公开(公告)号：US20210226064A1

公开(公告)日：2021-07-22

申请号：US16959179

申请日：2019-11-19

Applicant: BOE Technology Group Co., Ltd.

Inventor： Xiaochen Ma ,  Guangcai Yuan ,  Ce Ning ,  Xin Gu ,  Hehe Hu

IPC: H01L29/786 ,  H01L29/66 ,  H01L29/417

Abstract: Provided are a thin film transistor including: a base cushion layer having a recessed portion, base insulating layer, source-drain layer and active layer. The base insulating layer is located on a side of the base cushion layer where the recessed portion is located, and has a first and second partition walls that are spaced apart, and an orthographic projection region of a gap region between the first and second partition walls onto the base cushion layer is located at a region where the recessed portion is located; and both orthographic projection regions of the first and second partition walls onto the base cushion layer partially overlap with the recessed portion region; and both the source-drain layer and the active layer are located on the side of the base insulating layer away from the base cushion layer.

公开(公告)号：US20200091263A1

公开(公告)日：2020-03-19

申请号：US16556342

申请日：2019-08-30

Applicant: BOE Technology Group Co., Ltd.

Inventor： Ke Wang ,  Xinhong Lu ,  Hehe Hu ,  Wei Yang ,  Ce Ning

IPC: H01L27/32 ,  H01L27/12 ,  H01L29/417 ,  H01L29/423 ,  H01L29/40

Abstract: The present discloses an array substrate and a manufacturing method thereof, and a display device. The array substrate includes a first transistor and a second transistor. The first transistor includes a first active layer, a first gate, a first source and a first drain. The second transistor includes a second active layer, a second gate, a second source and a second drain. An orthographic projection of the second source on the base substrate and an orthographic projection of the second drain on the base substrate at least partially overlap. One of the second source and the second drain is in the same layer as and made from the same material as the first gate. The first source and the first drain are in the same layer as and made from the same material as the other of the second source and the second drain.

公开(公告)号：US20180166562A1

公开(公告)日：2018-06-14

申请号：US15554446

申请日：2017-01-20

Applicant: BOE Technology Group Co., Ltd.

Inventor： Ce Ning ,  Wei Yang ,  Hehe Hu

IPC: H01L29/66 ,  H01L29/786 ,  H01L21/44 ,  H01L21/4763 ,  H01L21/426 ,  H01L21/4757

CPC classification number: H01L29/66969 ,  H01L21/425 ,  H01L21/426 ,  H01L21/44 ,  H01L21/465 ,  H01L21/4757 ,  H01L21/47635 ,  H01L21/77 ,  H01L29/78606 ,  H01L29/78618 ,  H01L29/7869

Abstract: A thin film transistor, a manufacturing method for an array substrate, the array substrate, and a display device are provided. The manufacturing method for a thin film transistor includes: forming a semiconductor layer; performing a modification treatment on a surface layer of a region of the semiconductor layer, so that the region of the semiconductor layer has a portion in a first direction perpendicular to the semiconductor layer formed as an etching blocking layer, portions of the semiconductor layer on both sides of the etching blocking layer in a second direction parallel to a surface of the semiconductor layer remaining unmodified; and forming a source electrode and a drain electrode on the semiconductor layer, the source electrode and the drain electrode being formed on both sides of a center line of the region perpendicular to the second direction, and spaced from each other in the second direction.

公开(公告)号：US12230340B2

公开(公告)日：2025-02-18

申请号：US17996293

申请日：2021-11-30

Applicant: BOE Technology Group Co., Ltd.

Inventor： Yunsik Im ,  Shunhang Zhang ,  Fuqiang Li ,  Changfeng Li ,  Liwei Liu ,  Hehe Hu ,  Ce Ning ,  Hui Zhang ,  Hongrun Wang ,  Zhuo Li

IPC: G11C19/28 ,  G09G3/20 ,  G09G3/3266 ,  G09G3/36

Abstract: The present disclosure provides a shift register unit, a gate driving circuit and a display device. The shift register unit provided by the present disclosure includes: an input sub-circuit, an output sub-circuit, at least one pull-down control sub-circuit, at least one pull-down sub-circuit, at least one first noise reduction sub-circuit, and a reverse bias sub-circuit; the reverse bias sub-circuit is configured to control transistors in at least part of sub-circuits connected to a pull-up node to be in a reverse bias state through a power voltage signal in response to a potential of the pull-up node, or control the transistors in at least part of the sub-circuits connected to the pull-up node to be in the reverse bias state through a cascade signal in response to a potential of a cascade signal terminal.

公开(公告)号：US12191400B2

公开(公告)日：2025-01-07

申请号：US18322981

申请日：2023-05-24

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Lizhong Wang ,  Tianmin Zhou ,  Hehe Hu ,  Xiaochun Xu ,  Nianqi Yao ,  Dapeng Xue ,  Shuilang Dong

IPC: H01L27/12 ,  H01L29/66 ,  H01L29/786

Abstract: An oxide thin film transistor includes: a gate electrode, a metal oxide active layer and a source-drain metal layer, which are on a base substrate. The metal oxide active layer includes a first metal oxide layer and a second metal oxide layer stacked on the first metal oxide layer in a direction away from the base substrate; the first metal oxide layer is a carrier transport layer; the second metal oxide layer is a carrier isolation layer; an electron transfer rate of the carrier transport layer is greater than an electron transfer rate of the carrier isolation layer. The first metal oxide layer includes a primary surface facing toward the base substrate and a primary surface away from the base substrate; the first metal oxide layer further includes a lateral surface around the primary surfaces; the second metal oxide layer covers the lateral surface of the first metal oxide layer.

