公开(公告)号：US20190386054A1

公开(公告)日：2019-12-19

申请号：US16421212

申请日：2019-05-23

Applicant: KLA-Tencor Corporation ,  Hamamatsu Photonics K.K.

Inventor： Yung-Ho Alex Chuang ,  Jingling Zhang ,  John Fielden ,  David L. Brown ,  Masaharu Muramatsu ,  Yasuhito Yoneta ,  Shinya Otsuka

IPC: H01L27/146

Abstract: An image sensor for electrons or short-wavelength light includes a semiconductor membrane, circuit elements formed on one surface of the semiconductor membrane, and a pure boron layer on the other surface of the semiconductor membrane. The circuit elements are connected by metal interconnects comprising a refractory metal. An anti-reflection or protective layer may be formed on top of the pure boron layer. This image sensor has high efficiency and good stability even under continuous use at high flux for multiple years. The image sensor may be fabricated using CCD (charge coupled device) or CMOS (complementary metal oxide semiconductor) technology. The image sensor may be a two-dimensional area sensor, or a one-dimensional array sensor.

公开(公告)号：US09635293B2

公开(公告)日：2017-04-25

申请号：US14774141

申请日：2014-02-18

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Shinya Otsuka ,  Hisanori Suzuki ,  Masaharu Muramatsu

IPC: H04N5/372 ,  H04N5/378 ,  H01L27/148 ,  H04N5/3725

CPC classification number: H04N5/372 ,  H01L27/14812 ,  H04N5/37213 ,  H04N5/3725 ,  H04N5/378

Abstract: A solid-state imaging device includes photoelectric converting sections transfer sections first buffer sections second buffer sections first output sections, and second output sections. The photoelectric converting sections generate electric charges in response to incidence of light. The transfer sections transfer the generated electric charges in a first direction or in a second direction opposite thereto in response to three-phase or four-phase drive signals. The first buffer sections and the second buffer sections acquire the electric charges transferred in the first and second directions, respectively, by the transfer sections and transfer the acquired electric charges in the first and second directions, respectively, in response to two-phase drive signals. The first output sections and the second output sections acquire the electric charges transferred from the first buffer sections and from the second buffer sections respectively, and output signals according to the acquired electric charges.

公开(公告)号：US20150200216A1

公开(公告)日：2015-07-16

申请号：US14591325

申请日：2015-01-07

Applicant: KLA-Tencor Corporation ,  Hamamatsu Photonics K.K.

Inventor： Masaharu Muramatsu ,  Hisanori Suzuki ,  Yasuhito Yoneta ,  Shinya Otsuka ,  Jehn-Huar Chem ,  David L. Brown ,  Yung-Ho Alex Chuang ,  John Fielden ,  Venkatraman Iyer

IPC: H01L27/146

CPC classification number: H01L27/1462 ,  H01L27/1464 ,  H01L27/14685 ,  H01L27/14687

Abstract: An image sensor for short-wavelength light includes a semiconductor membrane, circuit elements formed on one surface of the semiconductor membrane, and a pure boron layer on the other surface of the semiconductor membrane. An anti-reflection or protective layer is formed on top of the pure boron layer. This image sensor has high efficiency and good stability even under continuous use at high flux for multiple years. The image sensor may be fabricated using CCD (charge coupled device) or CMOS (complementary metal oxide semiconductor) technology. The image sensor may be a two-dimensional area sensor, or a one-dimensional array sensor.

Abstract translation: 用于短波长光的图像传感器包括半导体膜，形成在半导体膜的一个表面上的电路元件和在半导体膜的另一个表面上的纯硼层。 在纯硼层的顶部形成防反射层或保护层。 该图像传感器具有高效率和良好的稳定性，即使在高通量下连续使用多年。 图像传感器可以使用CCD（电荷耦合器件）或CMOS（互补金属氧化物半导体）技术来制造。 图像传感器可以是二维区域传感器或一维阵列传感器。

公开(公告)号：US11114489B2

公开(公告)日：2021-09-07

申请号：US16421212

申请日：2019-05-23

Applicant: KLA-Tencor Corporation ,  Hamamatsu Photonics K.K.

Inventor： Yung-Ho Alex Chuang ,  Jingjing Zhang ,  John Fielden ,  David L. Brown ,  Masaharu Muramatsu ,  Yasuhito Yoneta ,  Shinya Otsuka

IPC: H01L27/146

Abstract: An image sensor for electrons or short-wavelength light includes a semiconductor membrane, circuit elements formed on one surface of the semiconductor membrane, and a pure boron layer on the other surface of the semiconductor membrane. The circuit elements are connected by metal interconnects comprising a refractory metal. An anti-reflection or protective layer may be formed on top of the pure boron layer. This image sensor has high efficiency and good stability even under continuous use at high flux for multiple years. The image sensor may be fabricated using CCD (charge coupled device) or CMOS (complementary metal oxide semiconductor) technology. The image sensor may be a two-dimensional area sensor, or a one-dimensional array sensor.

公开(公告)号：US11094547B2

公开(公告)日：2021-08-17

申请号：US15765528

申请日：2016-09-01

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Masaharu Muramatsu ,  Hisanori Suzuki ,  Yasuhito Yoneta ,  Shinya Otsuka ,  Hirotaka Takahashi

IPC: H01L21/288 ,  C23C18/18 ,  H01L23/14 ,  C23C18/16 ,  H01L23/12 ,  H01L23/498 ,  H01L21/768 ,  H01L21/48 ,  H01L21/3205 ,  H01L23/522

Abstract: Provided is a method for producing a wiring structural body provided with a wiring pattern, the method including a first step of forming an insulating layer on a surface of a silicon substrate along at least a region for forming the wiring pattern, a second step of forming a boron layer on the insulating layer along the region, and a third step of forming a metal layer on the boron layer by plating.

