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11.发明申请MASK BLANK SUBSTRATE, SUBSTRATE WITH MULTILAYER REFLECTION FILM, TRANSMISSIVE MASK BLANK, REFLECTIVE MASK, AND SEMICONDUCTOR DEVICE FABRICATION METHOD 有权掩模基板，具有多层反射膜的基板，透射掩模层，反射掩模和半导体器件制造方法公开(公告)号：US20150017574A1
公开(公告)日：2015-01-15
申请号：US14348413
申请日：2013-03-28
Applicant: HOYA CORPORATION
Inventor： Toshihiko Orihara , Kazuhiro Hamamoto , Hirofumi Kozakai , Youichi Usui , Tsutomu Shoki , Junichi Horikawa
CPC classification number: G03F1/48 , B82Y10/00 , B82Y40/00 , C03C3/06 , C03C17/3435 , C03C17/3626 , C03C17/3636 , C03C17/3639 , C03C17/3649 , C03C17/3665 , C03C23/0075 , C03C2201/42 , C03C2218/33 , G02B5/08 , G02B5/0816 , G02B5/0891 , G03F1/22 , G03F7/16 , G03F7/2002 , G03F7/2004 , G03F7/70733 , H01L21/3081 , H01L21/3085
Abstract: Disclosed is a mask blank substrate for use in lithography, wherein the main surface on which the transfer pattern of the substrate is formed has a root mean square roughness (Rms) of not more than 0.15 nm obtained by measuring an area of 1 μm×1 μm with an atomic force microscope, and has a power spectrum density of not more than 10 nm4 at a spatial frequency of not less than 1 μm−1.
Abstract translation: 公开了一种用于光刻的掩模空白基板，其中形成基板的转印图案的主表面具有通过测量1μm×1的面积获得的不大于0.15nm的均方根粗糙度（Rms） 具有原子力显微镜，并且在不小于1μm-1的空间频率下具有不大于10nm 4的功率谱密度。
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公开(公告)号：US12025911B2
公开(公告)日：2024-07-02
申请号：US18142223
申请日：2023-05-02
Applicant: HOYA CORPORATION
Inventor： Kazuhiro Hamamoto , Tsutomu Shoki
CPC classification number: G03F1/24 , G03F1/42 , G03F7/2004
Abstract: A substrate with a multilayer reflective film, a reflective mask blank, a reflective mask and a method of manufacturing a semiconductor device that can prevent contamination of the surface of the multilayer reflective film even in the case of having formed reference marks on the multilayer reflective film. A substrate with a multilayer reflective film contains a substrate and a multilayer reflective film that reflects EUV light formed on the substrate. Reference marks are formed to a concave shape on the surface of the substrate with the multilayer reflective film. The reference marks have grooves or protrusions roughly in the center. The shape of the grooves or protrusions when viewed from overhead is similar or roughly similar to the shape of the reference marks.
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公开(公告)号：US11852964B2
公开(公告)日：2023-12-26
申请号：US17325627
申请日：2021-05-20
Applicant: HOYA CORPORATION
Inventor： Tsutomu Shoki , Takahiro Onoue
Abstract: A method of manufacturing a reflective mask blank includes: forming a multilayer reflective film, which is configured to reflect EUV light, on a substrate to form a substrate with a multilayer reflective film; subjecting the substrate with a multilayer reflective film to defect inspection; forming an absorber film, which is configured to absorb the EUV light, on the multilayer reflective film of the substrate with a multilayer reflective film; forming a reflective mask blank, in which an alignment region is formed in an outer peripheral edge region of a pattern formation region by removing the absorber film so that the multilayer reflective film of an area including an element serving as a reference of defect information on the multilayer reflective film is exposed in the alignment region; and performing defect management of the reflective mask blank through use of the alignment region.
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公开(公告)号：US10921705B2
公开(公告)日：2021-02-16
申请号：US15778363
申请日：2016-11-15
Applicant: HOYA CORPORATION
Inventor： Yohei Ikebe , Tsutomu Shoki
Abstract: Provided is a reflective mask capable of reducing out-of-band light when transferring a prescribed pattern onto a wafer by exposure using EUV light in a process of manufacturing a semiconductor device. The mask blank substrate is provided with a base film on a substrate, the base film is formed with a material having a refractive index smaller than the substrate over a wavelength range of not less than 190 nm and not more than 280 nm, and reflectance of the base film arranged on the surface of the substrate is smaller than the reflectance of the substrate over a wavelength range of not less than 190 nm to not more than 280 nm.
