公开(公告)号：US20200294764A1

公开(公告)日：2020-09-17

申请号：US16765737

申请日：2017-11-27

Applicant: Hitachi High-Tech Corporation

Inventor： Katsura Takaguchi ,  Natsuki Tsuno ,  Masahiro Sasajima ,  Toshihide Agemura

IPC: H01J37/28 ,  H01J37/22 ,  H01J37/285

Abstract: A charged particle beam apparatus includes: an electromagnetic wave generation source 16 that generates an electromagnetic wave with which a sample is irradiated; a charged particle optical system that includes a pulsing mechanism 3 and irradiates the sample with a focused charged particle beam; a detector 10 that detects an emitted electron emitted by an interaction between the charged particle beam and the sample; a first irradiation control unit 15 that controls the electromagnetic wave generation source and irradiates the sample with a pulsed electromagnetic wave to generate an excited carrier; a second irradiation control unit 14 that controls the pulsing mechanism and irradiates an electromagnetic wave irradiation region of the sample with a pulsed charged particle beam; and a timing control unit 13. While the emitted electrons are detected by the detector in synchronization with irradiation of the pulsed charged particle beam, the timing control unit controls the first irradiation control unit and the second irradiation control unit, and controls an interval time between the pulsed electromagnetic wave and the pulsed charged particle beam to the electromagnetic wave irradiation region. As a result, based on a transient change in an electron emission amount, it is possible to detect sample information with nano spatial resolution.

公开(公告)号：US11335535B2

公开(公告)日：2022-05-17

申请号：US16920898

申请日：2020-07-06

Applicant: Hitachi High-Tech Corporation

Inventor： Yohei Nakamura ,  Takafumi Miwa ,  Heita Kimizuka ,  Natsuki Tsuno ,  Muneyuki Fukuda

IPC: H01J37/244 ,  H01J37/28 ,  G01N23/2251

Abstract: Provided is a charged particle beam apparatus capable of estimating an internal device structure of a sample. The charged particle beam apparatus includes an electron beam optical system, a detector, and a calculator. The electron beam optical system irradiates a plurality of irradiation points on a sample, which are different in position or time, with an electron beam. The detector detects electrons emitted from the sample in response to irradiation of the electron beam by the electron beam optical system. The calculator calculates a dependence relationship between the irradiation points based on the electrons detected by the detector at the plurality of irradiation points.

公开(公告)号：US20220102108A1

公开(公告)日：2022-03-31

申请号：US17545936

申请日：2021-12-08

Applicant: Hitachi High-Tech Corporation

Inventor： Takafumi Miwa ,  Yohei Nakamura ,  Natsuki Tsuno ,  Heita Kimizuka ,  Muneyuki Fukuda

IPC: H01J37/22 ,  H01J37/244 ,  G01N23/2251

Abstract: A computing unit generates a to-be-used-in-computation netlist on the basis of a to-be-used-in-calculation device model corresponding to a correction sample, estimates a first application result, on the basis of the to-be-used-in-computation netlist and an optical condition, when a charged particle beam is applied to the correction sample under the optical condition, compares the first application result and a second application result based on a detection signal when the charged particle beam is applied to the correction sample under the optical condition, and corrects the optical condition when the first application result and the second application result differ from each other.

公开(公告)号：US11043359B2

公开(公告)日：2021-06-22

申请号：US16920927

申请日：2020-07-06

Applicant: Hitachi High-Tech Corporation

Inventor： Yohei Nakamura ,  Natsuki Tsuno ,  Heita Kimizuka ,  Takafumi Miwa ,  Muneyuki Fukuda ,  Junichi Tanaka

