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公开(公告)号:US12205902B2
公开(公告)日:2025-01-21
申请号:US17388964
申请日:2021-07-29
Applicant: Intel Corporation
Inventor: Veronica Strong , Aleksandar Aleksov , Henning Braunisch , Brandon Rawlings , Johanna Swan , Shawna Liff
Abstract: An integrated circuit package may be formed including at least one die side integrated circuit device having an active surface electrically attached to an electronic interposer, wherein the at least one die side integrated circuit device is at least partially encased in a mold material layer and wherein a back surface of the at least one die side integrated circuit device is in substantially the same plane as an outer surface of the mold material layer. At least one stacked integrated circuit device may be electrically attached to the back surface of the at least one die side integrated circuit through an interconnection structure formed between the at least one die side integrated circuit device and the at least one stacked integrated circuit device.
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公开(公告)号:US11694951B2
公开(公告)日:2023-07-04
申请号:US17537406
申请日:2021-11-29
Applicant: Intel Corporation
Inventor: Veronica Strong , Aleksandar Aleksov , Brandon Rawlings , Johanna Swan
IPC: H01L29/40 , H01L23/498 , H01L21/48 , H01L23/48 , H01L23/538
CPC classification number: H01L23/49838 , H01L21/481 , H01L21/486 , H01L23/481 , H01L23/49827 , H01L23/5386
Abstract: A device package and a method of forming a device package are described. The device package includes an interposer with interconnects on an interconnect package layer and a conductive layer on the interposer. The device package has dies on the conductive layer, where the package layer includes a zero-misalignment two-via stack (ZM2VS) and a dielectric. The ZM2VS is directly coupled to the interconnect. The ZM2VS may further include the dielectric on a conductive pad, a first via on a first seed, and the first seed on a top surface of the conductive pad, where the first via extends through dielectric. The ZM2VS may also have a conductive trace on dielectric, and a second via on a second seed, the second seed is on the dielectric, where the conductive trace connects to first and second vias, where second via connects to an edge of conductive trace opposite from first via.
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公开(公告)号:US11502037B2
公开(公告)日:2022-11-15
申请号:US16648850
申请日:2017-12-30
Applicant: Intel Corporation
Inventor: Aleksandar Aleksov , Veronica Strong , Brandon Rawlings
IPC: H01L23/12 , H01L23/14 , H01L23/48 , H01L21/00 , H01L21/4763 , H05K1/00 , H01R9/00 , H01L23/538 , H01L23/498 , H01L27/12 , H01L21/48 , H01L21/027 , H01L23/00
Abstract: A device package and a method of forming a device package are described. The device package includes a dielectric on a conductive pad, and a first via on a first seed on a top surface of the conductive pad. The device package further includes a conductive trace on the dielectric, and a second via on a second seed layer on the dielectric. The conductive trace connects to the first via and the second via, where the second via connects to an edge of the conductive trace opposite from the first via. The dielectric may include a photoimageable dielectric or a buildup film. The device package may also include a seed on the dielectric prior to the conductive trace on the dielectric, and a second dielectric on the dielectric, the conductive trace, and the first and second vias, where the second dielectric exposes a top surface of the second via.
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公开(公告)号:US20230197620A1
公开(公告)日:2023-06-22
申请号:US17558304
申请日:2021-12-21
Applicant: Intel Corporation
Inventor: Veronica Strong , Aleksandar Aleksov , Georgios Dogiamis , Telesphor Kamgaing , Neelam Prabhu Gaunkar , Brandon Rawlings
IPC: H01L23/538 , H01L21/48 , H01L25/065
CPC classification number: H01L23/5384 , H01L21/486 , H01L25/0652 , H01L25/0657 , H01L23/49866
Abstract: Methods, systems, apparatus, and articles of manufacture are disclosed for integrated circuit package substrates with high aspect ratio through glass vias. An example microelectronic package including a glass substrate including a via, the via including a high aspect ratio. The example microelectronic package further including a seed layer extending substantially evenly along an inner wall of the via.
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公开(公告)号:US20210358855A1
公开(公告)日:2021-11-18
申请号:US17388964
申请日:2021-07-29
Applicant: Intel Corporation
Inventor: Veronica Strong , Aleksandar Aleksov , Henning Braunisch , Brandon Rawlings , Johanna Swan , Shawna Liff
Abstract: An integrated circuit package may be formed including at least one die side integrated circuit device having an active surface electrically attached to an electronic interposer, wherein the at least one die side integrated circuit device is at least partially encased in a mold material layer and wherein a back surface of the at least one die side integrated circuit device is in substantially the same plane as an outer surface of the mold material layer. At least one stacked integrated circuit device may be electrically attached to the back surface of the at least one die side integrated circuit through an interconnection structure formed between the at least one die side integrated circuit device and the at least one stacked integrated circuit device.
