公开(公告)号：US09099277B2

公开(公告)日：2015-08-04

申请号：US14334274

申请日：2014-07-17

Applicant: IMS Nanofabrication AG

Inventor： Elmar Platzgummer

IPC: H01J37/04 ,  H01J37/147 ,  H01J37/317

CPC classification number: H01J37/045 ,  H01J37/147 ,  H01J37/3177 ,  H01J2237/0435 ,  H01J2237/0437

Abstract: A pattern definition (PD) device for use in a charged-particle multi-beam processing or inspection apparatus includes at least two deflection array devices positioned in a stacked arrangement. A particle beam (Ib) traversing the PD device is formed into a plurality of beamlets, which can be deflected or blanked by the two deflection array devices. Each deflection array device comprises a plurality of blanking openings allowing passage of beamlets, and a plurality of deflecting devices, each deflecting device being associated with a respective blanking opening and comprising an electrostatic electrode. The deflecting devices are selectively activatable and configured to influence, when activated, the beamlets traversing said respective blanking openings so as to deflect said beamlets off their nominal paths. Each deflection array device is configured to act on only respective subsets of beamlets by selectively deflecting them, while allowing the other beamlets to traverse the respective deflection array device without deflection.

Abstract translation: 用于带电粒子多光束处理或检查装置的图案定义（PD）装置包括以堆叠布置定位的至少两个偏转阵列装置。 穿过PD器件的粒子束（Ib）形成为可被两个偏转阵列器件偏转或消隐的多个子束。 每个偏转阵列装置包括允许子束通过的多个消隐孔，以及多个偏转装置，每个偏转装置与相应的消隐开口相连并且包括静电电极。 偏转装置可选择性地激活并被配置成在被激活时影响横梁穿过所述各个消隐开口的子束，以便使所述子束偏离其标称路径。 每个偏转阵列装置被配置为仅通过选择性地偏转它们而仅对子束的相应子集起作用，同时允许其他子束无偏转地穿过相应的偏转阵列器件。

公开(公告)号：US20150021493A1

公开(公告)日：2015-01-22

申请号：US14334274

申请日：2014-07-17

Applicant: IMS Nanofabrication AG

Inventor： Elmar Platzgummer

IPC: H01J37/04 ,  H01J37/147

CPC classification number: H01J37/045 ,  H01J37/147 ,  H01J37/3177 ,  H01J2237/0435 ,  H01J2237/0437

Abstract: A pattern definition (PD) device for use in a charged-particle multi-beam processing or inspection apparatus includes at least two deflection array devices positioned in a stacked arrangement. A particle beam (Ib) traversing the PD device is formed into a plurality of beamlets, which can be deflected or blanked by the two deflection array devices. Each deflection array device comprises a plurality of blanking openings allowing passage of beamlets, and a plurality of deflecting devices, each deflecting device being associated with a respective blanking opening and comprising an electrostatic electrode. The deflecting devices are selectively activatable and configured to influence, when activated, the beamlets traversing said respective blanking openings so as to deflect said beamlets off their nominal paths. Each deflection array device is configured to act on only respective subsets of beamlets by selectively deflecting them, while allowing the other beamlets to traverse the respective deflection array device without deflection.

Abstract translation: 用于带电粒子多光束处理或检查装置的图案定义（PD）装置包括以堆叠布置定位的至少两个偏转阵列装置。 穿过PD器件的粒子束（Ib）形成为可被两个偏转阵列器件偏转或消隐的多个子束。 每个偏转阵列装置包括允许子束通过的多个消隐孔，以及多个偏转装置，每个偏转装置与相应的消隐开口相连并且包括静电电极。 偏转装置可选择性地激活并被配置成在被激活时影响横梁穿过所述各个消隐开口的子束，以便使所述子束偏离其标称路径。 每个偏转阵列装置被配置为仅通过选择性地偏转它们而仅对子束的相应子集起作用，同时允许其他子束无偏转地穿过相应的偏转阵列器件。