IPC: H01J37/244 ,  H01J37/28 ,  H01J37/26

Abstract: Provided are a charged particle beam apparatus and a charged particle beam inspection system capable of estimating electrical characteristics of a sample including capacitance characteristics. The charged particle beam apparatus estimates electrical characteristics of the sample using the correspondence data representing the correspondence between the node of the netlist and the coordinate on the sample and the pulsing condition when the sample is irradiated with the charged particle beam in a pulsed manner. The charged particle beam optical system irradiates a predetermined coordinate on the sample with a charged particle beam based on a pulsing condition, and the detector actually measures an emission amount of electrons. The emission amount calculation unit calculates, for the node on the netlist corresponding to a predetermined coordinate, an emission amount of electrons according to a temporal change in a charged state accompanying the irradiation of the charged particle beam based on the pulsing condition. The comparator compares a measurement result by the detector with a calculation result by the emission amount calculation unit.

公开(公告)号：US11011348B2

公开(公告)日：2021-05-18

申请号：US16474499

申请日：2017-01-17

Applicant: HITACHI HIGH-TECH CORPORATION

Inventor： Daisuke Bizen ,  Natsuki Tsuno ,  Takafumi Miwa ,  Makoto Sakakibara ,  Toshiyuki Yokosuka ,  Hideyuki Kazumi

IPC: H01J37/244 ,  H01J37/04 ,  H01J37/05 ,  H01J37/09 ,  H01J37/10 ,  H01J37/20 ,  H01J37/28

Abstract: Provided is a scanning electron microscope. The scanning electron microscope is capable of removing a charge generated on a side wall of a deep hole or groove, and inspects and measures a bottom portion of the deep hole or groove with high accuracy. Therefore, in the scanning electron microscope that includes an electron source 201 that emits a primary electron, a sample stage 213 on which a sample is placed, a deflector 207 that causes the sample to be scanned with the primary electron, an objective lens 203 that focuses the primary electron on the sample, and a detector 206 that detects a secondary electron generated by irradiating the sample with the primary electron, a potential applied to the sample stage is controlled to have a negative polarity with respect to a potential applied to the objective lens during a first period in which the sample is irradiated with the primary electron, and the potential applied to the sample stage is controlled to have a positive polarity with respect to the potential applied to the objective lens during a second period in which the sample is not irradiated with the primary electron.

公开(公告)号：US20210043419A1

公开(公告)日：2021-02-11

申请号：US16920927

申请日：2020-07-06

Applicant: Hitachi High-Tech Corporation

Inventor： Yohei Nakamura ,  Natsuki Tsuno ,  Heita Kimizuka ,  Takafumi Miwa ,  Muneyuki Fukuda ,  Junichi Tanaka

IPC: H01J37/28 ,  H01J37/244 ,  H01J37/26

Abstract: Provided are a charged particle beam apparatus and a charged particle beam inspection system capable of estimating electrical characteristics of a sample including capacitance characteristics. The charged particle beam apparatus estimates electrical characteristics of the sample using the correspondence data representing the correspondence between the node of the netlist and the coordinate on the sample and the pulsing condition when the sample is irradiated with the charged particle beam in a pulsed manner. The charged particle beam optical system irradiates a predetermined coordinate on the sample with a charged particle beam based on a pulsing condition, and the detector actually measures an emission amount of electrons. The emission amount calculation unit calculates, for the node on the netlist corresponding to a predetermined coordinate, an emission amount of electrons according to a temporal change in a charged state accompanying the irradiation of the charged particle beam based on the pulsing condition. The comparator compares a measurement result by the detector with a calculation result by the emission amount calculation unit.

公开(公告)号：US12181513B2

公开(公告)日：2024-12-31

申请号：US18026718

申请日：2020-09-30

Applicant: Hitachi High-Tech Corporation

Inventor： Shota Mitsugi ,  Yohei Nakamura ,  Daisuke Bizen ,  Junichi Fuse ,  Satoshi Takada ,  Natsuki Tsuno

IPC: G01R31/26 ,  G01R31/265

Abstract: A control device controls a contact probe in synchronization with a pulse-controlled light having a predetermined wavelength, a measurement instrument measures a characteristic of a sample to be inspected or an analysis sample, and a circuit constant or a defect structure of the sample to be inspected is estimated based on a circuit model created by an electric characteristic analysis device configured to generate the circuit model based on a value measured by the measurement instrument and a detection signal of secondary electrons detected by the charged particle beam device.

