Invention Grant
US09494851B2 Mask blank substrate, substrate with multilayer reflection film, transmissive mask blank, reflective mask, and semiconductor device fabrication method
有权
掩模空白基板，具有多层反射膜的基板，透射掩模板，反射掩模和半导体器件制造方法
- Patent Title: Mask blank substrate, substrate with multilayer reflection film, transmissive mask blank, reflective mask, and semiconductor device fabrication method
- Patent Title (中): 掩模空白基板，具有多层反射膜的基板，透射掩模板，反射掩模和半导体器件制造方法
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Application No.: US14348413Application Date: 2013-03-28
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Publication No.: US09494851B2Publication Date: 2016-11-15
- Inventor: Toshihiko Orihara , Kazuhiro Hamamoto , Hirofumi Kozakai , Youichi Usui , Tsutomu Shoki , Junichi Horikawa
- Applicant: HOYA CORPORATION
- Applicant Address: JP Tokyo
- Assignee: HOYA CORPORATION
- Current Assignee: HOYA CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Sughrue Mion, PLLC
- Priority: JP2012-074626 20120328
- International Application: PCT/JP2013/059199 WO 20130328
- International Announcement: WO2013/146990 WO 20131003
- Main IPC: G03F1/50
- IPC: G03F1/50 ; G03F1/22 ; G02B5/08 ; G03F1/48 ; B82Y10/00 ; B82Y40/00 ; G03F7/20 ; C03C3/06 ; C03C17/34 ; C03C17/36 ; C03C23/00
Abstract:
Disclosed is a mask blank substrate for use in lithography, wherein the main surface on which the transfer pattern of the substrate is formed has a root mean square roughness (Rms) of not more than 0.15 nm obtained by measuring an area of 1 μm×1 μm with an atomic force microscope, and has a power spectrum density of not more than 10 nm4 at a spatial frequency of not less than 1 μm−1.
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