公开(公告)号：US10700116B2

公开(公告)日：2020-06-30

申请号：US16069342

申请日：2016-12-28

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Shinya Otsuka ,  Hisanori Suzuki ,  Masaharu Muramatsu

IPC: H01L27/146 ,  H01L27/144 ,  H01L27/14 ,  H01L27/148 ,  H04N5/372

Abstract: In a back-illuminated solid-state image pickup device, a first group of charge transfer electrodes (vertical shift register) is present in an imaging region, and a second group of charge transfer electrodes (horizontal shift register) is present in a peripheral region around the imaging region. The light incident surface of the semiconductor substrate 4 corresponding to the peripheral region is etched, and an inorganic light shielding substance SH is filled in the etched region. The amount of the inorganic light shielding substance that evaporates and vaporizes under the vacuum environment is extremely small, and the influence on the imaging by the vaporized gas is small.

公开(公告)号：US10573556B2

公开(公告)日：2020-02-25

申请号：US15765536

申请日：2016-09-01

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Masaharu Muramatsu ,  Hisanori Suzuki ,  Yasuhito Yoneta ,  Shinya Otsuka ,  Hirotaka Takahashi

IPC: H01L21/768 ,  H01L23/48 ,  H01L23/498 ,  H01L23/538 ,  H01L21/48 ,  H01L23/14 ,  H01L21/3205 ,  H01L23/522 ,  H05K1/11 ,  H01L23/12 ,  H01L23/32 ,  H05K3/40

Abstract: Provided is a wiring structural body provided with a wiring pattern including a through-wiring pattern, the wiring structural body including: a silicon substrate having a through hole in which the through-wiring pattern is disposed; an insulating layer provided on a surface of the silicon substrate including an inner surface of the through hole along at least the wiring pattern; a boron layer provided on the insulating layer along the wiring pattern; and a metal layer provided on the boron layer.

公开(公告)号：US10283551B2

公开(公告)日：2019-05-07

申请号：US15764492

申请日：2016-07-11

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Masaharu Muramatsu ,  Hisanori Suzuki ,  Yasuhito Yoneta ,  Shinya Otsuka ,  Hirotaka Takahashi

IPC: H01L27/146 ,  H01L31/02 ,  H04N5/369

Abstract: A back-illuminated solid-state imaging element includes a semiconductor substrate which has a front surface and a back surface provided with a recess, and in which a thinned section, which is a bottom section of the recess, is an imaging area, a signal read-out circuit formed on the front surface of the semiconductor substrate, a boron layer formed on at least the back surface of the semiconductor substrate and a lateral surface of the recess, a metal layer formed on the boron layer, and provided with an opening opposing a bottom surface of the recess, and an anti-reflection layer formed on the bottom surface of the recess.

公开(公告)号：US10269842B2

公开(公告)日：2019-04-23

申请号：US15668776

申请日：2017-08-04

Applicant: KLA-Tencor Corporation ,  Hamamatsu Photonics K.K.

Inventor： Masaharu Muramatsu ,  Hisanori Suzuki ,  Yasuhito Yoneta ,  Shinya Otsuka ,  Jehn-Huar Chern ,  David L. Brown ,  Yung-Ho Alex Chuang ,  John Fielden ,  Venkatraman Iyer

IPC: H01L27/146

Abstract: An image sensor for short-wavelength light includes a semiconductor membrane, circuit elements formed on one surface of the semiconductor membrane, and a pure boron layer on the other surface of the semiconductor membrane. An anti-reflection or protective layer is formed on top of the pure boron layer. This image sensor has high efficiency and good stability even under continuous use at high flux for multiple years. The image sensor may be fabricated using CCD (charge coupled device) or CMOS (complementary metal oxide semiconductor) technology. The image sensor may be a two-dimensional area sensor, or a one-dimensional array sensor.

公开(公告)号：US09748294B2

公开(公告)日：2017-08-29

申请号：US14591325

申请日：2015-01-07

Applicant: KLA-Tencor Corporation ,  Hamamatsu Photonics K.K.

Inventor： Masaharu Muramatsu ,  Hisanori Suzuki ,  Yasuhito Yoneta ,  Shinya Otsuka ,  Jehn-Huar Chem ,  David L. Brown ,  Yung-Ho Alex Chuang ,  John Fielden ,  Venkatraman Iyer

IPC: H01L27/146

CPC classification number: H01L27/1462 ,  H01L27/1464 ,  H01L27/14685 ,  H01L27/14687

Abstract: An image sensor for short-wavelength light includes a semiconductor membrane, circuit elements formed on one surface of the semiconductor membrane, and a pure boron layer on the other surface of the semiconductor membrane. An anti-reflection or protective layer is formed on top of the pure boron layer. This image sensor has high efficiency and good stability even under continuous use at high flux for multiple years. The image sensor may be fabricated using CCD (charge coupled device) or CMOS (complementary metal oxide semiconductor) technology. The image sensor may be a two-dimensional area sensor, or a one-dimensional array sensor.