公开(公告)号：US20170357153A1

公开(公告)日：2017-12-14

申请号：US15620599

申请日：2017-06-12

Applicant: IMS Nanofabrication AG

Inventor： Elmar Platzgummer

IPC: G03F1/36 ,  G06F17/50

CPC classification number: H01J37/3177 ,  G03F1/78

Abstract: A method for compensating pattern placement errors during writing a pattern on a target in a charged-particle multi-beam exposure apparatus including a layout generated by exposing a plurality of beam field frames using a beam of electrically charged particles, wherein each beam field frame has a respective local pattern density, corresponding to exposure doses imparted to the target when exposing the respective beam field frames. During writing the beam field frames, the positions deviate from respective nominal positions because of build-up effects within said exposure apparatus, depending on the local pattern density evolution during writing the beam field frames. To compensate, a displacement behavior model is employed to predict displacements; a local pattern density evolution is determined, displacements of the beam field frames are predicted based on the local pattern density evolution and the displacement behavior model, and the beam field frames are repositioned accordingly based on the predicted values.

公开(公告)号：US09495499B2

公开(公告)日：2016-11-15

申请号：US14726243

申请日：2015-05-29

Applicant: IMS Nanofabrication AG

Inventor： Elmar Platzgummer ,  Rafael Reiter

IPC: G06F17/50 ,  H01J37/304 ,  H01J37/317

CPC classification number: G06F17/5072 ,  G06F17/5081 ,  H01J37/304 ,  H01J37/3177 ,  H01J2237/24535 ,  H01J2237/31761

Abstract: An exposure pattern is computed which is used for exposing a desired pattern on a target by means of a particle beam and a blanking aperture array in a particle-optical lithography apparatus, taking into account a non-uniform current dose distribution as generated by the beam over the positions of the apertures of the blanking aperture array: From the desired pattern a nominal exposure pattern is calculated as a raster graphics comprising nominal dose values for the pixels of the raster graphics; based on a map of the current dose distribution, which correlates each aperture with a current factor describing the current dose of the beam at the location of the aperture, a compensated dose value is calculated for each pixel; and for each pixel, a discrete value is determined by selecting a value from a discrete gray scale so as to approximate the compensated dose value.

Abstract translation: 计算曝光图案，其用于通过粒子光学光刻设备中的粒子束和消隐孔阵列在目标上曝光期望的图案，考虑到由光束产生的不均匀的电流剂量分布 在消隐孔径阵列的孔的位置上：从期望的图案中，将标称曝光图案计算为包括光栅图形的像素的标称剂量值的光栅图形; 基于当前剂量分布的图，其将每个孔径与描述在孔的位置处的束的当前剂量的当前因子相关联，为每个像素计算补偿剂量值; 并且对于每个像素，通过从离散灰度级中选择一个值来确定离散值，以便近似补偿的剂量值。

公开(公告)号：US20160071684A1

公开(公告)日：2016-03-10

申请号：US14845197

申请日：2015-09-03

Applicant: IMS Nanofabrication AG

Inventor： Elmar Platzgummer ,  Christoph Spengler ,  Markus Wagner ,  Samuel Kvasnica

IPC: H01J37/153 ,  G05B19/402 ,  H01J37/317

CPC classification number: G05B19/402 ,  H01J37/3045 ,  H01J37/3177 ,  H01J2237/31764

Abstract: Method for computing an exposure pattern for exposing a desired pattern on a target in a charged-particle lithography apparatus, in which a particle beam is directed to and illuminates a pattern definition device comprising an aperture array composed of a plurality of blanking apertures through which said particle beam penetrates for writing said desired pattern by exposing a multitude of pixels within an exposure area on the target, said method taking into account a spatially dependent distortion of the target within the exposure area, with respect to dislocations transversal to the direction of the particle beam.

Abstract translation: 一种用于计算曝光图案的方法，用于在带电粒子光刻设备中的目标上曝光所需图案，其中，粒子束被引导并照射包括由多个消隐孔组成的孔径阵列的图案定义装置， 通过在目标的曝光区域内暴露许多像素，粒子束穿透以写入所需的图案，所述方法考虑到在曝光区域内的目标的空间依赖的变形，相对于沿粒子方向横向的位错 光束。

公开(公告)号：US20160013019A1

公开(公告)日：2016-01-14

申请号：US14795535

申请日：2015-07-09

Applicant: IMS Nanofabrication AG

Inventor： Elmar Platzgummer

IPC: H01J37/317 ,  H01J37/04

CPC classification number: H01J37/3177 ,  G06F17/5072 ,  G06F17/5081 ,  H01J37/045 ,  H01J37/09 ,  H01J37/3026 ,  H01J37/3175 ,  H01J2237/043 ,  H01J2237/3175 ,  H01J2237/31764

