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1.发明申请公开(公告)号：US20250057017A1
公开(公告)日：2025-02-13
申请号：US18923942
申请日：2024-10-23
Inventor： Dong LI
IPC: H10K59/80 , H10K50/115 , H10K50/15 , H10K50/16 , H10K59/35 , H10K71/10 , H10K101/40 , H10K102/00
Abstract: Embodiments of the present disclosure disclose a green quantum dot light-emitting device, a method for manufacturing the same, and a display apparatus, including: a first cathode and a first anode opposite to each other, a green quantum dot light-emitting layer between the first cathode and the first anode, a first electron transport layer between the first cathode and the green quantum dot light-emitting layer, and a first hole transport layer between the green quantum dot light-emitting layer and the first anode; wherein a material of the first electron transport layer includes an oxide containing Zn, a thickness of the first electron transport layer is in the range of 10 nm to 40 nm, and a thickness of the first hole transport layer is in the range of 26 nm to 39 nm.
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2.发明公开公开(公告)号：US20240306412A1
公开(公告)日：2024-09-12
申请号：US18270849
申请日：2021-02-23
Inventor： Dong LI
IPC: H10K50/115 , H10K50/16 , H10K71/40
CPC classification number: H10K50/115 , H10K50/16 , H10K71/421
Abstract: Disclosed are a quantum dot light-emitting device and a manufacturing method therefor, and a display apparatus, including: coating a substrate with a quantum dot solution, wherein each quantum dot includes a quantum dot body and a first crosslinkable ligand connected to the surface of the quantum dot body, and when the quantum dots are in a solution state, the first crosslinkable ligand is in a decrosslinking state; carrying out cross-linking reaction on the first crosslinkable ligand of the quantum dots at a first temperature; using laser to irradiate a quantum dot region to be removed after the crosslinking reaction, the quantum dots in said region being decrosslinked at a second temperature generated by laser irradiation, and a difference between the second temperature and the first temperature being greater than a preset value; and removing the quantum dots in said region to form a patterned quantum dot layer.
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公开(公告)号：US20240298459A1
公开(公告)日：2024-09-05
申请号：US18041083
申请日：2022-02-18
IPC: H10K50/16 , H10K50/115 , H10K50/15 , H10K59/122 , H10K59/35 , H10K71/00 , H10K102/00
CPC classification number: H10K50/166 , H10K50/115 , H10K50/156 , H10K59/122 , H10K59/353 , H10K71/00 , H10K2102/351
Abstract: The embodiments of the present disclosure provide a display substrate, an electroluminescent device and a manufacturing method thereof, the display substrate includes: a base substrate; a pixel definition layer, in which the pixel definition layer includes a plurality of openings, the openings correspond to a plurality of sub-pixel regions, the sub-pixel regions include a first sub-pixel region and a second sub-pixel region; a first color quantum dot layer, in the first sub-pixel region; a second color quantum dot layer, in the second sub-pixel region; a first auxiliary layer, at least including a first portion and a second portion spaced apart from each other, the first portion is on a side of the first color quantum dot layer away from the base substrate, the second portion is on a side of the second color quantum dot layer close to the base substrate.
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4.发明公开公开(公告)号：US20240274756A1
公开(公告)日：2024-08-15
申请号：US18042944
申请日：2022-02-23
Inventor： Dong LI
IPC: H01L33/50 , H01L25/075 , H01L33/00 , H01L33/04
CPC classification number: H01L33/502 , H01L25/0753 , H01L33/005 , H01L33/04
Abstract: A light-emitting device includes a first electrode, an electron transporting layer disposed on a side of the first electrode, a quantum dot light-emitting layer disposed on a side of the electron transporting layer away from the first electrode, a second electrode disposed on a side of the quantum dot light-emitting layer away from the first electrode, and a plurality of adjustment patterns disposed between the first electrode and the quantum dot light-emitting layer. Orthographic projections of the plurality of adjustment patterns on a reference plane are distributed at intervals. The plurality of adjustment patterns are each in contact with the electron transporting layer. At least a portion of an orthographic projection of the electron transporting layer on the reference plane is located in a gap between the orthographic projections of the plurality of adjustment patterns on the reference plane.
