Charged-Particle Exposure Apparatus
    11.
    发明申请
    Charged-Particle Exposure Apparatus 有权
    带电粒子曝光装置

    公开(公告)号:US20080258084A1

    公开(公告)日:2008-10-23

    申请号:US11816353

    申请日:2006-02-16

    Abstract: A particle-beam projection processing apparatus for irradiating a target, with an illumination system for forming a wide-area illuminating beam of energetic electrically charged particles; a pattern definition means for positioning an aperture pattern in the path of the illuminating beam; and a projection system for projecting the beam thus patterned onto a target to be positioned after the projection system. A foil located across the path of the patterned beam is positioned between the pattern definition means and the position of the target at a location close to an image of the aperture pattern formed by the projection system.

    Abstract translation: 一种用于照射目标的粒子束投影处理装置,具有用于形成能量带电粒子的广域照明光束的照明系统; 用于将光圈图案定位在照明光束的路径中的图案定义装置; 以及投影系统,用于将如此图案化的光束投影到待投影系统上的待定位的靶上。 位于图案化光束的路径上的箔位于图案定义装置之间并且位于靠近由投影系统形成的孔径图案的图像的位置处的目标的位置。

    Particle-optical projection system
    12.
    发明申请
    Particle-optical projection system 有权
    粒子投影系统

    公开(公告)号:US20070125956A1

    公开(公告)日:2007-06-07

    申请号:US11700468

    申请日:2007-01-31

    Abstract: In a particle-optical projection system a pattern is imaged onto a target by means of energetic electrically charged particles. The pattern is represented in a patterned beam of said charged particles emerging from the object plane through at least one cross-over; it is imaged into an image with a given size and distortion. To compensate for the Z-deviation of the image position from the actual positioning of the target (Z denotes an axial coordinate substantially parallel to the optical axis), without changing the size of the image, the system includes a position detector for measuring the Z-position of several locations of the target, and a controller for calculating modifications of selected lens parameters of the final particle-optical lens and controlling said lens parameters according to said modifications.

    Abstract translation: 在粒子光学投影系统中,通过能量带电粒子将图案成像到靶上。 所述图案表示在所述带电粒子的图案化束中,所述带电粒子通过至少一个交叉从对象平面出射; 它被成像为具有给定尺寸和失真的图像。 为了补偿图像位置的Z偏差与目标的实际定位(Z表示基本上平行于光轴的轴向坐标),而不改变图像的尺寸,系统包括用于测量Z的位置检测器 - 位置,以及用于计算最终粒子 - 光学透镜的所选透镜参数的修改并根据所述修改来控制所述透镜参数的控制器。

    Charged-particle exposure apparatus
    13.
    发明授权
    Charged-particle exposure apparatus 有权
    带电粒子曝光装置

    公开(公告)号:US07737422B2

    公开(公告)日:2010-06-15

    申请号:US11816353

    申请日:2006-02-16

    Abstract: A particle-beam projection processing apparatus for irradiating a target, with an illumination system for forming a wide-area illuminating beam of energetic electrically charged particles; a pattern definition means for positioning an aperture pattern in the path of the illuminating beam; and a projection system for projecting the beam thus patterned onto a target to be positioned after the projection system. A foil located across the path of the patterned beam is positioned between the pattern definition means and the position of the target at a location close to an image of the aperture pattern formed by the projection system.

    Abstract translation: 一种用于照射目标的粒子束投影处理装置,具有用于形成能量带电粒子的广域照明光束的照明系统; 用于将光圈图案定位在照明光束的路径中的图案定义装置; 以及投影系统,用于将如此图案化的光束投影到待投影系统上的待定位的靶上。 位于图案化光束的路径上的箔位于图案定义装置之间并且位于靠近由投影系统形成的孔径图案的图像的位置处的目标的位置。

    Charged Particle System
    14.
    发明申请
    Charged Particle System 有权
    带电粒子系统

    公开(公告)号:US20080210887A1

    公开(公告)日:2008-09-04

    申请号:US12090636

    申请日:2006-10-20

    Abstract: A charged particle system comprises a particle source for generating a beam of charged particles and a particle-optical projection system. The particle-optical projection system comprises a focusing first magnetic lens (403) comprising an outer pole piece (411) having a radial inner end (411′), and an inner pole piece (412) having a lowermost end (412′) disposed closest to the radial inner end of the outer pole piece, a gap being formed by those; a focusing electrostatic lens (450) having at least a first electrode (451) and a second electrode (450) disposed in a region of the gap; and a controller (C) configured to control a focusing power of the first electrostatic lens based on a signal indicative of a distance of a surface of a substrate from a portion of the first magnetic lens disposed closest to the substrate.

