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    Detecting Defects on a Wafer Using Defect-Specific and Multi-Channel Information
    2.
    发明申请
    Detecting Defects on a Wafer Using Defect-Specific and Multi-Channel Information 有权
    使用缺陷特定和多通道信息检测晶片上的缺陷

    公开(公告)号：US20160027165A1

    公开(公告)日：2016-01-28

    申请号：US14811409

    申请日：2015-07-28

    Applicant: KLA-Tencor Corporation

    Inventor： Kenong Wu ,  Lisheng Gao ,  Grace Hsiu-Ling Chen ,  David W. Shortt

    IPC: G06T7/00 ,  H01L21/66 ,  G01N21/88 ,  G01N21/95 ,  G01N21/956

    CPC classification number: G06T7/0008 ,  G01N21/8806 ,  G01N21/8851 ,  G01N21/9501 ,  G01N21/956 ,  G01N2021/8822 ,  G01N2021/8848 ,  G06T7/001 ,  G06T2207/30148 ,  H01L22/12 ,  H01L22/34

    Abstract: Methods and systems for detecting defects on a wafer using defect-specific and multi-channel information are provided. One method includes acquiring information for a target on a wafer. The target includes a pattern of interest (POI) formed on the wafer and a known defect of interest (DOI) occurring proximate to or in the POI. The method also includes detecting the known DOI in target candidates by identifying potential DOI locations based on images of the target candidates acquired by a first channel of an inspection system and applying one or more detection parameters to images of the potential DOI locations acquired by a second channel of the inspection system. Therefore, the image(s) used for locating potential DOI locations and the image(s) used for detecting defects can be different.

    Abstract translation: 提供了使用缺陷特定和多信道信息检测晶片上的缺陷的方法和系统。 一种方法包括获取晶片上目标的信息。 目标包括形成在晶片上的感兴趣模式（POI）和在POI附近或在POI中出现的已知感兴趣缺陷（DOI）。 该方法还包括通过基于由检查系统的第一通道获取的目标候选者的图像来识别潜在的DOI位置来检测目标候选中的已知DOI，并将一个或多个检测参数应用于由第二个所获取的潜在DOI位置的图像 检查系统通道。 因此，用于定位潜在DOI位置的图像和用于检测缺陷的图像可以不同。

    Method and System for Controlling Convective Flow in a Light-Sustained Plasma
    3.
    发明申请
    Method and System for Controlling Convective Flow in a Light-Sustained Plasma 有权
    用于控制轻维持等离子体中对流的方法和系统

    公开(公告)号：US20140291546A1

    公开(公告)日：2014-10-02

    申请号：US14224945

    申请日：2014-03-25

    Applicant: KLA-Tencor Corporation

    Inventor： Ilya Bezel ,  Anatoly Shchemelinin ,  Matthew Derstine ,  Ken Gross ,  David W. Shortt ,  Wei Zhao ,  Anant Chimmalgi ,  Jincheng Wang

    IPC: H05H1/24 ,  H01J65/00

    CPC classification number: H01J65/042 ,  H01J61/28 ,  H01J61/523 ,  H01J65/00 ,  H05H1/24

    Abstract: A system for controlling convective flow in a light-sustained plasma includes an illumination source configured to generate illumination, a plasma cell including a bulb for containing a volume of gas, a collector element arranged to focus illumination from the illumination source into the volume of gas in order to generate a plasma within the volume of gas contained within the bulb. Further, the plasma cell is disposed within a concave region of the collector element, where the collector element includes an opening for propagating a portion of a plume of the plasma to a region external to the concave region of the collect element.