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公开(公告)号：US10191365B2
公开(公告)日：2019-01-29
申请号：US15634247
申请日：2017-06-27
Applicant: HOYA CORPORATION
Inventor： Kazuhiro Hamamoto , Tatsuo Asakawa , Tsutomu Shoki
Abstract: A reflective mask blank capable of facilitating the discovery of contaminants, scratches and other critical defects by inhibiting the detection of pseudo defects attributable to surface roughness of a substrate or film in a defect inspection using a highly sensitive defect inspection apparatus. The reflective mask blank has a mask blank multilayer film comprising a multilayer reflective film, obtained by alternately laminating a high refractive index layer and a low refractive index layer, and an absorber film on a main surface of a mask blank substrate, wherein the root mean square roughness (Rms), obtained by measuring a 3 μm×3 μm region on the surface of the reflective mask blank on which the mask blank multilayer film is formed with an atomic force microscope, is not more than 0.5 nm and the power spectrum density at a spatial frequency of 1 μm−1 to 10 μm−1 is not more than 50 nm4.
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Patent Agency Ranking
公开(公告)号：US10126641B2
公开(公告)日：2018-11-13
申请号：US15216072
申请日：2016-07-21
Applicant: HOYA CORPORATION
Inventor： Tsutomu Shoki , Kazuhiro Hamamoto
Abstract: Provided is a multilayer reflective film formed substrate formed with a fiducial mark for accurately managing coordinates of defects. A multilayer reflective film formed substrate is formed with a multilayer reflective film, which is adapted to reflect EUV light, on a substrate and a fiducial mark which serves as a reference for a defect position in defect information is formed on the multilayer reflective film. The fiducial mark includes a main mark for determining a reference point for the defect position and auxiliary marks arranged around the main mark. The main mark has a point-symmetrical shape and has a portion with a width of 200 nm or more and 10 μm or less with respect to a scanning direction of an electron beam writing apparatus or defect inspection light.
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17.发明授权公开(公告)号：US10067419B2
公开(公告)日：2018-09-04
申请号：US14768787
申请日：2014-02-20
Applicant: HOYA CORPORATION
Inventor： Tsutomu Shoki , Kazuhiro Hamamoto , Yohei Ikebe
CPC classification number: G03F1/84 , C23C14/35 , C23C14/46 , G03F1/24 , G03F1/38 , G06T7/0004 , G06T2207/30148 , G06T2207/30204
Abstract: A method of manufacturing a reflective mask blank comprising a multilayer reflective film formed on a substrate so as to reflect EUV light; and a laminated film formed on the multilayer reflective film. The method includes the steps of depositing the multilayer reflective film on the substrate to form a multilayer reflective film formed substrate; carrying out defect inspection for the multilayer reflective film formed substrate; depositing the laminated film on the multilayer reflective film of the multilayer reflective film formed substrate; forming a fiducial mark for an upper portion of the laminated film to thereby form a reflective mask blank comprising the fiducial mark, the fiducial mark serving as a reference for a defect position in defect information; and carrying out defect inspection of the reflective mask blank by using the fiducial mark as a reference.
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18.发明授权Method of manufacturing substrate with a multilayer reflective film, method of manufacturing a reflective mask blank, substrate with a multilayer reflective film, reflective mask blank, reflective mask and method of manufacturing a semiconductor device 有权利用多层反射膜制造衬底的方法，制造反射掩模板的方法，具有多层反射膜的衬底，反射掩模板，反射掩模和制造半导体器件的方法公开(公告)号：US09507254B2
公开(公告)日：2016-11-29
申请号：US14423494
申请日：2013-09-24
Applicant: HOYA CORPORATION
Inventor： Toshihiko Orihara , Kazuhiro Hamamoto , Hirofumi Kozakai , Tsutomu Shoki , Junichi Horikawa
Abstract: An object of the present invention is to provide a substrate with a multilayer reflective film that enables the number of detected pseudo defects, to be reduced even when using highly sensitive defect inspection apparatuses using light of various wavelengths, and in particular, is capable of achieving a level of smoothness required of substrates with a multilayer reflective film while reliably detecting critical defects as a result of reducing the number of detected pseudo defects, as well as a method of manufacturing the same.The present invention relates to a method of manufacturing a substrate with a multilayer reflective film having a multilayer reflective film, obtained by alternately laminating a high refractive index layer and a low refractive index layer, on the main surface of a mask blank substrate on the side of which a transfer pattern is formed, comprising a step of: depositing the multilayer reflective film on the main surface by ion beam sputtering using targets composed of a high refractive index material and a low refractive index material; wherein, during the ion beam sputtering, sputtered particles of the high refractive index material and the low refractive index material are made to enter at prescribed incident angle relative to the normal of the main surface so that the power spectral density in a prescribed spatial frequency region is a prescribed value.
