Abstract:
The present disclosure discloses a thin film transistor, a method for manufacturing thereof, an array substrate and a display device. The method for manufacturing the thin film transistor includes: forming a nanowire active layer on one side of a base substrate; forming a conductive protective layer on one side of the nanowire active layer away from the base substrate; forming an insulating layer on one side of the protective layer away from the nanowire active layer; etching the insulating layer using a dry etching process to form a first via hole exposing a first region of the protective layer and a second via hole exposing a second region of the protective layer; and forming a source-drain layer on one side of the insulating layer away from the protective layer, wherein the source-drain layer includes a first electrode and a second electrode.
Abstract:
A display panel is provided, including a substrate on a base, a transistor stack on the substrate, and a fluorescent layer between the base and the transistor stack. The fluorescent layer is configured to prevent light from damaging an active layer in the transistor stack in a laser lift-off process, and an orthographic projection of the fluorescent layer on the base overlaps an orthographic projection of the active layer on the base. A display device comprising the display panel, and a manufacturing method of the display panel are further provided.
Abstract:
The disclosure relates to an array substrate and a manufacturing method therefor, a display panel, and a display device. The array substrate comprises a base substrate, and a lead-out line and an inorganic insulating layer which are located on one side of the base substrate; the base substrate is provided with a plurality of connection vias penetrating the base substrate and filled with a first conductive material; the inorganic insulating layer is provided with a first via and a second via, the first via penetrating to the first conductive material, and the second via penetrating to the lead-out line; a second conductive layer is disposed on the side, away from the base substrate, of the first via, the second via and the inorganic insulating layer, such that the first conductive material and the lead-out line are electrically connected through the second conductive layer.
Abstract:
A photosensitive sensor and a method of manufacturing the photosensitive sensor are disclosed. The photosensitive sensor includes a thin film transistor and a photosensitive element on a substrate, wherein the photosensitive element includes a first electrode, a second electrode, and a photosensitive layer between the first electrode and the second electrode. The second electrode is connected to a drain electrode of the thin film transistor. An orthographic projection of an active layer of the thin film transistor on the substrate is within an orthographic projection of the second electrode on the substrate. The second electrode includes at least two stacked conductive layers, at least one of the at least two stacked conductive layers being a light shielding metal layer.
Abstract:
Disclosed are a curved display device and a manufacturing method therefor. The curved display device includes: an array substrate and an opposite substrate arranged opposite to each other, and a liquid crystal layer located between the array substrate and the opposite substrate, wherein on a side, away from the liquid crystal layer, of the array substrate and/or the opposite substrate, a plurality of piezoelectric sensors parallel to each other and a piezoelectric control chip in electrical signal connection with the piezoelectric sensors are respectively provided.
Abstract:
Embodiments of the disclosure disclose an array substrate and a fabrication method thereof, and a display device. The fabrication method of the array substrate comprises: forming a thin film transistor; forming a passivation layer covering the thin film transistor, the passivation layer having a via hole and the via hole exposing at least a portion of a drain electrode of the thin film transistor; forming a via-hole conductive layer, the via-hole conductive layer covering the portion of the drain electrode exposed at the via hole and connected to the drain electrode; treating the via-hole conductive layer, so that a reflectivity of the via-hole conductive layer is lower than a reflectivity of the drain electrode; and forming a pixel electrode, the pixel electrode being connected with the drain electrode through the via-hole conductive layer.
Abstract:
The present disclosure relates to the field of display technology, and proposes a display panel, a preparation method thereof, and a display apparatus. The display panel includes an array substrate, a planarization layer group, and a plurality of sub-pixels. The array substrate includes a switch array formed by a plurality of switch units. The planarization layer group is provided on the array substrate, and nano-scale grooves are provided on the planarization layer group. The sub-pixels are provided on a side of the planarization layer group away from the array substrate. The sub-pixel includes a plurality of first electrodes, wherein the first electrode is connected to the switch unit of the array substrate, a nano-scale second gap is provided between two adjacent first electrodes, and an orthographic projection of the second gap on the array substrate is located within an orthographic projection of the groove on the array substrate.
Abstract:
Disclosed are a fingerprint recognition sensor, a manufacturing method, and a display device. The fingerprint recognition sensor includes a base substrate, a thin film transistor, on a side of the base substrate; and a photosensitive element, on a side of the base substrate away from the thin film transistor, the thin film transistor, the base substrate, and the photosensitive element are sequentially stacked in a thickness direction perpendicular to the base substrate, the base substrate includes a conductive structure penetrating through the base substrate in the thickness direction perpendicular to the base substrate, and the photosensitive element is connected with the thin film transistor through the conductive structure.
Abstract:
A patterning method of a quantum dot layer, a quantum dot layer pattern, a quantum dot device, a manufacturing method of the quantum dot device, and a display apparatus are provided. The patterning method of the quantum dot layer includes: forming a quantum dot layer, in which the quantum dot layer includes quantum dots and a photoinitiator; irradiating a preset portion of the quantum dot layer by light having a preset wavelength to quench the quantum dots in the preset portion and form a patterned quantum dot layer.
Abstract:
A device for generating electricity by friction and a manufacturing method thereof. The device comprises a first substrate and a second substrate arranged oppositely, and a plurality of elastic columns arranged between the first substrate and the second substrate to support them. A surface of the first substrate facing the second substrate is provided with a first conductive electrode and an insulating polymeric membrane layer which are stacked. A surface of the second substrate facing the first substrate is provided with a second conductive electrode. At least one surface of the two opposite surfaces of the second conductive electrode and the insulating polymeric membrane layer is formed into a surface with a concave-convex structure. The friction area between the second conductive electrode and the insulating polymeric membrane layer can be increased upon relative movement between the first substrate and the second substrate.