    Abstract translation: 用于控制光持久等离子体中的对流的系统包括被配置为产生照明的照明源，包括用于容纳一定体积的气体的灯泡的等离子体单元，被布置成将来自照明源的照明聚焦到气体体积中的集电器元件 以便在容纳在灯泡内的气体的体积内产生等离子体。 此外，等离子体单元设置在集电器元件的凹入区域内，其中集电器元件包括用于将等离子体的一部分羽流传播到收集元件的凹部区域外部的区域的开口。

    Determining Information for Defects on Wafers
    4.
    发明申请
    Determining Information for Defects on Wafers 审中-公开

    公开(公告)号：US20190257768A1

    公开(公告)日：2019-08-22

    申请号：US16400644

    申请日：2019-05-01

    Applicant: KLA-Tencor Corporation

    Inventor： Stefano Palomba ,  Pavel Kolchin ,  Mikhail Haurylau ,  Robert M. Danen ,  David W. Shortt

    IPC: G01N21/95 ,  G01N21/94 ,  G01N21/64

    Abstract: Systems and methods for determining information for defects on a wafer are provided. One system includes an illumination subsystem configured to direct light having one or more illumination wavelengths to a wafer. The one or more illumination wavelengths are selected to cause fluorescence from one or more materials on the wafer without causing fluorescence from one or more other materials on the wafer. The system also includes a detection subsystem configured to detect only the fluorescence from the one or more materials or to detect non-fluorescent light from the wafer without detecting the fluorescence from the one or more materials. In addition, the system includes a computer subsystem configured to determine information for defects on the wafer using output generated by the detection subsystem responsive to the detected fluorescence or the detected non-fluorescent light.

    Detecting defects on a wafer using defect-specific and multi-channel information
    7.
    发明授权
    Detecting defects on a wafer using defect-specific and multi-channel information 有权
    使用缺陷特定和多通道信息检测晶片上的缺陷

    公开(公告)号：US09552636B2

    公开(公告)日：2017-01-24

    申请号：US14811409

    申请日：2015-07-28

    Applicant: KLA-Tencor Corporation

    Inventor： Kenong Wu ,  Lisheng Gao ,  Grace Hsiu-Ling Chen ,  David W. Shortt

    IPC: G06K9/00 ,  G06T7/00 ,  G01N21/95 ,  H01L21/66 ,  G01N21/88 ,  G01N21/956

    CPC classification number: G06T7/0008 ,  G01N21/8806 ,  G01N21/8851 ,  G01N21/9501 ,  G01N21/956 ,  G01N2021/8822 ,  G01N2021/8848 ,  G06T7/001 ,  G06T2207/30148 ,  H01L22/12 ,  H01L22/34

    Abstract: Methods and systems for detecting defects on a wafer using defect-specific and multi-channel information are provided. One method includes acquiring information for a target on a wafer. The target includes a pattern of interest (POI) formed on the wafer and a known defect of interest (DOI) occurring proximate to or in the POI. The method also includes detecting the known DOI in target candidates by identifying potential DOI locations based on images of the target candidates acquired by a first channel of an inspection system and applying one or more detection parameters to images of the potential DOI locations acquired by a second channel of the inspection system. Therefore, the image(s) used for locating potential DOI locations and the image(s) used for detecting defects can be different.

    Abstract translation: 提供了使用缺陷特定和多信道信息检测晶片上的缺陷的方法和系统。 一种方法包括获取晶片上目标的信息。 目标包括形成在晶片上的感兴趣模式（POI）和在POI附近或在POI中出现的已知感兴趣缺陷（DOI）。 该方法还包括通过基于由检查系统的第一通道获取的目标候选者的图像来识别潜在的DOI位置来检测目标候选中的已知DOI，并将一个或多个检测参数应用于由第二个所获取的潜在DOI位置的图像 检查系统通道。 因此，用于定位潜在DOI位置的图像和用于检测缺陷的图像可以不同。

    Method and System for Controlling Convective Flow in a Light-Sustained Plasma
    8.
    发明申请
    Method and System for Controlling Convective Flow in a Light-Sustained Plasma 有权
    用于控制轻维持等离子体中对流的方法和系统

    公开(公告)号：US20160322211A1

    公开(公告)日：2016-11-03

    申请号：US15207136

    申请日：2016-07-11

    Applicant: KLA-Tencor Corporation

    Inventor： Ilya Bezel ,  Anatoly Shchemelinin ,  Matthew Derstine ,  Kenneth P. Gross ,  David W. Shortt ,  Wei Zhao ,  Anant Chimmalgi ,  Jincheng Wang

