公开(公告)号：US20150137301A1

公开(公告)日：2015-05-21

申请号：US14406851

申请日：2013-02-21

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Yasuhito Yoneta ,  Ryoto Takisawa ,  Shingo Ishihara ,  Hisanori Suzuki ,  Masaharu Muramatsu

IPC: H01L27/146

CPC classification number: H01L27/1469 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14687 ,  H01L27/148

Abstract: A method for manufacturing a solid-state imaging device comprises a first step of preparing an imaging element including a second principal surface having an electrode arranged thereon, and a photoelectric converter part configured to photoelectrically convert the incident energy line so as to generate a signal charge; a second step of preparing a support substrate, provided with at least one through hole extending in a thickness direction thereof, having a third principal surface; a third step of aligning the imaging element and the support substrate with each other so that the one electrode is exposed out of the one through hole while the second and third principal surfaces oppose each other and joining the imaging element and the support substrate to each other; and a fourth step of embedding a conductive member in the through hole after the third step.

Abstract translation: 一种制造固态成像装置的方法包括：准备包括其上布置有电极的第二主表面的成像元件的第一步骤和被配置为对入射的能量线进行光电转换以产生信号电荷的光电转换器部分 ; 制备具有至少一个沿其厚度方向延伸的通孔的支撑衬底的第二步骤，具有第三主表面; 使成像元件和支撑基板彼此对准的第三步骤，使得一个电极从一个通孔露出，同时第二和第三主表面彼此相对并且将成像元件和支撑基板彼此接合 ; 以及在第三步骤之后将通孔嵌入到通孔中的第四步骤。

公开(公告)号：US20240170528A1

公开(公告)日：2024-05-23

申请号：US18428396

申请日：2024-01-31

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Shin-ichiro TAKAGI ,  Mitsuhito Mase ,  Jun Hiramitsu ,  Yasuhito Yoneta ,  Masaharu Muramatsu

IPC: H01L27/148 ,  H01L27/146 ,  H04N25/71 ,  H04N25/73

CPC classification number: H01L27/14843 ,  H01L27/14603 ,  H01L27/14607 ,  H01L27/14812 ,  H04N25/71 ,  H01L27/14831 ,  H04N25/73

Abstract: The photosensitive region includes a first impurity region and a second impurity region having a higher impurity concentration than that of the first impurity region. The photosensitive region includes one end positioned away from the transfer section in the second direction and another end positioned closer to the transfer section in the second direction. A shape of the second impurity region in plan view is line-symmetric with respect to a center line of the photosensitive region along the second direction. A width of the second impurity region in the first direction increases in a transfer direction from the one end to the other end. An increase rate of the width of the second impurity region in each of sections, obtained by dividing the photosensitive region into n sections in the second direction, becomes gradually higher in the transfer direction. Here, n is an integer of two or more.

公开(公告)号：US11862659B2

公开(公告)日：2024-01-02

申请号：US17608212

申请日：2020-07-03

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Masaharu Muramatsu ,  Shin-ichiro Takagi ,  Yasuhito Yoneta

IPC: H01L27/146 ,  H04N25/772 ,  H04N25/778

CPC classification number: H01L27/1464 ,  H04N25/772 ,  H04N25/778

Abstract: A backside incident-type imaging element includes a semiconductor substrate having a front surface and a back surface on an opposite side from the front surface, a ground potential being applied to the semiconductor substrate, and a semiconductor layer formed on the front surface, in which the semiconductor layer has a first element part that includes a light receiving portion generating a signal charge according to incident light from a side of the back surface and outputs a signal voltage corresponding to the signal charge, and a second element part that includes an analog-digital converter converting the signal voltage output from the first element part into a digital signal.

