DEVICES WITH FIELD EFFECT TRANSISTORS
    13.
    发明公开

    公开(公告)号:US20230184711A1

    公开(公告)日:2023-06-15

    申请号:US18003493

    申请日:2021-06-18

    Applicant: Illumina, Inc.

    CPC classification number: G01N27/4146

    Abstract: Devices and methods of using the devices are disclosed which can provide scalability, improved sensitivity and reduced noise for sequencing polynucleotide. Examples of the devices include a biological or solid-state nanopore, a field effect transistor (FET) sensor with improved gate controllability over the channel, and a porous structure.

    Field effect sensors
    20.
    发明授权

    公开(公告)号:US10551342B2

    公开(公告)日:2020-02-04

    申请号:US16024299

    申请日:2018-06-29

    Applicant: ILLUMINA, INC.

    Inventor: Boyan Boyanov

    Abstract: Apparatus and methods are disclosed for single molecule field effect sensors having conductive channels functionalized with a single active moiety. A region of a nanostructure (e.g., such as a silicon nanowire or a carbon nanotube) provide the conductive channel. Trapped state density of the nanostructure is modified for a portion of the nanostructure in proximity with a location where the active moiety is linked to the nanostructure. In one example, the semiconductor device includes a source, a drain, a channel including a nanostructure having a modified portion with an increased trap state density, the modified portion being further functionalized with an active moiety. A gate terminal is in electrical communication with the nanostructure. As a varying electrical signal is applied to an ionic solution in contact with the nanostructure channel, changes in current observed from the semiconductor device can be used to identify composition of the analyte.

Patent Agency Ranking