Inorganic dies with organic interconnect layers and related structures

    公开(公告)号:US11621192B2

    公开(公告)日:2023-04-04

    申请号:US17338296

    申请日:2021-06-03

    Abstract: Disclosed herein are methods to fabricate inorganic dies with organic interconnect layers and related structures and devices. In some embodiments, an integrated circuit (IC) structure may be formed to include an inorganic die and one or more organic interconnect layers on the inorganic die, wherein the organic interconnect layers include an organic dielectric. An example method includes forming organic interconnect layers over an inorganic interconnect substrate and forming passive components in the organic interconnect layer. The organic interconnect layers comprise a plurality of conductive metal layers through an organic dielectric material. The plurality of conductive metal layers comprises electrical pathways. the passive components are electrically coupled to the electrical pathways.

    CONFORMAL POWER DELIVERY STRUCTURES OF 3D STACKED DIE ASSEMBLIES

    公开(公告)号:US20230098957A1

    公开(公告)日:2023-03-30

    申请号:US17485235

    申请日:2021-09-24

    Abstract: A conformal power delivery structure, a three-dimensional (3D) stacked die assembly, a system including the 3D stacked die assembly, and a method of forming the conformal power delivery structure. The power delivery structure includes a package substrate, a die adjacent to and electrically coupled to the package substrate; a first power plane adjacent the upper surface of the package substrate and electrically coupled thereto; a second power plane at least partially within recesses defined by the first power plane and having a lower surface that conforms with the upper surface of the first power plane; and a dielectric material between the first power plane and the second power plane.

    ACTIVE DEVICE LAYER AT INTERCONNECT INTERFACES

    公开(公告)号:US20220399324A1

    公开(公告)日:2022-12-15

    申请号:US17344348

    申请日:2021-06-10

    Abstract: A die assembly comprising: a first component layer having conductive through-connections in an insulator, a second component layer comprising a die, and an active device layer (ADL) at an interface between the first component layer and the second component layer. The ADL comprises active elements electrically coupled to the first component layer and the second component layer. The die assembly further comprises a bonding layer electrically coupling the ADL to the second component layer. In some embodiments, the die assembly further comprises another ADL at another interface between the first component layer and a package support opposite to the interface. The first component layer may comprise another die having through-substrate vias (TSVs). The die and the another die may be fabricated using different process nodes.

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