公开(公告)号：US20170139081A1

公开(公告)日：2017-05-18

申请号：US15325863

申请日：2016-02-22

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Dongfang Wang ,  Meili Wang ,  Li Zhang

IPC: G02B1/113 ,  G02F1/1335 ,  H01L51/52 ,  G02B1/12

CPC classification number: G02B1/113 ,  G02B1/118 ,  G02B1/12 ,  G02F1/133502 ,  G02F1/133526 ,  G02F2201/38 ,  H01L31/0543 ,  H01L51/5275 ,  H01L51/5281

Abstract: The present application discloses a method of fabricating an anti-reflective film, comprising forming a zinc oxynitride layer on a substrate; annealing the zinc oxynitride layer; and etching the surface of the zinc oxynitride layer with an etching solution to form a micro lenses layer comprising a plurality of micro lenses on surface.

公开(公告)号：US09379146B2

公开(公告)日：2016-06-28

申请号：US14429247

申请日：2014-07-18

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Li Zhang ,  Liangchen Yan ,  Fengjuan Liu

IPC: H01L21/768 ,  H01L21/283 ,  H01L27/12 ,  H01L29/417 ,  H01L29/423 ,  H01L29/66

CPC classification number: H01L27/1262 ,  H01L21/283 ,  H01L21/76802 ,  H01L21/76885 ,  H01L27/1288 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/66742

Abstract: A method for manufacturing an array substrate and a method for forming a through hole are provided. The method for manufacturing the array substrate comprise: coating photoresist in an insulating layer through-hole region on a substrate; depositing an insulating layer on the substrate provided with the photoresist in the insulating layer through-hole region; and stripping off the photoresist in the insulating layer through-hole region to form an insulating layer through hole. The manufacturing method simplifies the process of forming the insulating layer through hole.

Abstract translation: 提供一种阵列基板的制造方法及形成通孔的方法。 制造阵列基板的方法包括：在基板上的绝缘层通孔区域中涂覆光致抗蚀剂; 在设置有所述光致抗蚀剂的所述基板上的所述绝缘层通孔区域内淀积绝缘层; 并剥离绝缘层通孔区域中的光致抗蚀剂以形成绝缘层通孔。 该制造方法简化了形成绝缘层通孔的工艺。

公开(公告)号：US09882063B2

公开(公告)日：2018-01-30

申请号：US14914228

申请日：2015-08-10

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Li Zhang

IPC: H01L29/786 ,  H01L29/40 ,  H01L29/417 ,  H01L29/423

CPC classification number: H01L29/78696 ,  H01L29/401 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/45 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/786 ,  H01L29/7869

Abstract: The present disclosure relates to the field of manufacturing technologies for semiconductor devices and provides a thin film transistor and a manufacturing method thereof, an array substrate and a display device. The thin film transistor includes: an active layer located on a plane; a source electrode, which is located on the active layer and is in contact with the active layer; a first insulation layer located on the source electrode and including a first via hole; and a drain electrode located on the first insulation layer, where the drain electrode is in contact with the active layer via the first via hole.

公开(公告)号：US09368637B2

公开(公告)日：2016-06-14

申请号：US14348763

申请日：2013-07-15

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Li Zhang ,  Chunsheng Jiang ,  Dongfang Wang ,  Haijing Chen ,  Fengjuan Liu

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/66

CPC classification number: H01L29/7869 ,  H01L27/1225 ,  H01L27/1248 ,  H01L27/1262 ,  H01L29/41733 ,  H01L29/45 ,  H01L29/66969 ,  H01L29/78633 ,  H01L29/78693

Abstract: A thin film transistor (TFT) and manufacturing method thereof, an array substrate and a display device are provided. The thin film transistor comprises a substrate; an active layer formed on the substrate; a first conductive contact layer and a second conductive contact layer formed on the active layer; an etch-stop layer formed over the first contact layer and the second contact layer; and a source connected with the first contact layer, a drain connected with the second contact layer and a gate arranged between the source and the drain formed over the etch-stop layer. The TFT has a simple structure and better performance.

Abstract translation: 提供薄膜晶体管（TFT）及其制造方法，阵列基板和显示装置。 薄膜晶体管包括基板; 形成在所述基板上的有源层; 第一导电接触层和形成在有源层上的第二导电接触层; 形成在所述第一接触层和所述第二接触层上的蚀刻停止层; 以及与第一接触层连接的源极，与第二接触层连接的漏极和布置在蚀刻停止层上形成的源极和漏极之间的栅极。 TFT具有结构简单，性能更好的特点。

公开(公告)号：US10989842B2

公开(公告)日：2021-04-27

申请号：US15961100

申请日：2018-04-24

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Dongfang Wang ,  Meili Wang ,  Li Zhang

IPC: G02B1/113 ,  G02B1/118 ,  H01L31/054 ,  G02B1/12 ,  G02F1/1335 ,  H01L51/52

Abstract: The present application discloses a method of fabricating an anti-reflective film, comprising forming a zinc oxynitride layer on a substrate; annealing the zinc oxynitride layer; and etching the surface of the zinc oxynitride layer with an etching solution to form a micro lenses layer comprising a plurality of micro lenses on surface.

