Charged-particle multi-beam exposure apparatus
    11.
    发明申请
    Charged-particle multi-beam exposure apparatus 有权
    带电粒子多光束曝光装置

    公开(公告)号:US20050104013A1

    公开(公告)日:2005-05-19

    申请号:US10969493

    申请日:2004-10-20

    CPC classification number: H01J37/3174 B82Y10/00 B82Y40/00 H01J37/3177

    Abstract: A charged-particle multi-beam exposure apparatus (1) for exposure of a target (41) uses a plurality of beams of electrically charged particles, which propagate along parallel beam paths towards the target (41). For each particle beam an illumination system (10), a pattern definition means (20) and a projection optics system (30) are provided. The illuminating system (10) and/or the projection optics system (30) comprise particle-optical lenses having lens elements (L1, L2, L3, L4, L5) common to more than one particle beam. The pattern definition means (20) defines a multitude of beamlets in the respective particle beam, forming its shape into a desired pattern which is projected onto the target (41), by allowing it to pass only through a plurality of apertures defining the shape of beamlets permeating said apertures, and further comprises a blanking means to switch off the passage of selected beamlets from the respective paths of the beamlets.

    Abstract translation: 用于曝光目标(41)的带电粒子多光束曝光装置(1)使用沿平行光束路径朝向目标(41)传播的多个带电粒子束。 对于每个粒子束,提供照明系统(10),图案定义装置(20)和投影光学系统(30)。 照明系统(10)和/或投影光学系统(30)包括具有多于一个粒子束共有的透镜元件(L 1,L 2,L 3,L 4,L 5)的粒子 - 光学透镜。 图案定义装置(20)在相应的粒子束中限定多个子束,通过使其仅通过限定形状的多个孔而将其形状形成为投射到目标(41)上的期望图案 子束穿透所述孔,并且还包括消隐装置,以切断所选子束从子束的相应路径的通过。

    Charged particle beam exposure system and beam manipulating arrangement
    12.
    发明申请
    Charged particle beam exposure system and beam manipulating arrangement 有权
    带电粒子束曝光系统和光束操纵装置

    公开(公告)号:US20090140160A1

    公开(公告)日:2009-06-04

    申请号:US11988922

    申请日:2006-07-20

    CPC classification number: B82Y10/00 B82Y40/00 H01J37/3174 H01J2237/0435

    Abstract: A beam manipulating arrangement for a multi beam application using charged particles comprises a multi-aperture plate having plural apertures traversed by beams of charged particles. A frame portion of the multi-aperture plate is heated to reduce temperature gradients within the multi-aperture plate. Further, a heat emissivity of a surface of the multi-aperture plate may be higher in some regions as compared to other regions in view of also reducing temperature gradients.

    Abstract translation: 用于使用带电粒子的多光束施加的光束操纵装置包括具有由带电粒子束穿过的多个孔的多孔板。 加热多孔板的框架部分以降低多孔板内的温度梯度。 此外,考虑到降低温度梯度,与其他区域相比,多孔板的表面的发热率在一些区域可能更高。

    Particle-optical projection system
    13.
    发明授权
    Particle-optical projection system 有权
    粒子投影系统

    公开(公告)号:US07388217B2

    公开(公告)日:2008-06-17

    申请号:US11700468

    申请日:2007-01-31

    Abstract: In a particle-optical projection system a pattern is imaged onto a target by means of energetic electrically charged particles. The pattern is represented in a patterned beam of said charged particles emerging from the object plane through at least one cross-over; it is imaged into an image with a given size and distortion. To compensate for the Z-deviation of the image position from the actual positioning of the target (Z denotes an axial coordinate substantially parallel to the optical axis), without changing the size of the image, the system includes a position detector for measuring the Z-position of several locations of the target, and a controller for calculating modifications of selected lens parameters of the final particle-optical lens and controlling said lens parameters according to said modifications.

