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公开(公告)号：US11552244B2
公开(公告)日：2023-01-10
申请号：US17193966
申请日：2021-03-05
Applicant: Applied Materials, Inc.
Inventor： Lin Xue , Chi Hong Ching , Rongjun Wang , Mahendra Pakala
Abstract: Embodiments of magnetic tunnel junction (MTJ) structures discussed herein employ seed layers of one or more layer of chromium (Cr), NiCr, NiFeCr, RuCr, IrCr, or CoCr, or combinations thereof. These seed layers are used in combination with one or more pinning layers, a first pinning layer in contact with the seed layer can contain a single layer of cobalt, or can contain cobalt in combination with bilayers of cobalt and platinum (Pt), iridium (Ir), nickel (Ni), or palladium (Pd), The second pinning layer can be the same composition and configuration as the first, or can be of a different composition or configuration. The MTJ stacks discussed herein maintain desirable magnetic properties subsequent to high temperature annealing.
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公开(公告)号：US11043364B2
公开(公告)日：2021-06-22
申请号：US15614595
申请日：2017-06-05
Applicant: APPLIED MATERIALS, INC.
Inventor： Hanbing Wu , Anantha K. Subramani , Ashish Goel , Deepak Jadhav , Rongjun Wang , Chi Hong Ching
IPC: H01J37/34 , H01J37/32 , C23C14/34 , C23C16/458
Abstract: Embodiments of a process kit for use in a multi-cathode process chamber are disclosed herein. In some embodiments, a process kit includes a rotatable shield having a base, a conical portion extend downward and radially outward from the base, and a collar portion extending radially outward from a bottom of the conical portion; an inner deposition ring having a leg portion, a flat portion extending radially inward from the leg portion, a first recessed portion extending radially inward from the flat portion, and a first lip extending upward from an innermost section of the first recessed portion; and an outer deposition ring having a collar portion, an upper flat portion disposed above and extending radially inward from the collar portion, a second recessed portion extending inward from the upper flat portion, and a second lip extending upward from an innermost section of the second recessed portion.
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公开(公告)号：US11011357B2
公开(公告)日：2021-05-18
申请号：US15890694
申请日：2018-02-07
Applicant: APPLIED MATERIALS, INC.
Inventor： Hanbing Wu , Anantha K. Subramani , Ashish Goel , Xiaodong Wang , Wei W. Wang , Rongjun Wang , Chi Hong Ching
Abstract: Methods and apparatus for processing substrates with a multi-cathode chamber. The multi-cathode chamber includes a shield with a plurality of holes and a plurality of shunts. The shield is rotatable to orient the holes and shunts with a plurality of cathodes located above the shield. The shunts interact with magnets from the cathodes to prevent interference during processing. The shield can be raised and lowered to adjust gapping between a target of a cathode and a hole to provide a dark space during processing.
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公开(公告)号：US10923652B2
公开(公告)日：2021-02-16
申请号：US16448709
申请日：2019-06-21
Applicant: Applied Materials, Inc.
Inventor： Lin Xue , Chando Park , Chi Hong Ching , Jaesoo Ahn , Mahendra Pakala
IPC: H01L43/12 , H01L43/02 , G11C11/16 , C23C14/54 , H01F10/32 , H01L43/10 , H01F41/32 , C23C14/06 , H01L21/67 , H01F10/13
Abstract: Embodiments of the disclosure provide methods and apparatus for fabricating magnetic tunnel junction (MTJ) structures on a substrate for MRAM applications. In one embodiment, a magnetic tunnel junction (MTJ) device structure includes a junction structure disposed on a substrate, the junction structure comprising a first ferromagnetic layer and a second ferromagnetic layer sandwiching a tunneling barrier layer, a dielectric capping layer disposed on the junction structure, a metal capping layer disposed on the junction structure, and a top buffer layer disposed on the metal capping layer.
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15.发明申请公开(公告)号：US20150279635A1
公开(公告)日：2015-10-01
申请号：US14606367
申请日：2015-01-27
Applicant: Applied Materials, Inc.
Inventor： Anantha K. Subramani , Deepak Jadhav , Ashish Goel , Hanbing Wu , Prashanth Kothnur , Chi Hong Ching
CPC classification number: H01J37/3408 , C23C16/34 , C23C16/405 , H01J37/3417 , H01J37/3435 , H01J37/3447
Abstract: A deposition system, and a method of operation thereof, includes: a cathode; a shroud below the cathode; a rotating shield below the cathode for exposing the cathode through the shroud and through a shield hole of the rotating shield; and a rotating pedestal for producing a material to form a carrier over the rotating pedestal, wherein the material having a non-uniformity constraint of less than 1% of a thickness of the material and the cathode having an angle between the cathode and the carrier.
Abstract translation: 沉积系统及其操作方法包括：阴极; 阴极下方的护罩; 在阴极下面的旋转屏蔽件，用于使阴极暴露于护罩并通过旋转屏蔽的屏蔽孔; 以及用于产生在所述旋转底座上形成载体的材料的旋转底座，其中所述材料具有小于所述材料和所述阴极的厚度的1％的不均匀约束，所述材料和所述阴极在所述阴极和所述载体之间具有角度。
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Patent Agency Ranking
公开(公告)号：US11621393B2
公开(公告)日：2023-04-04
申请号：US17112484
申请日：2020-12-04
Applicant: Applied Materials, Inc.