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公开(公告)号:US11101205B2
公开(公告)日:2021-08-24
申请号:US16564168
申请日:2019-09-09
Applicant: Intel Corporation
Inventor: Johanna Swan , Henning Braunisch , Aleksandar Aleksov , Shawna Liff , Brandon Rawlings , Veronica Strong
IPC: H01L23/498 , G03F1/38 , G03F1/54 , G03F1/68
Abstract: An lithographic reticle may be formed comprising a transparent substrate, a substantially opaque mask formed on the transparent substrate that defines at least one exposure window, wherein the at least one exposure window has a first end, a first filter formed on the transparent substrate within the at least one exposure window and abutting the first end thereof, and a second filter formed on the transparent substrate within the at least one exposure window and abutting the first filter, wherein an average transmissivity of the first filter is substantially one half of a transmissivity of the second filter. In another embodiment, the at least one exposure window includes a third filter abutting the second end and is adjacent the second filter. Further embodiments of the present description include interconnection structures and systems fabricated using the lithographic reticle.
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公开(公告)号:US10998272B2
公开(公告)日:2021-05-04
申请号:US16573943
申请日:2019-09-17
Applicant: Intel Corporation
Inventor: Aleksandar Aleksov , Henning Braunisch , Shawna Liff , Brandon Rawlings , Veronica Strong , Johanna Swan
IPC: H01L23/538 , H01L23/00 , H01L23/498
Abstract: An electronic interposer may be formed using organic material layers, while allowing for the fabrication of high density interconnects within the electronic interposer without the use of embedded silicon bridges. This is achieved by forming the electronic interposer in three sections, i.e. an upper section, a lower section and a middle section. The middle section may be formed between the upper section and the lower section, wherein a thickness of each layer of the middle section is thinner than a thickness of any of the layers of the upper section and the lower section, and wherein conductive routes within the middle section have a higher density than conductive routes within the upper section and the lower section.
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公开(公告)号:US11133263B2
公开(公告)日:2021-09-28
申请号:US16573948
申请日:2019-09-17
Applicant: Intel Corporation
Inventor: Veronica Strong , Aleksandar Aleksov , Henning Braunisch , Brandon Rawlings , Johanna Swan , Shawna Liff
Abstract: An integrated circuit package may be formed including at least one die side integrated circuit device having an active surface electrically attached to an electronic interposer, wherein the at least one die side integrated circuit device is at least partially encased in a mold material layer and wherein a back surface of the at least one die side integrated circuit device is in substantially the same plane as an outer surface of the mold material layer. At least one stacked integrated circuit device may be electrically attached to the back surface of the at least one die side integrated circuit through an interconnection structure formed between the at least one die side integrated circuit device and the at least one stacked integrated circuit device.
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公开(公告)号:US20210082825A1
公开(公告)日:2021-03-18
申请号:US16573948
申请日:2019-09-17
Applicant: Intel Corporation
Inventor: Veronica Strong , Aleksandar Aleksov , Henning Braunisch , Brandon Rawlings , Johanna Swan , Shawna Liff
Abstract: An integrated circuit package may be formed including at least one die side integrated circuit device having an active surface electrically attached to an electronic interposer, wherein the at least one die side integrated circuit device is at least partially encased in a mold material layer and wherein a back surface of the at least one die side integrated circuit device is in substantially the same plane as an outer surface of the mold material layer. At least one stacked integrated circuit device may be electrically attached to the back surface of the at least one die side integrated circuit through an interconnection structure formed between the at least one die side integrated circuit device and the at least one stacked integrated circuit device.
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公开(公告)号:US20210080500A1
公开(公告)日:2021-03-18
申请号:US16573946
申请日:2019-09-17
Applicant: Intel Corporation
Inventor: Henning Braunisch , Aleksandar Aleksov , Veronica Strong , Brandon Rawlings , Johanna Swan , Shawna Liff
Abstract: An integrated circuit package having an electronic interposer comprising an upper section, a lower section and a middle section, a die side integrated circuit device electrically attached to the upper section of the electronic interposer, a die side heat dissipation device thermally contacting the die side integrated circuit device, a land side integrated circuit device electrically attached to the lower section of the electronic interposer, and a land side heat dissipation device thermally contacting the at least one die side integrated circuit device. The upper section and the lower section may each have between two and four layers and the middle section may be formed between the upper section and the lower section, and comprises up to eight layers, wherein a thickness of each layer of the middle section is thinner than a thickness of any of the layers of the upper section and the lower section.
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