公开(公告)号：US12233410B2

公开(公告)日：2025-02-25

申请号：US17292277

申请日：2020-01-23

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Xiaochen Ma ,  Ce Ning ,  Chao Li ,  Jiayu He ,  Xueyuan Zhou ,  Xiao Zhang ,  Xin Gu ,  Zhengliang Li ,  Guangcai Yuan

IPC: B01L3/00

Abstract: A microfluidic channel backplane includes a base, and a plurality of microfluidic channels, a sample-adding channel and an enrichment channel that are disposed above the base. Each microfluidic channel of the plurality of microfluidic channels includes a first end and a second end. The sample-adding channel is communicated with first ends of the plurality of microfluidic channels. The enrichment channel includes a first enrichment sub-channel and a second enrichment sub-channel. The first enrichment sub-channel is communicated with second ends of the plurality of microfluidic channels, and one end of the second enrichment sub-channel is communicated with the first enrichment sub-channel.

公开(公告)号：US11927853B2

公开(公告)日：2024-03-12

申请号：US17259911

申请日：2020-04-03

Applicant: Hefei BOE Display Technology Co., Ltd. ,  BOE Technology Group Co., Ltd.

Inventor： Yunfei Liu ,  Wei Zhang ,  Jilei Gao ,  Bin Li ,  Benzhi Xu ,  Chao Li ,  Lu Niu ,  Qi Liu

IPC: G02F1/1343 ,  G02F1/1362 ,  G02F1/1368 ,  H01L27/12

CPC classification number: G02F1/13439 ,  G02F1/134345 ,  G02F1/136286 ,  G02F1/1368 ,  H01L27/124

Abstract: The embodiments of the present disclosure relate to the field of display technology, and in particular to a display substrate, a display panel, and a display device. The display substrate includes a first electrode, a first wire, and a second wire; the first electrode is provided with a plurality of slits; the first wire is provided on a side of the first electrode, and a first gap is provided between the first wire and the first electrode, and the first wire being electrically connected to the first electrode; a second wire provided on a side of the first electrode away from the first wire, and a second gap being provided between the second wire and the first electrode; wherein each of the slits is provided with a first end and a second end opposed to each other, and the first end is close to the first wire, and the second end is close to the second wire, and a light-transmitting part of the first end is larger than a light-transmitting part of the second end. The electric field disorder of the first end is better than the electric field disorder of the second, so that the weak zone at the first end is larger than the weak zone at the second end. By increasing the light-transmitting part of the first end, the weak zone at the first end becomes smaller, thereby making the weak zone of the first end is basically the same as the weak zone of the second end.

公开(公告)号：US11905163B2

公开(公告)日：2024-02-20

申请号：US16753362

申请日：2019-04-03

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Xiaochen Ma ,  Guangcai Yuan ,  Ce Ning ,  Xin Gu ,  Xiao Zhang ,  Chao Li

IPC: B81B1/00 ,  B81C1/00 ,  B01L3/00

CPC classification number: B81B1/002 ,  B01L3/502715 ,  B81C1/00071 ,  B01L2300/0645 ,  B81B2201/05 ,  B81B2203/0338 ,  B81C2201/0111 ,  B81C2201/036

Abstract: A micro-nano channel structure, a method for manufacturing the micro-nano channel structure, a sensor, a method for manufacturing the sensor, and a microfluidic device are provided by the embodiments of the present disclosure. The micro-nano channel structure includes: a base substrate; a base layer, on the base substrate and including a plurality of protrusions; and a channel wall layer, on a side of the plurality of the protrusions away from the base substrate, and the channel wall layer has a micro-nano channel; a recessed portion is provided between adjacent protrusions of the plurality of the protrusions, and an orthographic projection of the micro-nano channel on the base substrate is located within an orthographic projection of the recessed portion on the base substrate.

公开(公告)号：US11469336B2

公开(公告)日：2022-10-11

申请号：US16958120

申请日：2020-01-17

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Jianhua Du ,  Chao Li ,  Zhaohui Qiang ,  Yupeng Gao ,  Feng Guan ,  Rui Huang ,  Zhi Wang ,  Yang Lv ,  Chao Luo

IPC: H01L31/0224 ,  H01L31/0376 ,  H01L31/18 ,  H01L31/20

Abstract: The present disclosure relates to a photodiode, a method for preparing the same, and an electronic device. The photodiode includes: a first electrode layer and a semiconductor structure that are stacked, a surface of the semiconductor structure away from the first electrode layer having a first concave-convex structure; and a second electrode layer arranged on a surface of the semiconductor structure away from the first electrode layer, a surface of the second electrode layer away from the first electrode layer having a second concave-convex structure.

公开(公告)号：US11189740B2

公开(公告)日：2021-11-30

申请号：US16819833

申请日：2020-03-16

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Jianhua Du ,  Chao Li

IPC: H01L31/0352 ,  H01L31/032 ,  H01L31/0216 ,  H01L31/0272 ,  H01L31/20

Abstract: The embodiment of the application discloses a photoelectric sensor and a manufacturing method thereof, wherein the photoelectric sensor comprises: a light absorbing layer for absorbing incident light to generate a photocurrent, the light absorption layer comprises a first absorption layer and a second absorption layer stacked in the direction of incident light, the first absorption layer being an intrinsic semiconductor layer of the photoelectric sensor, the second absorption layer being made of a material having a higher photoelectric conversion efficiency than the first absorption layer, and the second absorption layer has a stripe structure arranged at intervals.

