方法公开(公告)号：US20150048741A1
公开(公告)日：2015-02-19
申请号：US14459155
申请日：2014-08-13
Applicant: KLA-Tencor Corporation
Inventor： David W. Shortt , Steven R. Lange , Matthew Derstine , Kenneth P. Gross , Wei Zhao , Ilya Bezel , Anatoly Shchemelinin
IPC: H05H1/46
CPC classification number: G21K5/00
Abstract: The inspection of a sample with VUV light from a laser sustained plasma includes generating pumping illumination including a first selected wavelength, or range of wavelength, containing a volume of gas suitable for plasma generation, generating broadband radiation including a second selected wavelength, or range of wavelengths, by forming a plasma within the volume of gas by focusing the pumping illumination into the volume of gas, illuminating a surface of a sample with the broadband radiation emitted from the plasma via an illumination pathway, collecting illumination from a surface of the sample, focusing the collected illumination onto a detector via a collection pathway to form an image of at least a portion of the surface of the sample and purging the illumination pathway and/or the collection pathway with a selected purge gas.
Abstract translation: 使用来自激光持续等离子体的VUV光检测样品包括产生包括第一选定波长或波长范围的泵浦照明，其包含适于等离子体产生的气体体积，产生包括第二选定波长的宽度辐射或范围 通过将泵浦照明聚焦到气体体积中，通过将等离子体聚焦在气体体积中，利用从等离子体经由照明路径发射的宽带辐射来照射样品的表面，从样品的表面收集照明， 通过收集路径将收集的照明聚焦到检测器上，以形成样品表面的至少一部分的图像，并用所选择的吹扫气体吹扫照明路径和/或收集路径。
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20.发明申请Detecting Defects on a Wafer Using Defect-Specific and Multi-Channel Information 有权使用缺陷特定和多通道信息检测晶片上的缺陷公开(公告)号：US20140219544A1
公开(公告)日：2014-08-07
申请号：US14169161
申请日：2014-01-31
Applicant: KLA-TENCOR CORPORATION
Inventor： Kenong Wu , Lisheng Gao , Grace Hsiu-Ling Chen , David W. Shortt
IPC: G06T7/00
CPC classification number: G06T7/0008 , G01N21/8806 , G01N21/8851 , G01N21/9501 , G01N21/956 , G01N2021/8822 , G01N2021/8848 , G06T7/001 , G06T2207/30148 , H01L22/12 , H01L22/34
Abstract: Methods and systems for detecting defects on a wafer using defect-specific and multi-channel information are provided. One method includes acquiring information for a target on a wafer. The target includes a pattern of interest (POI) formed on the wafer and a known defect of interest (DOI) occurring proximate to or in the POI. The method also includes detecting the known DOI in target candidates by identifying potential DOI locations based on images of the target candidates acquired by a first channel of an inspection system and applying one or more detection parameters to images of the potential DOI locations acquired by a second channel of the inspection system. Therefore, the image(s) used for locating potential DOI locations and the image(s) used for detecting defects can be different.
Abstract translation: 提供了使用缺陷特定和多信道信息检测晶片上的缺陷的方法和系统。 一种方法包括获取晶片上目标的信息。 目标包括形成在晶片上的感兴趣模式（POI）和在POI附近或在POI中出现的已知感兴趣缺陷（DOI）。 该方法还包括通过基于由检查系统的第一通道获取的目标候选者的图像来识别潜在的DOI位置来检测目标候选中的已知DOI，并将一个或多个检测参数应用于由第二个所获取的潜在DOI位置的图像 检查系统通道。 因此，用于定位潜在DOI位置的图像和用于检测缺陷的图像可以不同。
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