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公开(公告)号:US20240186454A1
公开(公告)日:2024-06-06
申请号:US17789351
申请日:2021-05-31
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor: Weixing LIU , Kuanjun PENG , Xiaolong LI , Wanpeng TENG , Bin QIN , Wanzhi CHEN , Fangzhen ZHANG , Chunfang ZHANG , Zhiqiang XU
IPC: H01L33/38 , G09G3/32 , H01L25/075 , H01L33/62
CPC classification number: H01L33/382 , G09G3/32 , H01L25/0753 , H01L33/62 , G09G2300/0819 , G09G2300/0852 , G09G2320/0626 , G09G2330/021
Abstract: A light-emitting device includes a first semiconductor layer, a light-emitting functional layer and a second semiconductor layer that are stacked. The first semiconductor layer includes a first semiconductor pattern and a second semiconductor pattern. The light-emitting functional layer includes a first light-emitting pattern and a second light-emitting pattern spaced apart. The second semiconductor layer includes a third semiconductor pattern and a fourth semiconductor pattern spaced apart. Orthographic projections of the first semiconductor pattern, the first light-emitting pattern and the third semiconductor pattern on a reference plane at least partially overlap to form a first light-emitting portion. Orthographic projections of the second semiconductor pattern, the second light-emitting pattern and the fourth semiconductor pattern on the reference plane at least partially overlap to form a second light-emitting portion. The reference plane is parallel to a plane where the first semiconductor layer is located.
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公开(公告)号:US20230207578A1
公开(公告)日:2023-06-29
申请号:US18116689
申请日:2023-03-02
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor: Dong LI , Xiaolong LI , Liangjian LI , Hongwei TIAN
IPC: H01L27/12 , H10K59/124 , H10K59/131
CPC classification number: H01L27/1248 , H01L27/124 , H01L27/1259 , H10K59/124 , H10K59/131 , H01L27/1255
Abstract: An array substrate and a manufacturing method thereof are provided. The array substrate includes a display pixel area for providing pixel units arranged in an array. The array substrate further includes: a base substrate, a first insulating layer, a second insulating layer, and a first conductive pattern layer. The first insulating layer is provided on the base substrate, grooves are provided in the first insulating layer, and the grooves are provided in the display pixel area. The second insulating layer is provided on the first insulating layer, and the second insulating layer is also filled into the grooves. The first conductive pattern layer is provided on the second insulating layer. By providing the grooves, the array substrate may have better impact resistance and bending resistance.
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公开(公告)号:US20210335183A1
公开(公告)日:2021-10-28
申请号:US16323931
申请日:2018-05-31
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor: Bin DAI , Xue DONG , Xiaomang ZHANG , Jing LV , Dong CHEN , Yuxin BI , Yanhui XI , Xiaolong LI , Haijun NIU
IPC: G09G3/20
Abstract: The display control method according to some embodiments of the present disclosure includes: acquiring an M-primary-color input signal from each pixel in an original image, the original image including a plurality of pixels corresponding to the plurality of pixel units respectively, each pixel being configured to display a colored image in M primary colors, M being an integer greater than 1 and smaller than N; and calculating an N-primary-color input signal for a corresponding pixel unit of the N-primary-color display panel in accordance with color coordinates of each primary color for the N-primary-color display panel and the M-primary-color input signal.
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公开(公告)号:US20210142764A1
公开(公告)日:2021-05-13
申请号:US16623609
申请日:2019-05-24
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor: Xueling GAO , Kuanjun PENG , Chengchung YANG , Zhiqiang XU , Wei QIN , Tieshi WANG , Xiaolong LI , Shengnan LI , Wanpeng TENG
IPC: G09G5/10 , G09G3/3275
Abstract: The present disclosure relates to a light-emission control signal generating device and a display device. The light-emission control signal generating device includes: a state detection circuit configured to detect whether a current frame is a static frame or a dynamic frame and output an indication signal indicating the static frame or the dynamic frame; and a plurality of light emission control signal generation circuits; wherein the plurality of light emission control signal generation circuits are divided into a plurality of blocks, and individual blocks are input with different light emission enable signals based on the indication signal to generate light emission control signals.
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公开(公告)号:US20210027711A1
公开(公告)日:2021-01-28
申请号:US16829407
申请日:2020-03-25
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor: Wei QIN , Zhiqiang XU , Xiaolong LI , Tieshi WANG , Weixing LIU , Kai GUO , Jintao PENG , Yanan NIU , Kuanjun PENG
IPC: G09G3/3258 , G09G3/3291 , G06F3/041 , G06F3/044 , G06K9/00
Abstract: A pixel circuit includes a sensing circuit, a gray-scale control circuit and a light-emitting switch circuit; the sensing circuit is configured to charge and discharge a sensing capacitor when a sensing capacitor is formed by a touch object and an anode layer of OLED; the gray-scale control circuit is configured to control the light-emitting intensity of the OLED; the light-emitting switch circuit is configured to control the OLED to emit light.