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公开(公告)号：US20210343954A1
公开(公告)日：2021-11-04
申请号：US17281420
申请日：2020-06-04
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Hongwei TIAN , Yanan NIU , Dong LI , Ming LIU , Zheng LIU
Abstract: A flexible substrate has at least one bendable region. The flexible substrate includes a flexible base, a first electrode layer disposed on the base, a first insulating layer disposed on a side of the first electrode layer away from the base, and a second electrode layer disposed on a side of the first insulating layer away from the base. The first electrode layer includes at least one first detection electrode, and the second electrode layer includes at least one second detection electrode. An orthogonal projection of a first detection electrode on the base overlaps at least partially with an orthogonal projection of a second detection electrode on the base. A region where orthogonal projections of the first detection electrode and the second detection electrode on the base are located overlaps with a bendable region.
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Patent Agency Ranking
公开(公告)号：US20210288281A1
公开(公告)日：2021-09-16
申请号：US17255569
申请日：2020-02-26
Inventor： Dong LI , Wenhai MEI , Boris KRISTAL
Abstract: A light-emitting structure, a display panel and a display device. The light-emitting structure comprises a first light-emitting element. The first light-emitting element comprises a first light-emitting layer, a first electron transport layer and a first cathode. The first cathode is in contact with the first electron transport layer. The energy level of conduction band minimum (CBM) of the first electron transport layer is greater than the Fermi level of the first cathode. A difference between the energy level of CBM of the first electron transport layer and the Fermi level of the first cathode is in a range from 0.3 to 0.6 eV.
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7.发明申请公开(公告)号：US20210193700A1
公开(公告)日：2021-06-24
申请号：US16077777
申请日：2017-12-13
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Xiaolong LI , Dong LI , Huijuan ZHANG , Zheng LIU
IPC: H01L27/12
Abstract: A thin film transistor, a method for fabricating the same, a display substrate, and a display device are disclosed. The thin film transistor includes a gate, a source, a drain, and an active layer. Forming the active layer includes: forming a pattern comprising a thermal insulation layer; forming a pattern comprising an amorphous silicon layer on the thermal insulation layer, wherein the pattern comprising the amorphous silicon layer includes a first portion on the thermal insulation layer and a second portion extending beyond the thermal insulation layer; and treating the pattern comprising the amorphous silicon layer with a laser annealing process, so that the amorphous silicon layer grows grain in a direction from the second portion to the first portion to form the active layer from polycrystalline silicon.
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公开(公告)号：US20200273890A1
公开(公告)日：2020-08-27
申请号：US16676820
申请日：2019-11-07
Inventor： Jing WANG , Dong LI , Xiaodong XIE , Min HE , Weiwei CHU , Wenjie XU , Yuan LI , Yaying LI
IPC: H01L27/12
Abstract: The present disclosure provides a display substrate, a method for manufacturing the same and a display device. The display substrate includes a base substrate, first wires on a side of the base substrate, a first barrier layer on the side of the base substrate; and a second wire on a side of the first barrier layer distal to the base substrate, where the first wires and the second wire being adjacent to and spaced apart from each other.
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9.发明申请公开(公告)号：US20200267069A1
公开(公告)日：2020-08-20
申请号：US16649963
申请日：2019-07-23
Inventor： Dong LI
IPC: H04L12/26 , H04L12/707 , H04L12/703 , H04L12/24
Abstract: A link switching method and a link switching device, a network communication system, and a computer-readable storage medium are described. The link switching method includes: monitoring whether a connection state of a first link between a first network device and a second network device is abnormal; and in response to the monitored connection state of the first link being abnormal, sending a pre-configured data packet to the first network device for being invoked by the first network device to perform a link switching from the first link to a second link.
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公开(公告)号：US20200212227A1
公开(公告)日：2020-07-02
申请号：US15751220
申请日：2016-08-09
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Dong LI , Yucheng CHAN , Shuai ZHANG
IPC: H01L29/786 , H01L27/12 , H01L29/66 , H01L21/265
Abstract: A thin film transistor, a manufacturing method thereof, an array substrate and a display device are disclosed. The thin film transistor includes an active layer, as well as a source and a drain above the active layer, wherein the active layer includes a carrier trapping portion configured to trap photo-generated majority carriers.
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