公开(公告)号：US10825730B2

公开(公告)日：2020-11-03

申请号：US16000603

申请日：2018-06-05

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Yasuhito Yoneta ,  Ryoto Takisawa ,  Shingo Ishihara ,  Hisanori Suzuki ,  Masaharu Muramatsu

IPC: H01L27/146 ,  H01L21/77 ,  H04N5/369

Abstract: A method for manufacturing a solid-state imaging device comprises a first step of preparing an imaging element having a second principal surface having an electrode arranged thereon, and a photoelectric converter part configured to photoelectrically convert the incident energy line so as to generate a signal charge; a second step of preparing a support substrate, provided with a through hole extending in a thickness direction thereof, having a third principal surface; a third step of aligning the imaging element and the support substrate with each other so that the electrode is exposed out of the through hole while the second and third principal surfaces oppose each other and joining the imaging element and the support substrate to each other; and a fourth step of arranging a conductive ball-shaped member in the through hole and electrically connecting the ball-shaped member to the electrode after the third step.

公开(公告)号：US20150155314A1

公开(公告)日：2015-06-04

申请号：US14407662

申请日：2013-03-01

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Shin-ichiro Takagi ,  Yasuhito Yoneta ,  Kenichi Sugimoto ,  Hisanori Suzuki ,  Masaharu Muramatsu

IPC: H01L27/146

CPC classification number: H01L27/1462 ,  H01L27/1461 ,  H01L27/14629 ,  H01L27/14806 ,  H01L27/14843 ,  H01L31/02363 ,  H01L31/03529 ,  Y02E10/50

Abstract: A semiconductor substrate is provided with a plurality of photosensitive regions on a first principal surface side. An insulating film has a third principal surface and a fourth principal surface opposed to each other, and is arranged on the semiconductor substrate so that the third principal surface is opposed to the first principal surface. A cross section parallel to a thickness direction of the semiconductor substrate, of a region corresponding to each photosensitive region in the first principal surface is a corrugated shape in which concave curves and convex curves are alternately continuous. A cross section parallel to a thickness direction of the insulating film, of a region corresponding to each photosensitive region in the third principal surface is a corrugated shape in which concave curves and convex curves are alternately continuous corresponding to the first principal surface. The fourth principal surface is flat.

Abstract translation: 半导体衬底在第一主表面侧上设置有多个感光区域。 绝缘膜具有彼此相对的第三主表面和第四主表面，并且布置在半导体衬底上，使得第三主表面与第一主表面相对。 与半导体衬底的厚度方向平行的与第一主表面中的每个感光区域对应的区域的横截面是凹曲线和凸曲线交替连续的波纹形状。 与第三主表面中的每个感光区域相对应的区域平行于绝缘膜的厚度方向的横截面是其中凹曲线和凸曲线对应于第一主表面交替连续的波纹形状。 第四主要表面是平的。

公开(公告)号：US11942506B2

公开(公告)日：2024-03-26

申请号：US16643110

申请日：2018-07-19

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Shin-ichiro Takagi ,  Mitsuhito Mase ,  Jun Hiramitsu ,  Yasuhito Yoneta ,  Masaharu Muramatsu

IPC: H01L27/148 ,  H01L27/146 ,  H04N25/71 ,  H04N25/73

CPC classification number: H01L27/14843 ,  H01L27/14603 ,  H01L27/14607 ,  H01L27/14812 ,  H04N25/71 ,  H01L27/14831 ,  H04N25/73

Abstract: The photosensitive region includes a first impurity region and a second impurity region having a higher impurity concentration than that of the first impurity region. The photosensitive region includes one end positioned away from the transfer section in the second direction and another end positioned closer to the transfer section in the second direction. A shape of the second impurity region in plan view is line-symmetric with respect to a center line of the photosensitive region along the second direction. A width of the second impurity region in the first direction increases in a transfer direction from the one end to the other end. An increase rate of the width of the second impurity region in each of sections, obtained by dividing the photosensitive region into n sections in the second direction, becomes gradually higher in the transfer direction. Here, n is an integer of two or more.