    IPC: H01J65/04 ,  H05H1/24

    CPC classification number: H01J65/042 ,  H01J61/28 ,  H01J61/523 ,  H01J65/00 ,  H05H1/24

    Abstract: A system for controlling convective flow in a light-sustained plasma includes an illumination source configured to generate illumination, a plasma cell including a bulb for containing a volume of gas, a collector element arranged to focus illumination from the illumination source into the volume of gas in order to generate a plasma within the volume of gas contained within the bulb. Further, the plasma cell is disposed within a concave region of the collector element, where the collector element includes an opening for propagating a portion of a plume of the plasma to a region external to the concave region of the collect element.

    Abstract translation: 用于控制光持久等离子体中的对流的系统包括被配置为产生照明的照明源，包括用于容纳一定体积的气体的灯泡的等离子体单元，被布置成将来自照明源的照明聚焦到气体体积中的集电器元件 以便在容纳在灯泡内的气体的体积内产生等离子体。 此外，等离子体单元设置在集电器元件的凹入区域内，其中集电器元件包括用于将等离子体的一部分羽流传播到收集元件的凹部区域外部的区域的开口。

    DEFECT DETECTION USING SURFACE ENHANCED ELECTRIC FIELD
    9.
    发明申请
    DEFECT DETECTION USING SURFACE ENHANCED ELECTRIC FIELD 审中-公开
    使用表面增强电场的缺陷检测

    公开(公告)号：US20150377795A1

    公开(公告)日：2015-12-31

    申请号：US14851887

    申请日：2015-09-11

    Applicant: KLA-Tencor Corporation

    Inventor： Guoheng Zhao ,  David W. Shortt

    IPC: G01N21/94 ,  G01N21/88 ,  G01N21/95

    Abstract: A system and method for inspecting a surface of a wafer. The system includes a source generating an optical beam at a deep ultraviolet wavelength; a solid immersion lens, receiving the optical beam, positioned such that the air gap between the lens and the wafer surface is less than the wavelength, an enhanced electric field being generated at the wafer surface, at least one particle on the wafer receiving the enhanced electric field generating scattered light; a detector receiving the scattered light and generating a corresponding electrical signal; and a processor receiving and analyzing the electrical signal.

    Abstract translation: 一种用于检查晶片表面的系统和方法。 该系统包括产生深紫外波长的光束的源; 固体浸没透镜，接收光束，定位成使得透镜和晶片表面之间的气隙小于波长，在晶片表面产生增强的电场，晶片上的至少一个颗粒接收增强的 电场产生散射光; 接收散射光并产生相应的电信号的检测器; 以及接收和分析电信号的处理器。

    Determining information for defects on wafers
    10.
    发明授权
    Determining information for defects on wafers 有权

    公开(公告)号：US10571407B2

    公开(公告)日：2020-02-25

    申请号：US16400644

    申请日：2019-05-01

    Applicant: KLA-Tencor Corporation

    Inventor： Stefano Palomba ,  Pavel Kolchin ,  Mikhail Haurylau ,  Robert M. Danen ,  David W. Shortt

    IPC: G01N21/95 ,  G01N21/64 ,  G01N21/94

    Abstract: Systems and methods for determining information for defects on a wafer are provided. One system includes an illumination subsystem configured to direct light having one or more illumination wavelengths to a wafer. The one or more illumination wavelengths are selected to cause fluorescence from one or more materials on the wafer without causing fluorescence from one or more other materials on the wafer. The system also includes a detection subsystem configured to detect only the fluorescence from the one or more materials or to detect non-fluorescent light from the wafer without detecting the fluorescence from the one or more materials. In addition, the system includes a computer subsystem configured to determine information for defects on the wafer using output generated by the detection subsystem responsive to the detected fluorescence or the detected non-fluorescent light.

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