Inventor： Lin Xue , Chando Park , Chi Hong Ching , Jaesoo Ahn , Mahendra Pakala
IPC: H01L43/12 , C23C14/06 , C23C14/54 , H01F10/32 , H01F41/32 , H01L43/10 , H01L43/02 , H01F10/13 , H01L21/67 , C23C14/00 , H01F41/30 , H01F10/30 , G11C11/16
Abstract: Embodiments of the disclosure provide methods and apparatus for fabricating magnetic tunnel junction (MTJ) structures on a substrate for MRAM applications. In one embodiment, a magnetic tunnel junction (MTJ) device structure includes a junction structure disposed on a substrate, the junction structure comprising a first ferromagnetic layer and a second ferromagnetic layer sandwiching a tunneling barrier layer, a dielectric capping layer disposed on the junction structure, a metal capping layer disposed on the junction structure, and a top buffer layer disposed on the metal capping layer.
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公开(公告)号：US11600476B2
公开(公告)日：2023-03-07
申请号：US17503994
申请日：2021-10-18
Applicant: Applied Materials, Inc.
Inventor： Anantha K. Subramani , Deepak Jadhav , Ashish Goel , Hanbing Wu , Prashanth Kothnur , Chi Hong Ching
Abstract: A deposition system, and a method of operation thereof, includes: a cathode; a shroud below the cathode; a rotating shield below the cathode for exposing the cathode through the shroud and through a shield hole of the rotating shield; and a rotating pedestal for producing a material to form a carrier over the rotating pedestal, wherein the material having a non-uniformity constraint of less than 1% of a thickness of the material and the cathode having an angle between the cathode and the carrier.
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公开(公告)号：US11133460B2
公开(公告)日：2021-09-28
申请号：US15438420
申请日：2017-02-21
Applicant: Applied Materials, Inc.
Inventor： Lin Xue , Jaesoo Ahn , Mahendra Pakala , Chi Hong Ching , Rongjun Wang
Abstract: Embodiments of the disclosure provide methods and apparatus for fabricating magnetic tunnel junction (MTJ) structures on a substrate in for spin-transfer-torque magnetoresistive random access memory (STT-MRAM) applications. In one example, a film stack utilized to form a magnetic tunnel junction structure on a substrate includes a pinned layer disposed on a substrate, wherein the pinned layer comprises multiple layers including at least one or more of a Co containing layer, Pt containing layer, Ta containing layer, an Ru containing layer, an optional structure decoupling layer disposed on the pinned magnetic layer, a magnetic reference layer disposed on the optional structure decoupling layer, a tunneling barrier layer disposed on the magnetic reference layer, a magnetic storage layer disposed on the tunneling barrier layer, and a capping layer disposed on the magnetic storage layer.
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公开(公告)号：US10998496B2
公开(公告)日：2021-05-04
申请号：US16859350
申请日：2020-04-27
Applicant: Applied Materials, Inc.
Inventor： Lin Xue , Chi Hong Ching , Xiaodong Wang , Mahendra Pakala , Rongjun Wang
IPC: H01L27/22 , H01L43/12 , G11C11/16 , H01L27/12 , H01L43/08 , H01L43/02 , H01L43/10 , H01L43/04 , G11C11/22 , H01L43/06 , H01L43/14 , G11C11/18
Abstract: Embodiments of the disclosure provide methods for forming MTJ structures from a film stack disposed on a substrate for MRAM applications and associated MTJ devices. The methods described herein include forming the film properties of material layers from the film stack to create a film stack with a sufficiently high perpendicular magnetic anisotropy (PMA). An iron containing oxide capping layer is utilized to generate the desirable PMA. By utilizing an iron containing oxide capping layer, thickness of the capping layer can be more finely controlled and reliance on boron at the interface of the magnetic storage layer and the capping layer is reduced.
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公开(公告)号：US10468592B1
公开(公告)日：2019-11-05
申请号：US16029844
申请日：2018-07-09
Applicant: Applied Materials, Inc.
Inventor： Lin Xue , Chi Hong Ching , Xiaodong Wang , Rongjun Wang , Mahendra Pakala
Abstract: Embodiments of the present disclosure are for systems and methods for fabrication of a magnetic tunnel junction stack. This fabrication can occur via methods including one or more of (1) heating the substrate after the deposition of a buffer layer on the substrate, prior to deposition of a seed layer; (2) cooling the substrate after the deposition of a second pinning layer, before deposition of a structure blocking layer; (3) heating the substrate during the deposition of a tunnel barrier layer and then cooling it after the deposition of the tunnel barrier layer is complete; (4) heating the substrate after the deposition of a magnetic storage layer on the tunnel barrier layer; and (5) cooling the substrate after the deposition of the magnetic storage layer before a first interlayer of the capping layer is deposited.
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