公开(公告)号：US11114489B2

公开(公告)日：2021-09-07

申请号：US16421212

申请日：2019-05-23

Applicant: KLA-Tencor Corporation ,  Hamamatsu Photonics K.K.

Inventor： Yung-Ho Alex Chuang ,  Jingjing Zhang ,  John Fielden ,  David L. Brown ,  Masaharu Muramatsu ,  Yasuhito Yoneta ,  Shinya Otsuka

IPC: H01L27/146

Abstract: An image sensor for electrons or short-wavelength light includes a semiconductor membrane, circuit elements formed on one surface of the semiconductor membrane, and a pure boron layer on the other surface of the semiconductor membrane. The circuit elements are connected by metal interconnects comprising a refractory metal. An anti-reflection or protective layer may be formed on top of the pure boron layer. This image sensor has high efficiency and good stability even under continuous use at high flux for multiple years. The image sensor may be fabricated using CCD (charge coupled device) or CMOS (complementary metal oxide semiconductor) technology. The image sensor may be a two-dimensional area sensor, or a one-dimensional array sensor.

公开(公告)号：US11094547B2

公开(公告)日：2021-08-17

申请号：US15765528

申请日：2016-09-01

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Masaharu Muramatsu ,  Hisanori Suzuki ,  Yasuhito Yoneta ,  Shinya Otsuka ,  Hirotaka Takahashi

IPC: H01L21/288 ,  C23C18/18 ,  H01L23/14 ,  C23C18/16 ,  H01L23/12 ,  H01L23/498 ,  H01L21/768 ,  H01L21/48 ,  H01L21/3205 ,  H01L23/522

Abstract: Provided is a method for producing a wiring structural body provided with a wiring pattern, the method including a first step of forming an insulating layer on a surface of a silicon substrate along at least a region for forming the wiring pattern, a second step of forming a boron layer on the insulating layer along the region, and a third step of forming a metal layer on the boron layer by plating.

公开(公告)号：US10573556B2

公开(公告)日：2020-02-25

申请号：US15765536

申请日：2016-09-01

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Masaharu Muramatsu ,  Hisanori Suzuki ,  Yasuhito Yoneta ,  Shinya Otsuka ,  Hirotaka Takahashi

IPC: H01L21/768 ,  H01L23/48 ,  H01L23/498 ,  H01L23/538 ,  H01L21/48 ,  H01L23/14 ,  H01L21/3205 ,  H01L23/522 ,  H05K1/11 ,  H01L23/12 ,  H01L23/32 ,  H05K3/40

Abstract: Provided is a wiring structural body provided with a wiring pattern including a through-wiring pattern, the wiring structural body including: a silicon substrate having a through hole in which the through-wiring pattern is disposed; an insulating layer provided on a surface of the silicon substrate including an inner surface of the through hole along at least the wiring pattern; a boron layer provided on the insulating layer along the wiring pattern; and a metal layer provided on the boron layer.

公开(公告)号：US10483302B2

公开(公告)日：2019-11-19

申请号：US15502003

申请日：2015-08-03

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Shin-ichiro Takagi ,  Kentaro Maeta ,  Yasuhito Yoneta ,  Hisanori Suzuki ,  Masaharu Muramatsu

IPC: H01L27/146 ,  H01L31/02 ,  H01L27/148 ,  H04N5/372

Abstract: A solid-state imaging device includes a plurality of photoelectric converting units and a plurality of charge-accumulating units each accumulating a charge generated in the corresponding photoelectric converting unit. The photoelectric converting unit includes a photosensitive region that generates the charge in accordance with light incidence, and an electric potential gradient forming unit that accelerates migration of charge in a second direction in the photosensitive region. The charge-accumulating unit includes: a plurality of regions (semiconductor layers) having an impurity concentration gradually changed in one way in the second direction, and electrodes adapted to apply electric fields to the plurality of regions. Each of the electrodes is disposed over the plurality of regions having the impurity concentration gradually varied.