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公开(公告)号:US20200033618A1
公开(公告)日:2020-01-30
申请号:US16442975
申请日:2019-06-17
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor: Xiaolong LI , Wei QIN , Kuanjun PENG , Xueling GAO , Fangzhen ZHANG , Jintao PENG , Jinqian WANG , Miaomiao YANG , Shuang SUN , Chunfang ZHANG , Shengnan LI
Abstract: A semi-transparent semi-retroreflective film and an air display device are provided. The air display device includes: a first polarizer and a second polarizer assembled with each other to form a cell; a semi-transparent semi-reflective structure and a semi-transparent semi-retroreflective film disposed between the first polarizer and the second polarizer; a first ¼ wave plate disposed at a side of the air display device adjacent to the first polarizer; and a second ¼ wave plate disposed between the semi-transparent semi-reflective structure and the semi-transparent semi-retroreflective film. The air display device is configured such that polarized light incident from the first polarizer, after being processed by an internal optical path of the air display device, exits from the second polarizer to form an air image at a side of the air display device away from the first polarizer.
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公开(公告)号:US20190378931A1
公开(公告)日:2019-12-12
申请号:US16427743
申请日:2019-05-31
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor: Xueyan TIAN , Zunqing SONG , Xiaolong LI
IPC: H01L29/786 , H01L29/66 , H01L21/324 , H01L27/12
Abstract: A thin film transistor, a method for manufacturing the same and a display device are provided in the present disclosure. The thin film transistor includes an active layer, a first electrode and a second electrode, and a gate electrode. The active layer includes an active layer body and an electrode hole in a center of the active layer body. The gate electrode is insulated and spaced apart from the active layer body and is disposed to surround the electrode hole. The first electrode and the second electrode are insulated from each other, both coupled to the active layer body, and insulated and spaced apart from the gate electrode. At least a portion of an orthographic projection of the first electrode on the active layer is within the electrode hole. An orthographic projection of the second electrode on the active layer surrounds the active layer body.
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公开(公告)号:US20180321430A1
公开(公告)日:2018-11-08
申请号:US15755514
申请日:2017-08-16
Inventor: Xiaolong LI , Yupeng WANG , Chao TIAN , Hongshu ZHANG , Hong HE
CPC classification number: G02B5/3025 , G02B5/201 , G02B5/28 , G02F1/1335 , G09G3/2003
Abstract: The present disclosure discloses a display substrate, a manufacturing method thereof, and a display panel. The display substrate comprises: pixel regions corresponding to different wavelengths; and an optical film layer in a corresponding pixel region. For each pixel region, the optical film layer is configured such that light exiting from the pixel region has at least two different phases, and the at least two different phases cause light having a wavelength corresponding to the pixel region to interfere constructively, and light having other wavelengths to interfere destructively.
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19.
公开(公告)号:US20180108757A1
公开(公告)日:2018-04-19
申请号:US15116980
申请日:2015-10-16
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor: Xiaolong LI , Zheng LIU , Xiaoyong LU , Dong LI , Chunping LONG
Abstract: A manufacturing method for a polysilicon thin film is provided. The manufacturing method for a polysilicon thin film includes forming a polysilicon layer, treating a surface of the polysilicon layer so that the surface of the polysilicon layer is electronegative, and supplying polar gas into a process chamber so that polar molecules of the polar gas are adsorbed on the surface of the polysilicon layer which is electronegative so as to form the polysilicon thin film, a surface of which has a hole density higher than an electron density.
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公开(公告)号:US20170162703A1
公开(公告)日:2017-06-08
申请号:US15322490
申请日:2016-03-01
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor: Xiaolong LI , Zheng LIU , Xiaoyong LU , Chunping LONG , Huijuan ZHANG
CPC classification number: H01L29/78609 , H01L21/02527 , H01L21/02598 , H01L21/02609 , H01L21/0262 , H01L21/02664 , H01L21/043 , H01L29/045 , H01L29/1602 , H01L29/66045 , H01L29/66742 , H01L29/78621 , H01L29/78684 , H01L29/78696
Abstract: The embodiments of present disclosure provide a thin film transistor, a method for manufacturing the same, and an array substrate. The thin film transistor comprises an active layer provided on a substrate, the active layer including a middle channel region, a first high resistance region and a second high resistance region provided respectively on external sides of the middle channel region, a source region provided on an external side of the first high resistance region and a drain region provided on an external side of the second high resistance region, wherein a base material of the active layer is diamond single crystal. According to the thin film transistor, the method for manufacturing the same, and the array substrate provided in the embodiments of present disclosure, by providing high resistance regions on external sides of the middle channel region of the active layer, the carrier mobility is reduced and the leakage current of the thin film transistor made of single crystalline diamond is effectively suppressed.
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