公开(公告)号：US11973094B2

公开(公告)日：2024-04-30

申请号：US17290495

申请日：2020-09-23

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Tianmin Zhou ,  Rui Huang ,  Wei Yang ,  Lizhong Wang ,  Zhaohui Qiang ,  Tao Yang ,  Li Qiang

IPC: H01L27/146 ,  G06V40/13 ,  H10K59/12 ,  H10K59/65 ,  H10K71/00

CPC classification number: H01L27/14616 ,  G06V40/1318 ,  H01L27/14603 ,  H01L27/14692 ,  H10K59/65 ,  H10K71/00 ,  H10K59/12 ,  H10K59/1201

Abstract: The present disclosure provides an array substrate, an electronic device and a manufacturing method of the array substrate. The array substrate includes a base substrate, and a first transistor and a second transistor on the base substrate, a first electrode of the first transistor being connected to a second electrode of the second transistor; the array substrate further includes a photodiode including a first electrode, a second electrode, and a photosensitive layer between the first electrode and the second electrode, and the first electrode is electrically connected to a gate of the first transistor. In the arrangement, the first transistor and the second transistor are connected in series to form one control unit, and the uniformity and stability of the control unit are greatly improved.

公开(公告)号：US11475833B2

公开(公告)日：2022-10-18

申请号：US16767351

申请日：2019-12-18

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Qingzhao Liu ,  Guoqiang Wang ,  Rui Huang ,  Lizhong Wang ,  Shuilang Dong ,  Xinhong Lu

IPC: G09G3/3233 ,  G09G3/3266 ,  H01L27/12 ,  H01L29/78 ,  H01L31/12

Abstract: The present application discloses a semiconductor apparatus, a pixel circuit and a control method thereof. The semiconductor apparatus comprises: an active layer; a first insulating layer; a first gate and a second gate overlapping with a portion of the active layer with the first insulating layer interposed therebetween, respectively; a first electrode, a second electrode and a third electrode, the first electrode and the second electrode are electrically connected with a first portion and a second portion of the active layer, respectively, the third electrode is used to be electrically connected with a photosensitive device, wherein the third electrode is electrically connected with the first gate or the second gate; or the third electrode is electrically connected with a third portion of the active layer.

公开(公告)号：US11232750B2

公开(公告)日：2022-01-25

申请号：US16633377

申请日：2019-01-29

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Lizhong Wang ,  Rui Huang ,  Yupeng Gao ,  Jiangnan Lu ,  Shuilang Dong

IPC: G09G3/3258 ,  G09G3/3291

Abstract: A display substrate, a display panel, and a manufacturing method and a driving method of a display substrate are provided. The display substrate includes a base substrate, a pixel circuit, and a photosensitive unit. The pixel circuit and the photosensitive unit are on the base substrate, the pixel circuit includes a first transistor, and an orthographic projection of the photosensitive unit on the base substrate at least partially overlaps with an orthographic projection of the first transistor on the base substrate.

公开(公告)号：US20230317740A1

公开(公告)日：2023-10-05

申请号：US18021090

申请日：2022-03-04

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Lizhong Wang ,  Ce Ning ,  Yunping Di ,  Binbin Tong ,  Rui Huang ,  Tianmin Zhou ,  Wei Yang ,  Liping Lei

IPC: H01L27/12 ,  G02F1/1362 ,  G02F1/1368

CPC classification number: H01L27/1251 ,  H01L27/1225 ,  H01L27/124 ,  G02F1/136209 ,  G02F1/136286 ,  G02F1/1368 ,  H01L27/127

Abstract: The present application provides an array substrate, a manufacturing method for the same, and a display panel. The array substrate includes a display area and a non-display area connected to the display area, and the display area includes a plurality of sub-pixels arranged in an array. The non-display area includes at least one polysilicon transistor, each of the sub-pixels includes an oxide transistor and a pixel electrode. A gate of the oxide transistor as well as a first electrode and a second electrode of the polysilicon transistor are arranged in a same layer; an active layer of the oxide transistor and the pixel electrode are arranged in a same layer, and are in contact with each other. The active layer of the oxide transistor includes an oxide semiconductor material, and the pixel electrode includes an oxide conductor material.

公开(公告)号：US11769850B2

公开(公告)日：2023-09-26

申请号：US17500963

申请日：2021-10-14

Applicant: BOE Technology Group Co., Ltd.