公开(公告)号：US11561444B2

公开(公告)日：2023-01-24

申请号：US17515032

申请日：2021-10-29

Applicant: Hefei BOE Display Technology Co., Ltd. ,  BOE Technology Group Co., Ltd.

Inventor： Jilei Gao ,  Wei Zhang ,  Miao Yu ,  Benzhi Xu ,  Chao Li ,  Qi Liu ,  Xipeng Wang ,  Yonggang Zhang

IPC: G02F1/1362

Abstract: A display panel and a display device are disclosed. The display panel includes a plurality of sub-pixels arranged in an array; gate line light shielding parts extending in a row direction are arranged on horizontal non-display areas between every two adjacent rows of sub-pixels; vertical non-display areas are arranged between every two sub-pixels adjacent in a row direction; at least one of the vertical non-display areas is provided with a vertical light shielding part, and the vertical light shielding part is configured to prevent two sub-pixels on two sides, in the row direction, of the vertical light shielding part from light leakage at a junction; and a gap is formed between the vertical light shielding part and each of two gate line light shielding parts adjacent to the vertical light shielding part.

公开(公告)号：US11121257B2

公开(公告)日：2021-09-14

申请号：US16641078

申请日：2019-02-22

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Zhaohui Qiang ,  Feng Guan ,  Zhi Wang ,  Yupeng Gao ,  Yang Lyu ,  Chao Li ,  Jianhua Du ,  Lei Chen

IPC: H01L29/786 ,  H01L29/417 ,  H01L29/45 ,  H01L29/66 ,  H01L29/49

Abstract: The present disclosure provides a thin film transistor, a pixel structure, a display device, and a manufacturing method. The thin film transistor includes: a gate on the substrate; a gate insulating layer covering the gate and the substrate; a first support portion and a second support portion, which are provided on the gate insulating layer covering the substrate and located on both sides of the gate, wherein the first support portion is not connected to the second support portion; a semiconductor layer on the first support portion, the second support portion, and the gate insulating layer covering the gate; and a source and a drain respectively connected to the semiconductor layer. The first support portion and the second support portion are respectively configured to support the semiconductor layer.

公开(公告)号：US12189239B2

公开(公告)日：2025-01-07

申请号：US17768411

申请日：2021-03-09

Applicant: HEFEI BOE DISPLAY TECHNOLOGY CO., LTD. ,  BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Wenbo Dong ,  Chaoyue Wang ,  Wei Zhang ,  Chao Li

IPC: G02F1/13357 ,  F21V8/00

Abstract: An edge-lit backlight module (7) includes a light guide plate (71), at least one polarizer (72) and at least one light source (73). The light guide plate (71) has side faces (71a). A polarizer (72) is disposed opposite to a side face (71a) of the light guide plate (71). A light source (73) is disposed on a side of a polarizer (72) away from the light guide plate (71). The at least one polarizer (72) is configured to convert light emitted from a light source (73) disposed on a side of the polarizer away from the light guide plate to the light guide plate (71) into linearly polarized light.

公开(公告)号：US11309427B2

公开(公告)日：2022-04-19

申请号：US16642638

申请日：2019-03-04

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Zhi Wang ,  Guangcai Yuan ,  Feng Guan ,  Chen Xu ,  Xueyong Wang ,  Jianhua Du ,  Chao Li ,  Lei Chen

IPC: H01L29/78 ,  H01L29/786 ,  H01L29/66

Abstract: The present disclosure relates to a thin film transistor and a manufacturing method thereof. The thin film transistor includes a substrate, a first semiconductor layer, a gate dielectric layer, and a gate electrode sequentially stacked on the substrate, the first semiconductor layer has a first portion located in a channel region of the thin film transistor and a second portion in source/drain regions of the thin film transistor and located on both sides of the first portion, the second portion and first sub-portions of the first portion adjacent to the second portion include an amorphous semiconductor material, a second sub-portion of the first portion between the first sub-portions includes a polycrystalline semiconductor material, and a second semiconductor layer located in the source/drain regions and in contact with the second portion, wherein a conductivity of the second semiconductor layer is higher than a conductivity of the amorphous semiconductor material.

公开(公告)号：US11183610B2

公开(公告)日：2021-11-23

申请号：US16909526

申请日：2020-06-23

Applicant: BOE Technology Group Co., Ltd.

Inventor： Chao Li ,  Jianhua Du ,  Feng Guan ,  Yupeng Gao ,  Zhaohui Qiang ,  Zhi Wang ,  Yang Lyu ,  Chao Luo

IPC: H01L31/105 ,  H01L27/12 ,  H01L31/12 ,  H01L31/18

Abstract: The present disclosure discloses a photoelectric detector, a preparation method thereof, a display panel and a display device. The photoelectric detector includes a base, and a thin film transistor (TFT) and a photosensitive PIN device on the base, wherein the PIN device includes an I-type region that does not overlap with an orthographic projection of the TFT on the base; a first etching barrier layer covering a top surface of the I-type region; a first heavily doped region in contact with a side surface on a side, proximate to the TFT, of the I-type region; and a second heavily doped region in contact with a side surface on a side, away from the TFT, of the I-type region, the doping types of the first heavily doped region and the second heavily doped region being different from each other.