公开(公告)号：US09983332B2

公开(公告)日：2018-05-29

申请号：US15325863

申请日：2016-02-22

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Dongfang Wang ,  Meili Wang ,  Li Zhang

IPC: H01L21/302 ,  H01L21/461 ,  B29D11/00 ,  C25F3/00 ,  G02B1/113 ,  G02B1/12 ,  G02F1/1335 ,  H01L51/52 ,  H01L31/054

CPC classification number: G02B1/113 ,  G02B1/118 ,  G02B1/12 ,  G02F1/133502 ,  G02F1/133526 ,  G02F2201/38 ,  H01L31/0543 ,  H01L51/5275 ,  H01L51/5281

Abstract: The present application discloses a method of fabricating an anti-reflective film, comprising forming a zinc oxynitride layer on a substrate; annealing the zinc oxynitride layer; and etching the surface of the zinc oxynitride layer with an etching solution to form a micro lenses layer comprising a plurality of micro lenses on surface.

公开(公告)号：US20150214373A1

公开(公告)日：2015-07-30

申请号：US14348763

申请日：2013-07-15

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Li Zhang ,  Chunsheng Jiang ,  Dongfang Wang ,  Haijing Chen ,  Fengjuan Liu

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/66

CPC classification number: H01L29/7869 ,  H01L27/1225 ,  H01L27/1248 ,  H01L27/1262 ,  H01L29/41733 ,  H01L29/45 ,  H01L29/66969 ,  H01L29/78633 ,  H01L29/78693

Abstract: A thin film transistor (TFT) and manufacturing method thereof, an array substrate and a display device are provided. The thin film transistor comprises a substrate; an active layer formed on the substrate; a first conductive contact layer and a second conductive contact layer formed on the active layer; an etch-stop layer formed over the first contact layer and the second contact layer; and a source connected with the first contact layer, a drain connected with the second contact layer and a gate arranged between the source and the drain formed over the etch-stop layer. The TFT has a simple structure and better performance.

Abstract translation: 提供薄膜晶体管（TFT）及其制造方法，阵列基板和显示装置。 薄膜晶体管包括基板; 形成在所述基板上的有源层; 第一导电接触层和形成在有源层上的第二导电接触层; 形成在所述第一接触层和所述第二接触层上的蚀刻停止层; 以及与第一接触层连接的源极，与第二接触层连接的漏极和布置在蚀刻停止层上形成的源极和漏极之间的栅极。 TFT具有结构简单，性能更好的特点。

公开(公告)号：US20140175385A1

公开(公告)日：2014-06-26

申请号：US13878905

申请日：2012-10-10

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Yanzhao Li ,  Gang Wang ,  Woobong Lee ,  Li Zhang

IPC: H01L27/32 ,  H01L51/52 ,  H01L51/56

CPC classification number: H01L27/3276 ,  H01L27/1225 ,  H01L27/3248 ,  H01L51/5206 ,  H01L51/5221 ,  H01L51/5234 ,  H01L51/5271 ,  H01L51/56 ,  H01L2227/323 ,  H01L2251/305 ,  H01L2251/5323 ,  H01L2251/5353

Abstract: Embodiments of the invention disclose an OLED device, an AMOLED display device and a method for manufacturing the AMOLED display device. the AMOLED display device comprises a TFT active layer, a pixel electrode layer and an OLED device; the OLED device comprises a cathode layer and a functional layer, and the pixel electrode layer serves as the anode layer of the OLED device; alternatively, the OLED device comprises an anode layer and a functional layer, and the pixel electrode layer serves as the cathode layer of the OLED device. Moreover, the TFT active layer and the pixel electrode layer are formed from a same IGZO film by a patterning process.

Abstract translation: 本发明的实施例公开了OLED装置，AMOLED显示装置和用于制造AMOLED显示装置的方法。 AMOLED显示装置包括TFT有源层，像素电极层和OLED器件; OLED器件包括阴极层和功能层，并且像素电极层用作OLED器件的阳极层; 或者，OLED器件包括阳极层和功能层，并且像素电极层用作OLED器件的阴极层。 此外，TFT有源层和像素电极层通过图案化工艺由相同的IGZO膜形成。