公开(公告)号：US12041825B2

公开(公告)日：2024-07-16

申请号：US17429935

申请日：2020-11-13

Applicant: BOE Technology Group Co., Ltd.

Inventor： Jiayu He ,  Ce Ning ,  Zhengliang Li ,  Hehe Hu ,  Jie Huang ,  Nianqi Yao ,  Xue Liu

IPC: H10K59/13 ,  H10K59/124 ,  H10K59/126 ,  H10K59/38 ,  H10K71/00 ,  H10K59/12

CPC classification number: H10K59/13 ,  H10K59/124 ,  H10K59/126 ,  H10K59/38 ,  H10K71/00 ,  H10K59/1201

Abstract: An organic electroluminescent display substrate is provided, which includes a base substrate, and a light-emitting unit and a light-sensing unit arranged on the base substrate, wherein the light-sensing unit is arranged on a light-emitting side of the light-emitting unit, and configured for sensing an intensity of light emitted from the light-emitting unit; a first planarization layer is arranged between the light-sensing unit and the light-emitting unit; the light-sensing unit comprises a first thin film transistor and a photosensitive sensor arranged sequentially in that order in a direction away from the base substrate, and a second planarization layer is arranged between the photosensitive sensor and the first thin film transistor. A display panel, a display device and a method for manufacturing the organic electroluminescent display substrate are further provided.

公开(公告)号：US11695079B2

公开(公告)日：2023-07-04

申请号：US17356167

申请日：2021-06-23

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Lizhong Wang ,  Tianmin Zhou ,  Hehe Hu ,  Xiaochun Xu ,  Nianqi Yao ,  Dapeng Xue ,  Shuilang Dong

IPC: H01L27/00 ,  H01L29/00 ,  H01L29/786 ,  H01L27/12 ,  H01L29/66

CPC classification number: H01L29/7869 ,  H01L27/127 ,  H01L27/1225 ,  H01L29/66969

Abstract: An oxide thin film transistor includes: a gate electrode, a metal oxide active layer and a source-drain metal layer, which are on a base substrate. The metal oxide active layer includes a first metal oxide layer and a second metal oxide layer stacked on the first metal oxide layer in a direction away from the base substrate; the first metal oxide layer is a carrier transport layer; the second metal oxide layer is a carrier isolation layer; an electron transfer rate of the carrier transport layer is greater than an electron transfer rate of the carrier isolation layer. The first metal oxide layer includes a primary surface facing toward the base substrate and a primary surface away from the base substrate; the first metal oxide layer further includes a lateral surface around the primary surfaces; the second metal oxide layer covers the lateral surface of the first metal oxide layer.

公开(公告)号：US11664460B2

公开(公告)日：2023-05-30

申请号：US16608549

申请日：2019-04-25

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Wenlin Zhang ,  Jianming Sun ,  Hehe Hu

IPC: H01L29/786 ,  H01L27/12

CPC classification number: H01L29/7869 ,  H01L27/1285 ,  H01L29/78618

Abstract: The present disclosure relates to a thin-film transistor, a method for preparing the same, and a display substrate. The method for preparing the thin-film transistor includes the steps of forming a source electrode, a drain electrode, and an active layer, in which the step of forming the source electrode, the drain electrode, and the active layer includes: forming a first thin film from a first metal oxide material in an atmosphere of a first oxygen content; and forming a second thin film from a second metal oxide material in an atmosphere of a second oxygen content, in which the first thin film is configured to form the active layer, the second thin film is configured to form a source electrode and a drain electrode, and the second oxygen content is less than the first oxygen content.

公开(公告)号：US11605739B2

公开(公告)日：2023-03-14

申请号：US16876344

申请日：2020-05-18

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Lizhong Wang ,  Tianmin Zhou ,  Hehe Hu ,  Shuilang Dong ,  Wenhua Wang ,  Nianqi Yao

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/49 ,  H01L29/66 ,  H01L21/02

Abstract: An oxide thin film transistor includes an oxide active layer, a first loose layer and a first oxygen release layer. The first loose layer is at least disposed on a first surface of the oxide active layer perpendicular to a thickness direction of the oxide active layer, and is in contact with the oxide active layer. A material of the first loose layer includes a first inorganic oxide insulating material. The first oxygen release layer is disposed on a surface of the first loose layer facing away from the oxide active layer, and is in contact with the first loose layer. A material of the first oxygen release layer is a first oxygen-containing insulating material.

公开(公告)号：US20220344480A1

公开(公告)日：2022-10-27

申请号：US17755380

申请日：2021-05-19

Applicant: BOE Technology Group Co., Ltd.

Inventor： Lizhong Wang ,  Ce Ning ,  Hehe Hu ,  Tianmin Zhou ,  Jipeng Song

IPC: H01L29/417 ,  H01L29/786

Abstract: The present disclosure provides a thin film transistor, a GOA circuit and an array substrate, the thin film transistor including a source electrode, including a source electrode wiring and a plurality of source electrode branches; a drain electrode, including a drain electrode wiring and a plurality of drain electrode branches; a gate; a semiconductor layer including a plurality of semiconductor branches; a plurality of source electrode branches. The plurality of drain electrode branches are in contact with the plurality of semiconductor branches and are divided into a plurality of cells; the source electrode wiring and the drain electrode wiring are arranged in a parallel and spaced apart, and the number m of one of the source electrode wiring and the drain electrode wiring is an integer greater than or equal to 2, and the number n of the other is an integer greater than or equal to 1.