Abstract: An exposure pattern is computed for exposing a desired pattern on a target in a charged-particle multi-beam processing apparatus to match a reference writing tool, and/or for compensating a deviation of the imaging from a pattern definition device onto the target from a desired value of critical dimension along at least one direction in the image area on the target: The desired pattern is provided as a graphical representation suitable for the reference tool, on the image area on the target. A convolution kernel is used which describes a mapping from an element of the graphical representation to a group of pixels which is centered around a nominal position of said element. A nominal exposure pattern is calculated by convolution of the graphical representation with the convolution kernel, said nominal exposure pattern being suitable to create a nominal dose distribution on the target when exposed with the processing apparatus.

Abstract translation: 计算曝光图案以在带电粒子多光束处理装置中的目标上曝光期望图案以匹配参考写入工具，和/或用于从图案定义装置将图像偏离从图案定义装置补偿到目标上 在目标图像区域中至少沿一个方向的临界尺寸的期望值：所需图案作为适合参考工具的图形表示，在目标上的图像区域上提供。 使用卷积核，其描述从图形表示的元素到以所述元素的标称位置为中心的一组像素的映射。 通过图形表示与卷积核的卷积来计算标称曝光图案，所述标称曝光图案适于在用处理装置曝光时在目标上产生标称剂量分布。

公开(公告)号：US20150311031A1

公开(公告)日：2015-10-29

申请号：US14694975

申请日：2015-04-23

Applicant: IMS Nanofabrication AG

Inventor： Elmar Platzgummer ,  Hans Löschner

IPC: H01J37/147 ,  H01J37/317 ,  H01J37/31

CPC classification number: H01J37/147 ,  H01J37/3007 ,  H01J37/31 ,  H01J37/3177 ,  H01J2237/0435 ,  H01J2237/0437

Abstract: In a charged-particle multi-beam processing apparatus for exposure of a target with a plurality of parallel particle-optical columns the beam shaping device of each column includes an aperture array device provided with at least one array of apertures. Each array of apertures comprises a multitude of apertures for defining the shape of a respective sub-beam which is then imaged onto the target. The apertures form the sub-beam into an oblong shape as seen along the direction of the beam, said oblong shape having a short and a long side, with the long side being at least the double of the short side. The oblong shape thus defined by the apertures is oriented traversing a line grid direction of a line pattern of the target. The apertures of different aperture arrays may have different shapes and/or different orientations.

Abstract translation: 在用于用多个平行粒子光学柱曝光靶的带电粒子多光束处理装置中，每列的光束整形装置包括具有至少一个孔阵列的孔径阵列装置。 每个孔阵列包括多个孔，用于限定相应子光束的形状，然后将其成像到靶上。 所述小孔形成为沿着所述梁的方向观察的长圆形形状，所述长方形具有短且长边，长边至少为短边的两倍。 由孔限定的长方形被定向为穿过靶的线条图案的线网格方向。 不同孔径阵列的孔径可以具有不同的形状和/或不同的取向。

公开(公告)号：US09053906B2

公开(公告)日：2015-06-09

申请号：US14341381

申请日：2014-07-25

Applicant: IMS Nanofabrication AG

Inventor： Elmar Platzgummer

IPC: H01J37/302 ,  H01J37/317

CPC classification number: H01J37/3026 ,  H01J37/3175 ,  H01J37/3177 ,  H01J2237/31754 ,  H01J2237/31764 ,  H01J2237/31766 ,  H01J2237/31774

Abstract: To irradiate a target with a beam of energetic radiation formed by electrically charged particles, the beam is formed and imaged onto a target, where it generates a pattern image composed of pixels. The pattern image is moved along a path on the target over a region to be exposed, and this movement defines a number of stripes covering said region in sequential exposures and having respective widths. The number of stripes is written in at least two subsequent passes such that for each pass, the widths of the stripes of one pass combine into a cover of the total width of the region to be exposed; and each pass is associated with one of a number of partial grids of pattern pixels which are exposable during the respective pass. The mutually different partial grids combine to the complete plurality of pattern pixels which compose the region to be exposed.