    Abstract translation: 在粒子光学投影系统中,通过能量带电粒子将图案成像到靶上。 所述图案表示在所述带电粒子的图案化束中,所述带电粒子通过至少一个交叉从对象平面出射; 它被成像为具有给定尺寸和失真的图像。 为了补偿图像位置的Z偏差与目标的实际定位(Z表示基本上平行于光轴的轴向坐标),而不改变图像的尺寸,系统包括用于测量Z的位置检测器 - 位置,以及用于计算最终粒子 - 光学透镜的所选透镜参数的修改并根据所述修改来控制所述透镜参数的控制器。

    Ion irradiation of a target at very high and very low kinetic ion energies
    14.
    发明授权
    Ion irradiation of a target at very high and very low kinetic ion energies 有权
    在非常高和非常低的动力学离子能量下对靶进行离子照射

    公开(公告)号:US06909103B2

    公开(公告)日:2005-06-21

    申请号:US10886463

    申请日:2004-07-07

    Abstract: A particle-beam exposure apparatus (1) for irradiating a target (41) by means of a beam (2) of energetic electrically charged particles comprises: an illumination system (101) for generating and forming said particles into a directed beam (21); a pattern definition means (102) located after the illumination system for positioning a pattern of apertures transparent to the particles in the path of the directed beam, thus forming a patterned beam (22) emerging from the pattern definition means through the apertures; and a projection system (103) positioned after the pattern definition means (102) for projecting the patterned beam (22) onto a target (41) positioned after the projection system. The apparatus further comprises an acceleration/deceleration means (32) containing an electric potential gradient which is oriented substantially parallel to the path of the structured beam and constant over at least a cross-section of the beam.

    Abstract translation: 一种用于通过能量带电粒子的光束(2)照射目标物体的粒子束曝光装置(1)包括:用于将所述粒子产生并形成为定向光束(21)的照明系统(101) ; 位于照明系统之后的图案定义装置(102),用于定位在定向光束的路径中对颗粒透明的孔的图案,从而形成从图案定义装置通过孔排出的图案化的束(22); 以及位于图案定义装置(102)之后的投影系统(103),用于将图案化的光束(22)投影到位于投影系统之后的目标(41)上。 该装置还包括加速/减速装置(32),该加速/减速装置(32)包含电位梯度,该电位梯度基本上平行于结构化波束的路径定向并且在至少横截面上恒定。

    Apparatus for enhancing the lifetime of stencil masks
    15.
    发明授权
    Apparatus for enhancing the lifetime of stencil masks 有权
    用于增加模板掩模寿命的装置

    公开(公告)号:US06858118B2

    公开(公告)日:2005-02-22

    申请号:US10395572

    申请日:2003-03-24

    Abstract: An apparatus for masked ion-beam lithography comprises a mask maintenance module for prolongation of the lifetime of the stencil mask. The module comprises a deposition means for depositing material to the side of the mask irradiated by the lithography beam, with at least one deposition source being positioned in front of the mask, and further comprises a sputter means in which at least one sputter source, positioned in front of the mask holder means and outside the path of the lithography beam, produces a sputter ion beam directed to the mask in order to sputter off material from said mask in a scanning procedure and compensate for inhomogeneity of deposition.

    Abstract translation: 用于掩模离子束光刻的装置包括用于延长模板掩模寿命的掩模维护模块。 该模块包括用于将材料沉积到由光刻光束照射的掩模侧面的沉积装置,其中至少一个沉积源位于掩模的前面,并且还包括溅射装置,其中定位至少一个溅射源 在掩模保持器装置的前面并且在光刻光束的路径之外,产生指向掩模的溅射离子束,以便在扫描过程中从所述掩模溅射材料并补偿沉积的不均匀性。

    Ion irradiation of a target at very high and very low kinetic ion energies
    16.
    发明申请
    Ion irradiation of a target at very high and very low kinetic ion energies 有权
    在非常高和非常低的动力学离子能量下对靶进行离子照射

    公开(公告)号:US20050012052A1

    公开(公告)日:2005-01-20

    申请号:US10886463

    申请日:2004-07-07

    Abstract: A particle-beam exposure apparatus (1) for irradiating a target (41) by means of a beam (2) of energetic electrically charged particles comprises: an illumination system (101) for generating and forming said particles into a directed beam (21); a pattern definition means (102) located after the illumination system for positioning a pattern of apertures transparent to the particles in the path of the directed beam, thus forming a patterned beam (22) emerging from the pattern definition means through the apertures; and a projection system (103) positioned after the pattern definition means (102) for projecting the patterned beam (22) onto a target (41) positioned after the projection system. The apparatus further comprises an acceleration/ deceleration means (32) containing an electric potential gradient which is oriented substantially parallel to the path of the structured beam and constant over at least a cross-section of the beam.