Abstract translation: 本发明涉及一种具有多层反射膜的基板的制造方法，所述多层反射膜具有通过交替层叠高折射率层和低折射率层而获得的多层反射膜，所述多层反射膜在所述侧面上的掩模基板的主表面上 其中形成转印图案的步骤包括以下步骤：通过使用由高折射率材料和低折射率材料构成的靶使用离子束溅射将多层反射膜沉积在主表面上; 其中，在离子束溅射期间，使高折射率材料和低折射率材料的溅射颗粒相对于主表面的法线以规定的入射角进入，使得在规定的空间频率区域中的功率谱密度 是规定值。
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19.发明授权Mask blank substrate, substrate with multilayer reflection film, transmissive mask blank, reflective mask, and semiconductor device fabrication method 有权掩模空白基板，具有多层反射膜的基板，透射掩模板，反射掩模和半导体器件制造方法公开(公告)号：US09494851B2
公开(公告)日：2016-11-15
申请号：US14348413
申请日：2013-03-28
Applicant: HOYA CORPORATION
Inventor： Toshihiko Orihara , Kazuhiro Hamamoto , Hirofumi Kozakai , Youichi Usui , Tsutomu Shoki , Junichi Horikawa
IPC: G03F1/50 , G03F1/22 , G02B5/08 , G03F1/48 , B82Y10/00 , B82Y40/00 , G03F7/20 , C03C3/06 , C03C17/34 , C03C17/36 , C03C23/00
CPC classification number: G03F1/48 , B82Y10/00 , B82Y40/00 , C03C3/06 , C03C17/3435 , C03C17/3626 , C03C17/3636 , C03C17/3639 , C03C17/3649 , C03C17/3665 , C03C23/0075 , C03C2201/42 , C03C2218/33 , G02B5/08 , G02B5/0816 , G02B5/0891 , G03F1/22 , G03F7/16 , G03F7/2002 , G03F7/2004 , G03F7/70733 , H01L21/3081 , H01L21/3085
Abstract: Disclosed is a mask blank substrate for use in lithography, wherein the main surface on which the transfer pattern of the substrate is formed has a root mean square roughness (Rms) of not more than 0.15 nm obtained by measuring an area of 1 μm×1 μm with an atomic force microscope, and has a power spectrum density of not more than 10 nm4 at a spatial frequency of not less than 1 μm−1.
Abstract translation: 公开了一种用于光刻的掩模空白基板，其中形成基板的转印图案的主表面具有通过测量1μm×1的面积获得的不大于0.15nm的均方根粗糙度（Rms） 具有原子力显微镜，并且在不小于1μm-1的空间频率下具有不大于10nm 4的功率谱密度。
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20.发明授权Multilayer reflective film formed substrate, reflective mask blank, mask blank, methods of manufacturing the same, reflective mask, and mask 有权多层反射膜形成基板，反光掩模板，掩模板，制造方法，反射掩模和掩模公开(公告)号：US09423685B2
公开(公告)日：2016-08-23
申请号：US14355477
申请日：2013-02-05
Applicant: HOYA CORPORATION
Inventor： Tsutomu Shoki , Kazuhiro Hamamoto
Abstract: Provided is a multilayer reflective film formed substrate formed with a fiducial mark for accurately managing coordinates of defects. A multilayer reflective film formed substrate is formed with a multilayer reflective film, which is adapted to reflect EUV light, on a substrate and a fiducial mark which serves as a reference for a defect position in defect information is formed on the multilayer reflective film. The fiducial mark includes a main mark for determining a reference point for the defect position and auxiliary marks arranged around the main mark. The main mark has a point-symmetrical shape and has a portion with a width of 200 nm or more and 10 μm or less with respect to a scanning direction of an electron beam writing apparatus or defect inspection light.
Abstract translation: 提供了形成有用于准确地管理缺陷坐标的基准标记的多层反射膜形成基板。 在多层反射膜形成基板上形成多层反射膜，该多层反射膜适用于反射EUV光，并且在多层反射膜上形成用作缺陷信息中缺陷位置的基准的基准标记。 基准标记包括用于确定缺陷位置的参考点和布置在主标记周围的辅助标记的主标记。 主标记具有点对称形状，并且具有相对于电子束写入装置的扫描方向或缺陷检查光的宽度为200nm以上且10μm以下的部分。
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