Abstract translation: 为了用由带电粒子形成的能量辐射束照射目标，该束被形成并成像到目标上，在该目标上产生由像素组成的图案图像。 图案图像沿着待曝光的区域上的目标上的路径移动，并且该移动在顺序曝光中限定覆盖所述区域并具有相应宽度的多个条纹。 条纹的数量写在至少两个随后的通过中，使得对于每次通过，一次通过的条纹的宽度组合成待暴露区域的总宽度的盖子; 并且每个通过与在相应通过期间可曝光的多个图案像素的局部网格中的一个相关联。 相互不同的部分网格组合到构成要暴露的区域的完整的多个图案像素。

公开(公告)号：US20150028230A1

公开(公告)日：2015-01-29

申请号：US14341381

申请日：2014-07-25

Applicant: IMS Nanofabrication AG

Inventor： Elmar Platzgummer

IPC: H01J37/302 ,  H01J37/317

CPC classification number: H01J37/3026 ,  H01J37/3175 ,  H01J37/3177 ,  H01J2237/31754 ,  H01J2237/31764 ,  H01J2237/31766 ,  H01J2237/31774

Abstract: To irradiate a target with a beam of energetic radiation formed by electrically charged particles, the beam is formed and imaged onto a target, where it generates a pattern image composed of pixels. The pattern image is moved along a path on the target over a region to be exposed, and this movement defines a number of stripes covering said region in sequential exposures and having respective widths. The number of stripes is written in at least two subsequent passes such that for each pass, the widths of the stripes of one pass combine into a cover of the total width of the region to be exposed; and each pass is associated with one of a number of partial grids of pattern pixels which are exposable during the respective pass. The mutually different partial grids combine to the complete plurality of pattern pixels which compose the region to be exposed.

Abstract translation: 为了用由带电粒子形成的能量辐射束照射目标，该束被形成并成像到目标上，在该目标上产生由像素组成的图案图像。 图案图像沿着待曝光的区域上的目标上的路径移动，并且该移动在顺序曝光中限定覆盖所述区域并具有相应宽度的多个条纹。 条纹的数量写在至少两个随后的通过中，使得对于每次通过，一次通过的条纹的宽度组合成待暴露区域的总宽度的盖子; 并且每个通过与在相应通过期间可曝光的多个图案像素的局部网格中的一个相关联。 相互不同的部分网格组合到构成要暴露的区域的完整的多个图案像素。

公开(公告)号：US20140197327A1

公开(公告)日：2014-07-17

申请号：US14155771

申请日：2014-01-15

Applicant: IMS NANOFABRICATION AG

Inventor： Elmar Platzgummer ,  Andreas Chylik ,  Gerald Kratzert ,  Roman Oberleitner

IPC: H01B17/14 ,  H01J37/147

CPC classification number: H01B17/14 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/023 ,  H01J37/04 ,  H01J37/147 ,  H01J37/15 ,  H01J37/3177 ,  H01J2237/036 ,  H01J2237/038 ,  H01J2237/1502

Abstract: A high-voltage insulation device (300) for use in a charged-particle optical apparatus comprises a plurality of rigid pillars (320) made of electrically insulating material. These pillars (320) are arranged around a central passage (310) which traverses the insulating device along its longitudinal axis (L), and the two ends of each pillar are configured to be respectively fixed to two separate electrostatic housings (221, 231) of the charged-particle optical apparatus by means of two respective end plates (311, 312), with the pillars (320) being oriented at an angle so as to be inclined with regard to said longitudinal axis (L). Advantageously, the pillars are mechanically adjustable with regard to their effective length, and each pillar (320) is arranged outside the central passage with its two ends at either of the first and second end plates (311,312), preferably in a zig-zag arrangement.

Abstract translation: 用于带电粒子光学装置的高压绝缘装置（300）包括由电绝缘材料制成的多个刚性支柱（320）。 这些支柱（320）围绕其纵向轴线（L）穿过绝缘装置的中心通道（310）布置，并且每个支柱的两端被分别固定在两个独立的静电外壳（221,231）上， 通过两个相应的端板（311,312）连接带电粒子光学装置，柱子（320）以相对于所述纵向轴线（L）倾斜的角度定向。 有利地，支柱可相对于它们的有效长度机械地调节，并且每个支柱（320）布置在中心通道的外侧，其两端位于第一和第二端板（311,312）中的任一个处，优选地以Z字形布置 。