    Abstract translation: 带电粒子系统包括用于产生带电粒子束的粒子源和粒子光学投影系统。 粒子光学投影系统包括聚焦第一磁性透镜(403),其包括具有径向内端(411')的外极片(411)和设置有最下端(412')的内极片(412) 最靠近外极片的径向内端的间隙由它们形成; 具有至少设置在所述间隙的区域中的第一电极(451)和第二电极(450)的聚焦静电透镜(450) 以及控制器(C),被配置为基于表示基板的表面距离最靠近基板设置的第一磁性透镜的部分的距离的信号来控制第一静电透镜的聚焦能力。

    Charged-particle multi-beam exposure apparatus
    15.
    发明授权
    Charged-particle multi-beam exposure apparatus 有权
    带电粒子多光束曝光装置

    公开(公告)号:US07214951B2

    公开(公告)日:2007-05-08

    申请号:US10969493

    申请日:2004-10-20

    CPC classification number: H01J37/3174 B82Y10/00 B82Y40/00 H01J37/3177

    Abstract: A charged-particle multi-beam exposure apparatus (1) for exposure of a target (41) uses a plurality of beams of electrically charged particles, which propagate along parallel beam paths towards the target (41). For each particle beam an illumination system (10), a pattern definition means (20) and a projection optics system (30) are provided. The illuminating system (10) and/or the projection optics system (30) comprise particle-optical lenses having lens elements (L1, L2, L3, L4, L5) common to more than one particle beam. The pattern definition means (20) defines a multitude of beamlets in the respective particle beam, forming its shape into a desired pattern which is projected onto the target (41), by allowing it to pass only through a plurality of apertures defining the shape of beamlets permeating said apertures, and further comprises a blanking means to switch off the passage of selected beamlets from the respective paths of the beamlets.

    Abstract translation: 用于曝光目标(41)的带电粒子多光束曝光装置(1)使用沿平行光束路径朝向目标(41)传播的多个带电粒子束。 对于每个粒子束,提供照明系统(10),图案定义装置(20)和投影光学系统(30)。 照明系统(10)和/或投影光学系统(30)包括具有多于一个粒子束共有的透镜元件(L 1,L 2,L 3,L 4,L 5)的粒子 - 光学透镜。 图案定义装置(20)在相应的粒子束中限定多个子束,通过使其仅通过限定形状的多个孔而将其形状形成为投射到目标(41)上的期望图案 子束穿透所述孔,并且还包括消隐装置,以切断所选子束从子束的相应路径的通过。

    Charged-particle multi-beam exposure apparatus

    公开(公告)号:US07041992B2

    公开(公告)日:2006-05-09

    申请号:US10969493

    申请日:2004-10-20

    Abstract: A charged-particle multi-beam exposure apparatus (1) for exposure of a target (41) uses a plurality of beams of electrically charged particles, which propagate along parallel beam paths towards the target (41). For each particle beam an illumination system (10), a pattern definition means (20) and a projection optics system (30) are provided. The illuminating system (10) and/or the projection optics system (30) comprise particle-optical lenses having lens elements (L1, L2, L3, L4, L5) common to more than one particle beam. The pattern definition means (20) defines a multitude of beamlets in the respective particle beam, forming its shape into a desired pattern which is projected onto the target (41), by allowing it to pass only through a plurality of apertures defining the shape of beamlets permeating said apertures, and further comprises a blanking means to switch off the passage of selected beamlets from the respective paths of the beamlets.

    Particle multibeam lithography
    20.
    发明授权
    Particle multibeam lithography 有权
    粒子多光刻光刻

    公开(公告)号:US06989546B2

    公开(公告)日:2006-01-24

    申请号:US09375627

    申请日:1999-08-17

    Abstract: In a particle multibeam lithography apparatus an illumination system (242) having a particle source (203) produces an illuminating beam (205) of electrically charged particles, and a multibeam optical system (208) positioned after the illumination system (242) and comprising at least one aperture plate having an array of a plurality of apertures to form a plurality of sub-beams focuses the sub-beams onto the surface of a substrate (220), wherein for each sub-beam (207) a deflection unit (210) is positioned within the multibeam optical system and adapted to correct individual imaging aberrations of the respective sub-beam with respect to the desired target position and/or position the sub-beam during a writing process an the substrate surface. Preferably, for each sub-beam the respective aperture of the first aperture plate defines the size and shape of the sub-beam cross-section and the multibeam optical system produces a demagnified image of the aperture on the substrate surface, with a demagnification of at least 20:1.

    Abstract translation: 在粒子多光刻光刻设备中,具有粒子源(203)的照明系统(242)产生带电粒子的照明光束(205)和位于照明系统(242)之后的多光束光学系统(208) 具有多个孔的阵列以形成多个子光束的至少一个孔板将所述子光束聚焦到衬底(220)的表面上,其中对于每个子光束(207),偏转单元(210) 被定位在多光束光学系统内,并且适于相对于期望的目标位置校正各个子光束的各个成像像差和/或在写入过程期间将子光束定位在衬底表面上。 优选地,对于每个子光束,第一孔径板的相应孔径限定了子束横截面的尺寸和形状,并且多光束光学系统产生基板表面上的孔的缩小图像, 至少20:1。

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