    Abstract translation: 一种用于通过能量带电粒子的光束(2)照射目标物体的粒子束曝光装置(1)包括:用于将所述粒子产生并形成为定向光束(21)的照明系统(101) ; 位于照明系统之后的图案定义装置(102),用于定位在定向光束的路径中对颗粒透明的孔的图案,从而形成从图案定义装置通过孔排出的图案化的束(22); 以及位于图案定义装置(102)之后的投影系统(103),用于将图案化的光束(22)投影到位于投影系统之后的目标(41)上。 该装置还包括加速/减速装置(32),该加速/减速装置(32)包含电位梯度,该电位梯度基本上平行于结构化波束的路径定向并且在至少横截面上恒定。

    Maskless particle-beam system for exposing a pattern on a substrate
    17.
    发明授权
    Maskless particle-beam system for exposing a pattern on a substrate 有权
    用于在衬底上露出图案的无掩模粒子束系统

    公开(公告)号:US06768125B2

    公开(公告)日:2004-07-27

    申请号:US10337903

    申请日:2003-01-08

    CPC classification number: B82Y10/00 B82Y40/00 H01J37/045 H01J37/3174

    Abstract: A device (102) for defining a pattern, for use in a particle-beam exposure apparatus (100), said device adapted to be irradiated with a beam (lb,pb) of electrically charged particles and let pass the beam only through a plurality of apertures, comprises an aperture array means (203) and a blanking means (202). The aperture array means (203) has a plurality of apertures (21,230) of identical shape defining the shape of beamlets (bm). The blanking means (202) serves to switch off the passage of selected beamlets; it has a plurality of openings (220), each corresponding to a respective aperture (230) of the aperture array means (203) and being provided with a deflection means (221) controllable to deflect particles radiated through the opening off their path (p1) to an absorbing surface within said exposure apparatus (100). The apertures (21) are arranged on the blanking and aperture array means (202,203) within a pattern definition field (pf) being composed of a plurality of staggered lines (p1) of apertures. Each of the lines (p1) comprises alternately first segments (sf) which are free of apertures and second segments (af) which each comprise a number of apertures spaced apart by a row offset (pm), said row offset being a multiple of the width (w) of apertures, the length (A) of said first segments (sf) being greater than the row offset. In front of the blanking means (202) as seen in the direction of the particle beam, a cover means (201) is provided having a plurality of openings (210), each corresponding to a respective opening (230) of the blanking means and having a width (w1) which is smaller than the width (w2) of the openings (220) of the blanking array means.

    Abstract translation: 一种用于限定用于粒子束曝光设备(100)的图案的设备(102),所述设备适于用带电粒子的光束(lb,pb)照射,并且仅使光束通过多个 的孔径包括孔径阵列装置(203)和消隐装置(202)。 孔径阵列装置(203)具有限定子束(bm)形状的相同形状的多个孔(21,230)。 消隐装置(202)用于切断所选子束的通过; 它具有多个开口(220),每个开口对应于孔阵列装置(203)的相应孔径(230),并且设置有偏转装置(221),该偏转装置可控制,以使通过开口辐射的颗粒偏离其路径(p1 )到所述曝光装置(100)内的吸收表面。 孔(21)布置在由多个交错的孔(p1)组成的图案定义区域(pf)内的消隐和孔径阵列装置(202,203)上。 线(p1)中的每一个交替地包括没有孔的第一段(sf)和第二段(af),每个段包括通过行偏移(pm)间隔开的多个孔,所述行偏移是 孔的宽度(w),所述第一段(sf)的长度(A)大于行偏移。 在沿着该粒子束的方向观察的消隐装置(202)的前面,提供具有多个开口(210)的盖装置(201),每个开口对应于消隐装置的相应开口(230) 具有比消隐阵列装置的开口(220)的宽度(w2)小的宽度(w1)。

    Charged-particle exposure apparatus
    18.
    发明授权
    Charged-particle exposure apparatus 有权
    带电粒子曝光装置

    公开(公告)号:US07737422B2

    公开(公告)日:2010-06-15

    申请号:US11816353

    申请日:2006-02-16

    Abstract: A particle-beam projection processing apparatus for irradiating a target, with an illumination system for forming a wide-area illuminating beam of energetic electrically charged particles; a pattern definition means for positioning an aperture pattern in the path of the illuminating beam; and a projection system for projecting the beam thus patterned onto a target to be positioned after the projection system. A foil located across the path of the patterned beam is positioned between the pattern definition means and the position of the target at a location close to an image of the aperture pattern formed by the projection system.