Inventor： Rui Huang ,  Haibin Zhu

IPC: H01L31/105 ,  H01L31/02 ,  H01L31/0224 ,  H01L31/20

CPC classification number: H01L31/1055 ,  H01L31/02005 ,  H01L31/022408 ,  H01L31/202

Abstract: An optoelectronic integrated substrate, a preparation method thereof and an optoelectronic integrated circuit. The electronic integrated substrate includes a base substrate and an electronic device and a photo-diode disposed on the base substrate, wherein the photo-diode includes an ohmic contact layer and an intrinsic amorphous silicon layer, and the ohmic contact layer and the intrinsic amorphous silicon layer are sequentially arranged along a direction parallel to the plane of the base substrate and are connected.

公开(公告)号：US11495043B2

公开(公告)日：2022-11-08

申请号：US16412644

申请日：2019-05-15

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Tianmin Zhou ,  Lizhong Wang ,  Rui Huang

IPC: G06V40/13 ,  H01L27/32 ,  H01L51/56 ,  H01L27/146

Abstract: The present disclosure provides an optical fingerprint identification unit, a display panel, a method for manufacturing an optical fingerprint identification unit and a method for identifying a fingerprint. The optical fingerprint identification unit includes a substrate, and a light source, a photoluminescent layer and a light sensor above the substrate. The light source is configured to emit visible light. The photoluminescent layer is configured to receive the visible light reflected by a fingerprint and convert the received visible light into non-visible light. The light sensor is configured to detect the non-visible light.

公开(公告)号：US11296249B2

公开(公告)日：2022-04-05

申请号：US16812764

申请日：2020-03-09

Applicant: BOE Technology Group Co., Ltd.

Inventor： Tianmin Zhou ,  Rui Huang ,  Lizhong Wang ,  Jipeng Song ,  Tao Yang ,  Zhaohui Qiang

IPC: H01L31/101 ,  H01L31/11 ,  H01L31/0224 ,  H01L31/0236 ,  H01L31/0392

Abstract: A photosensitive device, a manufacturing method thereof, a detection substrate and an array substrate are provided. The photosensitive device is formed on a substrate, and it includes a photosensitive element and a thin film transistor. The photosensitive element includes a first electrode layer on the substrate; a second electrode layer on a side of the first electrode layer distal to the substrate; and a photoelectric conversion layer between the first electrode layer and the second electrode layer. The thin film transistor is electrically connected to the photosensitive element, and it includes a first gate electrode on the substrate; an active layer on a side of the first gate electrode distal to the substrate; and a second gate electrode on a side of the active layer distal to the substrate. The first electrode layer and the second gate electrode are located in the same layer.

公开(公告)号：US20210233467A1

公开(公告)日：2021-07-29

申请号：US16767351

申请日：2019-12-18

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Qingzhao Liu ,  Guoqiang Wang ,  Rui Huang ,  Lizhong Wang ,  Shuilang Dong ,  Xinhong Lu

IPC: G09G3/3233 ,  H01L31/12 ,  H01L29/78 ,  H01L27/12 ,  G09G3/3266

Abstract: The present application discloses a semiconductor apparatus, a pixel circuit and a control method thereof. The semiconductor apparatus comprises: an active layer; a first insulating layer; a first gate and a second gate overlapping with a portion of the active layer with the first insulating layer interposed therebetween, respectively; a first electrode, a second electrode and a third electrode, the first electrode and the second electrode are electrically connected with a first portion and a second portion of the active layer, respectively, the third electrode is used to be electrically connected with a photosensitive device, wherein the third electrode is electrically connected with the first gate or the second gate; or the third electrode is electrically connected with a third portion of the active layer.

公开(公告)号：US20200258935A1

公开(公告)日：2020-08-13

申请号：US15768229

申请日：2017-09-28

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Rui Huang ,  Jianming Sun

IPC: H01L27/146 ,  G01T1/20

Abstract: The present application discloses a photodiode structure including multiple light trapping elements. Each light trapping element includes an N-type silicon layer with a recessed structure therein, an intrinsic silicon layer disposed overlying the N-type silicon layer including a side region and a bottom region inside the recessed structure, and a P-type silicon layer disposed as an inner layer overlying the intrinsic silicon layer inside the recessed structure. A radial PIN junction is formed around a nominal axis of the recessed structure.

公开(公告)号：US20240431211A1

公开(公告)日：2024-12-26

申请号：US18274052

申请日：2022-07-15

Applicant: BOE Technology Group Co., Ltd.

Inventor： Rui Huang ,  Zhao Cui ,  Jinchao Zhang ,  Wenqu Liu ,  Yue Tong ,  Liwei Liu ,  Yonggang Cao

IPC: H10N30/87 ,  H10N30/30 ,  H10N39/00

Abstract: A thin film transistor and an ultrasonic imaging base board. The thin film transistor includes: a substrate (100), and a first gate (101), a first gate insulation layer (102), a first active layer (103), a second gate insulation layer (104) and a second gate (105) stacked on a side of the substrate (100), and the first gate (101) is connected to the second gate (105).