Abstract:
An apparatus includes a plurality of circuit blocks, a plurality of scan-enabled flip-flop circuits, and a plurality of scan signature circuits. The plurality of scan-enabled flip-flop circuits may be coupled in a sequential manner across the plurality of circuit blocks, and be configured to shift a scan chain test signal from a test input interface to a test output interface. The plurality of scan signature circuits may be coupled to respective ones of a subset of the plurality of scan-enabled flip-flop circuits, and be configured to, in response to a particular test signal, concurrently load a known scan-chain pattern to the subset of the scan-enabled flip-flop circuits. The plurality of scan-enabled flip-flop circuits may be further configured to sequentially output at least a portion of the known scan-chain pattern to the test output interface.
Abstract:
A method and apparatus for storing and accessing sparse data is disclosed. A sparse array circuit may receive information indicative of a request to perform a read operation on a memory circuit that includes multiple banks. The sparse array circuit may compare an address included in the received information to multiple entries that correspond to address locations in the memory circuit that store sparse data. In response to a determination that that the address matches a particular entry, the sparse array may generate one or more control signals that may disable the read operation, and cause a data control circuit to transmits the sparse data pattern.
Abstract:
A cache memory circuit that evicts cache lines based on which cache lines are storing background data patterns is disclosed. The cache memory circuit can store multiple cache lines and, in response to receiving a request to store a new cache line, can select a particular one of previously stored cache lines. The selection may be performed based on data patterns included in the previously stored cache lines. The cache memory circuit can also perform accesses where the internal storage arrays are not activated in response to determining data in the location specified by the requested address is background data. In systems employing virtual addresses, a translation lookaside buffer can track the location of background data in the cache memory circuit.
Abstract:
A cache memory circuit that evicts cache lines based on which cache lines are storing background data patterns is disclosed. The cache memory circuit can store multiple cache lines and, in response to receiving a request to store a new cache line, can select a particular one of previously stored cache lines. The selection may be performed based on data patterns included in the previously stored cache lines. The cache memory circuit can also perform accesses where the internal storage arrays are not activated in response to determining data in the location specified by the requested address is background data. In systems employing virtual addresses, a translation lookaside buffer can track the location of background data in the cache memory circuit.
Abstract:
A cache memory circuit that evicts cache lines based on which cache lines are storing background data patterns is disclosed. The cache memory circuit can store multiple cache lines and, in response to receiving a request to store a new cache line, can select a particular one of previously stored cache lines. The selection may be performed based on data patterns included in the previously stored cache lines. The cache memory circuit can also perform accesses where the internal storage arrays are not activated in response to determining data in the location specified by the requested address is background data. In systems employing virtual addresses, a translation lookaside buffer can track the location of background data in the cache memory circuit.
Abstract:
Methods and apparatuses for performing a disturb test on a memory are disclosed. Circuitry may be configured to store test data into one or more data storage cells. A regulation circuit may adjust a level of a power supply coupled to the one or more data storage cells from a first level to a second level. Once the voltage level of the power supply has reached the second level, the circuitry may perform a read operation on the one or more data storage cells. Upon completion of the read operation, the regulation circuit may return the voltage level of the power supply to the first level, and the circuitry may perform another read operation, the results of which, the circuitry may compare to the test data.
Abstract:
Methods and apparatuses for performing a disturb test on a memory are disclosed. Circuitry may be configured to store test data into one or more data storage cells. A regulation circuit may adjust a level of a power supply coupled to the one or more data storage cells from a first level to a second level. Once the voltage level of the power supply has reached the second level, the circuitry may perform a read operation on the one or more data storage cells. Upon completion of the read operation, the regulation circuit may return the voltage level of the power supply to the first level, and the circuitry may perform another read operation, the results of which, the circuitry may compare to the test data.
Abstract:
Embodiments of a memory are disclosed that may reduce the likelihood of a miss-read while reading a weak data storage cell. The memory may include a number of data storage cells, a column multiplexer, a first sense amplifier and a second sense amplifier, and an output circuit. The gain level of the first sense amplifier may be higher than the gain level of the second sense amplifier. The output circuit may include a multiplexer and the multiplexer may be operable to controllably select one of the outputs of the first and second sense amplifiers and pass the value of the selected sense amplifier. The output circuit may include a node that couples the outputs of the first and second sense amplifiers and the outputs of the first and second sense amplifiers may be able to be set to a high impedance state.
Abstract:
This disclosure describes a time varying power supply that may include a resonator circuit comprising an inductor having first and second terminals, a first capacitor coupled to the first terminal, and a second capacitor coupled to the second terminal, where the first capacitor produces a first time varying power supply output and wherein the second capacitor produces a second time varying power supply output. The time varying power supply may further include an exciter circuit comprising a first PFET and a first NFET coupled to the first terminal and a second PFET and a second NFET coupled to the second terminal. The first and second PFETs and the first and second NFETs may be coupled to a corresponding one of four non-overlapping clock phases.
Abstract:
A method and apparatus for storing and accessing sparse data is disclosed. A sparse array circuit may receive information indicative of a request to perform a read operation on a memory circuit that includes multiple banks. The sparse array circuit may compare an address included in the received information to multiple entries that correspond to address locations in the memory circuit that store sparse data. In response to a determination that that the address matches a particular entry, the sparse array may generate one or more control signals that may disable the read operation, and cause a data control circuit to transmits the sparse data pattern.