    Abstract translation: 一种用于照射目标的粒子束投影处理装置,具有用于形成能量带电粒子的广域照明光束的照明系统; 用于将光圈图案定位在照明光束的路径中的图案定义装置; 以及投影系统,用于将如此图案化的光束投影到待投影系统上的待定位的靶上。 位于图案化光束的路径上的箔位于图案定义装置之间并且位于靠近由投影系统形成的孔径图案的图像的位置处的目标的位置。

    Charged Particle System
    19.
    发明申请
    Charged Particle System 有权
    带电粒子系统

    公开(公告)号:US20080210887A1

    公开(公告)日:2008-09-04

    申请号:US12090636

    申请日:2006-10-20

    Abstract: A charged particle system comprises a particle source for generating a beam of charged particles and a particle-optical projection system. The particle-optical projection system comprises a focusing first magnetic lens (403) comprising an outer pole piece (411) having a radial inner end (411′), and an inner pole piece (412) having a lowermost end (412′) disposed closest to the radial inner end of the outer pole piece, a gap being formed by those; a focusing electrostatic lens (450) having at least a first electrode (451) and a second electrode (450) disposed in a region of the gap; and a controller (C) configured to control a focusing power of the first electrostatic lens based on a signal indicative of a distance of a surface of a substrate from a portion of the first magnetic lens disposed closest to the substrate.

    Abstract translation: 带电粒子系统包括用于产生带电粒子束的粒子源和粒子光学投影系统。 粒子光学投影系统包括聚焦第一磁性透镜(403),其包括具有径向内端(411')的外极片(411)和设置有最下端(412')的内极片(412) 最靠近外极片的径向内端的间隙由它们形成; 具有至少设置在所述间隙的区域中的第一电极(451)和第二电极(450)的聚焦静电透镜(450) 以及控制器(C),被配置为基于表示基板的表面距离最靠近基板设置的第一磁性透镜的部分的距离的信号来控制第一静电透镜的聚焦能力。

    Charged-particle multi-beam exposure apparatus
    20.
    发明授权
    Charged-particle multi-beam exposure apparatus 有权
    带电粒子多光束曝光装置

    公开(公告)号:US07214951B2

    公开(公告)日:2007-05-08

    申请号:US10969493

    申请日:2004-10-20

    CPC classification number: H01J37/3174 B82Y10/00 B82Y40/00 H01J37/3177

    Abstract: A charged-particle multi-beam exposure apparatus (1) for exposure of a target (41) uses a plurality of beams of electrically charged particles, which propagate along parallel beam paths towards the target (41). For each particle beam an illumination system (10), a pattern definition means (20) and a projection optics system (30) are provided. The illuminating system (10) and/or the projection optics system (30) comprise particle-optical lenses having lens elements (L1, L2, L3, L4, L5) common to more than one particle beam. The pattern definition means (20) defines a multitude of beamlets in the respective particle beam, forming its shape into a desired pattern which is projected onto the target (41), by allowing it to pass only through a plurality of apertures defining the shape of beamlets permeating said apertures, and further comprises a blanking means to switch off the passage of selected beamlets from the respective paths of the beamlets.

    Abstract translation: 用于曝光目标(41)的带电粒子多光束曝光装置(1)使用沿平行光束路径朝向目标(41)传播的多个带电粒子束。 对于每个粒子束,提供照明系统(10),图案定义装置(20)和投影光学系统(30)。 照明系统(10)和/或投影光学系统(30)包括具有多于一个粒子束共有的透镜元件(L 1,L 2,L 3,L 4,L 5)的粒子 - 光学透镜。 图案定义装置(20)在相应的粒子束中限定多个子束,通过使其仅通过限定形状的多个孔而将其形状形成为投射到目标(41)上的期望图案 子束穿透所述孔,并且还包括消隐装置,以切断所选子束从子束的相应路径的通过。

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