公开(公告)号：US11694325B2

公开(公告)日：2023-07-04

申请号：US16904309

申请日：2020-06-17

Applicant: Hitachi High-Tech Corporation

Inventor： Heita Kimizuka ,  Yohei Nakamura ,  Natsuki Tsuno ,  Muneyuki Fukuda

IPC: G06T7/00

CPC classification number: G06T7/001 ,  G06T2207/10152 ,  G06T2207/30148

Abstract: An object of the present disclosure is to provide a system for deriving a type of a defect of a semiconductor element and a non-transitory computer-readable medium. The system receives, from the image acquisition tool, image data obtained by sequentially irradiating a plurality of patterns provided on the semiconductor wafer with a beam and extracts characteristics of the plurality of patterns sequentially irradiated with a beam from the received image data, the characteristics being included in the image data, or receives characteristics of the plurality of patterns sequentially irradiated with a beam from the image acquisition tool, the characteristics being extracted from the image data (Step 603), and derives (Step 605) a type of a defect by referring to (Step 604) related information for the characteristics of the plurality of patterns, the related information storing the characteristics of the plurality of patterns and types of defects in association with each other.

公开(公告)号：US20220102109A1

公开(公告)日：2022-03-31

申请号：US17545944

申请日：2021-12-08

Applicant: Hitachi High-Tech Corporation

Inventor： Takafumi Miwa ,  Yohei Nakamura ,  Natsuki Tsuno ,  Heita Kimizuka ,  Muneyuki Fukuda

IPC: H01J37/24 ,  H01J37/244

Abstract: A charged particle beam apparatus includes a database that stores a to-be-used-in-calculation device model for use in estimation of a circuit of a sample and an optical condition under which a charged particle beam is applied to the sample, a charged particle beam optical system that controls the beam applied to the sample under the optical condition, a detector that detects secondary electrons emitted from the sample excited by the application of the beam and outputs a detection signal based on the secondary electrons, and a computing unit that generates a to-be-used-in-computation netlist based on the to-be-used-in-calculation device model, estimates a first application result when the beam is applied to the sample based on the to-be-used-in-computation netlist and the optical condition, and compares the first application result with a second application result when the beam is applied to the sample based on the optical condition.

公开(公告)号：US11043358B2

公开(公告)日：2021-06-22

申请号：US16486422

申请日：2017-05-12

Applicant: HITACHI HIGH-TECH CORPORATION

Inventor： Ryoko Araki ,  Natsuki Tsuno ,  Yohei Nakamura ,  Masahiro Sasajima ,  Mitsuhiro Nakamura ,  Toshihide Agemura

IPC: H01J37/00 ,  H01J37/24 ,  H01J37/10 ,  H01J37/244 ,  H01J37/28

Abstract: A measuring apparatus that irradiates a sample with a charged particle beam to observe the sample includes a particle source that outputs the charged particle beam, a lens that collects the charged particle beam, a detector that detects a signal of emitted electrons emitted from the sample which is irradiated with the charged particle beam, and a control device that controls the output of the charged particle beam and the detection of the signal of the emitted electrons in accordance with an observation condition, in which the control device sets, as the observation condition, a first parameter for controlling an irradiation cycle of the charged particle beam, a second parameter for controlling a pulse width of the pulsed charged particle beam, and a third parameter for controlling detection timing of the signal of the emitted electron within the irradiation time of the pulsed charged particle beam, and the third parameter is determined in accordance with a difference in intensity of signals of the plurality of the emitted electrons emitted from the irradiation position of the charged particle beam.